Pub Date : 2024-07-23DOI: 10.1103/physrevmaterials.8.075606
Pierre Kawak, Christopher Akiki, Douglas R. Tree
While the process by which a polymer crystal nucleates from the melt has been extensively studied via molecular simulation, differences in polymer models and simulated crystallization conditions have led to seemingly contradictory results. We make steps to resolve this controversy by computing low-temperature phase diagrams of oligomer melts using Wang-Landau Monte Carlo simulations. Two qualitatively different crystallization mechanisms are possible depending on the local bending stiffness potential. Polymers with a discrete bending potential crystallize via a single-step mechanism, whereas polymers with a continuous bending potential can crystallize via a two-step mechanism that includes an intermediate nematic phase. Other model differences can be quantitatively accounted for using an effective volume fraction and a temperature scaled by the bending stiffness. These results suggest that at least two universality classes of nucleation exist for melts and that local chain stiffness is a key determining factor in the mechanism of nucleation.
{"title":"Effect of local chain stiffness on oligomer crystallization from a melt","authors":"Pierre Kawak, Christopher Akiki, Douglas R. Tree","doi":"10.1103/physrevmaterials.8.075606","DOIUrl":"https://doi.org/10.1103/physrevmaterials.8.075606","url":null,"abstract":"While the process by which a polymer crystal nucleates from the melt has been extensively studied via molecular simulation, differences in polymer models and simulated crystallization conditions have led to seemingly contradictory results. We make steps to resolve this controversy by computing low-temperature phase diagrams of oligomer melts using Wang-Landau Monte Carlo simulations. Two qualitatively different crystallization mechanisms are possible depending on the local bending stiffness potential. Polymers with a discrete bending potential crystallize via a single-step mechanism, whereas polymers with a continuous bending potential can crystallize via a two-step mechanism that includes an intermediate nematic phase. Other model differences can be quantitatively accounted for using an effective volume fraction and a temperature scaled by the bending stiffness. These results suggest that at least two universality classes of nucleation exist for melts and that local chain stiffness is a key determining factor in the mechanism of nucleation.","PeriodicalId":20545,"journal":{"name":"Physical Review Materials","volume":"99 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141754128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-23DOI: 10.1103/physrevmaterials.8.074409
A. R. Will-Cole, Valeria Lauter, Alexander Grutter, Carsten Dubs, David A. Lidsky, Morris Lindner, Timmy Reimann, Nirjhar Bhattacharjee, Tzu-Ming Lu, Peter Sharma, Nichole R. Valdez, Charles J. Pearce, Todd C. Monson, Matthew Matzelle, Arun Bansil, Don Heiman, Nian X. Sun
Topological insulator–magnetic insulator (TI–MI) heterostructures hold significant promise in the field of spintronics, offering the potential for manipulating magnetization through topological surface state–enabled spin-orbit torque. However, many TI–MI interfaces are plagued by issues such as contamination within the magnetic insulator layer and the presence of a low-density transitional region of the topological insulator. These interfacial challenges often obscure the intrinsic behavior of the TI–MI system. In this study, we addressed these challenges by depositing sputtered on liquid phase epitaxy grown . The liquid phase epitaxy grown has been previously shown to have exceptional interface quality, without an extended transient layer derived from interdiffusion processes of the substrate or impurity ions, thereby eliminating rare-earth impurity-related losses in the MI at low temperatures. At the TI–MI interface, high-resolution depth-sensitive polarized neutron reflectometry confirmed the absence of a low-density transitional growth region of the TI. By overcoming these undesirable interfacial effects, we isolate and probe the intrinsic low-temperature magnetization dynamics and transport properties of the TI–MI interface. Our findings revealed strong spin pumping at low temperatures, accompanied by an additional in-plane anisotropy. The enhanced spin pumping at low temperatures is correlated with the observed suppression of bulk conduction and the weak antilocalization in the TI film, highlighting the interplay between the transport and spin pumping behavior in the TI–MI system.
