Pub Date : 1998-02-22DOI: 10.1109/HTEMDS.1998.730639
A. Lebedev, V. Chelnokov
In this work, theoretical analysis is given of SiC parameters which are important for electronic device production. Also, a comparative description of the different technological methods used for SiC growth is given. For substrate growth, the Lely method and modified Lely method are examined; for n-type epilayer growth, sublimation epitaxy (SE), container free liquid phase epitaxy (CFLPE), and chemical vapour deposition (CVD) are compared; for p-n junction production, SE, CFLPE, CVD, Al implantation (ID) and boron diffusion are compared; and for mesa structure formation, plasma-ion etching is examined.
{"title":"High power SiC-devices. New result and prospects","authors":"A. Lebedev, V. Chelnokov","doi":"10.1109/HTEMDS.1998.730639","DOIUrl":"https://doi.org/10.1109/HTEMDS.1998.730639","url":null,"abstract":"In this work, theoretical analysis is given of SiC parameters which are important for electronic device production. Also, a comparative description of the different technological methods used for SiC growth is given. For substrate growth, the Lely method and modified Lely method are examined; for n-type epilayer growth, sublimation epitaxy (SE), container free liquid phase epitaxy (CFLPE), and chemical vapour deposition (CVD) are compared; for p-n junction production, SE, CFLPE, CVD, Al implantation (ID) and boron diffusion are compared; and for mesa structure formation, plasma-ion etching is examined.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121512296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-02-22DOI: 10.1109/HTEMDS.1998.730642
M. Ostling
In Sweden, silicon carbide technology is regarded as one of the prime research areas in microelectronics. The main driving force has been the power generation and power distribution industry and the need for low power loss systems. These needs are expected in part to be covered by replacing Si with SiC devices to utilize blocking voltages of 20 kV, higher temperature operation (300-400/spl deg/C), lower device losses and higher switching frequencies. The establishment of a state-of-the-art SiC device processing facility in Kista-Stockholm, Sweden by ABB further manifests the thrust towards SiC technology. This paper presents examples of the advances in materials growth technology, characterization, device fabrication results, device modeling and new application areas such as high temperature sensors.
{"title":"Recent advances in SiC materials and device technologies in Sweden","authors":"M. Ostling","doi":"10.1109/HTEMDS.1998.730642","DOIUrl":"https://doi.org/10.1109/HTEMDS.1998.730642","url":null,"abstract":"In Sweden, silicon carbide technology is regarded as one of the prime research areas in microelectronics. The main driving force has been the power generation and power distribution industry and the need for low power loss systems. These needs are expected in part to be covered by replacing Si with SiC devices to utilize blocking voltages of 20 kV, higher temperature operation (300-400/spl deg/C), lower device losses and higher switching frequencies. The establishment of a state-of-the-art SiC device processing facility in Kista-Stockholm, Sweden by ABB further manifests the thrust towards SiC technology. This paper presents examples of the advances in materials growth technology, characterization, device fabrication results, device modeling and new application areas such as high temperature sensors.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124409698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-02-22DOI: 10.1109/HTEMDS.1998.730693
H. Fecht, C. Ettl, M. Werner
Microsystems technology allows the integration of several functions within one product. The tendency towards continous miniaturization and the corresponding increase in integration density is a further challenge to the materials in use, in particular at elevated temperatures. For high temperature applications, wide bandgap semiconductors, such as diamond, are used. Several materials related properties are discussed, in particular for the manufacture of stable contacts.
{"title":"Diamond based metal-semiconductor contacts for elevated temperatures","authors":"H. Fecht, C. Ettl, M. Werner","doi":"10.1109/HTEMDS.1998.730693","DOIUrl":"https://doi.org/10.1109/HTEMDS.1998.730693","url":null,"abstract":"Microsystems technology allows the integration of several functions within one product. The tendency towards continous miniaturization and the corresponding increase in integration density is a further challenge to the materials in use, in particular at elevated temperatures. For high temperature applications, wide bandgap semiconductors, such as diamond, are used. Several materials related properties are discussed, in particular for the manufacture of stable contacts.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115142593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-02-22DOI: 10.1109/HTEMDS.1998.730679
S. Rudaz, R. Fletcher
The past ten years have seen a virtual revolution for the optoelectronics industry dealing with LEDs. With the development of new III-V materials, such as AlGaAs, AlInGaP, and InGaN, and epitaxial structures capable of very efficient visible light generation, a vast new field of applications for LEDs has opened. The most recent development has been the introduction of bright blue and green LEDs based on InGaN. This now makes coverage of the entire color spectrum possible, from red to violet at brightness and efficiency levels exceeding conventional filament light sources. Full-color large screen video displays with excellent color rendition and brightness and even white light LEDs are being produced. Semiconductor lasers have also benefitted from progress with InGaN technology, and have been demonstrated with emission wavelengths around 400 nm. The primary importance of these devices is in the area of CD data storage, where the short wavelength increases storage density by approximately a factor of four over current systems using a red AlInGaP or infrared AlGaAs laser. Despite these advances, we have barely begun to see the possibilities for LEDs. Continuing improvements in materials and device efficiency and light extraction techniques are set to raise performance limits by at least a factor of two for InGaN and AlInGaP devices over the next few years. This presentation focuses on the advances that have been achieved with InGaN materials technology and the types of devices that have been created. Current applications and possible future use for high performance blue LEDs and lasers are also discussed.
