Pub Date : 2023-04-17DOI: 10.1109/WAMICON57636.2023.10124914
S. Nishi, Kazuhiko Tamesue, Toshio Sato, San Hlaing Myint, Takuro Sato, T. Kawanishi
The dielectric constant and dielectric loss tangent of various bonding films were evaluated by THz-Time Domain Spectroscopy (THz-TDS), and a bonding film with a small dielectric loss tangent in the 300 GHz band was found. Using this bonding film, a 4x4 element, 2-port antenna operating at 280 GHz was fabricated. The dielectric loss of the dielectric substrate was measured using a strip line loss evaluation pattern, and the dielectric loss tangent and surface roughness of the metal were determined to be consistent with the simulation. The antenna gain was found to be in good agreement with the measured antenna gain.
{"title":"Bonding Film Based 280 GHz Circularly Polarized Antenna Array Design","authors":"S. Nishi, Kazuhiko Tamesue, Toshio Sato, San Hlaing Myint, Takuro Sato, T. Kawanishi","doi":"10.1109/WAMICON57636.2023.10124914","DOIUrl":"https://doi.org/10.1109/WAMICON57636.2023.10124914","url":null,"abstract":"The dielectric constant and dielectric loss tangent of various bonding films were evaluated by THz-Time Domain Spectroscopy (THz-TDS), and a bonding film with a small dielectric loss tangent in the 300 GHz band was found. Using this bonding film, a 4x4 element, 2-port antenna operating at 280 GHz was fabricated. The dielectric loss of the dielectric substrate was measured using a strip line loss evaluation pattern, and the dielectric loss tangent and surface roughness of the metal were determined to be consistent with the simulation. The antenna gain was found to be in good agreement with the measured antenna gain.","PeriodicalId":270624,"journal":{"name":"2023 IEEE Wireless and Microwave Technology Conference (WAMICON)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124081271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-17DOI: 10.1109/WAMICON57636.2023.10124894
M. Marbell
A novel interstage match design using a parallel bondwire transformer is presented. Impedance transformation from the input of a GaN HEMT final stage to output of a GaN HEMT driver stage is achieved in part with a 1:4 wire ratio of the primary and secondary bondwires, as well as capacitive matching components in an interdigitated capacitor array. Analysis of the impedance transformation and extraction of the transformer parameters is shown using simulated data from a 3-D model of the interstage match. A fabricated prototype of a 2-stage GaN power amplifier using the transformer interstage match is shown. At 2.6GHz and maximum efficiency load, the amplifier has 30dB of linear gain, with 200 W output power and 69% drain efficiency for the final stage at 3dB compression.
{"title":"A High-Power RF GaN Amplifier Using Bondwire Transformer for Interstage Match","authors":"M. Marbell","doi":"10.1109/WAMICON57636.2023.10124894","DOIUrl":"https://doi.org/10.1109/WAMICON57636.2023.10124894","url":null,"abstract":"A novel interstage match design using a parallel bondwire transformer is presented. Impedance transformation from the input of a GaN HEMT final stage to output of a GaN HEMT driver stage is achieved in part with a 1:4 wire ratio of the primary and secondary bondwires, as well as capacitive matching components in an interdigitated capacitor array. Analysis of the impedance transformation and extraction of the transformer parameters is shown using simulated data from a 3-D model of the interstage match. A fabricated prototype of a 2-stage GaN power amplifier using the transformer interstage match is shown. At 2.6GHz and maximum efficiency load, the amplifier has 30dB of linear gain, with 200 W output power and 69% drain efficiency for the final stage at 3dB compression.","PeriodicalId":270624,"journal":{"name":"2023 IEEE Wireless and Microwave Technology Conference (WAMICON)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131661106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-17DOI: 10.1109/WAMICON57636.2023.10124917
W. Fathelbab
Advanced lowpass filtering networks comprising novel cascaded quadruplets and/or fivetuplets and/or sixtuplets are proposed in this work. Each of the new network sections realizes a single zero located at infinity and the rest can be positioned at finite frequencies thus offering increased control of the filter selectivity. The methodology derives the desired network configurations from a synthesized intermediate network based on equivalent circuits. Numerical examples of advanced lowpass networks comprising fifteen resonators are demonstrated. Furthermore, the EM implementations of two quadruplets in Combline technology are presented. Each quadruplet realizes a total of three finite frequency transmission zeros with one having all the zeros positioned below the passband and the other one above. The performances of the two quadruplet models are in good agreement with their circuit counterparts.
