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Numerical Simulation of Inertial Based PDMS Microchannel for Blood Cell Sorting 基于惯性的PDMS微通道血细胞分选的数值模拟
IF 1.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2023-07-20 DOI: 10.1007/s42341-023-00459-3
S. Ramya, S. Praveen Kumar, G. Ram, D. Lingaraja
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引用次数: 0
Design and Study of a Micro Solar Converter Connected to an Autonomous Photovoltaic System 与自主光伏系统相连的微型太阳能转换器的设计与研究
IF 1.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2023-07-13 DOI: 10.1007/s42341-023-00458-4
Mustapha Belhabib, Azzedine Hamid, Abderrahim Mokhefi, V. Bley, T. Alili, F. Z. Medjaoui
{"title":"Design and Study of a Micro Solar Converter Connected to an Autonomous Photovoltaic System","authors":"Mustapha Belhabib, Azzedine Hamid, Abderrahim Mokhefi, V. Bley, T. Alili, F. Z. Medjaoui","doi":"10.1007/s42341-023-00458-4","DOIUrl":"https://doi.org/10.1007/s42341-023-00458-4","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"24 1","pages":"396 - 411"},"PeriodicalIF":1.9,"publicationDate":"2023-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42998908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and Investigation of the DM- PC-TFET-Based Biosensor for Breast Cancer Cell Detection 基于DM- pc - tfet的乳腺癌细胞检测生物传感器的设计与研究
IF 1.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2023-07-01 DOI: 10.1007/s42341-023-00453-9
Mukesh Kumar Bind, Sajai Vir Singh, Kaushal Kumar Nigam
{"title":"Design and Investigation of the DM- PC-TFET-Based Biosensor for Breast Cancer Cell Detection","authors":"Mukesh Kumar Bind, Sajai Vir Singh, Kaushal Kumar Nigam","doi":"10.1007/s42341-023-00453-9","DOIUrl":"https://doi.org/10.1007/s42341-023-00453-9","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"24 1","pages":"381 - 395"},"PeriodicalIF":1.9,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46288585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Potential Analysis of Double Gate Vertical TFET Using 2-D Modeling for Low Power Application 低功耗应用中双栅垂直TFET的二维建模电位分析
IF 1.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2023-06-16 DOI: 10.1007/s42341-023-00449-5
H. Kumar, A. K. Verma, Ashish Patle, Somendra Kumar Soni, Girish Wadhwa
{"title":"Potential Analysis of Double Gate Vertical TFET Using 2-D Modeling for Low Power Application","authors":"H. Kumar, A. K. Verma, Ashish Patle, Somendra Kumar Soni, Girish Wadhwa","doi":"10.1007/s42341-023-00449-5","DOIUrl":"https://doi.org/10.1007/s42341-023-00449-5","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"24 1","pages":"314 - 322"},"PeriodicalIF":1.9,"publicationDate":"2023-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42610622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Electrical Characteristics of 1200 V Trench Gate MOSFET Based on SiC 基于SiC的1200v沟槽栅MOSFET的电学特性
IF 1.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2023-06-14 DOI: 10.1007/s42341-023-00451-x
E. Kang
{"title":"The Electrical Characteristics of 1200 V Trench Gate MOSFET Based on SiC","authors":"E. Kang","doi":"10.1007/s42341-023-00451-x","DOIUrl":"https://doi.org/10.1007/s42341-023-00451-x","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"24 1","pages":"330 - 335"},"PeriodicalIF":1.9,"publicationDate":"2023-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41952372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Frequency Response Characteristics Depending on the Metal Capping Structure and Length of the Amorphous SiZnSnO Thin Film Transistor 非晶SiZnSnO薄膜晶体管的金属覆盖结构和长度的频率响应特性
IF 1.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2023-06-14 DOI: 10.1007/s42341-023-00454-8
J. Lee, B. Ju, Sang Yeol Lee
