P. Śniecikowski, J. Szmidt, M.T.H. Aung, P. Niedzielski, M. Bakowski
Summary form only given. We report a parametric investigation of the etching of 4H-SiC bulk wafers and thin diamond like carbon (DLC) layers on the SiC substrates. The 4H-SiC samples were bulk substrates doped with N, and an amorphous DLC layer (/spl sim/500A thick) was deposited on the same SiC substrate by reactive pulse plasma assisted method. The reactive ion etching (RIE) method and fluorine containing plasma (CF/sub 4/) were employed and Ar and O/sub 2/ were used as a gas additive.
{"title":"Dry etching of bulk 4H-SiC and DLC/SiC structure","authors":"P. Śniecikowski, J. Szmidt, M.T.H. Aung, P. Niedzielski, M. Bakowski","doi":"10.1109/WBL.2001.946585","DOIUrl":"https://doi.org/10.1109/WBL.2001.946585","url":null,"abstract":"Summary form only given. We report a parametric investigation of the etching of 4H-SiC bulk wafers and thin diamond like carbon (DLC) layers on the SiC substrates. The 4H-SiC samples were bulk substrates doped with N, and an amorphous DLC layer (/spl sim/500A thick) was deposited on the same SiC substrate by reactive pulse plasma assisted method. The reactive ion etching (RIE) method and fluorine containing plasma (CF/sub 4/) were employed and Ar and O/sub 2/ were used as a gas additive.","PeriodicalId":246239,"journal":{"name":"Journal of Wide Bandgap Materials","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126485654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Pełka, G. Ostrowski, D. Stróż, P. Niedzielski, H. Morawiec, A. Sysa, S. Mitura
Summary form only given. The shape memory NiTi- and Cu-based alloys constitute two groups of functional materials for which medical and industrial applications have been developed in the last two decades. This is due to their unique properties i.e. one and two-way shape memory and pseudoelasticity effects. In particular NiTi alloys have found wide application in medicine. The development of carbon ductile coatings for shape memory alloys with the aim of improving the alloy biocompatibility, wear and corrosion resistance is the subject of this paper.
{"title":"Carbon coatings onto shape memory alloys","authors":"A. Pełka, G. Ostrowski, D. Stróż, P. Niedzielski, H. Morawiec, A. Sysa, S. Mitura","doi":"10.1109/WBL.2001.946589","DOIUrl":"https://doi.org/10.1109/WBL.2001.946589","url":null,"abstract":"Summary form only given. The shape memory NiTi- and Cu-based alloys constitute two groups of functional materials for which medical and industrial applications have been developed in the last two decades. This is due to their unique properties i.e. one and two-way shape memory and pseudoelasticity effects. In particular NiTi alloys have found wide application in medicine. The development of carbon ductile coatings for shape memory alloys with the aim of improving the alloy biocompatibility, wear and corrosion resistance is the subject of this paper.","PeriodicalId":246239,"journal":{"name":"Journal of Wide Bandgap Materials","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122911126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. The market for biocompatibility materials and structures is growing steadily. Among these materials there are carbon layers, especially nanocrystalline (NCD) and diamond like carbon (DLQ) layers that are being increasingly investigated. These layers can act as biocompatible coatings as well as sensitive organic polar compounds. The layers under study were obtained on silicon substrate through low pressure plasma CVD methods. The layers were defined with the use of C-V and I-V characteristics. AFM and SEM methods were used to study the layer structure. An ellipsometric study was also conducted. This research allowed the authors to ascertain the fact that DLC and NDC layers act as dielectrics while their properties are very much dependent on the state of the layer-metal contacts. The impact of the environment for Al electrodes on the electrophysical parameters of DLC and NDC layers was also examined.
{"title":"Dielectric properties of DLC films in sensor applications","authors":"T. Guzdek, J. Szmidt, M. Clapa, S. Mitura","doi":"10.1109/WBL.2001.946601","DOIUrl":"https://doi.org/10.1109/WBL.2001.946601","url":null,"abstract":"Summary form only given. The market for biocompatibility materials and structures is growing steadily. Among these materials there are carbon layers, especially nanocrystalline (NCD) and diamond like carbon (DLQ) layers that are being increasingly investigated. These layers can act as biocompatible coatings as well as sensitive organic polar compounds. The layers under study were obtained on silicon substrate through low pressure plasma CVD methods. The layers were defined with the use of C-V and I-V characteristics. AFM and SEM methods were used to study the layer structure. An ellipsometric study was also conducted. This research allowed the authors to ascertain the fact that DLC and NDC layers act as dielectrics while their properties are very much dependent on the state of the layer-metal contacts. The impact of the environment for Al electrodes on the electrophysical parameters of DLC and NDC layers was also examined.","PeriodicalId":246239,"journal":{"name":"Journal of Wide Bandgap Materials","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122920474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. In this work we report the reactive ion etching (RIE) of GaN using CF/sub 4//Ar and CHF/sub 3//Ar chemistries. The effects of RF plasma power, pressure and gas flow rates on the etch rate were investigated as well as the interaction of physical and chemical components of the etch process. We used 2.8 /spl mu/m, n-type GaN film, grown on Al/sub 2/O/sub 3/ substrate. It was patterned with evaporated aluminum, which was chemically removed after the etch process.
