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Solid State Technology最新文献

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Surface science analysis techniques 表面科学分析技术
Q4 Materials Science Pub Date : 1983-01-01 DOI: 10.1016/0026-2714(83)90437-7
J. Buono, A. Wisniewski, W. S. Andrus
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引用次数: 3
Applications of profile simulation for thin film deposition and etching processes 轮廓模拟在薄膜沉积和蚀刻过程中的应用
Q4 Materials Science Pub Date : 1983-01-01 DOI: 10.1016/0026-2714(83)91482-8
C. Ting, A. Neureuther
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引用次数: 15
Reactive ion etching of polysilicon and tantalum silicide. 多晶硅和硅化钽的反应性离子蚀刻。
Q4 Materials Science Pub Date : 1983-01-01 DOI: 10.1016/0026-2714(84)90834-5
W. Beinvogl, B. Hasler
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引用次数: 2
Amorphous metallic alloys in semiconductor contact metallizations 半导体接触金属化中的非晶态金属合金
Q4 Materials Science Pub Date : 1983-01-01 DOI: 10.1016/0026-2714(84)90362-7
M. Nicolet, I. Suni, M. Finetti
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引用次数: 43
A process for two-layer gold IC metallization 一种双层金集成电路金属化工艺
Q4 Materials Science Pub Date : 1983-01-01 DOI: 10.1016/0026-2714(84)90332-9
D. Summers
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引用次数: 5
High-speed reactive ion etching of silicon by the application of a confined DC bias 用限制直流偏压对硅进行高速反应离子刻蚀
Q4 Materials Science Pub Date : 1983-01-01 DOI: 10.1016/0026-2714(84)90434-7
A. Nagy
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引用次数: 0
Laser induced backside damage gettering 激光诱导背面损伤吸收
Q4 Materials Science Pub Date : 1983-01-01 DOI: 10.1016/0026-2714(84)90438-4
G. Eggermont, R. Falster, S. Hahn
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引用次数: 8
A new ion dose uniformity measurement technique 一种新的离子剂量均匀性测量技术
Q4 Materials Science Pub Date : 1983-01-01 DOI: 10.1016/0026-2714(84)90439-6
J. Cheng, G. Tripp
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引用次数: 7
Wafer inspection automation: current and future needs 晶圆检测自动化:当前和未来的需求
Q4 Materials Science Pub Date : 1983-01-01 DOI: 10.1016/0026-2714(84)90563-8
K. Harris, P. Sandland, R. M. Singleton
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引用次数: 20
Oxygen and carbon measurements on silicon slices by the IR method 用红外光谱法测定硅片上的氧和碳
Q4 Materials Science Pub Date : 1983-01-01 DOI: 10.1016/0026-2714(84)90603-6
P. Stallhofer, D. Huber
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引用次数: 13
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Solid State Technology
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