拓扑绝缘体-磁性绝缘体（TI-MI）异质结构在自旋电子学领域大有可为，它为通过拓扑表面态支持的自旋轨道力矩操纵磁化提供了潜力。然而，许多 TI-MI 界面都存在磁绝缘体层污染和拓扑绝缘体低密度过渡区等问题。这些界面难题往往会掩盖 TI-MI 系统的内在行为。在本研究中，我们通过在液相外延生长的 Y3Fe5O12/Gd3Ga5O12 上沉积溅射 Bi2Te3 来解决这些难题。液相外延生长的 Y3Fe5O12 此前已被证明具有优异的界面质量，没有因衬底或杂质离子的相互扩散过程而产生的扩展瞬态层，从而消除了低温下 MI 中与稀土杂质相关的损耗。在 TI-MI 界面上，高分辨率深度敏感偏振中子反射仪证实 TI 不存在低密度过渡生长区。通过克服这些不良的界面效应，我们分离并探测了 TI-MI 界面的内在低温磁化动力学和传输特性。我们的研究结果表明，低温下的自旋泵很强，并伴有额外的面内各向异性。低温下增强的自旋泵与在 TI 薄膜中观察到的体传导抑制和微弱的反聚焦相关，突出了 TI-MI 系统中传输和自旋泵行为之间的相互作用。
{"title":"Probing intrinsic magnetization dynamics of the Y3Fe5O12/Bi2Te3 interface at low temperature","authors":"A. R. Will-Cole, Valeria Lauter, Alexander Grutter, Carsten Dubs, David A. Lidsky, Morris Lindner, Timmy Reimann, Nirjhar Bhattacharjee, Tzu-Ming Lu, Peter Sharma, Nichole R. Valdez, Charles J. Pearce, Todd C. Monson, Matthew Matzelle, Arun Bansil, Don Heiman, Nian X. Sun","doi":"10.1103/physrevmaterials.8.074409","DOIUrl":"https://doi.org/10.1103/physrevmaterials.8.074409","url":null,"abstract":"Topological insulator–magnetic insulator (TI–MI) heterostructures hold significant promise in the field of spintronics, offering the potential for manipulating magnetization through topological surface state–enabled spin-orbit torque. However, many TI–MI interfaces are plagued by issues such as contamination within the magnetic insulator layer and the presence of a low-density transitional region of the topological insulator. These interfacial challenges often obscure the intrinsic behavior of the TI–MI system. In this study, we addressed these challenges by depositing sputtered <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><msub><mi>Bi</mi><mn>2</mn></msub><msub><mi>Te</mi><mn>3</mn></msub></mrow></math> on liquid phase epitaxy grown <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><msub><mi mathvariant=\"normal\">Y</mi><mn>3</mn></msub><msub><mi>Fe</mi><mn>5</mn></msub><msub><mi mathvariant=\"normal\">O</mi><mn>12</mn></msub><mo>/</mo><msub><mi>Gd</mi><mn>3</mn></msub><msub><mi>Ga</mi><mn>5</mn></msub><msub><mi mathvariant=\"normal\">O</mi><mn>12</mn></msub></mrow></math>. The liquid phase epitaxy grown <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><msub><mi mathvariant=\"normal\">Y</mi><mn>3</mn></msub><msub><mi>Fe</mi><mn>5</mn></msub><msub><mi mathvariant=\"normal\">O</mi><mn>12</mn></msub></mrow></math> has been previously shown to have exceptional interface quality, without an extended transient layer derived from interdiffusion processes of the substrate or impurity ions, thereby eliminating rare-earth impurity-related losses in the MI at low temperatures. At the TI–MI interface, high-resolution depth-sensitive polarized neutron reflectometry confirmed the absence of a low-density transitional growth region of the TI. By overcoming these undesirable interfacial effects, we isolate and probe the intrinsic low-temperature magnetization dynamics and transport properties of the TI–MI interface. Our findings revealed strong spin pumping at low temperatures, accompanied by an additional in-plane anisotropy. The enhanced spin pumping at low temperatures is correlated with the observed suppression of bulk conduction and the weak antilocalization in the TI film, highlighting the interplay between the transport and spin pumping behavior in the TI–MI system.","PeriodicalId":20545,"journal":{"name":"Physical Review Materials","volume":"43 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141754124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-23DOI: 10.1103/physrevmaterials.8.075403
Susumu Minami, Sota Hogaki, Takahiro Shimada
Giant magnetic transverse thermoelectric effect, anomalous Nernst effect (ANE), was theoretically and experimentally observed in -transition metal compounds. The intrinsic components of ANE can be described from the electronic structure based on the Berry phase concept. The topological electronic structure, such as the Weyl node and nodal lines, induces large Berry curvature, one origin of giant ANE. We investigated transverse thermoelectric properties on ferromagnetic -type Heusler compounds based on first-principles calculations. We found large transverse thermoelectric conductivity is realized with hole carrier doping at room temperature. We also clarified that the nodal line and its stationary point enhance transverse thermoelectric conductivity. These results give us a clue to design high-performance ANE-based magnetic thermoelectric materials.
{"title":"Nodal line induced large transverse thermoelectric response in the D03-type Heusler compound Fe3Si","authors":"Susumu Minami, Sota Hogaki, Takahiro Shimada","doi":"10.1103/physrevmaterials.8.075403","DOIUrl":"https://doi.org/10.1103/physrevmaterials.8.075403","url":null,"abstract":"Giant magnetic transverse thermoelectric effect, anomalous Nernst effect (ANE), was theoretically and experimentally observed in <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mn>3</mn><mi>d</mi></mrow></math>-transition metal compounds. The intrinsic components of ANE can be described from the electronic structure based on the Berry phase concept. The topological electronic structure, such as the Weyl node and nodal lines, induces large Berry curvature, one origin of giant ANE. We investigated transverse thermoelectric properties on ferromagnetic <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mi mathvariant=\"normal\">D</mi><msub><mn>0</mn><mn>3</mn></msub></mrow></math>-type Heusler compounds <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><msub><mi>Fe</mi><mn>3</mn></msub><mi>Si</mi></mrow></math> based on first-principles calculations. We found large transverse thermoelectric conductivity <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><msub><mi>α</mi><mrow><mi>x</mi><mi>y</mi></mrow></msub><mo>∼</mo><mn>5</mn><mspace width=\"4pt\"></mspace><msup><mrow><mi>AK</mi></mrow><mrow><mo>−</mo><mn>1</mn></mrow></msup><msup><mrow><mi mathvariant=\"normal\">m</mi></mrow><mrow><mo>−</mo><mn>1</mn></mrow></msup></mrow></math> is realized with hole carrier doping at room temperature. We also clarified that the nodal line and its stationary point enhance transverse thermoelectric conductivity. These results give us a clue to design high-performance ANE-based magnetic thermoelectric materials.","PeriodicalId":20545,"journal":{"name":"Physical Review Materials","volume":"43 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141754096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-23DOI: 10.1103/physrevmaterials.8.074007
Igor Rozhansky, Vladimir Fal'ko
In this study, we present an effective tight-binding model for an accurate description of the lowest energy quadruplet of a conduction band in a ferromagnetic monolayer, tuned to the complementary ab initio density functional theory simulations. This model, based on a minimum number of chromium orbitals, captures a distinctively flat dispersion in those bands but requires taking into account hoppings beyond nearest neighbors, revealing ligand-mediated electron pathways connecting remote chromium sites. Doping of states in the lowest conduction band of requires charge transfer, which, according to recent studies [Tenasini et al., Nano Lett.22, 6760 (2022); Tseng et al., Nano Lett.22, 8495 (2022); Cardoso et al., Phys. Rev. B108, 184423 (2023)], can occur in heterostructures. Here, we use the detailed description of the lowest conduction band in to show that and are type-II heterostructures where light holes in graphene would coexist with heavy electrons in the magnetic layer, where the latter can be characterized by Wigner-Seitz radius (as estimated for hBN-encapsulated structures).
