Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459285
K. Hasegawa, R. Ishikawa, A. Saitou, K. Honjo
A novel spatially modulated communication method with electrically controlled dual scatterers has been proposed for wireless power transmission systems. Electromagnetic wave interference produced by the scatterers forms the spatial modulation, whose precise mechanism has been successfully formulated using the array factor theory. The scatterers are formed by lumped-element embedded miniature antennas, which are short-circuit terminated. One of those scatterers includes an integrated voltage-controlled varactor for changing the array factor. For a frequency range from 5.5 to 6.2 GHz, a fabricated module exhibits an excellent spatial modulation potential with a dynamic range of 9.6 to 19.9 dB. The spatial modulation experiment was carried out using base-band signals such as sine-waves and square-waves. A measured AM-modulation factor of 60% was achieved.
{"title":"Spatially modulated communication method using dual scatterers for wireless power transmission","authors":"K. Hasegawa, R. Ishikawa, A. Saitou, K. Honjo","doi":"10.23919/EUMC.2012.6459285","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459285","url":null,"abstract":"A novel spatially modulated communication method with electrically controlled dual scatterers has been proposed for wireless power transmission systems. Electromagnetic wave interference produced by the scatterers forms the spatial modulation, whose precise mechanism has been successfully formulated using the array factor theory. The scatterers are formed by lumped-element embedded miniature antennas, which are short-circuit terminated. One of those scatterers includes an integrated voltage-controlled varactor for changing the array factor. For a frequency range from 5.5 to 6.2 GHz, a fabricated module exhibits an excellent spatial modulation potential with a dynamic range of 9.6 to 19.9 dB. The spatial modulation experiment was carried out using base-band signals such as sine-waves and square-waves. A measured AM-modulation factor of 60% was achieved.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125017508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459139
I. Sakagami, Xiaolong Wang, K. Takahashi, S. Okamura, M. Tahara
There are three approaches for the use of composite right/left-handed transmission lines (CRLH TLs) in Horst Wilkinson power dividers (WPDs) because an original WPD presented by Horst includes two transmission line sections in its even- and odd-mode equivalent circuits. In this paper, two of them are presented in order to realize dual-band operation. The range of upper and lower band frequency ratios varies according to the application of CRLH TLs.
{"title":"Horst-type wilkinson power dividers for dual-band operation","authors":"I. Sakagami, Xiaolong Wang, K. Takahashi, S. Okamura, M. Tahara","doi":"10.23919/EUMC.2012.6459139","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459139","url":null,"abstract":"There are three approaches for the use of composite right/left-handed transmission lines (CRLH TLs) in Horst Wilkinson power dividers (WPDs) because an original WPD presented by Horst includes two transmission line sections in its even- and odd-mode equivalent circuits. In this paper, two of them are presented in order to realize dual-band operation. The range of upper and lower band frequency ratios varies according to the application of CRLH TLs.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115586183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459337
O. Glubokov, D. Budimir
A novel filter based on e-plane metal-dielectric insert in rectangular waveguide is proposed. Properties of the structure containing metallic septa, C- and I-shaped resonators placed in waveguide are investigated. Pseudo-elliptic cross-coupled filter with direct source-load coupling is designed, simulated and fabricated. Experimental results are presented to prove feasibility of the filter. Significant size reduction is achieved.
{"title":"Compact filters using metal-dielectric inserts","authors":"O. Glubokov, D. Budimir","doi":"10.23919/EUMC.2012.6459337","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459337","url":null,"abstract":"A novel filter based on e-plane metal-dielectric insert in rectangular waveguide is proposed. Properties of the structure containing metallic septa, C- and I-shaped resonators placed in waveguide are investigated. Pseudo-elliptic cross-coupled filter with direct source-load coupling is designed, simulated and fabricated. Experimental results are presented to prove feasibility of the filter. Significant size reduction is achieved.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"8 4 Suppl 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116862603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459076
H. Maune, O. Bengtsson, F. Golden, M. Sazegar, R. Jakoby, W. Heinrich
In this paper, a tunable power amplifier is demonstrated based on a GaN-transistor and a matching network based on Barium-Strontium-Titanate (BST) thick film technology. A single unit transistor cell of the powerbar provides an output power of almost 32dBm with 11 dB gain in deep class-AB operation with a maximum efficiency of 30% at 2 GHz. The tunable matching network makes use of varactors based on BST thick film technology with integrated bias decoupling.
