Pub Date : 2018-02-01DOI: 10.1080/10426507.2017.1417307
A. Stepanov, V. Nuzhdin, V. Valeev, V. Vorobev, Y. Osin
GRAPHICAL ABSTRACT ABSTRACT The new results on the optical reflection of the Si surface layers implanted by silver ions at low energies of 30 keV over a wide dose range from 5.0 × 1014 to 1.5 × 1017 ion/cm2 are presented. As the ion dose of irradiation was increased, a monotonic decrease in the reflection intensity in the ultraviolet region of the spectrum was observed, due to amorphization and macrostructuring of the Si surface. On the other hand, in the long-wavelength region, a selective reflection band appears with a maximum near 830 nm due to plasmon resonance of Ag nanoparticles synthesized during implantation.
{"title":"Ag+-ion implantation of silicon","authors":"A. Stepanov, V. Nuzhdin, V. Valeev, V. Vorobev, Y. Osin","doi":"10.1080/10426507.2017.1417307","DOIUrl":"https://doi.org/10.1080/10426507.2017.1417307","url":null,"abstract":"GRAPHICAL ABSTRACT ABSTRACT The new results on the optical reflection of the Si surface layers implanted by silver ions at low energies of 30 keV over a wide dose range from 5.0 × 1014 to 1.5 × 1017 ion/cm2 are presented. As the ion dose of irradiation was increased, a monotonic decrease in the reflection intensity in the ultraviolet region of the spectrum was observed, due to amorphization and macrostructuring of the Si surface. On the other hand, in the long-wavelength region, a selective reflection band appears with a maximum near 830 nm due to plasmon resonance of Ag nanoparticles synthesized during implantation.","PeriodicalId":20043,"journal":{"name":"Phosphorus Sulfur and Silicon and The Related Elements","volume":"41 1","pages":"110 - 114"},"PeriodicalIF":0.0,"publicationDate":"2018-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86251469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-02-01DOI: 10.1080/10426507.2017.1417305
N. Guenifi, R. Mahamdi, I. Rahmani
GRAPHICAL ABSTRACT ABSTRACT In this paper we have developed an algorithm of boron diffusion after thermal annealing in a highly doped polysilicon film. This algorithm takes into account electrically active point defects by associating some parameters such as boron solubility limit and diffusion coefficient. We have studied effect of annealing temperature in order to perform impact of this parameter on maximum depth diffusion of junction and maximum of concentration by analysis of Secondary Ion Mass Spectrometry (SIMS) profiles. In fact we have proposed numerical model based on Fick's equation, resolved by finite difference method under Matlab also we have simulated this phenomenon by Silvaco software.
{"title":"An algorithm for boron diffusion in MOS transistors using Silvaco Athena and MATLAB","authors":"N. Guenifi, R. Mahamdi, I. Rahmani","doi":"10.1080/10426507.2017.1417305","DOIUrl":"https://doi.org/10.1080/10426507.2017.1417305","url":null,"abstract":"GRAPHICAL ABSTRACT ABSTRACT In this paper we have developed an algorithm of boron diffusion after thermal annealing in a highly doped polysilicon film. This algorithm takes into account electrically active point defects by associating some parameters such as boron solubility limit and diffusion coefficient. We have studied effect of annealing temperature in order to perform impact of this parameter on maximum depth diffusion of junction and maximum of concentration by analysis of Secondary Ion Mass Spectrometry (SIMS) profiles. In fact we have proposed numerical model based on Fick's equation, resolved by finite difference method under Matlab also we have simulated this phenomenon by Silvaco software.","PeriodicalId":20043,"journal":{"name":"Phosphorus Sulfur and Silicon and The Related Elements","volume":"18 1","pages":"103 - 98"},"PeriodicalIF":0.0,"publicationDate":"2018-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91262735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-02-01DOI: 10.1080/10426507.2017.1417301
K. Varaprasad
GRAPHICAL ABSTRACT ABSTRACT Development of efficient antimicrobial metal-oxide nanoparticles (MONPs) is important to advance in the biomedical and in the industrial fields. Herein, ZnO-CuO nanoparticles with improved antibacterial were developed by simple double precipitation technique and their properties were studied. The bactericide ability of ZnO-CuO nanoparticles was investigated against Escherichia coli. The ZnO-CuO0.5 exhibited high activity against E.coli at high and low concentration levels. The MONPs were analyzed via FTIR, UV-visible/DRS, PL, SEM/EDS, TEM, XRD and TGA analysis. These results show the formation of hexagonal wurtzite-monoclinic phase morphology and the thermal characteristics of the ZnO-CuO nanoparticles emphasize the potential of these dual nanooxide materials. The intensity of the emission band of ZnO was decreased following the increase in the CuO concentrations and the order is as follows: CuO < ZnO-CuO0.5 < ZnO-CuO0.1 < ZnO. The co-assembled MONPs developed may function as potential candidates for advanced biomedical and industrial applications.
