Pub Date : 2007-07-08DOI: 10.1109/STYSW.2007.4559130
A. Szyszka, B. Paszkiewicz, R. Paszkiewicz, M. Tlaczala
The influence of potential barriers formed at grain boundaries in heteroepitaxial nitrides layers on MSM (metal-semiconductor-metal) detector performance was simulated. Three types of structures: without deep traps, with point deep traps and with deep traps located in grain boundary (GB) were examined and compared. The time response characteristics of structures have been characterized.
{"title":"Simulation of the influence of grain structure of heteroepitaxial nitrides layers on the performance of MSM detector","authors":"A. Szyszka, B. Paszkiewicz, R. Paszkiewicz, M. Tlaczala","doi":"10.1109/STYSW.2007.4559130","DOIUrl":"https://doi.org/10.1109/STYSW.2007.4559130","url":null,"abstract":"The influence of potential barriers formed at grain boundaries in heteroepitaxial nitrides layers on MSM (metal-semiconductor-metal) detector performance was simulated. Three types of structures: without deep traps, with point deep traps and with deep traps located in grain boundary (GB) were examined and compared. The time response characteristics of structures have been characterized.","PeriodicalId":256930,"journal":{"name":"2007 International Students and Young Scientists Workshop on Photonics and Microsystems","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126297997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-07-08DOI: 10.1109/STYSW.2007.4559122
P. Psuja, L. Marciniak, D. Hreniak, W. Stręk
In the first step silica submicron particles were prepared by the sol-gel method. Then obtained cores were occluded with a precursor of terbium doped yttrium aluminum garnet (YAG). The same procedure was repeated for europium doped tin dioxide. The morphology and structure of obtained shell materials were determined by powder X-ray diffraction (XRD) and transmission electro-microscopy (TEM) analyses. Luminescent properties of obtained structures were determined. Possible applications of presented materials are discussed.
{"title":"Fabrication and optical properties of selected coreshell structures with nanocrystalline rare-earth doped phosphors coated with SiO2 submicron particles","authors":"P. Psuja, L. Marciniak, D. Hreniak, W. Stręk","doi":"10.1109/STYSW.2007.4559122","DOIUrl":"https://doi.org/10.1109/STYSW.2007.4559122","url":null,"abstract":"In the first step silica submicron particles were prepared by the sol-gel method. Then obtained cores were occluded with a precursor of terbium doped yttrium aluminum garnet (YAG). The same procedure was repeated for europium doped tin dioxide. The morphology and structure of obtained shell materials were determined by powder X-ray diffraction (XRD) and transmission electro-microscopy (TEM) analyses. Luminescent properties of obtained structures were determined. Possible applications of presented materials are discussed.","PeriodicalId":256930,"journal":{"name":"2007 International Students and Young Scientists Workshop on Photonics and Microsystems","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127226789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-07-08DOI: 10.1109/STYSW.2007.4559126
J. Prażmowska, A. Szyszka, J. Serafińczuk, A. Podhorodecki, R. Korbutowicz, R. Paszkiewicz, J. Misiewicz, M. Tlaczala
High temperature gallium nitride (HT-GaN) layers were grown by HVPE (hydride vapor phase epitaxy) method on low temperature GaN (LT-GaN) buffer layers deposited by HVPE or MOVPE method and on double MOVPE LT-GaN/AIN buffers. The (0001) sapphire substrates were applied. The HCl flow rate and deposition time intervals of nucleation layer deposition were varied in the range of 8-10 ml/min and 5-9 min (with step of 2 min) respectively. The nucleation layer was preceded by pre-heating of the substrate and followed by recrystallization process. Both processes were carried out in NH3 ambient for 10 min. The main goal of this work was to study the influence of the initial stage of deposition process on the properties of subsequent HVPE HT-GaN layer. Morphology of LT buffer layers and HT-GaN layers were examined by scanning electron microscopy. The optical quality of thick HVPE HT-GaN layers was evaluated by the measurement of photoluminescence spectra. The X-Ray measurements (2thetas/omega, omega-002 reflection scans and reciprocal lattice maps) were performed to study the crystallographic quality of HT-GaN layers.