{"title":"Advanced Cascaded Filter Synthesis","authors":"W. Fathelbab","doi":"10.1109/WAMICON57636.2023.10124917","DOIUrl":"https://doi.org/10.1109/WAMICON57636.2023.10124917","url":null,"abstract":"Advanced lowpass filtering networks comprising novel cascaded quadruplets and/or fivetuplets and/or sixtuplets are proposed in this work. Each of the new network sections realizes a single zero located at infinity and the rest can be positioned at finite frequencies thus offering increased control of the filter selectivity. The methodology derives the desired network configurations from a synthesized intermediate network based on equivalent circuits. Numerical examples of advanced lowpass networks comprising fifteen resonators are demonstrated. Furthermore, the EM implementations of two quadruplets in Combline technology are presented. Each quadruplet realizes a total of three finite frequency transmission zeros with one having all the zeros positioned below the passband and the other one above. The performances of the two quadruplet models are in good agreement with their circuit counterparts.","PeriodicalId":270624,"journal":{"name":"2023 IEEE Wireless and Microwave Technology Conference (WAMICON)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130499383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-17DOI: 10.1109/WAMICON57636.2023.10124891
J. Kwon, Jinho Yoo, Jaeyong Lee, Tae-Hoo Kim, Changkun Park
This paper presents a sub-6 GHz dual-gate single-pole double-throw (SPDT) switch fabricated in a 0.5 μm GaAs pHEMT technology. All ports are matched by a single inductor which allows to achieve low insertion loss and high isolation in the operating frequency range of 3–5 GHz. Dual-gate technique and OFF-state voltage optimization were used to enhance linearity while reducing the insertion loss. The input and output return losses measured at 3–5 GHz were > 15 dB. The insertion loss was measured < 0.3 dB and isolation was > 32.7 dB at 3–5 GHz. At 3 GHz, the measurement result of the input 1-dB compression point (IP1dB) was higher than 34.2 dBm. The chip area of the proposed SPDT switch, including pads, is 0.97 × 0.86 mm2.
{"title":"Sub-6 GHz GaAs pHEMT SPDT Switch with Low Insertion Loss and High Power Handling Capability Using Dual-Gate Technique","authors":"J. Kwon, Jinho Yoo, Jaeyong Lee, Tae-Hoo Kim, Changkun Park","doi":"10.1109/WAMICON57636.2023.10124891","DOIUrl":"https://doi.org/10.1109/WAMICON57636.2023.10124891","url":null,"abstract":"This paper presents a sub-6 GHz dual-gate single-pole double-throw (SPDT) switch fabricated in a 0.5 μm GaAs pHEMT technology. All ports are matched by a single inductor which allows to achieve low insertion loss and high isolation in the operating frequency range of 3–5 GHz. Dual-gate technique and OFF-state voltage optimization were used to enhance linearity while reducing the insertion loss. The input and output return losses measured at 3–5 GHz were > 15 dB. The insertion loss was measured < 0.3 dB and isolation was > 32.7 dB at 3–5 GHz. At 3 GHz, the measurement result of the input 1-dB compression point (IP1dB) was higher than 34.2 dBm. The chip area of the proposed SPDT switch, including pads, is 0.97 × 0.86 mm2.","PeriodicalId":270624,"journal":{"name":"2023 IEEE Wireless and Microwave Technology Conference (WAMICON)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130145152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-17DOI: 10.1109/WAMICON57636.2023.10124895
S. Venkatesh, H. Saeidi, K. Sengupta, Xuyang Lu
Though the initial deployment of 5G millimeter-Wave (mmWave) networks has demonstrated multi-Gb/s wireless links, they are often highly susceptible to blockages, channel disruptions, and fading due to the nature of their directive beams. To overcome this major impediment, the next generation of communication systems will have to be resilient, which encompasses security, adaptability, and autonomy. Reconfigurable Intelligent Surfaces (RISs) have emerged as a potential candidate to address these challenges and have the capability to dynamically reconfigure the radio propagation channels on-the-fly. In this invited article, we present two reconfigurable intelligent electromagnetic surface designs enabled through CMOS ICs namely, a) mm-Wave 57–64 GHz active reconfigurable reflector array b) THz dynamically programmable passive holographic metasurface enabled through CMOS IC tiling approach.