在这项研究中，我们提出了一种有效的紧密结合模型，用于准确描述铁磁性 CrX3 单层中导带的最低能量四元组，并根据互补的 ab initio 密度泛函理论模拟进行了调整。该模型以最低数量的铬轨道为基础，捕捉到了这些带中明显平坦的色散，但需要考虑近邻之外的跳变，揭示了配体介导的连接偏远铬位点的电子路径。CrX3 最低导带中的掺杂态需要电荷转移，根据最近的研究[Tenasini 等人，Nano Lett.在这里，我们利用对 CrI3 最低导带的详细描述来说明 G/CrI3/G 和 G/CrI3 是 II 型异质结构，其中石墨烯中的轻空穴将与磁层中的重电子共存，后者可以用 Wigner-Seitz 半径 rs∼25-35 来描述（根据对 hBN 封装结构的估计）。
{"title":"Possible Wigner states in CrI3 heterostructures with graphene: A tight-binding model perspective","authors":"Igor Rozhansky, Vladimir Fal'ko","doi":"10.1103/physrevmaterials.8.074007","DOIUrl":"https://doi.org/10.1103/physrevmaterials.8.074007","url":null,"abstract":"In this study, we present an effective tight-binding model for an accurate description of the lowest energy quadruplet of a conduction band in a ferromagnetic <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mi>Cr</mi><msub><mi>X</mi><mn>3</mn></msub></mrow></math> monolayer, tuned to the complementary <i>ab initio</i> density functional theory simulations. This model, based on a minimum number of chromium orbitals, captures a distinctively flat dispersion in those bands but requires taking into account hoppings beyond nearest neighbors, revealing ligand-mediated electron pathways connecting remote chromium sites. Doping of states in the lowest conduction band of <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mi>Cr</mi><msub><mi>X</mi><mn>3</mn></msub></mrow></math> requires charge transfer, which, according to recent studies [Tenasini <i>et al.</i>, <span>Nano Lett.</span> <b>22</b>, 6760 (2022); Tseng <i>et al.</i>, <span>Nano Lett.</span> <b>22</b>, 8495 (2022); Cardoso <i>et al.</i>, <span>Phys. Rev. B</span> <b>108</b>, 184423 (2023)], can occur in <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mrow><mi>graphene</mi><mo>(</mo><mi mathvariant=\"normal\">G</mi><mo>)</mo></mrow><mo>/</mo><mi>Cr</mi><msub><mi>X</mi><mn>3</mn></msub></mrow></math> heterostructures. Here, we use the detailed description of the lowest conduction band in <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><msub><mi>CrI</mi><mn>3</mn></msub></math> to show that <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mi mathvariant=\"normal\">G</mi><mo>/</mo><msub><mi>CrI</mi><mn>3</mn></msub><mo>/</mo><mi mathvariant=\"normal\">G</mi></mrow></math> and <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mi mathvariant=\"normal\">G</mi><mo>/</mo><msub><mi>CrI</mi><mn>3</mn></msub></mrow></math> are type-II heterostructures where light holes in graphene would coexist with heavy electrons in the magnetic layer, where the latter can be characterized by Wigner-Seitz radius <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><msub><mi>r</mi><mi>s</mi></msub><mo>∼</mo><mn>25</mn><mo>−</mo><mn>35</mn></mrow></math> (as estimated for hBN-encapsulated structures).","PeriodicalId":20545,"journal":{"name":"Physical Review Materials","volume":"20 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141754122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The spin- ferromagnetic XXZ chain is a prototypical many-body quantum model, exactly solvable via the integrable Bethe ansatz method, hosting a Tomonaga-Luttinger spin liquid. However, its clear experimental realizations remain absent. Here, we present a thorough investigation of the magnetism of the structurally disorder-free compound . By conducting magnetization and electron-spin-resonance measurements on the single-crystal sample, we establish that the title compound approximates the spin- ferromagnetic XXZ chain model with a nearest-neighbor exchange strength of and an easy-plane anisotropy of . The specific heat demonstrates a distinctive power-law behavior at low magnetic fields (with energy scales ) and low temperatures . This behavior is consistent with the expectations of the ideal spin- ferromagnetic XXZ chain model, thereby supporting the formation of a gapless Tomonaga-Luttinger spin liquid in .
