PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS: ICAM 2019最新文献

{"title":"Synthesis and structural characterization of BiSbTe3 topological insulator single crystal","authors":"Indu Rajput, A. Lakhani","doi":"10.1063/1.5130254","DOIUrl":"https://doi.org/10.1063/1.5130254","url":null,"abstract":"We report the synthesis and structural characterization of the topological insulator BiSbTe3 single crystal. In Bi2Te3, the Fermi level (EF) lies in the bulk conduction band due to electron type bulk carriers induced by Te vacancies. While in Sb2Te3, Fermi level lies in the bulk valance band due to hole type bulk carriers induced by Sb-Te antisite defects. It is difficult to observe the topological properties by transport experiments due to excess contribution from bulk states. By mixing these two compounds, the ratio of bismuth (Bi) to antimony (Sb) can shift the Fermi level (EF) from bulk conduction band to bulk valance band providing an opportunity to realize ideal topological insulator with insulating bulk. In (Bi1-xSbx)2Te3, at Bi:Sb ratio of 1:1, the Fermi level lies in the bulk gap which is ideal for probing topological surface states through transport measurements. We have grown good quality single crystals of BiSbTe3 using modified Bridgman method. The X-ray diffraction analysis, Scanning electron microscopy and Energy dispersive electron spectroscopy confirms the single crystal formation, phase purity and stoichiometric atomic ratio of the prepared crystal. The electrical resistivity measurement of the crystal shows the metallic nature and high quality of the grown crystal.We report the synthesis and structural characterization of the topological insulator BiSbTe3 single crystal. In Bi2Te3, the Fermi level (EF) lies in the bulk conduction band due to electron type bulk carriers induced by Te vacancies. While in Sb2Te3, Fermi level lies in the bulk valance band due to hole type bulk carriers induced by Sb-Te antisite defects. It is difficult to observe the topological properties by transport experiments due to excess contribution from bulk states. By mixing these two compounds, the ratio of bismuth (Bi) to antimony (Sb) can shift the Fermi level (EF) from bulk conduction band to bulk valance band providing an opportunity to realize ideal topological insulator with insulating bulk. In (Bi1-xSbx)2Te3, at Bi:Sb ratio of 1:1, the Fermi level lies in the bulk gap which is ideal for probing topological surface states through transport measurements. We have grown good quality single crystals of BiSbTe3 using modified Bridgman method. The X-ray diffraction analysis, Scanning electro...","PeriodicalId":20725,"journal":{"name":"PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS: ICAM 2019","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81831820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tuning the photocatalytic performance of Degussa P25 through phase ratio optimization","authors":"Pujita Ningthoukhongjam, Ranjith G. Nair","doi":"10.1063/1.5130242","DOIUrl":"https://doi.org/10.1063/1.5130242","url":null,"abstract":"Development of sustainable energy sources and methods for proper waste management is the need of the hour. Photocatalysis could be one of the potential solutions to mitigate both these problems. But, certain issues like narrow absorption range, low surface area and high charge carrier recombination limit the photocatalytic performance of catalysts like Degussa P25 (TiO2 powder). In this study, the effect of phase ratio on the physicochemical properties of Degussa P25 (DP25), particularly the dependence of photocatalytic activity on phase ratio is studied. The phase ratio of DP25 has been tuned to have different percentages of anatase and rutile phases via calcination. X-Ray Diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM), UV-vis spectroscopy and Photoluminescence (PL) were used to determine the structural, morphological and optical properties of the samples. XRD analyses confirmed that all the samples are in mixed phase with nanoscale crystallite sizes are found to be in the nanoscale. The phase ratio of anatase to rutile content of the samples was calculated using Spurr’s formula. The anatase to rutile (A/R) phase ratio was found to decrease with increase in calcination temperature. Tauc’s plot was used to determine the optical band gaps of the samples. PL studies were used to identify the trap levels. Photocatalytic test of the samples were conducted