{"title":"Active and Passive Reconfigurable Intelligent Surfaces at mm-Wave and THz bands enabled by CMOS Integrated Chips","authors":"S. Venkatesh, H. Saeidi, K. Sengupta, Xuyang Lu","doi":"10.1109/WAMICON57636.2023.10124895","DOIUrl":"https://doi.org/10.1109/WAMICON57636.2023.10124895","url":null,"abstract":"Though the initial deployment of 5G millimeter-Wave (mmWave) networks has demonstrated multi-Gb/s wireless links, they are often highly susceptible to blockages, channel disruptions, and fading due to the nature of their directive beams. To overcome this major impediment, the next generation of communication systems will have to be resilient, which encompasses security, adaptability, and autonomy. Reconfigurable Intelligent Surfaces (RISs) have emerged as a potential candidate to address these challenges and have the capability to dynamically reconfigure the radio propagation channels on-the-fly. In this invited article, we present two reconfigurable intelligent electromagnetic surface designs enabled through CMOS ICs namely, a) mm-Wave 57–64 GHz active reconfigurable reflector array b) THz dynamically programmable passive holographic metasurface enabled through CMOS IC tiling approach.","PeriodicalId":270624,"journal":{"name":"2023 IEEE Wireless and Microwave Technology Conference (WAMICON)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115361815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-17DOI: 10.1109/WAMICON57636.2023.10124922
Jiachen Guo, Kenle Chen
This paper presents a novel Double-Balanced power amplifiers (PAs) architecture with an intrinsic isolation to load. Derived from the generic load modulated Balanced Amplifier (LMBA), by designing the single-ended control amplifier (CA) as another balanced PA, the load-modulated double-balanced amplifier (LMDBA) can inherit the intrinsic load-mismatch tolerance of balanced amplifier without any reconfiguration and load-impedance sensing. A proof-of-concept is demonstrated using two balanced GaN power amplifiers and branch-line quadrature hybrid couplers at 2.1 GHz. The implemented PA achieves an efficiency of 76.2% at peak power and 69.5% at 10-dB output back-off (OBO) under the matched condition of load. An efficiency up to 72.5% at peak power and up to 64.1% at 10-dB OBO are measured under 2 : 1 VSWR of load. In modulated evaluation with a 20-MHz OFDM signal, an EVM of 1.9%, ACPR of −41 dB is measured under matched condition after Digital Pre-Distortion (DPD). The PA’s linearity profiles are well sustained experimentally against 2 : 1 VSWR of load mismatch, e.g., 2.1% of EVM and up to −39.5 dB of ACPR.
