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Enhancing Performance of Perovskite Nanocrystal Light-Emitting Diodes with Perfluorinated Ionomer and PEDOT:PSS 用全氟离子聚合物和 PEDOT:PSS 提高 Perovskite 纳米晶发光二极管的性能
IF 1.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
Transactions on Electrical and Electronic Materials
Pub Date : 2024-01-06 DOI: 10.1007/s42341-023-00499-9
Gwangyong Shin, Donghwan Yun, Yeongwoo Ha, Yunhye Jeong, Youngchae Cho, Seungmin Baek, Hyeseon Shin, Vivek Vishal Sharma, Gi-Hwan Kim
{"title":"Enhancing Performance of Perovskite Nanocrystal Light-Emitting Diodes with Perfluorinated Ionomer and PEDOT:PSS","authors":"Gwangyong Shin, Donghwan Yun, Yeongwoo Ha, Yunhye Jeong, Youngchae Cho, Seungmin Baek, Hyeseon Shin, Vivek Vishal Sharma, Gi-Hwan Kim","doi":"10.1007/s42341-023-00499-9","DOIUrl":"https://doi.org/10.1007/s42341-023-00499-9","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"2 8","pages":"1-8"},"PeriodicalIF":1.9,"publicationDate":"2024-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139380769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Facile Strategy to Achieve High Piezoelectric Performance in Electrospun Poly(Vinylidene Fluoride) Non-woven Nanofabrics 实现电纺聚偏氟乙烯非织造纳米织物高压电性能的简便策略
IF 1.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
Transactions on Electrical and Electronic Materials
Pub Date : 2023-12-23 DOI: 10.1007/s42341-023-00495-z
Mohammed Khalifa, Manish Kumar, Gokul Subramanian, S. Anandhan
{"title":"A Facile Strategy to Achieve High Piezoelectric Performance in Electrospun Poly(Vinylidene Fluoride) Non-woven Nanofabrics","authors":"Mohammed Khalifa, Manish Kumar, Gokul Subramanian, S. Anandhan","doi":"10.1007/s42341-023-00495-z","DOIUrl":"https://doi.org/10.1007/s42341-023-00495-z","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"18 11","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139162439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials 探索 4H-SiC MOSFET 的高温可靠性：高 K 栅极电介质材料的比较研究
IF 1.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
Transactions on Electrical and Electronic Materials
Pub Date : 2023-12-20 DOI: 10.1007/s42341-023-00497-x
M. V. Ganeswara Rao, N. Ramanjaneyulu, Sumalatha Madugula, N. P. Dharani, K. Rajesh Babu, Kallepelli Sagar
{"title":"Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials","authors":"M. V. Ganeswara Rao, N. Ramanjaneyulu, Sumalatha Madugula, N. P. Dharani, K. Rajesh Babu, Kallepelli Sagar","doi":"10.1007/s42341-023-00497-x","DOIUrl":"https://doi.org/10.1007/s42341-023-00497-x","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"87 16","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138954281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Biological Ferroelectret Property Based on β-Chitin Nanofibrils of Deep-Sea Tubeworms 基于深海管虫 β-甲壳素纳米纤维的生物铁电体特性
IF 1.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
Transactions on Electrical and Electronic Materials
Pub Date : 2023-12-18 DOI: 10.1007/s42341-023-00500-5
Hyunseung Kim, Gyoung-Ja Lee, Yu Ogawa, Yebin Lee, Min-Ku Lee, Changyeon Baek, Chang Kyu Jeong
{"title":"Biological Ferroelectret Property Based on β-Chitin Nanofibrils of Deep-Sea Tubeworms","authors":"Hyunseung Kim, Gyoung-Ja Lee, Yu Ogawa, Yebin Lee, Min-Ku Lee, Changyeon Baek, Chang Kyu Jeong","doi":"10.1007/s42341-023-00500-5","DOIUrl":"https://doi.org/10.1007/s42341-023-00500-5","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"19 6","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139172969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Deposited 2D/3D Perovskite Heterojunctions Though Vapor-Assisted Solution Process for Restraining Intermixing Between the Two Phases 通过气相辅助溶液工艺沉积 2D/3D Perovskite 异质结以抑制两相之间的混合
IF 1.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
Transactions on Electrical and Electronic Materials
Pub Date : 2023-12-08 DOI: 10.1007/s42341-023-00498-w
Zhifeng Shang, Yingke Ren, Guoquan Nie, Xilong Ma, Xing Gao
{"title":"Deposited 2D/3D Perovskite Heterojunctions Though Vapor-Assisted Solution Process for Restraining Intermixing Between the Two Phases","authors":"Zhifeng Shang, Yingke Ren, Guoquan Nie, Xilong Ma, Xing Gao","doi":"10.1007/s42341-023-00498-w","DOIUrl":"https://doi.org/10.1007/s42341-023-00498-w","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"90 9","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138586484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Deposition Technique of SiNx Passivation Layer on the Electrical DC and RF Properties of AlGaN/GaN HEMTs SiNx 钝化层沉积技术对 AlGaN/GaN HEMT 的直流和射频电气特性的影响
