Pub Date : 2024-09-02DOI: 10.1088/1361-6668/ad6adb
Yu P Korneeva, M A Dryazgov, N V Porokhov, N N Osipov, M I Krasilnikov, A A Korneev, M A Tarkhov
We present a study of thin-film Mo resistors for NbN electronics operating at cryogenic temperatures. The key step is the 0.5–1.5 keV ion cleaning–activation of NbN before Mo deposition, which allows us to obtain a high-quality Mo/NbN interface. This, together with an additional Al bandage layer in the area of the contact pads, allows us to reduce the contact resistance below 1 Ω. The quality of the interfaces is confirmed by transmission electron microscopy and x-ray reflectometry.
我们介绍了一项关于在低温下工作的氮化铌电子薄膜钼电阻器的研究。关键步骤是在钼沉积之前对铌镍进行 0.5-1.5 keV 的离子清洗活化,从而获得高质量的钼/铌镍界面。透射电子显微镜和 X 射线反射仪证实了界面的质量。
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Pub Date : 2024-09-02DOI: 10.1088/1361-6668/ad70db
Raphael Unterrainer, Davide Gambino, Florian Semper, Alexander Bodenseher, Daniele Torsello, Francesco Laviano, David X Fischer, Michael Eisterer
Rare-earth-barium-copper-oxide based coated conductors exhibit a relatively low radiation robustness compared to e.g. Nb<sub>3</sub>Sn due to the <italic toggle="yes">d</italic>-wave symmetry of the order parameter, rendering impurity scattering pair breaking. The type and size of the introduced defects influence the degrading effects on the superconducting properties; thus the disorder cannot be quantified by the number of displaced atoms alone. In order to develop degradation mitigation strategies for radiation intense environments, it is relevant to distinguish between detrimental and beneficial defect structures. Gadolinium-barium-copper-oxide based samples irradiated with the full TRIGA Mark II fission reactor spectrum accumulate a high density of point-like defects and small clusters due to <italic toggle="yes">n</italic> - <italic toggle="yes">γ</italic> capture reactions of gadolinium. This leads to a 14–15 times stronger degradation of the critical temperature compared to samples shielded from slow neutrons. At the same time both irradiation techniques lead to the same degradation behavior of the critical current density as function of the transition temperature <inline-formula>