Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459279
Henri Ruotsalainen, H. Arthaber
In this paper the performance of a digital quadrature PWM modulator for switched-mode wideband transmitters is evaluated. The purpose of the evaluation is to analyze the impact of the modulator parameter settings on the signal band quantization noise and on the average power efficiency of the complete digital transmitter. Considering a realistic setup at GHz range, the performance conditions for an accurate operation are studied as well. According to the results a higher average transmitter efficiency can be expected for a 10 MHz LTE signal excitation when compared with a similar modulator structure utilizing ΣΔ modulation.
{"title":"Evaluation of quadrature PWM modulator performance for digital wideband transmitters","authors":"Henri Ruotsalainen, H. Arthaber","doi":"10.23919/EUMC.2012.6459279","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459279","url":null,"abstract":"In this paper the performance of a digital quadrature PWM modulator for switched-mode wideband transmitters is evaluated. The purpose of the evaluation is to analyze the impact of the modulator parameter settings on the signal band quantization noise and on the average power efficiency of the complete digital transmitter. Considering a realistic setup at GHz range, the performance conditions for an accurate operation are studied as well. According to the results a higher average transmitter efficiency can be expected for a 10 MHz LTE signal excitation when compared with a similar modulator structure utilizing ΣΔ modulation.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129445298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459304
I. Kang, Young-Gon Kim, Dong-Sik Woo, Sung-Kyun Kim, K. Kim
In this paper, a new design method of a tunable oscillator using a suspended-stripline resonator is presented. The negative resistance of an FET mounted on microstrip line (MSL) is combined with a high Q suspended-stripline (SSL) resonator to produce a tunable oscillator with good phase noise. The new MSL-to-SSL transition facilitates easy connection between the MSL-based circuits and the SSL module. The proposed oscillator is also frequency-tunable using a tuner located on the top of the SSL housing. The measured phase noise of the implemented oscillator at 5.148 GHz is -104.34 dBc@100 kHz and -133.21 dBc@1 MHz with 125.7 MHz of frequency tuning.
{"title":"Design of a tunable oscillator using a suspended-stripline resonator","authors":"I. Kang, Young-Gon Kim, Dong-Sik Woo, Sung-Kyun Kim, K. Kim","doi":"10.23919/EUMC.2012.6459304","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459304","url":null,"abstract":"In this paper, a new design method of a tunable oscillator using a suspended-stripline resonator is presented. The negative resistance of an FET mounted on microstrip line (MSL) is combined with a high Q suspended-stripline (SSL) resonator to produce a tunable oscillator with good phase noise. The new MSL-to-SSL transition facilitates easy connection between the MSL-based circuits and the SSL module. The proposed oscillator is also frequency-tunable using a tuner located on the top of the SSL housing. The measured phase noise of the implemented oscillator at 5.148 GHz is -104.34 dBc@100 kHz and -133.21 dBc@1 MHz with 125.7 MHz of frequency tuning.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131638451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459317
M. Tsuchiya, T. Shiozawa
It has been successfully demonstrated that K-band signal behaviors in a monolithic microwave integrated circuits (MMIC) module can be visually observed and analyzed. The visual observations and analyses were performed experimentally by the live electrooptic imaging technique. The module consists of three radio-frequency ports and a MMIC chip of DC-50 GHz single pole double throw switch. Its basic switching actions were visualized clearly while the following parasitic phenomena were visually captured; cavity resonances, their dependences on the module operation modes, and coupling between the input and output lines.
{"title":"Live electrooptic imaging of K-band switching actions and parasitic phenomena in MMIC module","authors":"M. Tsuchiya, T. Shiozawa","doi":"10.23919/EUMC.2012.6459317","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459317","url":null,"abstract":"It has been successfully demonstrated that K-band signal behaviors in a monolithic microwave integrated circuits (MMIC) module can be visually observed and analyzed. The visual observations and analyses were performed experimentally by the live electrooptic imaging technique. The module consists of three radio-frequency ports and a MMIC chip of DC-50 GHz single pole double throw switch. Its basic switching actions were visualized clearly while the following parasitic phenomena were visually captured; cavity resonances, their dependences on the module operation modes, and coupling between the input and output lines.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131936636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459316
H. Noto, H. Maehara, H. Uchida, M. Koyanagi, H. Utsumi, J. Nishihara, H. Otsuka, K. Yamanaka, M. Nakayama, Y. Hirano
In this paper, internally matched GaN-HEMT high power amplifiers operating at X- and Ku-bands are presented. For the X-band amplifier, small package is adopted to reduce the over all RF module size. For the Ku-band amplifier, 4 transistor power bars are combined to obtain 100W output power. To the best of our knowledge, this is the first report that more than 100W output power is obtained from single solid state device in Ku-band.