{"title":"Tunable RF GaN-power transistor implementing impedance matching networks based on BST thick films","authors":"H. Maune, O. Bengtsson, F. Golden, M. Sazegar, R. Jakoby, W. Heinrich","doi":"10.23919/EUMC.2012.6459076","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459076","url":null,"abstract":"In this paper, a tunable power amplifier is demonstrated based on a GaN-transistor and a matching network based on Barium-Strontium-Titanate (BST) thick film technology. A single unit transistor cell of the powerbar provides an output power of almost 32dBm with 11 dB gain in deep class-AB operation with a maximum efficiency of 30% at 2 GHz. The tunable matching network makes use of varactors based on BST thick film technology with integrated bias decoupling.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127406921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459114
Z. Baghchehsaraei, U. Shah, S. Dudorov, G. Stemme, J. Oberhammer, J. Åberg
This paper presents for the first time a novel concept of a MEMS waveguide switch based on a reconfigurable surface, whose working principle is to short-circuit or to allow for free propagation of the electrical field lines of the TE10 mode of a WR-12 rectangular waveguide. This transmissive surface is only 30 μm thick and consists of up to 1260 reconfiguring cantilevers in the waveguide cross-section, which are moved simultaneously by integrated MEMS comb-drive actuators. For the first fabrication run, the yield of these reconfigurable elements on the chips was 80-86%, which still was good enough for resulting in a measured insertion loss in the open state of better than 1dB and an isolation of better than 20 dB for the best designs, very wideband from 62 to 75 GHz. For 100% fabrication yield, HFSS simulations predict that an insertion loss in the open state of better than 0.1 dB and an isolation of better than 30 dB in the closed state are possible for designs with 800 and more contact points for this novel waveguide switch concept.
{"title":"MEMS 30µm-thick W-band waveguide switch","authors":"Z. Baghchehsaraei, U. Shah, S. Dudorov, G. Stemme, J. Oberhammer, J. Åberg","doi":"10.23919/EUMC.2012.6459114","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459114","url":null,"abstract":"This paper presents for the first time a novel concept of a MEMS waveguide switch based on a reconfigurable surface, whose working principle is to short-circuit or to allow for free propagation of the electrical field lines of the TE10 mode of a WR-12 rectangular waveguide. This transmissive surface is only 30 μm thick and consists of up to 1260 reconfiguring cantilevers in the waveguide cross-section, which are moved simultaneously by integrated MEMS comb-drive actuators. For the first fabrication run, the yield of these reconfigurable elements on the chips was 80-86%, which still was good enough for resulting in a measured insertion loss in the open state of better than 1dB and an isolation of better than 20 dB for the best designs, very wideband from 62 to 75 GHz. For 100% fabrication yield, HFSS simulations predict that an insertion loss in the open state of better than 0.1 dB and an isolation of better than 30 dB in the closed state are possible for designs with 800 and more contact points for this novel waveguide switch concept.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124092266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459168
A. Schiessl, R. Juenemann, L. Schmidt
Active millimeter-wave imaging systems are increasingly utilized in security, medical and industrial applications. At E-Band frequencies, such systems integrate more than three thousand antennas on 2 m × 1 m aperture. Commercial success of those systems requires cost efficient but precise manufacturing technologies to build highly integrated modular mm-wave front ends. Here, a module for a new sparse imaging array architecture is presented. The module is manufactured using a unique mm-wave chip-on-board technology. It operates from 70 GHz to 80 GHz, and integrates 48 MMICs and several thin film ceramic components.