{"title":"Advances in InGaN technology for light-emitting diodes and semiconductor lasers","authors":"S. Rudaz, R. Fletcher","doi":"10.1109/HTEMDS.1998.730679","DOIUrl":"https://doi.org/10.1109/HTEMDS.1998.730679","url":null,"abstract":"The past ten years have seen a virtual revolution for the optoelectronics industry dealing with LEDs. With the development of new III-V materials, such as AlGaAs, AlInGaP, and InGaN, and epitaxial structures capable of very efficient visible light generation, a vast new field of applications for LEDs has opened. The most recent development has been the introduction of bright blue and green LEDs based on InGaN. This now makes coverage of the entire color spectrum possible, from red to violet at brightness and efficiency levels exceeding conventional filament light sources. Full-color large screen video displays with excellent color rendition and brightness and even white light LEDs are being produced. Semiconductor lasers have also benefitted from progress with InGaN technology, and have been demonstrated with emission wavelengths around 400 nm. The primary importance of these devices is in the area of CD data storage, where the short wavelength increases storage density by approximately a factor of four over current systems using a red AlInGaP or infrared AlGaAs laser. Despite these advances, we have barely begun to see the possibilities for LEDs. Continuing improvements in materials and device efficiency and light extraction techniques are set to raise performance limits by at least a factor of two for InGaN and AlInGaP devices over the next few years. This presentation focuses on the advances that have been achieved with InGaN materials technology and the types of devices that have been created. Current applications and possible future use for high performance blue LEDs and lasers are also discussed.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128920070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-02-22DOI: 10.1109/HTEMDS.1998.730699
R. Grzybowski
Advances in SOI IC technology and development of wide band gap semiconductors such as SiC are enabling practical deployment of high temperature electronics. While ICs are key to the realization of complete high temperature electronic systems, passive components, including resistors, capacitors, magnetics and crystals, are also required. Electronic components from all of these categories exist to varying degrees for temperatures up to 500/spl deg/C. However, one of the greatest hindrances to making individual components more reliable is their packaging. Similarly, one of the greatest hindrances to integrating individual components together into a system is the understanding of harsh environment packaging techniques and materials selection. This paper addresses electronics packaging for harsh environment applications for a variety of packaging levels. We begin by looking at common failure mechanisms associated with packaging microcircuits at the IC die level as well as packaging means for individual passive components. With these failure mechanisms identified, we consider alternate materials selections and fabrication approaches that permit electronic systems to be packaged for much higher temperature operating environments than are generally possible with traditional methods. We also examine packaging options at the PWB level, including high temperature substrate materials, interconnect metallization, solders and braze materials.
{"title":"Advances in electronic packaging technologies to temperatures as high as 500/spl deg/C","authors":"R. Grzybowski","doi":"10.1109/HTEMDS.1998.730699","DOIUrl":"https://doi.org/10.1109/HTEMDS.1998.730699","url":null,"abstract":"Advances in SOI IC technology and development of wide band gap semiconductors such as SiC are enabling practical deployment of high temperature electronics. While ICs are key to the realization of complete high temperature electronic systems, passive components, including resistors, capacitors, magnetics and crystals, are also required. Electronic components from all of these categories exist to varying degrees for temperatures up to 500/spl deg/C. However, one of the greatest hindrances to making individual components more reliable is their packaging. Similarly, one of the greatest hindrances to integrating individual components together into a system is the understanding of harsh environment packaging techniques and materials selection. This paper addresses electronics packaging for harsh environment applications for a variety of packaging levels. We begin by looking at common failure mechanisms associated with packaging microcircuits at the IC die level as well as packaging means for individual passive components. With these failure mechanisms identified, we consider alternate materials selections and fabrication approaches that permit electronic systems to be packaged for much higher temperature operating environments than are generally possible with traditional methods. We also examine packaging options at the PWB level, including high temperature substrate materials, interconnect metallization, solders and braze materials.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127876799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-02-22DOI: 10.1109/HTEMDS.1998.730659
J. Wurfl
A review of technologies for GaAs high temperature electronic devices and integrated circuits is presented. Starting with the high temperature related material properties of GaAs and related heterostructures, key issues for GaAs-based high temperature devices are identified and state of the art solutions are discussed. This includes, for example, high temperature stable metallizations, technologies for substrate leakage reduction and other topics. Based on these results, the most important transistor technologies for high temperature applications (MESFETs, HFETs, HEMTs, JFETs and HBTs) are introduced and compared. The paper closes with a short review of analogue and microwave integrated circuits operating at high temperatures.