{"title":"X- and Ku-band internally matched GaN amplifiers with more than 100W output power","authors":"H. Noto, H. Maehara, H. Uchida, M. Koyanagi, H. Utsumi, J. Nishihara, H. Otsuka, K. Yamanaka, M. Nakayama, Y. Hirano","doi":"10.23919/EUMC.2012.6459316","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459316","url":null,"abstract":"In this paper, internally matched GaN-HEMT high power amplifiers operating at X- and Ku-bands are presented. For the X-band amplifier, small package is adopted to reduce the over all RF module size. For the Ku-band amplifier, 4 transistor power bars are combined to obtain 100W output power. To the best of our knowledge, this is the first report that more than 100W output power is obtained from single solid state device in Ku-band.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130357887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459243
V. Carrubba, S. Maroldt, M. Musser, H. Walcher, M. Schlechtweg, R. Quay, O. Ambacher
This paper presents a dual-band multiharmonic Class-ABJ high power amplifier (PA) realized in AlGaN/GaN technology. In the Class-ABJ theory power and efficiency are theoretically maintained constant for the wide band spectrum frequency due to the ability to accommodate simultaneous fundamental and harmonic reactive terminations. Here it will be shown that by using the Class-ABJ theory, it is possible to optimize power, gain and efficiency for different frequency bands in a high PA design. The realized Class-ABJ power amplifier delivers drain efficiency greater than 55% with output power and gain greater than 42.4-44.4 dBm and 10-11 dB respectively for the two frequency bands 2.05-2.22 GHz and 2.45-2.58 GHz at around 2-3 dB of compression level.
{"title":"Dual-band Class-ABJ AlGaN/GaN high power amplifier","authors":"V. Carrubba, S. Maroldt, M. Musser, H. Walcher, M. Schlechtweg, R. Quay, O. Ambacher","doi":"10.23919/EUMC.2012.6459243","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459243","url":null,"abstract":"This paper presents a dual-band multiharmonic Class-ABJ high power amplifier (PA) realized in AlGaN/GaN technology. In the Class-ABJ theory power and efficiency are theoretically maintained constant for the wide band spectrum frequency due to the ability to accommodate simultaneous fundamental and harmonic reactive terminations. Here it will be shown that by using the Class-ABJ theory, it is possible to optimize power, gain and efficiency for different frequency bands in a high PA design. The realized Class-ABJ power amplifier delivers drain efficiency greater than 55% with output power and gain greater than 42.4-44.4 dBm and 10-11 dB respectively for the two frequency bands 2.05-2.22 GHz and 2.45-2.58 GHz at around 2-3 dB of compression level.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114080894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459212
V. Kvicera, M. Grábner, O. Fiser
Long-term statistics of hydrometeor attenuation obtained on two experimental parallel terrestrial paths at 58 GHz and 93 GHz with the same path length of 850 m are presented. The statistics of rain attenuation obtained are used for the frequency scaling. Several methods are tested and the results obtained are discussed.
{"title":"Frequency scaling of rain attenuation based on 4-year statistics obtained on two parallel terrestrial paths at 58 GHz and 93 GHz","authors":"V. Kvicera, M. Grábner, O. Fiser","doi":"10.23919/EUMC.2012.6459212","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459212","url":null,"abstract":"Long-term statistics of hydrometeor attenuation obtained on two experimental parallel terrestrial paths at 58 GHz and 93 GHz with the same path length of 850 m are presented. The statistics of rain attenuation obtained are used for the frequency scaling. Several methods are tested and the results obtained are discussed.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"254 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123074337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459221
A. Déchansiaud, R. Sommet, T. Reveyrand, R. Quéré, D. Bouw, C. Chang, M. Camiade, F. Deborgies
This paper reports on the design of a new power cell dedicated to Ku-band power amplifier (PA) applications. This cell called “`integrated cascode'” has been designed in order to propose a strong decrease in term of circuit size for Power Amplifier (PA). The technology used relies on 0.25-μm GaAs Pseudomorphic High Electron Mobility Transistors (PHEMT) of United Monolithic Semiconductors (UMS) foundry. A distributed approach is proposed in order to model this power cell. The challenge consists to obtain, with a better shape factor (ratio between the vertical and horizontal sizes of the transistor), the same performances than a single transistor with the same gate development. In order to design a 2W amplifier, we have used two 12×100 μm transistors. Cascode vertical size is 413 μm whereas a transistor with the same gate development exhibits a vertical size of 790 μm. Therefore the shape factor is nearly one as compared to a shape factor of 4 for a classical parallel architecture. This new device allows to decrease the MMIC amplifier area of 40 % compared with amplifier based on single transistors.