IF 1.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
Transactions on Electrical and Electronic Materials
Pub Date : 2023-12-07 DOI: 10.1007/s42341-023-00492-2
Yağmur Güler, Barış Onaylı, M. T. Haliloğlu, D. Yılmaz, T. Asar, Ekmel Özbay
{"title":"Effect of Deposition Technique of SiNx Passivation Layer on the Electrical DC and RF Properties of AlGaN/GaN HEMTs","authors":"Yağmur Güler, Barış Onaylı, M. T. Haliloğlu, D. Yılmaz, T. Asar, Ekmel Özbay","doi":"10.1007/s42341-023-00492-2","DOIUrl":"https://doi.org/10.1007/s42341-023-00492-2","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"117 15","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-12-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138590620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of the Substitution of Barium by Calcium on the Opto-Electronic Properties of Barium tin Oxide 钙取代钡对氧化钡锡光电特性的影响
IF 1.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
Transactions on Electrical and Electronic Materials
Pub Date : 2023-12-06 DOI: 10.1007/s42341-023-00494-0
F. Z. Gadouche, A. Kabir, S. Siouane, C. Sedrati, A. Bouabellou, G. Schmerber
{"title":"Effect of the Substitution of Barium by Calcium on the Opto-Electronic Properties of Barium tin Oxide","authors":"F. Z. Gadouche, A. Kabir, S. Siouane, C. Sedrati, A. Bouabellou, G. Schmerber","doi":"10.1007/s42341-023-00494-0","DOIUrl":"https://doi.org/10.1007/s42341-023-00494-0","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"39 6","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138596241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical Performance of the Double Gate Reverse T-Shaped Channel TFET in Near Visible Light Photodetector 近可见光光电探测器中双栅极反向 T 型沟道 TFET 的光学性能
IF 1.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
Transactions on Electrical and Electronic Materials
Pub Date : 2023-11-30 DOI: 10.1007/s42341-023-00493-1
K. Manikanta, U. Nanda
{"title":"Optical Performance of the Double Gate Reverse T-Shaped Channel TFET in Near Visible Light Photodetector","authors":"K. Manikanta, U. Nanda","doi":"10.1007/s42341-023-00493-1","DOIUrl":"https://doi.org/10.1007/s42341-023-00493-1","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"412 ","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139204045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Minimization of Electrical Signal Interference with Appropriate Core Material for 3D IC at THz Applications 在太赫兹应用中为 3D 集成电路提供合适的芯材，最大限度地减少电信号干扰
IF 1.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
Transactions on Electrical and Electronic Materials
Pub Date : 2023-11-29 DOI: 10.1007/s42341-023-00496-y
Santosh Kumar Tallapalli, V. Vijayakumar, N. Vignesh, Asisa Kumar Panigrahy
{"title":"Minimization of Electrical Signal Interference with Appropriate Core Material for 3D IC at THz Applications","authors":"Santosh Kumar Tallapalli, V. Vijayakumar, N. Vignesh, Asisa Kumar Panigrahy","doi":"10.1007/s42341-023-00496-y","DOIUrl":"https://doi.org/10.1007/s42341-023-00496-y","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"76 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139210105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Correction: Fabrication and Characterization of Carbon Nanotubes-Based Pressure Nanosensors: A Study on Piezoresistive Behavior 更正：基于碳纳米管的压力纳米传感器的制造与表征：压阻行为研究
IF 1.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
Transactions on Electrical and Electronic Materials
Pub Date : 2023-11-29 DOI: 10.1007/s42341-023-00491-3
Faiza Khan, Talha Mubashir, Kainat Ahmed, Abdul Mateen, Soonil Lee, Tauseef Ahmed
{"title":"Correction: Fabrication and Characterization of Carbon Nanotubes-Based Pressure Nanosensors: A Study on Piezoresistive Behavior","authors":"Faiza Khan, Talha Mubashir, Kainat Ahmed, Abdul Mateen, Soonil Lee, Tauseef Ahmed","doi":"10.1007/s42341-023-00491-3","DOIUrl":"https://doi.org/10.1007/s42341-023-00491-3","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"15 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2023-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139212576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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