{"title":"Recent advances in GaAs devices for use at high temperatures","authors":"J. Wurfl","doi":"10.1109/HTEMDS.1998.730659","DOIUrl":"https://doi.org/10.1109/HTEMDS.1998.730659","url":null,"abstract":"A review of technologies for GaAs high temperature electronic devices and integrated circuits is presented. Starting with the high temperature related material properties of GaAs and related heterostructures, key issues for GaAs-based high temperature devices are identified and state of the art solutions are discussed. This includes, for example, high temperature stable metallizations, technologies for substrate leakage reduction and other topics. Based on these results, the most important transistor technologies for high temperature applications (MESFETs, HFETs, HEMTs, JFETs and HBTs) are introduced and compared. The paper closes with a short review of analogue and microwave integrated circuits operating at high temperatures.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124589679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-02-22DOI: 10.1109/HTEMDS.1998.730689
O. A. Golikova, M. Kazanin
The experimental results of a study of high-temperature boron-rich semiconductors, such as /spl alpha/- and /spl beta/-AlB/sub 12/, MgAlB/sub 14/, and REB/sub 66/ (where RE are rare earths, e.g. Gd), are reviewed. They were shown to represent a novel class of unique solids, combining physico-chemical properties of refractory crystals with electrical, optical and thermal properties typical for amorphous semiconductors due to specific features of their lattice. These semiconductors are believed to be promising for high-temperature device applications.
{"title":"High-temperature amorphous-like semiconductors","authors":"O. A. Golikova, M. Kazanin","doi":"10.1109/HTEMDS.1998.730689","DOIUrl":"https://doi.org/10.1109/HTEMDS.1998.730689","url":null,"abstract":"The experimental results of a study of high-temperature boron-rich semiconductors, such as /spl alpha/- and /spl beta/-AlB/sub 12/, MgAlB/sub 14/, and REB/sub 66/ (where RE are rare earths, e.g. Gd), are reviewed. They were shown to represent a novel class of unique solids, combining physico-chemical properties of refractory crystals with electrical, optical and thermal properties typical for amorphous semiconductors due to specific features of their lattice. These semiconductors are believed to be promising for high-temperature device applications.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121928949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-02-22DOI: 10.1109/HTEMDS.1998.730691
K. Gottfried, J. Kříž, J. Leibelt, C. Kaufmann, T. Gessner
Complete metallization schemes for SiC based high temperature applications were investigated with regard to their physical and chemical stability, and their electrical behaviour under the influence of a high temperature air ambient. Two metal silicides, MoSi/sub 2/ and WSi/sub 2/, were used as contacts to the 6H-SiC substrate. MoSi/sub 2/ and WSi/sub 2/ show ohmic behaviour after thermal contact formation. The specific contact resistances obtained are in the range from 10/sup -4/ to 10/sup -5/ /spl Omega/ cm/sup 2/. To keep the system design simple for these investigations, both silicides were used for on-chip interconnects. The connection to the next wiring level was realized by an 3 /spl mu/m Al cover layer and Al thick wire bonding. All systems show electrically stable behaviour during thermal storage at 400/spl deg/C for more than 1000 hours. No intermixing or degradation within the systems was found by Auger electron spectroscopy depth profile analysis and electrical measurements.