under Ultra Violet (UV) irradiation using Methylene Blue (MB) as probe pollutant. The role of phase ratio on photocatalytic performance was analyzed. The sample with A/R ratio 1.44 showed superior photocatalytic activity compared to others. This study confirms the need of phase ratio optimization of Degussa P25 to improve its photocatalytic performance further.Development of sustainable energy sources and methods for proper waste management is the need of the hour. Photocatalysis could be one of the potential solutions to mitigate both these problems. But, certain issues like narrow absorption range, low surface area and high charge carrier recombination limit the photocatalytic performance of catalysts like Degussa P25 (TiO2 powder). In this study, the effect of phase ratio on the physicochemical properties of Degussa P25 (DP25), particularly the dependence of photocatalytic activity on phase ratio is studied. The phase ratio of DP25 has been tuned to have different percentages of anatase and rutile phases via calcination. X-Ray Diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM), UV-vis spectroscopy and Photoluminescence (PL) were used to determine the structural, morphological and optical properties of the samples. XRD analyses confirmed that all the samples are in mixed phase with nanoscale crystallite sizes are found to be in the nanosca...","PeriodicalId":20725,"journal":{"name":"PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS: ICAM 2019","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75932622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High intense blue-violet luminescent carbon dots derived from camphor soot","authors":"S. A. Kumar, C. Joseph","doi":"10.1063/1.5130267","DOIUrl":"https://doi.org/10.1063/1.5130267","url":null,"abstract":"Highly luminescent carbon quantum dot with Blue-Violet emission was synthesized from camphor by simple combustion followed by sonication. Prepared carbon dots were characterized by transmission electron microscopy, uv absorption spectroscopy, Fourier transform infrared spectroscopy and photoluminescence spectroscopy. The synthesized carbon dots have very small size of less than 10nm. Fluorescence study of the prepared carbon dots revealed that it has an excitation independent emission in the near-uv wavelengths with a fluorescence red shift from 385nm to 430 nm by ageing.Highly luminescent carbon quantum dot with Blue-Violet emission was synthesized from camphor by simple combustion followed by sonication. Prepared carbon dots were characterized by transmission electron microscopy, uv absorption spectroscopy, Fourier transform infrared spectroscopy and photoluminescence spectroscopy. The synthesized carbon dots have very small size of less than 10nm. Fluorescence study of the prepared carbon dots revealed that it has an excitation independent emission in the near-uv wavelengths with a fluorescence red shift from 385nm to 430 nm by ageing.","PeriodicalId":20725,"journal":{"name":"PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS: ICAM 2019","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75240915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Deposition of tin oxide thin film by sol-gel dip coating technique and its characterization","authors":"B. R. Aswathy, K. Vinay, M. Arjun, P. Manoj","doi":"10.1063/1.5130344","DOIUrl":"https://doi.org/10.1063/1.5130344","url":null,"abstract":"Tin oxide (Sn3O4) thin films were deposited on glass substrate using inorganic precursor by sol gel dip coating technique. The structural studies of the films were obtained by X-ray diffraction technique and the data showed that the synthesized tin oxide films have triclinic structure with preferred orientation along (-2, 1, 0) and (-4, 2,0) plane. Optical studies revealed that the film having more thickness shows better transmission about 92% in the visible region and optical band gap energy increases to 2.93eV due to Moss-Burstein effect. The presence of tin and oxygen in the samples were confirmed with characteristic vibrational mode of Sn–O in the region 430–482 cm−1 and 669-674 cm−1 using FTIR spectroscopy. Photoluminescence spectra shows the presence of emission in the visible region depends on thickness of the film. This study suggests that the sol-gel dip coating method is the best method for fabricating highly pure, transparent and homogenous mixed valence phase of tin oxide thin film and further studies may be