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Transactions on Electrical and Electronic Materials最新文献

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Influence on Post-treatment Process on Optical and Electrical Properties of IZO Thin Films 后处理工艺对 IZO 薄膜光学和电学特性的影响
IF 1.9 Q2 Engineering Pub Date : 2024-03-14 DOI: 10.1007/s42341-024-00517-4
Jinsu Jung, Doowon Lee, Myoungsu Chae, Hee-Dong Kim
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引用次数: 0
Sensitivity Study of Spin-Coated Metal Oxides Thin Films for Extended Gate Field-Effect Transistor (EGFET) pH Sensor 用于扩展栅极场效应晶体管 (EGFET) pH 传感器的自旋涂层金属氧化物薄膜的灵敏度研究
IF 1.9 Q2 Engineering Pub Date : 2024-03-05 DOI: 10.1007/s42341-024-00522-7
N. Kamarozaman, Nurbaya Zainal, M. A. Zulkefle, R. A. Rahman, A. B. Rosli, S. H. Herman, Z. Zulkifli
{"title":"Sensitivity Study of Spin-Coated Metal Oxides Thin Films for Extended Gate Field-Effect Transistor (EGFET) pH Sensor","authors":"N. Kamarozaman, Nurbaya Zainal, M. A. Zulkefle, R. A. Rahman, A. B. Rosli, S. H. Herman, Z. Zulkifli","doi":"10.1007/s42341-024-00522-7","DOIUrl":"https://doi.org/10.1007/s42341-024-00522-7","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140264079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of Structural and Electrical Characterization of Doped and Undoped Cd0.75Se0.25 Bulk Material for Solar Cell Application 用于太阳能电池的掺杂和未掺杂 Cd0.75Se0.25 块状材料的结构和电气特性研究
IF 1.9 Q2 Engineering Pub Date : 2024-02-28 DOI: 10.1007/s42341-024-00518-3
Deepak Kumar Singh, Anupam Srivastava, Sachin Singh, D. K. Dwivedi
{"title":"Study of Structural and Electrical Characterization of Doped and Undoped Cd0.75Se0.25 Bulk Material for Solar Cell Application","authors":"Deepak Kumar Singh, Anupam Srivastava, Sachin Singh, D. K. Dwivedi","doi":"10.1007/s42341-024-00518-3","DOIUrl":"https://doi.org/10.1007/s42341-024-00518-3","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140419238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Consistent Performance ZnO TFT Based Single Transistor Nonvolatile Memory with Minimal Charge Loss 基于氧化锌 TFT 的单晶体管非易失性存储器性能稳定、电荷损耗最小
IF 1.9 Q2 Engineering Pub Date : 2024-02-24 DOI: 10.1007/s42341-024-00519-2
Binay Binod Kumar, Kunal Singh
{"title":"Consistent Performance ZnO TFT Based Single Transistor Nonvolatile Memory with Minimal Charge Loss","authors":"Binay Binod Kumar, Kunal Singh","doi":"10.1007/s42341-024-00519-2","DOIUrl":"https://doi.org/10.1007/s42341-024-00519-2","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140434356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance Investigation of Bottom Gate ZnO Based TFT for High-Speed Digital Display Circuit Applications 用于高速数字显示电路应用的底栅氧化锌基 TFT 性能研究
IF 1.9 Q2 Engineering Pub Date : 2024-02-19 DOI: 10.1007/s42341-024-00515-6
Binay Binod Kumar, Shubham Kumar, P. Tiwari, Aniruddh Bahadur Yadav, S. Dubey, Kunal Singh
{"title":"Performance Investigation of Bottom Gate ZnO Based TFT for High-Speed Digital Display Circuit Applications","authors":"Binay Binod Kumar, Shubham Kumar, P. Tiwari, Aniruddh Bahadur Yadav, S. Dubey, Kunal Singh","doi":"10.1007/s42341-024-00515-6","DOIUrl":"https://doi.org/10.1007/s42341-024-00515-6","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140451152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Edge Electronic States and Direct Bandgap in Si Nanostructures on Silicon Oxide 氧化硅纳米结构中的边缘电子态和直接带隙
IF 1.9 Q2 Engineering Pub Date : 2024-02-19 DOI: 10.1007/s42341-024-00516-5
Zhong-mei Huang, Xi Zhang, Yin-lian Li, Wei-Qi Huang, Hao-Ze Wang, Yu Yang, Anchen Wang, Shi-rong Liu