{"title":"Impact of the initial stage of deposition conditions on the properties of subsequent GaN Layer","authors":"J. Prażmowska, A. Szyszka, J. Serafińczuk, A. Podhorodecki, R. Korbutowicz, R. Paszkiewicz, J. Misiewicz, M. Tlaczala","doi":"10.1109/STYSW.2007.4559126","DOIUrl":"https://doi.org/10.1109/STYSW.2007.4559126","url":null,"abstract":"High temperature gallium nitride (HT-GaN) layers were grown by HVPE (hydride vapor phase epitaxy) method on low temperature GaN (LT-GaN) buffer layers deposited by HVPE or MOVPE method and on double MOVPE LT-GaN/AIN buffers. The (0001) sapphire substrates were applied. The HCl flow rate and deposition time intervals of nucleation layer deposition were varied in the range of 8-10 ml/min and 5-9 min (with step of 2 min) respectively. The nucleation layer was preceded by pre-heating of the substrate and followed by recrystallization process. Both processes were carried out in NH3 ambient for 10 min. The main goal of this work was to study the influence of the initial stage of deposition process on the properties of subsequent HVPE HT-GaN layer. Morphology of LT buffer layers and HT-GaN layers were examined by scanning electron microscopy. The optical quality of thick HVPE HT-GaN layers was evaluated by the measurement of photoluminescence spectra. The X-Ray measurements (2thetas/omega, omega-002 reflection scans and reciprocal lattice maps) were performed to study the crystallographic quality of HT-GaN layers.","PeriodicalId":256930,"journal":{"name":"2007 International Students and Young Scientists Workshop on Photonics and Microsystems","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125968620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-07-08DOI: 10.1109/STYSW.2007.4559118
M. Haupt, U. Fischer
POFs (polymer optical fibers) replace traditional communication media such as copper and glass step by step within short distance communication systems, mostly because of their cost-effectiveness and easy handling. POFs are used in various fields of optical communication, e.g. the automotive sector or in-house communication. The current "state of the art" are single mode communication systems. These systems use only one wavelength for communication, which limits the bandwidth. For future scenarios, this traditional technology is the bottleneck of bandwidth, e.g. for HDTV with IP-TV. One solution to surpass this limitation is to use more than one wavelength over one single fiber, a technique known as WDM (wavelength division multiplexing). This multiplexing technology requires two more technical key- elements: a multiplexer, which combines the multi- wavelengths signals into one fiber and a demultiplexer at the end of the network to separate the colored signals. This paper will show computer simulation of the design of several demux/mux-element patterns. The main idea is to split and combine the different wavelengths by means of a grating on an aspheric mirror. The following realization of this key element will be done with injection molding. This technology offers easy and very economical processing. These advantages make this technology first choice for optical components in the low-cost array.