required to tailor electrical and optical properties of the films suitable for various optoelectronic applications.Tin oxide (Sn3O4) thin films were deposited on glass substrate using inorganic precursor by sol gel dip coating technique. The structural studies of the films were obtained by X-ray diffraction technique and the data showed that the synthesized tin oxide films have triclinic structure with preferred orientation along (-2, 1, 0) and (-4, 2,0) plane. Optical studies revealed that the film having more thickness shows better transmission about 92% in the visible region and optical band gap energy increases to 2.93eV due to Moss-Burstein effect. The presence of tin and oxygen in the samples were confirmed with characteristic vibrational mode of Sn–O in the region 430–482 cm−1 and 669-674 cm−1 using FTIR spectroscopy. Photoluminescence spectra shows the presence of emission in the visible region depends on thickness of the film. This study suggests that the sol-gel dip coating method is the best method for fabricating highly pure, transparent and homogenous mixed valence phase of tin oxide thin film and further...","PeriodicalId":20725,"journal":{"name":"PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS: ICAM 2019","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80615362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural and photoluminescence studies of cerium europium co-doped Strontium barium niobate","authors":"N. John","doi":"10.1063/1.5130225","DOIUrl":"https://doi.org/10.1063/1.5130225","url":null,"abstract":"Cerium Europium co-doped Strontium barium niobate (SBN) nano ceramic systems at different concentrations were prepared by sol gel method. The structural properties were characterised by X-ray diffraction, FTIR and Raman spectroscopy. X-ray diffraction analysis confirms the tetragonal structure of the prepared system. EDAX analysis confirms the components present in the sample. SEM image shows the needle like morphology of the nano system. XRD image confirms the particle size and crystalline planes of the prepared nanosized cerium europium doped SBN with the standard value. The broad absorption peak at 291 and 273 nm were observed for 0.1, 0.2 % Cerium, Europium co-doped SBN nano system. The absorption in the samples is from direct transition and the values of energy gap were calculated as 2.11 eV and. 2.27 eV. Photoluminescence studies shows the broad emission peaks at 419, 447, 493 nm due to 5d-4f Ce3+ transition levels. The peaks at 440, 449 nm were also observed due to the emission from SBN and less intense peaks at 558, 576, 588 nm due to the 5D0—7F0, 7F1 transitions of Eu3+ when excited at 305 nm wavelength. From the measured luminescence decay profiles, the tri-exponential lifetime of the 0.1% Cerium, Europium co-doped SBN nano system was calculated at 440 nm emission wavelength. Therefore the cerium europium co-doped SBN can be used for optical applications.Cerium Europium co-doped Strontium barium niobate (SBN) nano ceramic systems at different concentrations were prepared by sol gel method. The structural properties were characterised by X-ray diffraction, FTIR and Raman spectroscopy. X-ray diffraction analysis confirms the tetragonal structure of the prepared system. EDAX analysis confirms the components present in the sample. SEM image shows the needle like morphology of the nano system. XRD image confirms the particle size and crystalline planes of the prepared nanosized cerium europium doped SBN with the standard value. The broad absorption peak at 291 and 273 nm were observed for 0.1, 0.2 % Cerium, Europium co-doped SBN nano system. The absorption in the samples is from direct transition and the values of energy gap were calculated as 2.11 eV and. 2.27 eV. Photoluminescence studies shows the broad emission peaks at 419, 447, 493 nm due to 5d-4f Ce3+ transition levels. The peaks at 440, 449 nm were also observed due to the emission from SBN and less in...","PeriodicalId":20725,"journal":{"name":"PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS: ICAM 2019","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81187484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication of interdigitated electrodes (IDEs) modified with sensitive layers of ZnO nanorods and nanoflowers","authors":"A. Kumar, S. K. Kumar","doi":"10.1063/1.5130286","DOIUrl":"https://doi.org/10.1063/1.5130286","url":null,"abstract":"The novel nano structures of the