{"title":"Co-assembled ZnO (shell) – CuO (core) nano-oxide materials for microbial protection","authors":"K. Varaprasad","doi":"10.1080/10426507.2017.1417301","DOIUrl":"https://doi.org/10.1080/10426507.2017.1417301","url":null,"abstract":"GRAPHICAL ABSTRACT ABSTRACT Development of efficient antimicrobial metal-oxide nanoparticles (MONPs) is important to advance in the biomedical and in the industrial fields. Herein, ZnO-CuO nanoparticles with improved antibacterial were developed by simple double precipitation technique and their properties were studied. The bactericide ability of ZnO-CuO nanoparticles was investigated against Escherichia coli. The ZnO-CuO0.5 exhibited high activity against E.coli at high and low concentration levels. The MONPs were analyzed via FTIR, UV-visible/DRS, PL, SEM/EDS, TEM, XRD and TGA analysis. These results show the formation of hexagonal wurtzite-monoclinic phase morphology and the thermal characteristics of the ZnO-CuO nanoparticles emphasize the potential of these dual nanooxide materials. The intensity of the emission band of ZnO was decreased following the increase in the CuO concentrations and the order is as follows: CuO < ZnO-CuO0.5 < ZnO-CuO0.1 < ZnO. The co-assembled MONPs developed may function as potential candidates for advanced biomedical and industrial applications.","PeriodicalId":20043,"journal":{"name":"Phosphorus Sulfur and Silicon and The Related Elements","volume":"93 1","pages":"74 - 80"},"PeriodicalIF":0.0,"publicationDate":"2018-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83883581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-02-01DOI: 10.1080/10426507.2017.1417300
R. F. Álvarez-Estrada, I. M. de la Peña, M. L. Calvo
GRAPHICAL ABSTRACT ABSTRACT We outline some general properties of slow neutrons and their interactions in material media, their use in Boron Neutron Capture Therapy (BNCT) and their waveguiding properties. We review two important experiments on slow neutron confined propagation: in thin films and in polycapillary glass fibres. Based upon the first experiment and on previous proposals, we formulate two new proposals regarding possibilities for improved focalization (at and a bit below one micron) and propagation along longer lengths (up to about 1 m) with relatively small attenuation, and discuss possible implications for BNCT of small tumours. We emphasize the general interest and possible applications of exploring short scales by means of slow neutrons, through suitable combinations of the devices involved in those two experiments.
