Summary form only given. We present a process that seals an exposed AlAs layer against further oxidative decomposition. The sealant is formed by a rapid thermal anneal (RTA) to a temperature of /spl sim/500 to 600/spl deg/C in forming gas after brief exposure of the AlAs surface to the typical room environment. The surface barrier layer thus formed is thin and impermeable to diffusing oxygen species, even at elevated temperatures, and can be thermally cycled. An important feature of the surface layer is its ability to fully block, and therefore mask, a steam oxidation of AlAs. To demonstrate its application in device fabrication, the RTA oxide is used to mask certain AlAs layers of an AlAs/GaAs Bragg reflector and thefefore to achieve wet oxidation only in the AlAs layers closest to the active region of an all-epitaxial VCSEL.
{"title":"Sealing AlAs against oxidative decomposition and its use in device fabrication","authors":"D. Huffaker, D. Deppe, C. Lei, L. Hodge","doi":"10.1063/1.115635","DOIUrl":"https://doi.org/10.1063/1.115635","url":null,"abstract":"Summary form only given. We present a process that seals an exposed AlAs layer against further oxidative decomposition. The sealant is formed by a rapid thermal anneal (RTA) to a temperature of /spl sim/500 to 600/spl deg/C in forming gas after brief exposure of the AlAs surface to the typical room environment. The surface barrier layer thus formed is thin and impermeable to diffusing oxygen species, even at elevated temperatures, and can be thermally cycled. An important feature of the surface layer is its ability to fully block, and therefore mask, a steam oxidation of AlAs. To demonstrate its application in device fabrication, the RTA oxide is used to mask certain AlAs layers of an AlAs/GaAs Bragg reflector and thefefore to achieve wet oxidation only in the AlAs layers closest to the active region of an all-epitaxial VCSEL.","PeriodicalId":22169,"journal":{"name":"Summaries of papers presented at the Conference on Lasers and Electro-Optics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76071291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. In this work, we present a novel laser pulse compression technique for Ti:sapphire chirped pulse laser amplifiers, based on spectral broadening in a hollow cylindrical quartz fiber filled with noble gases at high pressure, which is suitable for high-energy pulses. Pulse recompression is then achieved using two conventional quartz prism pairs.
{"title":"Generation of high-energy 10-fs pulses by a new pulse compression technique","authors":"M. Nisoli, S. D. Silveshi, O. Svelto","doi":"10.1063/1.116609","DOIUrl":"https://doi.org/10.1063/1.116609","url":null,"abstract":"Summary form only given. In this work, we present a novel laser pulse compression technique for Ti:sapphire chirped pulse laser amplifiers, based on spectral broadening in a hollow cylindrical quartz fiber filled with noble gases at high pressure, which is suitable for high-energy pulses. Pulse recompression is then achieved using two conventional quartz prism pairs.","PeriodicalId":22169,"journal":{"name":"Summaries of papers presented at the Conference on Lasers and Electro-Optics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81890814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-06-02DOI: 10.1007/978-94-009-1665-4_10
D. Sievenpiper, M. Sickmiller, E. Yablonovitch
{"title":"3-D metallic photonic bandgap structures","authors":"D. Sievenpiper, M. Sickmiller, E. Yablonovitch","doi":"10.1007/978-94-009-1665-4_10","DOIUrl":"https://doi.org/10.1007/978-94-009-1665-4_10","url":null,"abstract":"","PeriodicalId":22169,"journal":{"name":"Summaries of papers presented at the Conference on Lasers and Electro-Optics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81135200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Antonetti, J. Chambaret, G. Chériaux, P. Curley, G. Darpentigny, G. Hamoniaux, C. Le Blanc, P. Rousseau, F. Salin
Summary form only given. We describe here a Ti:sapphire laser amplifier producing 15 TW pulses at 10 Hz, which has been designed to produce pedestal-free pulses. To reduce any prepulse, we designed the amplifier with broad transmission bandwidth, minimum material path length, high gain and an aberration-free system for stretching and recompressing the pulses.
