In recent decades, wide bandgap semiconductors have attracted considerable attention due to their unique electrical properties. This study focuses on two such materials, SiC and Ga2S3, and employs the generalized lattice matching (GLM) approach to construct two van der Waals heterostructures. Computational results indicate that both heterojunctions exhibit type II band alignment with different band gaps, 1.55 (2.13) eV for M1 and 0.55 (0.93) eV for M2 with PBE (HSE06) methods. The electronic properties of the heterojunctions, including bandgap magnitude (Eg), direct/indirect nature, and band alignment type (type II or type I), can be efficiently modulated through applied electric fields and vertical strain, enabling dynamic control over their functional behavior. Additionally, the heterojunction exhibits a high optical absorption coefficient exceeding 105 and achieves a photoconversion efficiency of 21.11 %, while also satisfying the thermodynamic requirements for photocatalytic water splitting at pH = 0. These outstanding attributes underscore its strong potential for applications in photocatalytic water splitting, energy conversion, and storage, positioning it as a promising candidate material for high-performance optoelectronic devices and efficient photocatalysts.
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