{"title":"RX-TX analog front-end module with 2 × 96-channels for mm-wave imaging systems","authors":"A. Schiessl, R. Juenemann, L. Schmidt","doi":"10.23919/EUMC.2012.6459168","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459168","url":null,"abstract":"Active millimeter-wave imaging systems are increasingly utilized in security, medical and industrial applications. At E-Band frequencies, such systems integrate more than three thousand antennas on 2 m × 1 m aperture. Commercial success of those systems requires cost efficient but precise manufacturing technologies to build highly integrated modular mm-wave front ends. Here, a module for a new sparse imaging array architecture is presented. The module is manufactured using a unique mm-wave chip-on-board technology. It operates from 70 GHz to 80 GHz, and integrates 48 MMICs and several thin film ceramic components.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130852261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459172
S. A. Figur, E. Meniconi, U. Prechtel, V. Ziegler, B. Schoenlinner, R. Sorrentino, L. Vietzorreck
This paper presents the design and measurements of a simplified design approach for a 16 × 8 switch matrix based on Radio Frequency Microelectromechanical System (RF MEMS) switches. The operational frequency range is between 25.5 GHz and 26.5 GHz for data links between a Geostationary Earth Orbit (GEO) relay satellite and several Low Earth Orbit (LEO) satellites. The switch matrix implements a key functionality for tracking the incident signals of the LEO satellites on the receive feed antenna array of the GEO satellite's reflector antenna. A maximum insertion loss of 8.5 dB, isolation of higher than 45 dB and a minimum return loss of 18 dB have been measured.
{"title":"Design and characterization of a simplified planar 16×8 RF MEMS switch matrix for a GEO-stationary data relay","authors":"S. A. Figur, E. Meniconi, U. Prechtel, V. Ziegler, B. Schoenlinner, R. Sorrentino, L. Vietzorreck","doi":"10.23919/EUMC.2012.6459172","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459172","url":null,"abstract":"This paper presents the design and measurements of a simplified design approach for a 16 × 8 switch matrix based on Radio Frequency Microelectromechanical System (RF MEMS) switches. The operational frequency range is between 25.5 GHz and 26.5 GHz for data links between a Geostationary Earth Orbit (GEO) relay satellite and several Low Earth Orbit (LEO) satellites. The switch matrix implements a key functionality for tracking the incident signals of the LEO satellites on the receive feed antenna array of the GEO satellite's reflector antenna. A maximum insertion loss of 8.5 dB, isolation of higher than 45 dB and a minimum return loss of 18 dB have been measured.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134531747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459274
T. Jensen, T. Kraemer, T. Al-Sawaf, V. Krozer, W. Heinrich, G. Trankle
This paper reports results on a transferred-substrate InP heterojunction bipolar-transistor technology for high-frequency power stages. The basic building block is a 2-finger transistor with fT and fmax values of 376 GHz and 385 GHz, respectively, at an emitter size of 0.8 × 5 μm2. The transistors demonstrate more than 7 dB of gain at 96 GHz with good power densities of better than 3.7 mW/μm2. For a 4-finger transistor, fT and fmax reduce to 302/325 GHz while doubling the power. W-band amplifiers based on a single 2-finger transistor have reached a saturated output power of 14.8 dBm at 77 GHz with more than 10 dB return loss on input and output. The results confirm that the transistors are suitable for compact circuit design with minimum inter-stage matching.