{"title":"Frequency Response Characteristics Depending on the Metal Capping Structure and Length of the Amorphous SiZnSnO Thin Film Transistor","authors":"J. Lee, B. Ju, Sang Yeol Lee","doi":"10.1007/s42341-023-00454-8","DOIUrl":"https://doi.org/10.1007/s42341-023-00454-8","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"24 1","pages":"279 - 284"},"PeriodicalIF":1.9,"publicationDate":"2023-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41952302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Harnessing the Role of Charge Transport Layers for Efficient Design of PBDBT/ITIC-OE Based Organic Solar Cell 利用电荷传输层的作用高效设计PBDBT/ tic - oe基有机太阳能电池
IF 1.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2023-06-14 DOI: 10.1007/s42341-023-00456-6
Ayush Tara, V. Bharti, Susheel Sharma, Rockey Gupta
{"title":"Harnessing the Role of Charge Transport Layers for Efficient Design of PBDBT/ITIC-OE Based Organic Solar Cell","authors":"Ayush Tara, V. Bharti, Susheel Sharma, Rockey Gupta","doi":"10.1007/s42341-023-00456-6","DOIUrl":"https://doi.org/10.1007/s42341-023-00456-6","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"24 1","pages":"356 - 364"},"PeriodicalIF":1.9,"publicationDate":"2023-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48137433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thickness-Regulated Harmonious Effect on the Optical and Electrical Characteristics of ZnO Nano-Crystalline Thin Films for High Mobility Transparent Electrode 厚度调节对高迁移率透明电极ZnO纳米晶薄膜光电特性的影响
IF 1.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2023-06-13 DOI: 10.1007/s42341-023-00450-y
M. R. Rahman, Mohammad Nasir Uddin, Tasnim Ashrafy, M. Hoq
{"title":"Thickness-Regulated Harmonious Effect on the Optical and Electrical Characteristics of ZnO Nano-Crystalline Thin Films for High Mobility Transparent Electrode","authors":"M. R. Rahman, Mohammad Nasir Uddin, Tasnim Ashrafy, M. Hoq","doi":"10.1007/s42341-023-00450-y","DOIUrl":"https://doi.org/10.1007/s42341-023-00450-y","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"24 1","pages":"323 - 329"},"PeriodicalIF":1.9,"publicationDate":"2023-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43747548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of DC and Analog/RF Performances Analysis of Short Channel Surrounded Gate Junctionless Graded Channel Gate Stack MOSFET 短沟道包围栅无连接分级沟道栅堆叠MOSFET的直流和模拟/RF性能分析
IF 1.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2023-06-13 DOI: 10.1007/s42341-023-00455-7
Sarita Misra, S. Biswal, Biswajit Baral, Sudhansu Kumar Pati
{"title":"Study of DC and Analog/RF Performances Analysis of Short Channel Surrounded Gate Junctionless Graded Channel Gate Stack MOSFET","authors":"Sarita Misra, S. Biswal, Biswajit Baral, Sudhansu Kumar Pati","doi":"10.1007/s42341-023-00455-7","DOIUrl":"https://doi.org/10.1007/s42341-023-00455-7","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"24 1","pages":"346 - 355"},"PeriodicalIF":1.9,"publicationDate":"2023-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43358862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Halo-Doped Hetero Dielectric Nanowire MOSFET Scaled to the Sub-10 nm Node Halo掺杂异质介电纳米线MOSFET的亚10nm节点
IF 1.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2023-06-06 DOI: 10.1007/s42341-023-00448-6
P. K. Kumar, B. Balaji, K. S. Rao
{"title":"Halo-Doped Hetero Dielectric Nanowire MOSFET Scaled to the Sub-10 nm Node","authors":"P. K. Kumar, B. Balaji, K. S. Rao","doi":"10.1007/s42341-023-00448-6","DOIUrl":"https://doi.org/10.1007/s42341-023-00448-6","url":null,"abstract":"","PeriodicalId":23222,"journal":{"name":"Transactions on Electrical and Electronic Materials","volume":"24 1","pages":"303 - 313"},"PeriodicalIF":1.9,"publicationDate":"2023-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46130266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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Transactions on Electrical and Electronic Materials
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