{"title":"Proximate Tomonaga-Luttinger liquid in a spin-1/2 ferromagnetic XXZ chain compound","authors":"Boqiang Li, Xun Chen, Yuqian Zhao, Zhaohua Ma, Zongtang Wan, Yuesheng Li","doi":"10.1103/physrevmaterials.8.074410","DOIUrl":"https://doi.org/10.1103/physrevmaterials.8.074410","url":null,"abstract":"The spin-<math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mn>1</mn><mo>/</mo><mn>2</mn></mrow></math> ferromagnetic XXZ chain is a prototypical many-body quantum model, exactly solvable via the integrable Bethe ansatz method, hosting a Tomonaga-Luttinger spin liquid. However, its clear experimental realizations remain absent. Here, we present a thorough investigation of the magnetism of the structurally disorder-free compound <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mi>LuCu</mi><msub><mrow><mo>(</mo><mi>OH</mi><mo>)</mo></mrow><mn>3</mn></msub><msub><mi>SO</mi><mn>4</mn></msub></mrow></math>. By conducting magnetization and electron-spin-resonance measurements on the single-crystal sample, we establish that the title compound approximates the spin-<math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mn>1</mn><mo>/</mo><mn>2</mn></mrow></math> ferromagnetic XXZ chain model with a nearest-neighbor exchange strength of <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><msub><mi>J</mi><mn>1</mn></msub><mo>∼</mo><mn>65</mn><mspace width=\"0.16em\"></mspace><mi mathvariant=\"normal\">K</mi></mrow></math> and an easy-plane anisotropy of <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mo>∼</mo><mn>0.994</mn></mrow></math>. The specific heat demonstrates a distinctive power-law behavior at low magnetic fields (with energy scales <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mo>≤</mo><mn>0.02</mn><msub><mi>J</mi><mn>1</mn></msub></mrow></math>) and low temperatures <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mo>(</mo><mi>T</mi><mo>≤</mo><mn>0.03</mn><msub><mi>J</mi><mn>1</mn></msub><mo>)</mo></mrow></math>. This behavior is consistent with the expectations of the ideal spin-<math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mn>1</mn><mo>/</mo><mn>2</mn></mrow></math> ferromagnetic XXZ chain model, thereby supporting the formation of a gapless Tomonaga-Luttinger spin liquid in <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mi>LuCu</mi><msub><mrow><mo>(</mo><mi>OH</mi><mo>)</mo></mrow><mn>3</mn></msub><msub><mi>SO</mi><mn>4</mn></msub></mrow></math>.","PeriodicalId":20545,"journal":{"name":"Physical Review Materials","volume":"65 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141754127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-22DOI: 10.1103/physrevmaterials.8.074804
F. Lyzwa, A. Chan, K. Fürsich, B. Keimer, C. Faugeras, Yu. G. Pashkevich, C. Bernhard, M. Minola, B. P. P. Mallett
We report a comprehensive set of polarized Raman spectra on thin-film multilayers of the high- superconductor and electrically insulating manganites ( rare-earth partially substituted with group-II elements) hosting magnetic, charge and orbital order (COO). Such multilayers have been shown to exhibit a unique insulating-to-superconducting transition that is induced by magnetic field, electric field, or by tailoring the chemical composition of the site of the manganite. The Raman spectra show significant Jahn-Teller distortions of the manganite structure, which correlate with COO, approximately 90 K above the magnetic ordering temperature of 140 K. Based on the Raman data and earlier electrical transport studies of single-layer manganite films, we argue that the manganite layers in our heterostructures remain electrically insulating across the range of investigated temperatures, dopings, and magnetic fields. The Raman spectra show a pronounced redshift and broadening of lattice vibrations around 200 in the multilayers compared to those of manganite films, which may indicate hybridization with phonons. We also observe additional excitations at 690 and 830 that are absent in the single films or bulk responses, which we discuss to originate from the cuprate/manganite interface. These observations demonstrate that the phonon spectrum is significantly modified in our multilayer samples. This is expected to play an important role in the mechanism of the insulating-to-superconducting transition found in these cuprate-manganite multilayers.