{"title":"Physical-chemical etching of GaN layers on sapphire","authors":"J. Szmidt, A. Szczęsny, R. B. Beck","doi":"10.1109/WBL.2001.946586","DOIUrl":"https://doi.org/10.1109/WBL.2001.946586","url":null,"abstract":"Summary form only given. In this work we report the reactive ion etching (RIE) of GaN using CF/sub 4//Ar and CHF/sub 3//Ar chemistries. The effects of RF plasma power, pressure and gas flow rates on the etch rate were investigated as well as the interaction of physical and chemical components of the etch process. We used 2.8 /spl mu/m, n-type GaN film, grown on Al/sub 2/O/sub 3/ substrate. It was patterned with evaporated aluminum, which was chemically removed after the etch process.","PeriodicalId":246239,"journal":{"name":"Journal of Wide Bandgap Materials","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124001822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. Results from studies of the fabrication process and emissivity of FEAs of mold-type made of silicon carbide are presented. The gated and non-gated field emission arrays of SiC sharp emitter tips have been produced by the transfer mold technique.
{"title":"SiC field emission arrays","authors":"A. Gorecka-Drzazga","doi":"10.1109/WBL.2001.946599","DOIUrl":"https://doi.org/10.1109/WBL.2001.946599","url":null,"abstract":"Summary form only given. Results from studies of the fabrication process and emissivity of FEAs of mold-type made of silicon carbide are presented. The gated and non-gated field emission arrays of SiC sharp emitter tips have been produced by the transfer mold technique.","PeriodicalId":246239,"journal":{"name":"Journal of Wide Bandgap Materials","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121863347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. The rapid progress in the field of microfluidic devices, among them capillary electrophoresis microchips for DNA sequencing, stimulates a desire to exploit further the possibilities of such devices. Modem DNA sequencers are automated, small and allow very rapid separations (up to seconds). Different detection techniques are applied into the existing systems, among them the most common is fluorescence. However, a novel technique, based on the intrinsic absorption in nucleic acids of ultraviolet (UV) light, will solve a lot of detection problems. With regard to the advantages of the absorption technique, a material to manufacture a DNA sequencer should transmit UV light in the range of 260 nm where nucleic acids absorb strongly. Selection of material is therefore limited to wide band gap materials. Presented here are investigations focused on the optimization of a DNA chip. Different materials such as diamond, sapphire, polymers and quartz are compared with regard to optical and electrical properties, biological and chemical inertness and heat transfer Different phenomena occurring during capillary electrophoretic separations are taken into consideration. The advantages and drawbacks of using different materials are discussed, taking into consideration the technological problems of manufacturing microstructures and economical aspects.
{"title":"Materials for DNA sequencing chip","authors":"A. Karczemska, A. Sokołowska","doi":"10.1109/WBL.2001.946592","DOIUrl":"https://doi.org/10.1109/WBL.2001.946592","url":null,"abstract":"Summary form only given. The rapid progress in the field of microfluidic devices, among them capillary electrophoresis microchips for DNA sequencing, stimulates a desire to exploit further the possibilities of such devices. Modem DNA sequencers are automated, small and allow very rapid separations (up to seconds). Different detection techniques are applied into the existing systems, among them the most common is fluorescence. However, a novel technique, based on the intrinsic absorption in nucleic acids of ultraviolet (UV) light, will solve a lot of detection problems. With regard to the advantages of the absorption technique, a material to manufacture a DNA sequencer should transmit UV light in the range of 260 nm where nucleic acids absorb strongly. Selection of material is therefore limited to wide band gap materials. Presented here are investigations focused on the optimization of a DNA chip. Different materials such as diamond, sapphire, polymers and quartz are compared with regard to optical and electrical properties, biological and chemical inertness and heat transfer Different phenomena occurring during capillary electrophoretic separations are taken into consideration. The advantages and drawbacks of using different materials are discussed, taking into consideration the technological problems of manufacturing microstructures and economical aspects.","PeriodicalId":246239,"journal":{"name":"Journal of Wide Bandgap Materials","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127054651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. A brief overview of wide bandgap materials application in solar cell technology and on the historical development background is presented. Special virtues of semiconductor compounds as the third-generation materials for photovoltaics are discussed. Features of the most advanced materials like CdS/CdTe or CIS structures are described.