sensitive layer with interdigitated electrodes (IDEs) platforms have a significant interest in miniaturized electrochemical sensor applications. Herein, we report the design fabrication and characterization of IDEs decorated with hydrothermal growth of ZnO nanorods (NRs) and nanoflowers (NFs) active layers. The IDEs patterns designed and tested using CIRCAD software tool with the dimension of 10 mm long, 0.5 mm wide and the 0.5 mm interspace between the adjacent fingers. A four-step deposition of ZnO seed layer followed by a hydrothermal treatment lead to produce the heavily ordered ZnO NFs and NRs patterns on the screen printed IDEs. The structural and chemical compositional of the NFs and NRs were examined by using field emission scanning electron microscopy (FeSEM), atomic force microscopy (AFM), energy dispersive spectroscopy (EDS), X-ray diffractometer (XRD). The screen printed IDEs decorated with NFs and NRs can be used in the design of future electrochemical sensor applications.The novel nano structures of the sensitive layer with interdigitated electrodes (IDEs) platforms have a significant interest in miniaturized electrochemical sensor applications. Herein, we report the design fabrication and characterization of IDEs decorated with hydrothermal growth of ZnO nanorods (NRs) and nanoflowers (NFs) active layers. The IDEs patterns designed and tested using CIRCAD software tool with the dimension of 10 mm long, 0.5 mm wide and the 0.5 mm interspace between the adjacent fingers. A four-step deposition of ZnO seed layer followed by a hydrothermal treatment lead to produce the heavily ordered ZnO NFs and NRs patterns on the screen printed IDEs. The structural and chemical compositional of the NFs and NRs were examined by using field emission scanning electron microscopy (FeSEM), atomic force microscopy (AFM), energy dispersive spectroscopy (EDS), X-ray diffractometer (XRD). The screen printed IDEs decorated with NFs and NRs can be used in the design of future electrochemical sensor ...","PeriodicalId":20725,"journal":{"name":"PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS: ICAM 2019","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74451753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photovoltaic performance of solution-processed ternary solar cells based on PTB7: PCBM and squaraine dye","authors":"B. Anitha, A. Alexander, M. Namboothiry","doi":"10.1063/1.5130331","DOIUrl":"https://doi.org/10.1063/1.5130331","url":null,"abstract":"The performance of poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl] [3-fluoro-2-[(2-ethylhexyl)carbonyl] thieno[3,4-b]thiophenediyl]]: [6,6]-phenyl-C70-butyric-acid-methyl-ester) (PTB7: PC70BM) based inverted bulk heterojunction organic solar cell by introducing squaraine (SQ) dye as the third component is investigated. The photovoltaic devices with an architecture ITO/ ZnO/ active layer/ MoO3 /Ag in which active layers of pristine PTB7: PCBM, and PTB7: PCBM: SQ with different concentrations of SQ are fabricated, and the J-V characteristics are measured under an illumination intensity of 100 mWcm−2. The effect of the introduction of SQ on the photovoltaic parameters of PTB7: PCBM solar cells are analyzed in detail. UV-Vis-NIR absorption spectra of the binary and ternary blends are recorded to study the variations in the absorption with different loadings of SQ in the ternary blends. The morphology of the blend films is analyzed by atomic force microscopy. To study the influence of device area on the cell parameters, solar cells of different active areas viz. 0.09, 0.25, 0.49, and 1 cm2 are made and the variation of cell parameters like short circuit current density, open circuit voltage and fill factor with device area is also studied.The performance of poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl] [3-fluoro-2-[(2-ethylhexyl)carbonyl] thieno[3,4-b]thiophenediyl]]: [6,6]-phenyl-C70-butyric-acid-methyl-ester) (PTB7: PC70BM) based inverted bulk heterojunction organic solar cell by introducing squaraine (SQ) dye as the third component is investigated. The photovoltaic devices with an architecture ITO/ ZnO/ active layer/ MoO3 /Ag in which active layers of pristine PTB7: PCBM, and PTB7: PCBM: SQ with different concentrations of SQ are fabricated, and the J-V characteristics are measured under an illumination intensity of 100 mWcm−2. The effect of the introduction of SQ on the photovoltaic parameters of PTB7: PCBM solar cells