{"title":"Probing the interface and individual layers in cuprate/manganite heterostructures by Raman spectroscopy","authors":"F. Lyzwa, A. Chan, K. Fürsich, B. Keimer, C. Faugeras, Yu. G. Pashkevich, C. Bernhard, M. Minola, B. P. P. Mallett","doi":"10.1103/physrevmaterials.8.074804","DOIUrl":"https://doi.org/10.1103/physrevmaterials.8.074804","url":null,"abstract":"We report a comprehensive set of polarized Raman spectra on thin-film multilayers of the high-<math xmlns=\"http://www.w3.org/1998/Math/MathML\"><msub><mi>T</mi><mi>c</mi></msub></math> superconductor <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><msub><mrow><mi>YBa</mi></mrow><mn>2</mn></msub><msub><mrow><mi>Cu</mi></mrow><mn>3</mn></msub><msub><mrow><mi mathvariant=\"normal\">O</mi></mrow><mn>7</mn></msub></math> and electrically insulating manganites <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mi>R</mi><msub><mi>MnO</mi><mn>3</mn></msub></mrow></math> (<math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mi>R</mi><mo>=</mo></mrow></math> rare-earth partially substituted with group-II elements) hosting magnetic, charge and orbital order (COO). Such multilayers have been shown to exhibit a unique insulating-to-superconducting transition that is induced by magnetic field, electric field, or by tailoring the chemical composition of the <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mi>R</mi></math> site of the manganite. The Raman spectra show significant Jahn-Teller distortions of the manganite structure, which correlate with COO, approximately 90 K above the magnetic ordering temperature of 140 K. Based on the Raman data and earlier electrical transport studies of single-layer manganite films, we argue that the manganite layers in our heterostructures remain electrically insulating across the range of investigated temperatures, dopings, and magnetic fields. The Raman spectra show a pronounced redshift and broadening of lattice vibrations around 200 <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><msup><mrow><mi>cm</mi></mrow><mrow><mo>−</mo><mn>1</mn></mrow></msup></math> in the multilayers compared to those of manganite films, which may indicate hybridization with <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><msub><mrow><mi>YBa</mi></mrow><mn>2</mn></msub><msub><mrow><mi>Cu</mi></mrow><mn>3</mn></msub><msub><mrow><mi mathvariant=\"normal\">O</mi></mrow><mn>7</mn></msub></math> phonons. We also observe additional excitations at 690 <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><msup><mrow><mi>cm</mi></mrow><mrow><mo>−</mo><mn>1</mn></mrow></msup></math> and 830 <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><msup><mrow><mi>cm</mi></mrow><mrow><mo>−</mo><mn>1</mn></mrow></msup></math> that are absent in the single films or bulk responses, which we discuss to originate from the cuprate/manganite interface. These observations demonstrate that the phonon spectrum is significantly modified in our multilayer samples. This is expected to play an important role in the mechanism of the insulating-to-superconducting transition found in these cuprate-manganite multilayers.","PeriodicalId":20545,"journal":{"name":"Physical Review Materials","volume":"39 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141743325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-22DOI: 10.1103/physrevmaterials.8.073604
A. M. Balagurov, I. A. Bobrikov, D. Yu. Chernyshov, A. S. Sohatsky, S. V. Sumnikov, B. Yerzhanov, I. S. Golovin
Currently, the dominant model for the formation of enhanced magnetostriction of Fe-Ga alloys is based on the assumption of the presence of microscopic inclusions with a tetragonal structure in the cubic matrix of the alloy. However, no evidence for the presence of this phase in the bulk of the alloys in amounts sufficient to have a noticeable effect on the magnitude of magnetostriction has been obtained so far. To test this hypothesis, a detailed scanning of the reciprocal space of and single crystals was carried out at ESRF at high photon flux stations. In particular, it was possible to reliably record superstructure diffraction peaks, the intensity of which was at a level of from the intensity of the fundamental peaks. Nevertheless, neither the presence of superstructure diffraction peaks obviously belonging to the phase nor the tetragonal splitting of the fundamental diffraction peaks into components, which could indicate the presence of this phase in the samples, was detected. Similar results were obtained using complementary methods (electron and neutron diffraction). Based on the performed analysis of the background level in the places of the expected positions of superstructure peaks of the phase, it was found that the volume fraction of this phase in the alloy cannot exceed 0.2 %. The presence of a previously discovered phase with hexagonal or orthorhombic symmetry in a crystal with 27 at. % Ga was confirmed.