{"title":"Multifinger InP HBT's in Transferred-Substrate technology for 100 GHz power amplifiers","authors":"T. Jensen, T. Kraemer, T. Al-Sawaf, V. Krozer, W. Heinrich, G. Trankle","doi":"10.23919/EUMC.2012.6459274","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459274","url":null,"abstract":"This paper reports results on a transferred-substrate InP heterojunction bipolar-transistor technology for high-frequency power stages. The basic building block is a 2-finger transistor with f<sub>T</sub> and f<sub>max</sub> values of 376 GHz and 385 GHz, respectively, at an emitter size of 0.8 × 5 μm<sup>2</sup>. The transistors demonstrate more than 7 dB of gain at 96 GHz with good power densities of better than 3.7 mW/μm<sup>2</sup>. For a 4-finger transistor, f<sub>T</sub> and f<sub>max</sub> reduce to 302/325 GHz while doubling the power. W-band amplifiers based on a single 2-finger transistor have reached a saturated output power of 14.8 dBm at 77 GHz with more than 10 dB return loss on input and output. The results confirm that the transistors are suitable for compact circuit design with minimum inter-stage matching.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"19 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133650644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459209
T. Klein, M. Faassen, R. Kulke, C. Rusch
The precise measurement of distances is a common task in industrial processes, which is addressed by a number of sensor solutions available on the market. There are applications, where the environmental conditions prohibit or complicate the use of standard solutions like optical or capacitive sensing, but radar systems are an option. In this paper, a 77 GHz radar frontend is presented, that is capable of measuring targets in a small distance of a few centimeters with a precision in the ten micrometer scale. The paper's focus are the technological aspects of the system integration and design.
{"title":"A 77 GHz radar frontend in LTCC for small range, high precision industrial applications","authors":"T. Klein, M. Faassen, R. Kulke, C. Rusch","doi":"10.23919/EUMC.2012.6459209","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459209","url":null,"abstract":"The precise measurement of distances is a common task in industrial processes, which is addressed by a number of sensor solutions available on the market. There are applications, where the environmental conditions prohibit or complicate the use of standard solutions like optical or capacitive sensing, but radar systems are an option. In this paper, a 77 GHz radar frontend is presented, that is capable of measuring targets in a small distance of a few centimeters with a precision in the ten micrometer scale. The paper's focus are the technological aspects of the system integration and design.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126033057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459137
J. Moon, P. Saad, Junghwan Son, C. Fager, Bumman Kim
A two-dimensional enhanced Hammerstein (2-D EH) behavior model is proposed for accurate behavioral modeling capability of concurrent dual-band power amplifiers (PAs). The proposed model is based on the two-box modeling technique to alleviate the number of coefficient used in the model. Compared to the two-dimensional memory polynomial (2-D MP) model, the proposed model requires less coefficient, while maintaining the similar modeling performance, because the static nonlinearity and dynamic behavior are separately estimated. The modeling performances of the models are accessed in terms of the normalized mean square error and adjacent channel error power ratio. Moreover, the linearization capabilities of the models are compared by compensating the nonlinearities of the concurrent dual-band PA. In the experiment, the PA is excited by two wideband code division multiple access 1-FA signals at 1.8 GHz and 2.411 GHz. The modeling assessment and linearization performance clearly show that the proposed 2-D EH outperforms the 2-D MP.
{"title":"2-D enhanced Hammerstein behavior model for concurrent dual-band power amplifiers","authors":"J. Moon, P. Saad, Junghwan Son, C. Fager, Bumman Kim","doi":"10.23919/EUMC.2012.6459137","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459137","url":null,"abstract":"A two-dimensional enhanced Hammerstein (2-D EH) behavior model is proposed for accurate behavioral modeling capability of concurrent dual-band power amplifiers (PAs). The proposed model is based on the two-box modeling technique to alleviate the number of coefficient used in the model. Compared to the two-dimensional memory polynomial (2-D MP) model, the proposed model requires less coefficient, while maintaining the similar modeling performance, because the static nonlinearity and dynamic behavior are separately estimated. The modeling performances of the models are accessed in terms of the normalized mean square error and adjacent channel error power ratio. Moreover, the linearization capabilities of the models are compared by compensating the nonlinearities of the concurrent dual-band PA. In the experiment, the PA is excited by two wideband code division multiple access 1-FA signals at 1.8 GHz and 2.411 GHz. The modeling assessment and linearization performance clearly show that the proposed 2-D EH outperforms the 2-D MP.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134128054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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