{"title":"Focalizing slow neutron beams at and below micron scales: Discussion on BNCT","authors":"R. F. Álvarez-Estrada, I. M. de la Peña, M. L. Calvo","doi":"10.1080/10426507.2017.1417300","DOIUrl":"https://doi.org/10.1080/10426507.2017.1417300","url":null,"abstract":"GRAPHICAL ABSTRACT ABSTRACT We outline some general properties of slow neutrons and their interactions in material media, their use in Boron Neutron Capture Therapy (BNCT) and their waveguiding properties. We review two important experiments on slow neutron confined propagation: in thin films and in polycapillary glass fibres. Based upon the first experiment and on previous proposals, we formulate two new proposals regarding possibilities for improved focalization (at and a bit below one micron) and propagation along longer lengths (up to about 1 m) with relatively small attenuation, and discuss possible implications for BNCT of small tumours. We emphasize the general interest and possible applications of exploring short scales by means of slow neutrons, through suitable combinations of the devices involved in those two experiments.","PeriodicalId":20043,"journal":{"name":"Phosphorus Sulfur and Silicon and The Related Elements","volume":"100 1","pages":"64 - 73"},"PeriodicalIF":0.0,"publicationDate":"2018-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74257526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-02-01DOI: 10.1080/10426507.2017.1417303
N. Guenifi, D. Bauza, R. Mahamdi
GRAPHICAL ABSTRACT ABSTRACT The Equilibrium Voltage Step (EVS) technique has been used for extraction of depth and energy concentration profile of traps situated in the oxide of a lightly stressed metal-oxide-semiconductor (MOS) structure. This has been achieved up to the very near Si-SiO2 interface. The results are discussed and compared with those obtained using charge pumping (CP) technique. A good agreement is achieved between the trap densities extracted using the two methods even though differences in the shape of the profiles can be observed. The results also very well agree with those published previously using current deep level transient spectroscopy (C-DLTS).
{"title":"Characterizing slow state near Si-SiO2 in MOS structure","authors":"N. Guenifi, D. Bauza, R. Mahamdi","doi":"10.1080/10426507.2017.1417303","DOIUrl":"https://doi.org/10.1080/10426507.2017.1417303","url":null,"abstract":"GRAPHICAL ABSTRACT ABSTRACT The Equilibrium Voltage Step (EVS) technique has been used for extraction of depth and energy concentration profile of traps situated in the oxide of a lightly stressed metal-oxide-semiconductor (MOS) structure. This has been achieved up to the very near Si-SiO2 interface. The results are discussed and compared with those obtained using charge pumping (CP) technique. A good agreement is achieved between the trap densities extracted using the two methods even though differences in the shape of the profiles can be observed. The results also very well agree with those published previously using current deep level transient spectroscopy (C-DLTS).","PeriodicalId":20043,"journal":{"name":"Phosphorus Sulfur and Silicon and The Related Elements","volume":"25 1","pages":"88 - 91"},"PeriodicalIF":0.0,"publicationDate":"2018-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74010692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-02-01DOI: 10.1080/10426507.2017.1417304
N. Guenifi, R. Mahamdi, I. Rahmani
GRAPHICAL ABSTRACT ABSTRACT The article introduces the benefits and application features of Silvaco Technology Computer Aided Design ‘TCAD’ tool to predict the performance of electrical components and their reliability. In this work, in order to improve the electrical parameters of MOS transistor such as, threshold voltage and flat band voltage, we have simulated Phosphorus and Arsenic diffusion profiles in three dimensions before and after thermal annealing in a highly doped polysilicon film using the simulator Silvaco TCAD based on Pearson type IV models. The model takes into account the distribution of vacancy mechanisms and effects related to high concentrations, such as the formation of clusters to study solid solubility limit. The results have been analyzed and discussed in order to extract depth of doping (Phosphorus and Arsenic) and they have been able to optimize the silicon oxide thickness, to reduce the penetration of doping. Based on earlier studies a study of the effect of solubility on these profiles was performed.
