In this study, the effect of the annealing treatment on electrochemical behavior and the oxide barrier-film thickness of anodized aluminum-magnesium (Al-Mg) alloy was investigated. Electrochemical parameters such as the polarization resistance (RP), solution resistance (RSol), alternating current impedance (Z), and the double layer capacitance (CdL) of the anodized Al-Mg alloy were determined in sulfuric acid solutions ranged from 0-10% H2SO4 by electrochemical impedance spectroscopy (EIS) methods. Then, the oxide film thickness of the anodized Al-Mg alloy was determined from the obtained electrochemical parameters as a function of the sulfuric acid concentration (0-10% H2SO4), in the as received sample and annealed sample conditions. The optimum thickness of the oxide film was determined for the as received samples (4.2nm) and for the annealed samples (0.63nm) in sulfuric acid concentrations of 4% and 2% H2SO4, respectively. The reason behind the oxide film thickness of the as received samples is greater than the one for the annealed samples, because the former samples are thermodynamically unstable (more chemically active) as compared to the annealed samples. A mathematical model was developed to interpret the mechanism of the oxide film build up on the aluminum substrate. The mathematical model of the oxide film build up on the aluminum substrate was proposed for the next challenge of the present work.
{"title":"Determination of oxide barrier-film thickness of anodized aluminum by electrochemical impedance spectroscopy at the nanometer scale","authors":"K. Habib","doi":"10.1117/12.861960","DOIUrl":"https://doi.org/10.1117/12.861960","url":null,"abstract":"In this study, the effect of the annealing treatment on electrochemical behavior and the oxide barrier-film thickness of anodized aluminum-magnesium (Al-Mg) alloy was investigated. Electrochemical parameters such as the polarization resistance (RP), solution resistance (RSol), alternating current impedance (Z), and the double layer capacitance (CdL) of the anodized Al-Mg alloy were determined in sulfuric acid solutions ranged from 0-10% H2SO4 by electrochemical impedance spectroscopy (EIS) methods. Then, the oxide film thickness of the anodized Al-Mg alloy was determined from the obtained electrochemical parameters as a function of the sulfuric acid concentration (0-10% H2SO4), in the as received sample and annealed sample conditions. The optimum thickness of the oxide film was determined for the as received samples (4.2nm) and for the annealed samples (0.63nm) in sulfuric acid concentrations of 4% and 2% H2SO4, respectively. The reason behind the oxide film thickness of the as received samples is greater than the one for the annealed samples, because the former samples are thermodynamically unstable (more chemically active) as compared to the annealed samples. A mathematical model was developed to interpret the mechanism of the oxide film build up on the aluminum substrate. The mathematical model of the oxide film build up on the aluminum substrate was proposed for the next challenge of the present work.","PeriodicalId":245973,"journal":{"name":"Southeast Asian International Advances in Micro/Nano-technology","volume":"7743 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130855411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Vital signals of patients, such as heart rate, temperature and movement are crucial to monitor patients in hospital. Current heart rate measurement is obtained by using Electrocardiograph, which normally applies electrodes to the patient's body. As electrodes are extremely uncomfortable to ware and hinder patient's movement, a non-invasive vital signal-monitoring device will be a better solution. Similar to Electrocardiograph, the device detects the voltage difference across the heart by using concept of capacitance, which can be obtained by two conductive fiber sewing on the bed sheet. Simultaneous temperature reading can also be detected by using surface mounted temperature sensor. This paper will mainly focus on the heart rate monitoring.