{"title":"Design and development of a mux/demux element for WDM over POF","authors":"M. Haupt, U. Fischer","doi":"10.1109/STYSW.2007.4559118","DOIUrl":"https://doi.org/10.1109/STYSW.2007.4559118","url":null,"abstract":"POFs (polymer optical fibers) replace traditional communication media such as copper and glass step by step within short distance communication systems, mostly because of their cost-effectiveness and easy handling. POFs are used in various fields of optical communication, e.g. the automotive sector or in-house communication. The current \"state of the art\" are single mode communication systems. These systems use only one wavelength for communication, which limits the bandwidth. For future scenarios, this traditional technology is the bottleneck of bandwidth, e.g. for HDTV with IP-TV. One solution to surpass this limitation is to use more than one wavelength over one single fiber, a technique known as WDM (wavelength division multiplexing). This multiplexing technology requires two more technical key- elements: a multiplexer, which combines the multi- wavelengths signals into one fiber and a demultiplexer at the end of the network to separate the colored signals. This paper will show computer simulation of the design of several demux/mux-element patterns. The main idea is to split and combine the different wavelengths by means of a grating on an aspheric mirror. The following realization of this key element will be done with injection molding. This technology offers easy and very economical processing. These advantages make this technology first choice for optical components in the low-cost array.","PeriodicalId":256930,"journal":{"name":"2007 International Students and Young Scientists Workshop on Photonics and Microsystems","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114117876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-07-08DOI: 10.1109/STYSW.2007.4559116
M. Fornalczyk, A. Budnicki, K. Abramski
The phase synchronization (phase-locking) of two lasers occurs in generating the same frequency (they can differ only in phase). The phase-locking effect can by forced by mutual radiation coupling between lasers. We investigated experimentally that phenomenon in two erbium doped ring fibre lasers. They were strongly coupled by using a 50/50 fibre coupler. Both lasers had the same resonator lengths in order to keep their free spectral ranges equal. The phase-locking state was diagnosed by observing the spectrum of the beat signals. Using a tuneable fibre Bragg grating, the locking range was investigated. One laser operated at 1551.91 nm, the second one was tuned around. Due to frequency pulling effect, the common frequency of both synchronized lasers changed from 1551.26 to 1552.22 nm. That locking range was about 225 GHz (1.8 nm). Although the lasers are not single-frequency ones, we showed, that proper designing, careful alignment and phase control, can give effective phase-locking effect.
{"title":"Phase-locking of two coupled EDF ring lasers","authors":"M. Fornalczyk, A. Budnicki, K. Abramski","doi":"10.1109/STYSW.2007.4559116","DOIUrl":"https://doi.org/10.1109/STYSW.2007.4559116","url":null,"abstract":"The phase synchronization (phase-locking) of two lasers occurs in generating the same frequency (they can differ only in phase). The phase-locking effect can by forced by mutual radiation coupling between lasers. We investigated experimentally that phenomenon in two erbium doped ring fibre lasers. They were strongly coupled by using a 50/50 fibre coupler. Both lasers had the same resonator lengths in order to keep their free spectral ranges equal. The phase-locking state was diagnosed by observing the spectrum of the beat signals. Using a tuneable fibre Bragg grating, the locking range was investigated. One laser operated at 1551.91 nm, the second one was tuned around. Due to frequency pulling effect, the common frequency of both synchronized lasers changed from 1551.26 to 1552.22 nm. That locking range was about 225 GHz (1.8 nm). Although the lasers are not single-frequency ones, we showed, that proper designing, careful alignment and phase control, can give effective phase-locking effect.","PeriodicalId":256930,"journal":{"name":"2007 International Students and Young Scientists Workshop on Photonics and Microsystems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129923324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-07-08DOI: 10.1109/STYSW.2007.4559125
M. Nikodem, G. Tomczyk, A. Budnicki, K. Abramski
Passively mode-locked erbium doped fiber ring laser is investigated. We present laser configuration where nonlinear polarization rotation is used for modes synchronization. More than 32 nm output spectrum was obtained. Pulses repetition frequency stability and its temperature dependence is discussed and measured.
{"title":"Repetition frequency stability in passively mode-locked fiber ring laser","authors":"M. Nikodem, G. Tomczyk, A. Budnicki, K. Abramski","doi":"10.1109/STYSW.2007.4559125","DOIUrl":"https://doi.org/10.1109/STYSW.2007.4559125","url":null,"abstract":"Passively mode-locked erbium doped fiber ring laser is investigated. We present laser configuration where nonlinear polarization rotation is used for modes synchronization. More than 32 nm output spectrum was obtained. Pulses repetition frequency stability and its temperature dependence is discussed and measured.","PeriodicalId":256930,"journal":{"name":"2007 International Students and Young Scientists Workshop on Photonics and Microsystems","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130459673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-07-08DOI: 10.1109/STYSW.2007.4559131
T. Ryznar, M. Nowacki, R. Tadaszak, A. Lukowiak, S. Patela, L. Golonka
The sol-gel technique has been long used for the purpose of integrated optics and connected with the Low Temperature Co-fired Ceramic technology seems to be a very promising solution to the integrated optics issue. Versatile SiO2 sol-gel silica and hybrid SiO2-TiO2 sol-gel layers have been fabricated and deposited on substrate in the dip-coating process. In order to measure the layers an ellipsometer has been used. A wide range of achieved refractive indexes and thicknesses enabled to produce a planar waveguide on a LTCC substrate. The structure has been investigated using the prism coupler technique which confirmed its waveguide character. In order to fabricate a stripe waveguide in a LTCC channel structure both SiO2 and hybrid SiO2-TiO2 sol-gel glass have been used. The LTCC substrate was dip-coated with pure silica - as the waveguide substrate layer - while the channel was filled with the hybrid solution which performed higher refractive index than silica. The structure 140 mum high and 500 mum wide has been measured with the help of cut-off technique and its attenuation has turned out to be 2,46 dB/cm at the wavelength of 632,8 nm.