are analyzed in detail. UV-Vis-NIR absorption spectra of the binary and ternary blends are recorded to study the variations in the absorption with different loadings of SQ in the ternary blends. The morphology of the blend films is analyzed by atomic force microscopy. To study the influence of ...","PeriodicalId":20725,"journal":{"name":"PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS: ICAM 2019","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84371200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of temperature on the electrical properties of selenium thin films","authors":"Sunil Thomas, N. Qamhieh, S. Mahmoud","doi":"10.1063/1.5130356","DOIUrl":"https://doi.org/10.1063/1.5130356","url":null,"abstract":"In the present study, selenium thin films of thickness ∼2.1 µm were synthesized using thermal evaporation method. The presence of selenium in the sample was confirmed using energy dispersive spectrum. Vibration analysis of the structural groups in the samples, before and after annealing, was carried out using Raman spectroscopy. The crystallization of the sample due to annealing was studied using X-ray diffraction. The change in the energy band gap of the film due to annealing was estimated from the Urbach edge of the absorption spectrum. Electrical properties namely conductance and capacitance at different voltages were investigated. Changes in the conductance and capacitance when heating the sample from room temperature to 400 K were studied.In the present study, selenium thin films of thickness ∼2.1 µm were synthesized using thermal evaporation method. The presence of selenium in the sample was confirmed using energy dispersive spectrum. Vibration analysis of the structural groups in the samples, before and after annealing, was carried out using Raman spectroscopy. The crystallization of the sample due to annealing was studied using X-ray diffraction. The change in the energy band gap of the film due to annealing was estimated from the Urbach edge of the absorption spectrum. Electrical properties namely conductance and capacitance at different voltages were investigated. Changes in the conductance and capacitance when heating the sample from room temperature to 400 K were studied.","PeriodicalId":20725,"journal":{"name":"PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS: ICAM 2019","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76725942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"S, N co-doped graphene quantum dots decorated ZnO nanorods for “Green” quantum dot sensitized solar cells","authors":"T. Majumder, S. Dhar, P. Chakraborty, S. P. Mondal","doi":"10.1063/1.5130271","DOIUrl":"https://doi.org/10.1063/1.5130271","url":null,"abstract":"In this article, we have synthesized N and S co-doped graphene quantum dots (SNGQDs) using low cost hydrothermal process. The particle size of SNGQDs is distributed within the range of 2-25 nm. Quantum dot sensitized solar cells (QDSSCs) were fabricated by attaching SNGQDs with ZnO nanorods grown on fluorine doped tin oxide (FTO) coated glass substrates. The SNGQDs sensitized ZnO NR photoanodes demonstrated power conversion efficiency ∼0.27%, which was 7 times higher than pristine ZnO nanorod based device.In this article, we have synthesized N and S co-doped graphene quantum dots (SNGQDs) using low cost hydrothermal process. The particle size of SNGQDs is distributed within the range of 2-25 nm. Quantum dot sensitized solar cells (QDSSCs) were fabricated by attaching SNGQDs with ZnO nanorods grown on fluorine doped tin oxide (FTO) coated glass substrates. The SNGQDs sensitized ZnO NR photoanodes demonstrated power conversion efficiency ∼0.27%, which was 7 times higher than pristine ZnO nanorod based device.","PeriodicalId":20725,"journal":{"name":"PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS: ICAM 2019","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81438276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Observation of room temperature Raman, magnetic and ferroelectric response of (1 − x)NiCo2O4 − xBaTiO3 nanocomposites system","authors":"S. Karmakar, B. Sahoo, D. Behera","doi":"10.1063/1.5130316","DOIUrl":"https://doi.org/10.1063/1.5130316","url":null,"abstract":"","PeriodicalId":20725,"journal":{"name":"PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS: ICAM 2019","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88331133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}