{"title":"Influence of Resident Time and Proportion of Reactive Gas on the Growth of Diamond Films","authors":"N. Deng, Changchun Zhu","doi":"10.1177/152451102028017","DOIUrl":"https://doi.org/10.1177/152451102028017","url":null,"abstract":"","PeriodicalId":246239,"journal":{"name":"Journal of Wide Bandgap Materials","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132566119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Biocompatibility of NCD","authors":"K. Bąkowicz, S. Mitura","doi":"10.1106/152451102024429","DOIUrl":"https://doi.org/10.1106/152451102024429","url":null,"abstract":"","PeriodicalId":246239,"journal":{"name":"Journal of Wide Bandgap Materials","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122648469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. GusevaMalvina, G. BabaevVladimir, N. D. Novikov, A. Alexandrov, V. V. Khvostov, N. Savchenko, N. Bystrova
{"title":"New Carbon Materials for Medical and Ecological Applications","authors":"B. GusevaMalvina, G. BabaevVladimir, N. D. Novikov, A. Alexandrov, V. V. Khvostov, N. Savchenko, N. Bystrova","doi":"10.1106/152451102024430","DOIUrl":"https://doi.org/10.1106/152451102024430","url":null,"abstract":"","PeriodicalId":246239,"journal":{"name":"Journal of Wide Bandgap Materials","volume":"224 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124448652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Amorphous Hydrogenated Silicon-Nitrogen (a-Si1-xNx: H) Films Deposited by PECVD","authors":"S. Jonas, T. Stapiński, E. Walasek, M. Chrabąszcz","doi":"10.1106/152451102025832","DOIUrl":"https://doi.org/10.1106/152451102025832","url":null,"abstract":"","PeriodicalId":246239,"journal":{"name":"Journal of Wide Bandgap Materials","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124076783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. Dusiński, J. Szmidt, K. Zdunek, M. Elert, A. Barcz
{"title":"Al2O3 Layers for Microelectronics Applications","authors":"E. Dusiński, J. Szmidt, K. Zdunek, M. Elert, A. Barcz","doi":"10.1106/152451102025838","DOIUrl":"https://doi.org/10.1106/152451102025838","url":null,"abstract":"","PeriodicalId":246239,"journal":{"name":"Journal of Wide Bandgap Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114743632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
I. Dobrinets, A. Wieck, A. Zaitsev, T. Etzel, J. Butler
{"title":"Electrical Properties of Diamond Irradiated with Focussed Ion Beam","authors":"I. Dobrinets, A. Wieck, A. Zaitsev, T. Etzel, J. Butler","doi":"10.1106/152451102025826","DOIUrl":"https://doi.org/10.1106/152451102025826","url":null,"abstract":"","PeriodicalId":246239,"journal":{"name":"Journal of Wide Bandgap Materials","volume":"409 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121814597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. In this work results of electrical characterization of plasma-synthesized thin nanocrystalline c-BN films, deposited on Si p-type and n-type substrates, are presented, based on capacitance-voltage and current-voltage measurements of MIS Al/BN/Si structures. Results are also shown of structural investigations of the layers (SEM images). Finally, we will demonstrate the possibility of selective dry RF plasma etching of BN layers using various gas mixtures, which is a continuation of our earlier efforts.
{"title":"Electric characterization and plasma processing of nanocrystalline c-BN layers","authors":"A. Werbowy, P. Firek, J. Szmidt, A. Olszyna","doi":"10.1109/WBL.2001.946587","DOIUrl":"https://doi.org/10.1109/WBL.2001.946587","url":null,"abstract":"Summary form only given. In this work results of electrical characterization of plasma-synthesized thin nanocrystalline c-BN films, deposited on Si p-type and n-type substrates, are presented, based on capacitance-voltage and current-voltage measurements of MIS Al/BN/Si structures. Results are also shown of structural investigations of the layers (SEM images). Finally, we will demonstrate the possibility of selective dry RF plasma etching of BN layers using various gas mixtures, which is a continuation of our earlier efforts.","PeriodicalId":246239,"journal":{"name":"Journal of Wide Bandgap Materials","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114987575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Klimczak, J. Szmidt, A. Olszyna, M. Bakowski, A. Barcz
Summary form only given. AlN films were deposited on silicon carbide wafers by RPP (Reactive Pulse Plasma) method. Basic properties of the AlN layers and AlN-SiC interface have been investigated. We have extracted electrical properties from current-voltage characteristics, investigated surface structure by scanning electron microscopy (SEM), chemical composition of AlN layers by secondary ion mass spectroscopy (SIMS) and layer thickness by spectroscopic ellipsometry measurements.