{"title":"Tetragonal phases in Fe-Ga alloys: A quantitative study","authors":"A. M. Balagurov, I. A. Bobrikov, D. Yu. Chernyshov, A. S. Sohatsky, S. V. Sumnikov, B. Yerzhanov, I. S. Golovin","doi":"10.1103/physrevmaterials.8.073604","DOIUrl":"https://doi.org/10.1103/physrevmaterials.8.073604","url":null,"abstract":"Currently, the dominant model for the formation of enhanced magnetostriction of Fe-Ga alloys is based on the assumption of the presence of microscopic inclusions with a tetragonal <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mi>L</mi><msub><mn>6</mn><mn>0</mn></msub></mrow></math> structure in the cubic matrix of the alloy. However, no evidence for the presence of this phase in the bulk of the alloys in amounts sufficient to have a noticeable effect on the magnitude of magnetostriction has been obtained so far. To test this hypothesis, a detailed scanning of the reciprocal space of <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mi mathvariant=\"normal\">F</mi><msub><mi mathvariant=\"normal\">e</mi><mn>81</mn></msub><mi mathvariant=\"normal\">G</mi><msub><mi mathvariant=\"normal\">a</mi><mn>19</mn></msub><mi mathvariant=\"normal\">T</mi><msub><mi mathvariant=\"normal\">b</mi><mrow><mn>0.1</mn></mrow></msub></mrow></math> and <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><msub><mi>Fe</mi><mn>73</mn></msub><msub><mi>Ga</mi><mn>27</mn></msub></mrow></math> single crystals was carried out at ESRF at high photon flux stations. In particular, it was possible to reliably record superstructure diffraction peaks, the intensity of which was at a level of <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mn>2</mn><mo>×</mo><msup><mrow><mn>10</mn></mrow><mrow><mo>−</mo><mn>6</mn></mrow></msup></mrow></math> from the intensity of the fundamental peaks. Nevertheless, neither the presence of superstructure diffraction peaks obviously belonging to the <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mi>L</mi><msub><mn>6</mn><mn>0</mn></msub></mrow></math> phase nor the tetragonal splitting of the fundamental diffraction peaks into components, which could indicate the presence of this phase in the samples, was detected. Similar results were obtained using complementary methods (electron and neutron diffraction). Based on the performed analysis of the background level in the places of the expected positions of superstructure peaks of the <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mi>L</mi><msub><mn>6</mn><mn>0</mn></msub></mrow></math> phase, it was found that the volume fraction of this phase in the <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mi mathvariant=\"normal\">F</mi><msub><mi mathvariant=\"normal\">e</mi><mn>81</mn></msub><mi mathvariant=\"normal\">G</mi><msub><mi mathvariant=\"normal\">a</mi><mn>19</mn></msub><mi mathvariant=\"normal\">T</mi><msub><mi mathvariant=\"normal\">b</mi><mrow><mn>0.1</mn></mrow></msub></mrow></math> alloy cannot exceed 0.2 %. The presence of a previously discovered <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mi>X</mi></math> phase with hexagonal or orthorhombic symmetry in a crystal with 27 at. % Ga was confirmed.","PeriodicalId":20545,"journal":{"name":"Physical Review Materials","volume":"7 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141743108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-22DOI: 10.1103/physrevmaterials.8.074408
Di Tian, Ludi Miao, Liang Si, Nathaniel J. Schreiber, Shengchun Shen, Jianbing Zhang, Xinyu Shu, Xiaochao Wang, Hari P. Nair, Jacob P. Ruf, Darrell G. Schlom, Kyle M. Shen, Pu Yu
With strong correlations between lattice, spin, and charge degrees of freedom, the layered ruthenate has attracted considerable interest over the past few decades due to its metal-insulator transition, antiferromagnetic-to-ferromagnetic transition, metamagnetic transition, and orbital ordering. Much effort has been devoted to manipulating its crystalline structure through epitaxial strain, chemical substitution, and pressure to clarify the underlying many-body physics and related quantum critical phenomena. Here we report a comprehensive proton intercalation study of thin films and investigate their magneto-transport properties arising from structural deformations and carrier doping. It reveals a rich phase diagram with distinct electronic and magnetic ground states. Specifically, with increasing gate voltage during ionic liquid gating, the film first evolves from an insulating state into a metallic state and then gradually turns towards an exotic Mott insulator. Furthermore, we observed an emergent metamagnetic transition from a canted antiferromagnetic to a nearly ferromagnetic state, a characteristic feature conventionally triggered by external magnetic field, but here with electron doping. Our first-principles calculations reveal that these unexpected features could be attributed to the proton evolution-induced synergistic structural distortion and electron doping during ionic liquid gating. Our findings highlight the important role of both lattice and charge degrees of freedom in the intriguing electronic states of and provide an effective approach to uncover different properties in quantum materials.
{"title":"Tuning the electronic and magnetic states of Ca2RuO4 with proton evolution","authors":"Di Tian, Ludi Miao, Liang Si, Nathaniel J. Schreiber, Shengchun Shen, Jianbing Zhang, Xinyu Shu, Xiaochao Wang, Hari P. Nair, Jacob P. Ruf, Darrell G. Schlom, Kyle M. Shen, Pu Yu","doi":"10.1103/physrevmaterials.8.074408","DOIUrl":"https://doi.org/10.1103/physrevmaterials.8.074408","url":null,"abstract":"With strong correlations between lattice, spin, and charge degrees of freedom, the layered ruthenate <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mi mathvariant=\"normal\">C</mi><msub><mi mathvariant=\"normal\">a</mi><mn>2</mn></msub><mi>Ru</mi><msub><mi mathvariant=\"normal\">O</mi><mn>4</mn></msub></mrow></math> has attracted considerable interest over the past few decades due to its metal-insulator transition, antiferromagnetic-to-ferromagnetic transition, metamagnetic transition, and orbital ordering. Much effort has been devoted to manipulating