{"title":"Boron phosphorus and arsenic diffusion in MOS transistors: Simulation and analysis in 2D and 3D","authors":"N. Guenifi, R. Mahamdi, I. Rahmani","doi":"10.1080/10426507.2017.1417304","DOIUrl":"https://doi.org/10.1080/10426507.2017.1417304","url":null,"abstract":"GRAPHICAL ABSTRACT ABSTRACT The article introduces the benefits and application features of Silvaco Technology Computer Aided Design ‘TCAD’ tool to predict the performance of electrical components and their reliability. In this work, in order to improve the electrical parameters of MOS transistor such as, threshold voltage and flat band voltage, we have simulated Phosphorus and Arsenic diffusion profiles in three dimensions before and after thermal annealing in a highly doped polysilicon film using the simulator Silvaco TCAD based on Pearson type IV models. The model takes into account the distribution of vacancy mechanisms and effects related to high concentrations, such as the formation of clusters to study solid solubility limit. The results have been analyzed and discussed in order to extract depth of doping (Phosphorus and Arsenic) and they have been able to optimize the silicon oxide thickness, to reduce the penetration of doping. Based on earlier studies a study of the effect of solubility on these profiles was performed.","PeriodicalId":20043,"journal":{"name":"Phosphorus Sulfur and Silicon and The Related Elements","volume":"71 1","pages":"92 - 97"},"PeriodicalIF":0.0,"publicationDate":"2018-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83941461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-02-01DOI: 10.1080/10426507.2018.1430435
M. Rudd
{"title":"Foreword for International Conference on Phosphorus, Boron and Silicon 2017","authors":"M. Rudd","doi":"10.1080/10426507.2018.1430435","DOIUrl":"https://doi.org/10.1080/10426507.2018.1430435","url":null,"abstract":"","PeriodicalId":20043,"journal":{"name":"Phosphorus Sulfur and Silicon and The Related Elements","volume":"1 1","pages":"63 - 63"},"PeriodicalIF":0.0,"publicationDate":"2018-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90050769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-01-15DOI: 10.1080/10426507.2017.1417302
K. Swamy, M. Pavan, M. Anitha, G. Gangadhararao
GRAPHICAL ABSTRACT ABSTRACT In this paper, we describe convenient methods for functionally active phenol addition reaction of allenylphosphonates/allenyl phosphine oxides. These reactions lead to either vinyl or allylphosphonates. In the reaction α-aryl allenylphosphonates with 2-iodophenol in the presence of Pd nanoparticles [Pd-PVP] isomeric vinylphosphonates are preferentially obtained. A novel cyclization reaction of 2-iodo-t-butylbenzaldimine with and allenylphosphine oxide that leads to an isoquinoline is also discovered; the product is characterized by single crystal X-ray structure determination.
{"title":"New addition and cyclization reactions involving phosphorus based allenes","authors":"K. Swamy, M. Pavan, M. Anitha, G. Gangadhararao","doi":"10.1080/10426507.2017.1417302","DOIUrl":"https://doi.org/10.1080/10426507.2017.1417302","url":null,"abstract":"GRAPHICAL ABSTRACT ABSTRACT In this paper, we describe convenient methods for functionally active phenol addition reaction of allenylphosphonates/allenyl phosphine oxides. These reactions lead to either vinyl or allylphosphonates. In the reaction α-aryl allenylphosphonates with 2-iodophenol in the presence of Pd nanoparticles [Pd-PVP] isomeric vinylphosphonates are preferentially obtained. A novel cyclization reaction of 2-iodo-t-butylbenzaldimine with and allenylphosphine oxide that leads to an isoquinoline is also discovered; the product is characterized by single crystal X-ray structure determination.","PeriodicalId":20043,"journal":{"name":"Phosphorus Sulfur and Silicon and The Related Elements","volume":"94 1","pages":"81 - 87"},"PeriodicalIF":0.0,"publicationDate":"2018-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85288651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-01-15DOI: 10.1080/10426507.2017.1417308
M. Isa, N. Ahmad
GRAPHICAL ABSTRACT ABSTRACT Thermal conductivity was measured using carboxyl methylcellulose (CMC) doped with ammonium chloride (AC) with varied amounts (0 – 12 wt. %) of propylene carbonate (PC) solid bio-polymer electrolytes (SBPs) via solution casting technique. In SBPs system, the frequency dependence of ionic conductivity, ϵr, and Mi were measured by using an electrical impedance spectroscopy method in the temperature range of 303 – 328 K. The highest ionic conductivity on the SBPs system is 1.01 × 10−2 S cm−1 for a sample containing 8 wt. % of PC. The system was found to obey the Arrhenius rule, where R2 ≈ 1. The dielectric studies show non-Debye behaviour for CMC-AC-PC SBPs. It is convenient to trust that the PC is one of the most promising plasticizers to enhance ionic conductivity and performance for SBP system.