{"title":"Fabrication and measurements of sol-gel planar and stripe waveguides in LTCC structure","authors":"T. Ryznar, M. Nowacki, R. Tadaszak, A. Lukowiak, S. Patela, L. Golonka","doi":"10.1109/STYSW.2007.4559131","DOIUrl":"https://doi.org/10.1109/STYSW.2007.4559131","url":null,"abstract":"The sol-gel technique has been long used for the purpose of integrated optics and connected with the Low Temperature Co-fired Ceramic technology seems to be a very promising solution to the integrated optics issue. Versatile SiO2 sol-gel silica and hybrid SiO2-TiO2 sol-gel layers have been fabricated and deposited on substrate in the dip-coating process. In order to measure the layers an ellipsometer has been used. A wide range of achieved refractive indexes and thicknesses enabled to produce a planar waveguide on a LTCC substrate. The structure has been investigated using the prism coupler technique which confirmed its waveguide character. In order to fabricate a stripe waveguide in a LTCC channel structure both SiO2 and hybrid SiO2-TiO2 sol-gel glass have been used. The LTCC substrate was dip-coated with pure silica - as the waveguide substrate layer - while the channel was filled with the hybrid solution which performed higher refractive index than silica. The structure 140 mum high and 500 mum wide has been measured with the help of cut-off technique and its attenuation has turned out to be 2,46 dB/cm at the wavelength of 632,8 nm.","PeriodicalId":256930,"journal":{"name":"2007 International Students and Young Scientists Workshop on Photonics and Microsystems","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132168496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-07-08DOI: 10.1109/STYSW.2007.4559133
D. Wojcieszak, D. Kaczmarek, J. Domaradzki, A. Borkowska
Doping of TiO2 with various metal ions can modify its different properties. In this work, structural properties of transparent Tb-doped TiO2 thin films have been outlined. Thin films were deposited by high energy reactive magnetron sputtering (HE RMS) from metallic Ti-Tb target on Si and SiO2 substrates. Thin films were investigated by means of energy disperse spectrometry (EDS), X-ray diffraction (XRD), atomic force microscopy (AFM) and optical transmission method. From EDS measurements Tb content in prepared thin films was determined to be 0.4 at. %, 2 at. % and 2.6 at. %. XRD analysis revealed the existence of crystalline TiO2 in the form of anatase and rutile, depending on Tb amount in examined samples. AFM images showed nanocrystalline structure of prepared thin films. Optical transmission studies showed that Tb-doped thin films are transparent to visible light. Also, the slight red shift of the fundamental absorption edge of TiO2 was observed with Tb doping.