{"title":"Edge Electronic States and Direct Bandgap in Si Nanostructures on Silicon Oxide","authors":"Zhong-mei Huang, Xi Zhang, Yin-lian Li, Wei-Qi Huang, Hao-Ze Wang, Yu Yang, Anchen Wang, Shi-rong Liu","doi":"10.1007/s42341-024-00516-5","DOIUrl":"https://doi.org/10.1007/s42341-024-00516-5","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140451977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Short-Term Load Forecasting of Microgrid Based on TVFEMD-LSTM-ARMAX Model 基于 TVFEMD-LSTM-ARMAX 模型的微电网短期负荷预测
IF 1.9 Q2 Engineering Pub Date : 2024-02-17 DOI: 10.1007/s42341-023-00506-z
Yufeng Yin, Wenbo Wang, Minjie Yu
{"title":"Short-Term Load Forecasting of Microgrid Based on TVFEMD-LSTM-ARMAX Model","authors":"Yufeng Yin, Wenbo Wang, Minjie Yu","doi":"10.1007/s42341-023-00506-z","DOIUrl":"https://doi.org/10.1007/s42341-023-00506-z","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139960516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of Eco-friendly Perovskite Solar Cell Employing Niobium Pentoxide as Electron Transport Material using SCAPS-1D 利用 SCAPS-1D 研究采用五氧化二铌作为电子传输材料的环保型 Perovskite 太阳能电池
IF 1.9 Q2 Engineering Pub Date : 2024-02-13 DOI: 10.1007/s42341-024-00509-4
Vaibhava Srivastava, R. K. Chauhan, P. Lohia, Shivangi Yadav
{"title":"Investigation of Eco-friendly Perovskite Solar Cell Employing Niobium Pentoxide as Electron Transport Material using SCAPS-1D","authors":"Vaibhava Srivastava, R. K. Chauhan, P. Lohia, Shivangi Yadav","doi":"10.1007/s42341-024-00509-4","DOIUrl":"https://doi.org/10.1007/s42341-024-00509-4","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139841378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of Eco-friendly Perovskite Solar Cell Employing Niobium Pentoxide as Electron Transport Material using SCAPS-1D 利用 SCAPS-1D 研究采用五氧化二铌作为电子传输材料的环保型 Perovskite 太阳能电池
IF 1.9 Q2 Engineering Pub Date : 2024-02-13 DOI: 10.1007/s42341-024-00509-4
Vaibhava Srivastava, R. K. Chauhan, P. Lohia, Shivangi Yadav
{"title":"Investigation of Eco-friendly Perovskite Solar Cell Employing Niobium Pentoxide as Electron Transport Material using SCAPS-1D","authors":"Vaibhava Srivastava, R. K. Chauhan, P. Lohia, Shivangi Yadav","doi":"10.1007/s42341-024-00509-4","DOIUrl":"https://doi.org/10.1007/s42341-024-00509-4","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139781586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Density Functional Quantum Computations to Investigate the Physical Prospects of Lead-Free Chloro-Perovskites QAgCl3 (Q = K, Rb) for Optoelectronic Applications 通过密度泛函量子计算研究无铅氯过氧化物 QAgCl3(Q = K、Rb)在光电应用中的物理前景
IF 1.9 Q2 Engineering Pub Date : 2024-02-06 DOI: 10.1007/s42341-024-00514-7
Saeed Ullah, Munawar Abbas, Saad Tariq, Khalid Mujasam Batoo, Nasir Rahman, Uzma Gul, Mudasser Husain, Sajjad Hussain, Mohamed Musa Saad Hasb Elkhalig, Muhammad Usman Ghani
{"title":"Density Functional Quantum Computations to Investigate the Physical Prospects of Lead-Free Chloro-Perovskites QAgCl3 (Q = K, Rb) for Optoelectronic Applications","authors":"Saeed Ullah, Munawar Abbas, Saad Tariq, Khalid Mujasam Batoo, Nasir Rahman, Uzma Gul, Mudasser Husain, Sajjad Hussain, Mohamed Musa Saad Hasb Elkhalig, Muhammad Usman Ghani","doi":"10.1007/s42341-024-00514-7","DOIUrl":"https://doi.org/10.1007/s42341-024-00514-7","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139802051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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Transactions on Electrical and Electronic Materials
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