{"title":"Carboxymethyl cellulose – ammonium chloride on electrical of plasticized propylene carbonate solid bio-polymer electrolytes (SBPs) using experimental and computational studies","authors":"M. Isa, N. Ahmad","doi":"10.1080/10426507.2017.1417308","DOIUrl":"https://doi.org/10.1080/10426507.2017.1417308","url":null,"abstract":"GRAPHICAL ABSTRACT ABSTRACT Thermal conductivity was measured using carboxyl methylcellulose (CMC) doped with ammonium chloride (AC) with varied amounts (0 – 12 wt. %) of propylene carbonate (PC) solid bio-polymer electrolytes (SBPs) via solution casting technique. In SBPs system, the frequency dependence of ionic conductivity, ϵr, and Mi were measured by using an electrical impedance spectroscopy method in the temperature range of 303 – 328 K. The highest ionic conductivity on the SBPs system is 1.01 × 10−2 S cm−1 for a sample containing 8 wt. % of PC. The system was found to obey the Arrhenius rule, where R2 ≈ 1. The dielectric studies show non-Debye behaviour for CMC-AC-PC SBPs. It is convenient to trust that the PC is one of the most promising plasticizers to enhance ionic conductivity and performance for SBP system.","PeriodicalId":20043,"journal":{"name":"Phosphorus Sulfur and Silicon and The Related Elements","volume":"16 1","pages":"115 - 119"},"PeriodicalIF":0.0,"publicationDate":"2018-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74433764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-01-04DOI: 10.1080/10426507.2017.1417306
I. Sivaev, Sergey A. Anufriev, K. Suponitsky, I. Godovikov, V. Bregadze
GRAPHICAL ABSTRACT ABSTRACT The formation of new types of intramolecular B-H⋅⋅⋅X hydride-halogen and B-H⋅⋅⋅π(C≡C) hydrogen bonds in nido-carborane derivatives 9-XCH2S(Me)S-7,8-C2B9H11 and 10-RC≡CCH2S(Me)S-7,8-C2B9H11 as well as the role of intramolecular hydrogen bonding between the dicarbollide ligands in cobalt bis(dicarbollide) complexes [3,3′-M(1,2-C2B9H11)2]− in stabilization of their different rotational isomers (rotamers) were described based on NMR spectroscopy and single-crystal X-ray studies.
摘要基于核磁共振波谱和单晶X射线，描述了羰基碳硼烷衍生物9-XCH2S(Me) s -7,8- c2b9h11和10-RC≡CCH2S(Me) s -7,8- c2b9h11中新型分子内B-H⋅⋅X氢化物卤素和B-H⋅⋅⋅π(C≡C)氢键的形成，以及钴二(二)羰基配合物[3,3′-M(1,2- c2b9h11)2] -中二羰基配体之间的分子内氢键在不同旋转异构体(旋转体)稳定中的作用研究。
{"title":"Intramolecular non-covalent interactions in nido-carboranes and metallacomplexes","authors":"I. Sivaev, Sergey A. Anufriev, K. Suponitsky, I. Godovikov, V. Bregadze","doi":"10.1080/10426507.2017.1417306","DOIUrl":"https://doi.org/10.1080/10426507.2017.1417306","url":null,"abstract":"GRAPHICAL ABSTRACT ABSTRACT The formation of new types of intramolecular B-H⋅⋅⋅X hydride-halogen and B-H⋅⋅⋅π(C≡C) hydrogen bonds in nido-carborane derivatives 9-XCH2S(Me)S-7,8-C2B9H11 and 10-RC≡CCH2S(Me)S-7,8-C2B9H11 as well as the role of intramolecular hydrogen bonding between the dicarbollide ligands in cobalt bis(dicarbollide) complexes [3,3′-M(1,2-C2B9H11)2]− in stabilization of their different rotational isomers (rotamers) were described based on NMR spectroscopy and single-crystal X-ray studies.","PeriodicalId":20043,"journal":{"name":"Phosphorus Sulfur and Silicon and The Related Elements","volume":"45 1","pages":"104 - 109"},"PeriodicalIF":0.0,"publicationDate":"2018-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86888732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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