{"title":"Wide bandgap materials in modern solar cells technology","authors":"M. Sibínski","doi":"10.1109/WBL.2001.946595","DOIUrl":"https://doi.org/10.1109/WBL.2001.946595","url":null,"abstract":"Summary form only given. A brief overview of wide bandgap materials application in solar cell technology and on the historical development background is presented. Special virtues of semiconductor compounds as the third-generation materials for photovoltaics are discussed. Features of the most advanced materials like CdS/CdTe or CIS structures are described.","PeriodicalId":246239,"journal":{"name":"Journal of Wide Bandgap Materials","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121835641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. Because of optical fibre sensitivity to external factors, cable structure must provide water and mechanical protection. All materials used in cable have to guarantee a minimum 30 years cable lifetime, with no degradation of optical and mechanical parameters. To protect cable against water migration, three dry solutions are introduced. Generally the main changes in cable technology rely on an increase in the quantity of fibres in a cable, and on reductions in the loose buffer tube diameter and the jacket thickness without deterioration of optical and mechanical cable properties. Also the consumption of materials is reduced, with significant lowering of production costs. Results of tensile and temperature tests of optical fibre cables are reported. Positive results for both temperature and tensile tests show that the excess fibre length selected during loose tube extruding and further stranding loose tubes around the central member are correct.
{"title":"Some technological aspects of optical fibres cables production","authors":"Mariusz Ambroziak, M. Wronikowski, K. Zdunek","doi":"10.1109/WBL.2001.946603","DOIUrl":"https://doi.org/10.1109/WBL.2001.946603","url":null,"abstract":"Summary form only given. Because of optical fibre sensitivity to external factors, cable structure must provide water and mechanical protection. All materials used in cable have to guarantee a minimum 30 years cable lifetime, with no degradation of optical and mechanical parameters. To protect cable against water migration, three dry solutions are introduced. Generally the main changes in cable technology rely on an increase in the quantity of fibres in a cable, and on reductions in the loose buffer tube diameter and the jacket thickness without deterioration of optical and mechanical cable properties. Also the consumption of materials is reduced, with significant lowering of production costs. Results of tensile and temperature tests of optical fibre cables are reported. Positive results for both temperature and tensile tests show that the excess fibre length selected during loose tube extruding and further stranding loose tubes around the central member are correct.","PeriodicalId":246239,"journal":{"name":"Journal of Wide Bandgap Materials","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117124153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Paszkiewicz, B. Paszkiewicz, J. Kozlowski, M. Tlaczala
Summary form only given. C-V measurements in a range of frequencies (80 Hz -10 MHz) and appropriate modelling were performed. The C and G versus frequency characteristics of MOVPE-grown nitride epitaxial structures were measured in a range of DC biases and the results were fitted to the model. The distributed elements equivalent circuit model for the series resistance and the Schottky junction admittance was used, allowing study of the carrier concentration distribution over the layer thickness, deep level relaxation phenomena and the determination of other parameters such as layer shunt resistance, resistivity and carrier mobility. The epitaxial layer sheet resistance was also determined by measurement of the complex reflectance coefficient of the scattering matrix performed at 4.5 GHz.
{"title":"Contactless characterisation techniques for verification of (AlGaN/GaN) device heterostuctures quality","authors":"R. Paszkiewicz, B. Paszkiewicz, J. Kozlowski, M. Tlaczala","doi":"10.1109/WBL.2001.946598","DOIUrl":"https://doi.org/10.1109/WBL.2001.946598","url":null,"abstract":"Summary form only given. C-V measurements in a range of frequencies (80 Hz -10 MHz) and appropriate modelling were performed. The C and G versus frequency characteristics of MOVPE-grown nitride epitaxial structures were measured in a range of DC biases and the results were fitted to the model. The distributed elements equivalent circuit model for the series resistance and the Schottky junction admittance was used, allowing study of the carrier concentration distribution over the layer thickness, deep level relaxation phenomena and the determination of other parameters such as layer shunt resistance, resistivity and carrier mobility. The epitaxial layer sheet resistance was also determined by measurement of the complex reflectance coefficient of the scattering matrix performed at 4.5 GHz.","PeriodicalId":246239,"journal":{"name":"Journal of Wide Bandgap Materials","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130122289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. The authors report on the technology of GaN synthesis which is based on reactive ion sputtering from a Ga target in a nitrogen atmosphere. This process is carried out at room temperature and in low pressure conditions.
{"title":"Synthesis of GaN by reactive sputtering at low temperature","authors":"A. Jagoda, L. Dobrzański, B. Stańczyk","doi":"10.1109/WBL.2001.946557","DOIUrl":"https://doi.org/10.1109/WBL.2001.946557","url":null,"abstract":"Summary form only given. The authors report on the technology of GaN synthesis which is based on reactive ion sputtering from a Ga target in a nitrogen atmosphere. This process is carried out at room temperature and in low pressure conditions.","PeriodicalId":246239,"journal":{"name":"Journal of Wide Bandgap Materials","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121394018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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