its crystalline structure through epitaxial strain, chemical substitution, and pressure to clarify the underlying many-body physics and related quantum critical phenomena. Here we report a comprehensive proton intercalation study of <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mi mathvariant=\"normal\">C</mi><msub><mi mathvariant=\"normal\">a</mi><mn>2</mn></msub><mi>Ru</mi><msub><mi mathvariant=\"normal\">O</mi><mn>4</mn></msub></mrow></math> thin films and investigate their magneto-transport properties arising from structural deformations and carrier doping. It reveals a rich phase diagram with distinct electronic and magnetic ground states. Specifically, with increasing gate voltage during ionic liquid gating, the film first evolves from an insulating state into a metallic state and then gradually turns towards an exotic Mott insulator. Furthermore, we observed an emergent metamagnetic transition from a canted antiferromagnetic to a nearly ferromagnetic state, a characteristic feature conventionally triggered by external magnetic field, but here with electron doping. Our first-principles calculations reveal that these unexpected features could be attributed to the proton evolution-induced synergistic structural distortion and electron doping during ionic liquid gating. Our findings highlight the important role of both lattice and charge degrees of freedom in the intriguing electronic states of <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mi mathvariant=\"normal\">C</mi><msub><mi mathvariant=\"normal\">a</mi><mn>2</mn></msub><mi>Ru</mi><msub><mi mathvariant=\"normal\">O</mi><mn>4</mn></msub></mrow></math> and provide an effective approach to uncover different properties in quantum materials.","PeriodicalId":20545,"journal":{"name":"Physical Review Materials","volume":"57 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141743222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-22DOI: 10.1103/physrevmaterials.8.075201
Zafer Kandemir, Pino D'Amico, Giacomo Sesti, Claudia Cardoso, Milorad V. Milošević, Cem Sevik
Having a strong electromagnetic absorption, MXene multilayers are readily envisaged for applications in electromagnetic shields and related prospective technology. However, an initio characterization of the optical properties of MXenes is still lacking, due in part to major difficulties with the treatment of metallicity in the first-principles approaches. Here we addressed the latter challenge, after a careful treatment of intraband transitions, to present a thorough analysis of the electronic and optical properties of a selected set of metallic MXene layers based on density functional theory (DFT) and many-body perturbation theory calculations. Our results reveal that the corrections are particularly important in regions of the band structure where and states hybridize. For some systems, we show that corrections open a gap between occupied states, resulting in a band structure that closely resembles that of an intrinsic transparent conductor, thereby opening an additional line of prospective applications for the MXenes family. Nevertheless, and Bethe-Salpeter corrections have a minimal influence on the absorption spectra, in contrast to what is typically observed in semiconductor layers. Our present results suggest that calculations within the independent particle approximation (IPA) calculations are sufficiently accurate for assessing the optical characteristics of bulk-layered MXene materials. Finally, our calculated dielectric properties and absorption spectra, in agreement with existing experimental data, confirm the potential of MXenes as effective infrared emitters.
MXene 多层板具有很强的电磁吸收能力，因此很容易被设想应用于电磁屏蔽和相关的前瞻性技术中。然而，由于第一性原理方法在处理金属性方面存在重大困难，因此目前仍缺乏对 MXene 光学特性的自证表征。在此，我们在仔细处理带内跃迁之后，根据密度泛函理论（DFT）和多体扰动理论计算，对选定的一组金属 MXene 层的电子和光学特性进行了全面分析，从而解决了后一个难题。我们的研究结果表明，GW 修正在带状结构中 d 和 p 态杂化的区域尤为重要。对于某些系统，我们发现 GW 修正在占据态之间打开了一个缺口，导致带状结构与本征透明导体的带状结构非常相似，从而为 MXenes 家族开辟了一条新的应用前景。尽管如此，GW 和 Bethe-Salpeter 修正对吸收光谱的影响微乎其微，这与半导体层中通常观察到的情况截然不同。我们目前的研究结果表明，独立粒子近似（IPA）计算的精确度足以评估体层 MXene 材料的光学特性。最后，我们计算出的介电性能和吸收光谱与现有的实验数据一致，证实了二氧化二烯作为有效红外发射器的潜力。
{"title":"Optical properties of metallic MXene multilayers through advanced first-principles calculations","authors":"Zafer Kandemir, Pino D'Amico, Giacomo Sesti, Claudia Cardoso, Milorad V. Milošević, Cem Sevik","doi":"10.1103/physrevmaterials.8.075201","DOIUrl":"https://doi.org/10.1103/physrevmaterials.8.075201","url":null,"abstract":"Having a strong electromagnetic absorption, MXene multilayers are readily envisaged for applications in electromagnetic shields and related prospective technology. However, an <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mi mathvariant=\"italic\">ab</mi></mrow></math> <i>initio</i> characterization of the optical properties of MXenes is still lacking, due in part to major difficulties with the treatment of metallicity in the first-principles approaches. Here we addressed the latter challenge, after a careful treatment of intraband transitions, to present a thorough analysis of the electronic and optical properties of a selected set of metallic MXene layers based on density functional theory (DFT) and many-body perturbation theory calculations. Our results reveal that the <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mi mathvariant=\"italic\">GW</mi></mrow></math> corrections are particularly important in regions of the band structure where <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mi mathvariant=\"italic\">d</mi></math> and <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mi mathvariant=\"italic\">p</mi></math> states hybridize. For some systems, we show that <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mi mathvariant=\"italic\">GW</mi></mrow></math> corrections open a gap between occupied states, resulting in a band structure that closely resembles that of an intrinsic transparent conductor, thereby opening an additional line of prospective applications for the MXenes family. Nevertheless, <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mi mathvariant=\"italic\">GW</mi></mrow></math> and Bethe-Salpeter corrections have a minimal influence on the absorption spectra, in contrast to what is typically observed in semiconductor layers. Our present results suggest that calculations within the independent particle approximation (IPA) calculations are sufficiently accurate for assessing the optical characteristics of bulk-layered MXene materials. Finally, our calculated dielectric properties and absorption spectra, in agreement with existing experimental data, confirm the potential of MXenes as effective infrared emitters.","PeriodicalId":20545,"journal":{"name":"Physical Review Materials","volume":"33 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141743323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-22DOI: 10.1103/physrevmaterials.8.075003