{"title":"Noninvasive vital signal monitoring","authors":"Zenan Wang, J. Chee, K. P. Chua, Z. Chen","doi":"10.1117/12.862727","DOIUrl":"https://doi.org/10.1117/12.862727","url":null,"abstract":"Vital signals of patients, such as heart rate, temperature and movement are crucial to monitor patients in hospital. Current heart rate measurement is obtained by using Electrocardiograph, which normally applies electrodes to the patient's body. As electrodes are extremely uncomfortable to ware and hinder patient's movement, a non-invasive vital signal-monitoring device will be a better solution. Similar to Electrocardiograph, the device detects the voltage difference across the heart by using concept of capacitance, which can be obtained by two conductive fiber sewing on the bed sheet. Simultaneous temperature reading can also be detected by using surface mounted temperature sensor. This paper will mainly focus on the heart rate monitoring.","PeriodicalId":245973,"journal":{"name":"Southeast Asian International Advances in Micro/Nano-technology","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133692900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A tapered fiber based ring resonator is fabricated and its optical characteristic is investigated. Fiber taper is firstly made by heating and stretching a piece of optical fiber, after the polymer protective cladding has been removed. The ring resonator is fabricated by twisting the tapered fiber and manipulating the two ends of the fiber. The comb filter with a constant spacing and an extinction ratio of 4.2dB can be obtained with the ring resonator. The free spectral range (FSR) of tapered fiber ring resonator can be varied from 0.08nm to 0.33nm by controlling the diameter of the ring. The filtering characteristic of the resonator is maintained after packaging with low index polymer.
{"title":"Fabrication of optical comb filter using tapered fiber based ring resonator","authors":"S. Harun, K. Lim, A. A. Jasim, H. Ahmad","doi":"10.1117/12.862153","DOIUrl":"https://doi.org/10.1117/12.862153","url":null,"abstract":"A tapered fiber based ring resonator is fabricated and its optical characteristic is investigated. Fiber taper is firstly made by heating and stretching a piece of optical fiber, after the polymer protective cladding has been removed. The ring resonator is fabricated by twisting the tapered fiber and manipulating the two ends of the fiber. The comb filter with a constant spacing and an extinction ratio of 4.2dB can be obtained with the ring resonator. The free spectral range (FSR) of tapered fiber ring resonator can be varied from 0.08nm to 0.33nm by controlling the diameter of the ring. The filtering characteristic of the resonator is maintained after packaging with low index polymer.","PeriodicalId":245973,"journal":{"name":"Southeast Asian International Advances in Micro/Nano-technology","volume":"250 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116391371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, simulation technique for single electron transistor (SET) based on master equation is presented. The SET is modeled as a circuit consisting of two tunnel junctions, one non-tunnel junction and two voltage sources of gate voltage and drain voltage. A tunneling electron is described as a discrete charge due to stochastic nature of a tunneling event. Simulated source-drain current versus drain voltage characteristics show the staircase behavior, while source-drain current is a periodic function of the gate voltage. Coulomb diamond region is also found, which means that the SET operation is based on single electron tunneling. These results reproduce the previous studies of the SET, indicating that the simulation technique achieves good accuration. Such simulation method is also useful in the application of single electron turnstile, single electron pump and the other more complex multiple tunnel junction circuits.
{"title":"Numerical simulation of single electron transistor using master equation","authors":"R. Nuryadi, A. Haryono","doi":"10.1117/12.862848","DOIUrl":"https://doi.org/10.1117/12.862848","url":null,"abstract":"In this work, simulation technique for single electron transistor (SET) based on master equation is presented. The SET is modeled as a circuit consisting of two tunnel junctions, one non-tunnel junction and two voltage sources of gate voltage and drain voltage. A tunneling electron is described as a discrete charge due to stochastic nature of a tunneling event. Simulated source-drain current versus drain voltage characteristics show the staircase behavior, while source-drain current is a periodic function of the gate voltage. Coulomb diamond region is also found, which means that the SET operation is based on single electron tunneling. These results reproduce the previous studies of the SET, indicating that the simulation technique achieves good accuration. Such simulation method is also useful in the application of single electron turnstile, single electron pump and the other more complex multiple tunnel junction circuits.","PeriodicalId":245973,"journal":{"name":"Southeast Asian International Advances in Micro/Nano-technology","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130190133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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