{"title":"High temperature stable metallization schemes for SiC-technology operating in air","authors":"K. Gottfried, J. Kříž, J. Leibelt, C. Kaufmann, T. Gessner","doi":"10.1109/HTEMDS.1998.730691","DOIUrl":"https://doi.org/10.1109/HTEMDS.1998.730691","url":null,"abstract":"Complete metallization schemes for SiC based high temperature applications were investigated with regard to their physical and chemical stability, and their electrical behaviour under the influence of a high temperature air ambient. Two metal silicides, MoSi/sub 2/ and WSi/sub 2/, were used as contacts to the 6H-SiC substrate. MoSi/sub 2/ and WSi/sub 2/ show ohmic behaviour after thermal contact formation. The specific contact resistances obtained are in the range from 10/sup -4/ to 10/sup -5/ /spl Omega/ cm/sup 2/. To keep the system design simple for these investigations, both silicides were used for on-chip interconnects. The connection to the next wiring level was realized by an 3 /spl mu/m Al cover layer and Al thick wire bonding. All systems show electrically stable behaviour during thermal storage at 400/spl deg/C for more than 1000 hours. No intermixing or degradation within the systems was found by Auger electron spectroscopy depth profile analysis and electrical measurements.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114513600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-02-22DOI: 10.1109/HTEMDS.1998.730658
P. Perugupalli, M. Trivedi, K. Shenai, S. K. Leong
This paper presents the high temperature behaviour of RF LDMOSFETs used in wireless applications. Self heating is an important issue in RF power transistors. Self heating could cause thermal runaway in the device if the package has not been optimally designed to dissipate the heat generated in the device. Temperature rise due to self heating is of greater concern in SOI devices because of the presence of the buried oxide layer which has lesser thermal conductivity than bulk Si. In this work, 2D finite element electrothermal simulators were used to investigate the extent of self heating. Thermal models were solved in the MIXEDMODE circuit/device simulator with the package parasitics included, to study the temperature rise in the device due to self heating.
{"title":"High temperature performance of LDMOSFETs used in RFIC applications","authors":"P. Perugupalli, M. Trivedi, K. Shenai, S. K. Leong","doi":"10.1109/HTEMDS.1998.730658","DOIUrl":"https://doi.org/10.1109/HTEMDS.1998.730658","url":null,"abstract":"This paper presents the high temperature behaviour of RF LDMOSFETs used in wireless applications. Self heating is an important issue in RF power transistors. Self heating could cause thermal runaway in the device if the package has not been optimally designed to dissipate the heat generated in the device. Temperature rise due to self heating is of greater concern in SOI devices because of the presence of the buried oxide layer which has lesser thermal conductivity than bulk Si. In this work, 2D finite element electrothermal simulators were used to investigate the extent of self heating. Thermal models were solved in the MIXEDMODE circuit/device simulator with the package parasitics included, to study the temperature rise in the device due to self heating.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131624559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-02-22DOI: 10.1109/HTEMDS.1998.730698
P. Mccluskey, R.R. Grybowski, L. Condra, D. Das, J. Fink, J. Jordan, T. Torri
Small signal commercial electronics have traditionally been designed to operate at temperatures below 125/spl deg/C. This has become a severe constraint in the development of next generation smart power electronic systems, such as remote actuators, point-of-use power supplies, and distributed high power control systems. These systems dissipate considerable heat and can operate in environments where the local ambient temperatures reach 200/spl deg/C. The ability to operate these systems without the need for active cooling is seen as a critical technology for the 21st century. The issues involved in designing silicon-based electronic systems for use at temperatures as high as 200/spl deg/C are presented in this work. The critical limiting components and packaging materials have been identified through design analyses conducted on commercially available aeronautic and automotive control modules. It is found that most standard components and packaging elements can be used up to 200/spl deg/C. However, capacitors, wire bonds, eutectic tin-lead solder joints, and FR-4 boards seriously degrade at temperatures around 200/spl deg/C. For these elements, alternative choices are recommended.
{"title":"Reliability concerns in high temperature electronic systems","authors":"P. Mccluskey, R.R. Grybowski, L. Condra, D. Das, J. Fink, J. Jordan, T. Torri","doi":"10.1109/HTEMDS.1998.730698","DOIUrl":"https://doi.org/10.1109/HTEMDS.1998.730698","url":null,"abstract":"Small signal commercial electronics have traditionally been designed to operate at temperatures below 125/spl deg/C. This has become a severe constraint in the development of next generation smart power electronic systems, such as remote actuators, point-of-use power supplies, and distributed high power control systems. These systems dissipate considerable heat and can operate in environments where the local ambient temperatures reach 200/spl deg/C. The ability to operate these systems without the need for active cooling is seen as a critical technology for the 21st century. The issues involved in designing silicon-based electronic systems for use at temperatures as high as 200/spl deg/C are presented in this work. The critical limiting components and packaging materials have been identified through design analyses conducted on commercially available aeronautic and automotive control modules. It is found that most standard components and packaging elements can be used up to 200/spl deg/C. However, capacitors, wire bonds, eutectic tin-lead solder joints, and FR-4 boards seriously degrade at temperatures around 200/spl deg/C. For these elements, alternative choices are recommended.","PeriodicalId":197749,"journal":{"name":"1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122950844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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