{"title":"Generation of 15-TW femtosecond pulses at 10 Hz in a Ti:sapphire laser chain","authors":"A. Antonetti, J. Chambaret, G. Chériaux, P. Curley, G. Darpentigny, G. Hamoniaux, C. Le Blanc, P. Rousseau, F. Salin","doi":"10.1364/hfsw.1997.sac3","DOIUrl":"https://doi.org/10.1364/hfsw.1997.sac3","url":null,"abstract":"Summary form only given. We describe here a Ti:sapphire laser amplifier producing 15 TW pulses at 10 Hz, which has been designed to produce pedestal-free pulses. To reduce any prepulse, we designed the amplifier with broad transmission bandwidth, minimum material path length, high gain and an aberration-free system for stretching and recompressing the pulses.","PeriodicalId":22169,"journal":{"name":"Summaries of papers presented at the Conference on Lasers and Electro-Optics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90592466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. Commercial single-mode distributed Bragg reflector (DBR) laser diodes now produce output powers comparable to commercial single-mode Fabry-Perot laser diodes. Within this presentation, high-power tunable AlGaAs DBR laser diodes with single-mode output powers exceeding 200 mW cw are described. In addition, an 16,000 hr. ongoing lifetest on DBR laser diodes will be presented. These results represent over an order of magnitude increase in the output power of tunable DBR laser diodes and excellent proof that regrown AlGaAs laser diodes can have exceptional reliability.
{"title":"Tunable high-power AlGaAs distributed Bragg reflector laser diodes","authors":"V. Gulgazov, J. Major, H. Zhao, D. Welch","doi":"10.1049/EL:19970007","DOIUrl":"https://doi.org/10.1049/EL:19970007","url":null,"abstract":"Summary form only given. Commercial single-mode distributed Bragg reflector (DBR) laser diodes now produce output powers comparable to commercial single-mode Fabry-Perot laser diodes. Within this presentation, high-power tunable AlGaAs DBR laser diodes with single-mode output powers exceeding 200 mW cw are described. In addition, an 16,000 hr. ongoing lifetest on DBR laser diodes will be presented. These results represent over an order of magnitude increase in the output power of tunable DBR laser diodes and excellent proof that regrown AlGaAs laser diodes can have exceptional reliability.","PeriodicalId":22169,"journal":{"name":"Summaries of papers presented at the Conference on Lasers and Electro-Optics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86248938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Syrbu, V. Yakovlev, G. Suruceanu, A. Mereutza, L. Mawst, A. Bhattacharya, M. Nesnidal, J. Lopez, D. Boetz
Summary form only given. We report on the cw performance of optimized facet-coated InGaAs/InGaAsP/InGaP (/spl lambda/=0.95 /spl mu/m) diode lasers as well as on the improvement in their performance as the facets are passivated by in-situ growth of ZnSe half-wave films. The results represent record-high values for both front-facet-emitted cw power: 2.9 W, as well as maximum cw wallplug efficiency: 54%.
{"title":"ZnSe-facet-passivated InGaAs/InGaAsP/InGaP diode lasers of high cw power and \"wallplug\" efficiency","authors":"A. Syrbu, V. Yakovlev, G. Suruceanu, A. Mereutza, L. Mawst, A. Bhattacharya, M. Nesnidal, J. Lopez, D. Boetz","doi":"10.1049/EL:19960251","DOIUrl":"https://doi.org/10.1049/EL:19960251","url":null,"abstract":"Summary form only given. We report on the cw performance of optimized facet-coated InGaAs/InGaAsP/InGaP (/spl lambda/=0.95 /spl mu/m) diode lasers as well as on the improvement in their performance as the facets are passivated by in-situ growth of ZnSe half-wave films. The results represent record-high values for both front-facet-emitted cw power: 2.9 W, as well as maximum cw wallplug efficiency: 54%.","PeriodicalId":22169,"journal":{"name":"Summaries of papers presented at the Conference on Lasers and Electro-Optics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86567109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. A low-cost, efficient fiber amplifier based on imbedded v-groove side-pumping of a double-cladding fiber was demonstrated. Side-pumping of double-cladding active fibers has the following advantages i) fiber ends are unobstructed and can be directly spliced to other fibers, ii) multiple v-grooves can be used to inject pump power at many points along the fiber, iii) no WDM couplers are required. These advantages yield a compact and efficient amplifier configuration and more than tenfold cost reduction. Improvements in the coupling efficiency and fiber slope efficiency, as well as the use of multiple v-grooves are expected to yield output powers well above the 154 mW demonstrated here.