{"title":"Design of an integrated cascode cell for compact Ku-band power amplifiers","authors":"A. Déchansiaud, R. Sommet, T. Reveyrand, R. Quéré, D. Bouw, C. Chang, M. Camiade, F. Deborgies","doi":"10.23919/EUMC.2012.6459221","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459221","url":null,"abstract":"This paper reports on the design of a new power cell dedicated to Ku-band power amplifier (PA) applications. This cell called “`integrated cascode'” has been designed in order to propose a strong decrease in term of circuit size for Power Amplifier (PA). The technology used relies on 0.25-μm GaAs Pseudomorphic High Electron Mobility Transistors (PHEMT) of United Monolithic Semiconductors (UMS) foundry. A distributed approach is proposed in order to model this power cell. The challenge consists to obtain, with a better shape factor (ratio between the vertical and horizontal sizes of the transistor), the same performances than a single transistor with the same gate development. In order to design a 2W amplifier, we have used two 12×100 μm transistors. Cascode vertical size is 413 μm whereas a transistor with the same gate development exhibits a vertical size of 790 μm. Therefore the shape factor is nearly one as compared to a shape factor of 4 for a classical parallel architecture. This new device allows to decrease the MMIC amplifier area of 40 % compared with amplifier based on single transistors.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121558263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459292
K. Eero, Kurttio Pasi, H. Antti, H. Veli-Matti, P. Jani, T. Timo, Lanfranco Sandro, K. Tapio, S. Hans
One of the main challenges in 4G base station transceivers today is to achieve high enough RF isolation between the transmitter and the receiver. Conventionally a large and expensive cavity filter design is required. We propose a novel small size receiver band self-interference cancellation amplifier solution that can reduce the filtering requirements up to 40dB and thus reduce filter size significantly (e.g. 30...40%).
{"title":"Small size receiver band self-interference cancellation amplifier for 4G transceivers","authors":"K. Eero, Kurttio Pasi, H. Antti, H. Veli-Matti, P. Jani, T. Timo, Lanfranco Sandro, K. Tapio, S. Hans","doi":"10.23919/EUMC.2012.6459292","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459292","url":null,"abstract":"One of the main challenges in 4G base station transceivers today is to achieve high enough RF isolation between the transmitter and the receiver. Conventionally a large and expensive cavity filter design is required. We propose a novel small size receiver band self-interference cancellation amplifier solution that can reduce the filtering requirements up to 40dB and thus reduce filter size significantly (e.g. 30...40%).","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124433524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459375
R. Ben Yishay, R. Carmon, O. Katz, B. Sheinman, D. Elad
This paper presents a fully integrated 71-76 GHz power amplifiers (PA) fabricated in a 0.12 μm SiGe BiCMOS technology. The PA employs five common-emitter stages with on-chip power combining to achieve power gain of 21 dB, 17.6 dBm output power at 1 dB compression, and saturated power of 20.1 dBm. The modified Wilkinson combiner that was used shows 0.5 dB insertion loss. Small signal characteristics of the amplifier show peak gain at 72 GHz with 3 dB bandwidth of 17GHz (24%). The PA's bias is applied using digitally adjustable PTAT bias circuits and it consumes quiescent currents of 140 mA from a 2 V supply and 280 mA at 1 dB compression.
{"title":"A 20dBm E-band power amplifier in SiGe BiCMOS technology","authors":"R. Ben Yishay, R. Carmon, O. Katz, B. Sheinman, D. Elad","doi":"10.23919/EUMC.2012.6459375","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459375","url":null,"abstract":"This paper presents a fully integrated 71-76 GHz power amplifiers (PA) fabricated in a 0.12 μm SiGe BiCMOS technology. The PA employs five common-emitter stages with on-chip power combining to achieve power gain of 21 dB, 17.6 dBm output power at 1 dB compression, and saturated power of 20.1 dBm. The modified Wilkinson combiner that was used shows 0.5 dB insertion loss. Small signal characteristics of the amplifier show peak gain at 72 GHz with 3 dB bandwidth of 17GHz (24%). The PA's bias is applied using digitally adjustable PTAT bias circuits and it consumes quiescent currents of 140 mA from a 2 V supply and 280 mA at 1 dB compression.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115972547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459282
P. Cruz, N. Carvalho, M. Valkama
This paper proposes a new design for second-order bandpass sampling receivers based on passive 90° hybrids and two parallel ADCs sampled with the same clock. Such a topology is suitable for wideband digital receivers appointed for software defined radio and spectrum sensing capable cognitive radios. The proposed architecture and digital compensation algorithm are a simple solution for the reception of a modulated signal under an adjacent stronger interference and for multiband multi-carrier modulated signal communication, due to its available bandwidth maximization. The results will be assessed in terms of spectrum representation and error vector magnitude evaluation.
{"title":"Evaluation of second-order bandpass sampling receivers for software defined radio","authors":"P. Cruz, N. Carvalho, M. Valkama","doi":"10.23919/EUMC.2012.6459282","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459282","url":null,"abstract":"This paper proposes a new design for second-order bandpass sampling receivers based on passive 90° hybrids and two parallel ADCs sampled with the same clock. Such a topology is suitable for wideband digital receivers appointed for software defined radio and spectrum sensing capable cognitive radios. The proposed architecture and digital compensation algorithm are a simple solution for the reception of a modulated signal under an adjacent stronger interference and for multiband multi-carrier modulated signal communication, due to its available bandwidth maximization. The results will be assessed in terms of spectrum representation and error vector magnitude evaluation.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132115244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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