{"title":"Structural properties of transparent Tb-doped TiO2 thin films","authors":"D. Wojcieszak, D. Kaczmarek, J. Domaradzki, A. Borkowska","doi":"10.1109/STYSW.2007.4559133","DOIUrl":"https://doi.org/10.1109/STYSW.2007.4559133","url":null,"abstract":"Doping of TiO2 with various metal ions can modify its different properties. In this work, structural properties of transparent Tb-doped TiO2 thin films have been outlined. Thin films were deposited by high energy reactive magnetron sputtering (HE RMS) from metallic Ti-Tb target on Si and SiO2 substrates. Thin films were investigated by means of energy disperse spectrometry (EDS), X-ray diffraction (XRD), atomic force microscopy (AFM) and optical transmission method. From EDS measurements Tb content in prepared thin films was determined to be 0.4 at. %, 2 at. % and 2.6 at. %. XRD analysis revealed the existence of crystalline TiO2 in the form of anatase and rutile, depending on Tb amount in examined samples. AFM images showed nanocrystalline structure of prepared thin films. Optical transmission studies showed that Tb-doped thin films are transparent to visible light. Also, the slight red shift of the fundamental absorption edge of TiO2 was observed with Tb doping.","PeriodicalId":256930,"journal":{"name":"2007 International Students and Young Scientists Workshop on Photonics and Microsystems","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114589382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-07-08DOI: 10.1109/STYSW.2007.4559120
C. Klaucke, K. Shirai, A. Voigt, C. Bayer, T. Pfister, L. Buttner, J. Czarske, M. Eggert, H. Muller
We report about a novel Laser-Doppler velocity profile sensor with high spatial resolution in the micrometer range. The sensor can be used for applications in fluid mechanics, e.g. flow measurements. Miniaturized sensors are often necessary to measure outside the laboratory. One approach utilizes a diffractive optical element (DOE) in order to reduce the number of optical elements. Another approach utilizes a frequency division multiplexing, where the frequency of multiple laser diode beams are controlled and superposed. Both approaches are discussed and compared.
{"title":"Development of miniaturized FDM and WDM Laser-Doppler velocity profile sensors","authors":"C. Klaucke, K. Shirai, A. Voigt, C. Bayer, T. Pfister, L. Buttner, J. Czarske, M. Eggert, H. Muller","doi":"10.1109/STYSW.2007.4559120","DOIUrl":"https://doi.org/10.1109/STYSW.2007.4559120","url":null,"abstract":"We report about a novel Laser-Doppler velocity profile sensor with high spatial resolution in the micrometer range. The sensor can be used for applications in fluid mechanics, e.g. flow measurements. Miniaturized sensors are often necessary to measure outside the laboratory. One approach utilizes a diffractive optical element (DOE) in order to reduce the number of optical elements. Another approach utilizes a frequency division multiplexing, where the frequency of multiple laser diode beams are controlled and superposed. Both approaches are discussed and compared.","PeriodicalId":256930,"journal":{"name":"2007 International Students and Young Scientists Workshop on Photonics and Microsystems","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116290807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-07-08DOI: 10.1109/STYSW.2007.4559114
M. Bulters, M. Breede, M. Hofmann, D. Jager
In this paper, a vertical pin-modulator is described, which replaces the standard backside mirror of the external cavity in a Littman-type laser system. By controlling the reflectivity of the pin-modulator the power of the output beam can be modulated. A pin-modulator with a reflectance contrast of about 4 dB leads to a contrast of more than 22 dB of the output power in the laser system. By using an array of vertical pin-modulators in the dispersive external arm of the resonator, whose pixels are matched to the individual wavelength, fast wavelength tuning and multi color operation will be possible.
{"title":"Vertical pin-modulator for controlling an external-cavity diode laser","authors":"M. Bulters, M. Breede, M. Hofmann, D. Jager","doi":"10.1109/STYSW.2007.4559114","DOIUrl":"https://doi.org/10.1109/STYSW.2007.4559114","url":null,"abstract":"In this paper, a vertical pin-modulator is described, which replaces the standard backside mirror of the external cavity in a Littman-type laser system. By controlling the reflectivity of the pin-modulator the power of the output beam can be modulated. A pin-modulator with a reflectance contrast of about 4 dB leads to a contrast of more than 22 dB of the output power in the laser system. By using an array of vertical pin-modulators in the dispersive external arm of the resonator, whose pixels are matched to the individual wavelength, fast wavelength tuning and multi color operation will be possible.","PeriodicalId":256930,"journal":{"name":"2007 International Students and Young Scientists Workshop on Photonics and Microsystems","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121092853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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