{"title":"V-groove side-pumped 1.5-/spl mu/m fiber amplifier","authors":"L. Goldberg, D. Ripin, E. Snitzer, B. Cole","doi":"10.1049/EL:19971471","DOIUrl":"https://doi.org/10.1049/EL:19971471","url":null,"abstract":"Summary form only given. A low-cost, efficient fiber amplifier based on imbedded v-groove side-pumping of a double-cladding fiber was demonstrated. Side-pumping of double-cladding active fibers has the following advantages i) fiber ends are unobstructed and can be directly spliced to other fibers, ii) multiple v-grooves can be used to inject pump power at many points along the fiber, iii) no WDM couplers are required. These advantages yield a compact and efficient amplifier configuration and more than tenfold cost reduction. Improvements in the coupling efficiency and fiber slope efficiency, as well as the use of multiple v-grooves are expected to yield output powers well above the 154 mW demonstrated here.","PeriodicalId":22169,"journal":{"name":"Summaries of papers presented at the Conference on Lasers and Electro-Optics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85775253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. We present the first theoretical treatment of waveguiding in VCSELs that properly includes the effects of the resonant cavity. The resulting treatment immediately suggests new designs for leaky-mode (antiguided) VCSELs that should result in devices operating in the fundamental mode to powers much higher than presently attainable.
{"title":"Understanding waveguiding in vertical-cavity surface-emitting lasers","authors":"G. R. Hadley, K. Choquette, K. Lear","doi":"10.1364/IPR.1996.ITuE6","DOIUrl":"https://doi.org/10.1364/IPR.1996.ITuE6","url":null,"abstract":"Summary form only given. We present the first theoretical treatment of waveguiding in VCSELs that properly includes the effects of the resonant cavity. The resulting treatment immediately suggests new designs for leaky-mode (antiguided) VCSELs that should result in devices operating in the fundamental mode to powers much higher than presently attainable.","PeriodicalId":22169,"journal":{"name":"Summaries of papers presented at the Conference on Lasers and Electro-Optics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84830940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Hwang, X. Y. Zou, S.H. Huang, W. Shieh, A. Willner
Summary form only given. In this work, we experimentally demonstrate passive equalization of the nonuniform gain of cascaded Er-doped fiber amplifers (EDFAs) for which a newly-generated gain peak appears near 1560 nm. The passive equalization is accomplished over a 7.4-nm wavelength range by periodically using notch filters along a 1000-km transmission link. Our results show that the signal power differential among the four WDM channels is reduced from 19 dB to 4 dB and that the 10/sup -9/ BER receiver sensitivity differential among the channels is decreased from 7.5 dB to only 3 dB.
{"title":"Passive equalization of four 2.5-Gbit/s WDM channels over 1,000 km using notch filters","authors":"S. Hwang, X. Y. Zou, S.H. Huang, W. Shieh, A. Willner","doi":"10.1049/EL:19960377","DOIUrl":"https://doi.org/10.1049/EL:19960377","url":null,"abstract":"Summary form only given. In this work, we experimentally demonstrate passive equalization of the nonuniform gain of cascaded Er-doped fiber amplifers (EDFAs) for which a newly-generated gain peak appears near 1560 nm. The passive equalization is accomplished over a 7.4-nm wavelength range by periodically using notch filters along a 1000-km transmission link. Our results show that the signal power differential among the four WDM channels is reduced from 19 dB to 4 dB and that the 10/sup -9/ BER receiver sensitivity differential among the channels is decreased from 7.5 dB to only 3 dB.","PeriodicalId":22169,"journal":{"name":"Summaries of papers presented at the Conference on Lasers and Electro-Optics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77148605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
G. Aka, L. Bloch, J. Bénitez, P. Crochet, A. Kahn-Harari, D. Viven, F. Salin, P. Coquelin, D. Collier
Summary form only given. In summary we introduce a new family of borate crystals, which can be grown by the Czochralski method. The first element of this family was characterized for femtosecond nonlinear optical effects and compared favorably with existing crystals such as BBO.
{"title":"New nonlinear oxoborate crystal, characterized by using femtosecond broadband pulses","authors":"G. Aka, L. Bloch, J. Bénitez, P. Crochet, A. Kahn-Harari, D. Viven, F. Salin, P. Coquelin, D. Collier","doi":"10.1364/ASSL.1996.FC1","DOIUrl":"https://doi.org/10.1364/ASSL.1996.FC1","url":null,"abstract":"Summary form only given. In summary we introduce a new family of borate crystals, which can be grown by the Czochralski method. The first element of this family was characterized for femtosecond nonlinear optical effects and compared favorably with existing crystals such as BBO.","PeriodicalId":22169,"journal":{"name":"Summaries of papers presented at the Conference on Lasers and Electro-Optics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74697048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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