{"title":"Basic properties of AlN layers deposited onto SiC","authors":"K. Klimczak, J. Szmidt, A. Olszyna, M. Bakowski, A. Barcz","doi":"10.1109/WBL.2001.946583","DOIUrl":"https://doi.org/10.1109/WBL.2001.946583","url":null,"abstract":"Summary form only given. AlN films were deposited on silicon carbide wafers by RPP (Reactive Pulse Plasma) method. Basic properties of the AlN layers and AlN-SiC interface have been investigated. We have extracted electrical properties from current-voltage characteristics, investigated surface structure by scanning electron microscopy (SEM), chemical composition of AlN layers by secondary ion mass spectroscopy (SIMS) and layer thickness by spectroscopic ellipsometry measurements.","PeriodicalId":246239,"journal":{"name":"Journal of Wide Bandgap Materials","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124104776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. Results of research on the electric properties of Ni contacts on n-type 4H-SiC are presented. The forward and reverse I-V measurements of Ni/4H-SiC Schottky rectifiers are demonstrated. The studies showed degradation of the structures over time. The lack of passivation probably caused the increase of leakage current. The scatter of Schottky diode parameters like the ideality factor, the saturation current density, the series resistance and the Schottky barrier height were studied. The Schottky barrier height was calculated from I-V characteristics measured at room temperature.
{"title":"Current-voltage characteristics of 4H-SiC diodes with Ni contacts","authors":"M. Sochacki, M. Bakowski, J. Szmidt, A. Werbowy","doi":"10.1109/WBL.2001.946604","DOIUrl":"https://doi.org/10.1109/WBL.2001.946604","url":null,"abstract":"Summary form only given. Results of research on the electric properties of Ni contacts on n-type 4H-SiC are presented. The forward and reverse I-V measurements of Ni/4H-SiC Schottky rectifiers are demonstrated. The studies showed degradation of the structures over time. The lack of passivation probably caused the increase of leakage current. The scatter of Schottky diode parameters like the ideality factor, the saturation current density, the series resistance and the Schottky barrier height were studied. The Schottky barrier height was calculated from I-V characteristics measured at room temperature.","PeriodicalId":246239,"journal":{"name":"Journal of Wide Bandgap Materials","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123679397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. The purpose of this study was the tribological analysis of modulated TiC/VC coatings deposited by an indirect method on M2 high speed steel. The fretting test under gross slip condition has been applied allowing the calculation of friction coefficients and wear resistance. The results of the test were used for quantification of fretting damage using a recent energy approach to the fretting wear.
{"title":"Kinetics of fretting wear of TiC/VC coatings on M2 HSS steel","authors":"M. Dudek, S. Fouvry, B. Wendler, F. Kapsa","doi":"10.1109/WBL.2001.946578","DOIUrl":"https://doi.org/10.1109/WBL.2001.946578","url":null,"abstract":"Summary form only given. The purpose of this study was the tribological analysis of modulated TiC/VC coatings deposited by an indirect method on M2 high speed steel. The fretting test under gross slip condition has been applied allowing the calculation of friction coefficients and wear resistance. The results of the test were used for quantification of fretting damage using a recent energy approach to the fretting wear.","PeriodicalId":246239,"journal":{"name":"Journal of Wide Bandgap Materials","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130830546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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