Wilson Román Acevedo, Myriam H. Aguirre, Beatriz Noheda, Diego Rubi
The use of machine learning algorithms is exponentially growing and concerns are being raised about their sustainability. Neuromorphic computing aims to mimic the architecture and the information processing mechanisms of the mammalian brain, appearing as the only avenue that offers significant energy savings compared to the standard digital computers. Memcapacitive devices, which can change their capacitance between different nonvolatile states upon the application of electrical stimulation, can significantly reduce the energy consumption of bio-inspired circuitry. In the present work, we study the multi-mem (memristive and memcapacitive) behavior of devices based on thin films of the topotactic redox (LSMCO) perovskite modified with Sm: (SCO), grown on Nb: with (001) and (110) out-of-plane orientations. Either the self-assembling at the nanoscale of both LSMCO and SCO phases or the doping with Ce(Sm) of the LSMCO perovskite were observed for different fabrication conditions and out-of-plane orientations. The impact of these changes on the device electrical behavior was determined. The optimum devices resulted those with (110) orientation and Ce(Sm) doping the perovskite. These devices displayed a multi-mem behavior with robust memcapacitance and significantly lower operation voltages (especially the reset voltage) in comparison with devices based on pristine LSMCO. In addition, they were able to endure electrical cycling—and the concomitant perovskite topotactic redox transition between oxidized and reduced phases—without suffering nanostructural changes nor cationic segregation. We link these properties to an enhanced perovskite reducibility upon Ce(Sm) doping. Our work contributes to increasing the reliability of LSMCO-based multi-mem systems and to reducing their operating voltages closer to the 1 V threshold, which are key issues for the development of nanodevices for neuromorphic or in-memory computing.
{"title":"Multi-mem behavior at reduced voltages in La1/2Sr1/2Mn1/2Co1/2O3−x perovskite modified with Sm:CeO2","authors":"Wilson Román Acevedo, Myriam H. Aguirre, Beatriz Noheda, Diego Rubi","doi":"10.1103/physrevmaterials.8.075003","DOIUrl":"https://doi.org/10.1103/physrevmaterials.8.075003","url":null,"abstract":"The use of machine learning algorithms is exponentially growing and concerns are being raised about their sustainability. Neuromorphic computing aims to mimic the architecture and the information processing mechanisms of the mammalian brain, appearing as the only avenue that offers significant energy savings compared to the standard digital computers. Memcapacitive devices, which can change their capacitance between different nonvolatile states upon the application of electrical stimulation, can significantly reduce the energy consumption of bio-inspired circuitry. In the present work, we study the multi-mem (memristive and memcapacitive) behavior of devices based on thin films of the topotactic redox <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mi mathvariant=\"normal\">L</mi><msub><mi mathvariant=\"normal\">a</mi><mrow><mn>1</mn><mo>/</mo><mn>2</mn></mrow></msub><mi mathvariant=\"normal\">S</mi><msub><mi mathvariant=\"normal\">r</mi><mrow><mn>1</mn><mo>/</mo><mn>2</mn></mrow></msub><mi mathvariant=\"normal\">M</mi><msub><mi mathvariant=\"normal\">n</mi><mrow><mn>1</mn><mo>/</mo><mn>2</mn></mrow></msub><mi mathvariant=\"normal\">C</mi><msub><mi mathvariant=\"normal\">o</mi><mrow><mn>1</mn><mo>/</mo><mn>2</mn></mrow></msub><msub><mi mathvariant=\"normal\">O</mi><mrow><mn>3</mn><mo>−</mo><mi>x</mi></mrow></msub></mrow></math> (LSMCO) perovskite modified with Sm:<math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mi>Ce</mi><msub><mi mathvariant=\"normal\">O</mi><mn>2</mn></msub></mrow></math> (SCO), grown on Nb:<math xmlns=\"http://www.w3.org/1998/Math/MathML\"><msub><mi>SrTiO</mi><mn>3</mn></msub></math> with (001) and (110) out-of-plane orientations. Either the self-assembling at the nanoscale of both LSMCO and SCO phases or the doping with Ce(Sm) of the LSMCO perovskite were observed for different fabrication conditions and out-of-plane orientations. The impact of these changes on the device electrical behavior was determined. The optimum devices resulted those with (110) orientation and Ce(Sm) doping the perovskite. These devices displayed a multi-mem behavior with robust memcapacitance and significantly lower operation voltages (especially the reset voltage) in comparison with devices based on pristine LSMCO. In addition, they were able to endure electrical cycling—and the concomitant perovskite topotactic redox transition between oxidized and reduced phases—without suffering nanostructural changes nor cationic segregation. We link these properties to an enhanced perovskite reducibility upon Ce(Sm) doping. Our work contributes to increasing the reliability of LSMCO-based multi-mem systems and to reducing their operating voltages closer to the 1 V threshold, which are key issues for the development of nanodevices for neuromorphic or in-memory computing.","PeriodicalId":20545,"journal":{"name":"Physical Review Materials","volume":"13 1","pages":""},"PeriodicalIF":3.4,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141743322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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