{"title":"Load-Modulated Double-Balanced Amplifier with Quasi-Isolation to Load","authors":"Jiachen Guo, Kenle Chen","doi":"10.1109/WAMICON57636.2023.10124922","DOIUrl":"https://doi.org/10.1109/WAMICON57636.2023.10124922","url":null,"abstract":"This paper presents a novel Double-Balanced power amplifiers (PAs) architecture with an intrinsic isolation to load. Derived from the generic load modulated Balanced Amplifier (LMBA), by designing the single-ended control amplifier (CA) as another balanced PA, the load-modulated double-balanced amplifier (LMDBA) can inherit the intrinsic load-mismatch tolerance of balanced amplifier without any reconfiguration and load-impedance sensing. A proof-of-concept is demonstrated using two balanced GaN power amplifiers and branch-line quadrature hybrid couplers at 2.1 GHz. The implemented PA achieves an efficiency of 76.2% at peak power and 69.5% at 10-dB output back-off (OBO) under the matched condition of load. An efficiency up to 72.5% at peak power and up to 64.1% at 10-dB OBO are measured under 2 : 1 VSWR of load. In modulated evaluation with a 20-MHz OFDM signal, an EVM of 1.9%, ACPR of −41 dB is measured under matched condition after Digital Pre-Distortion (DPD). The PA’s linearity profiles are well sustained experimentally against 2 : 1 VSWR of load mismatch, e.g., 2.1% of EVM and up to −39.5 dB of ACPR.","PeriodicalId":270624,"journal":{"name":"2023 IEEE Wireless and Microwave Technology Conference (WAMICON)","volume":"182 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116307285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-17DOI: 10.1109/WAMICON57636.2023.10124904
Sreekala Suseela, Taofeek Orekan, Swadipta Roy, J. McConkey, Reamonn Soto
Real time passive wireless temperature sensing system used to monitor helicopter turbine blade temperatures is presented here. The turbine blades were rotating at full speeds (16,000 rpm, equivalent g-load 45,000g) and temperatures above 850°C was monitored and experimentally evaluated and demonstrated. The system uses passive wireless sensor attached to the blades using robust mechanisms and the blade temperature was monitored and recorded in real time. The sensors were interrogated using high temperature silicon dioxide co-axial cable slot antenna using radio frequency resonance-based sensing. The sensor-antenna set up was employed for temperature monitoring up to 1100 °C in high-vibrating metallic environment. Real time temperature monitoring was provided by indigenous software (Turbotrack).
{"title":"Real Time Monitoring of Helicopter Turbine Blade Temperature Using Passive Wireless Sensor","authors":"Sreekala Suseela, Taofeek Orekan, Swadipta Roy, J. McConkey, Reamonn Soto","doi":"10.1109/WAMICON57636.2023.10124904","DOIUrl":"https://doi.org/10.1109/WAMICON57636.2023.10124904","url":null,"abstract":"Real time passive wireless temperature sensing system used to monitor helicopter turbine blade temperatures is presented here. The turbine blades were rotating at full speeds (16,000 rpm, equivalent g-load 45,000g) and temperatures above 850°C was monitored and experimentally evaluated and demonstrated. The system uses passive wireless sensor attached to the blades using robust mechanisms and the blade temperature was monitored and recorded in real time. The sensors were interrogated using high temperature silicon dioxide co-axial cable slot antenna using radio frequency resonance-based sensing. The sensor-antenna set up was employed for temperature monitoring up to 1100 °C in high-vibrating metallic environment. Real time temperature monitoring was provided by indigenous software (Turbotrack).","PeriodicalId":270624,"journal":{"name":"2023 IEEE Wireless and Microwave Technology Conference (WAMICON)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123643874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-17DOI: 10.1109/WAMICON57636.2023.10124920
Minh-Tan Nguyen, Hua‐Ming Chen, Chien‐Hung Chen, Yi‐Fang Lin
A miniaturized novel antenna design for a UHF RFID tag placed on a container of filled liquid is described in this study. A perfect match between the input impedance of the antenna, equivalent circuit model, and complex impedance of a Monza-6 chip (10.5-j134 Ohm at 915 MHz), can be achieved by changing the size of the gaps or controlling the capacitance of Cg. To optimize the dimension of the antenna and minimize the effects of the tag antenna on a container of full liquid with high conductivity and permittivity, the design technique based on the excitation of the same direction surface current paths is introduced to lengthen the effective electrical length of the tag. Consequently, the tag not only becomes smaller in size but also yields a stable reading distance (> 5.0 m). The simulated and measured results confirm the presence of the liquid, which does not affect the performance of the tag.
{"title":"A Miniaturized UHF RFID Tag Antenna Attached to a Container of Filled Liquid","authors":"Minh-Tan Nguyen, Hua‐Ming Chen, Chien‐Hung Chen, Yi‐Fang Lin","doi":"10.1109/WAMICON57636.2023.10124920","DOIUrl":"https://doi.org/10.1109/WAMICON57636.2023.10124920","url":null,"abstract":"A miniaturized novel antenna design for a UHF RFID tag placed on a container of filled liquid is described in this study. A perfect match between the input impedance of the antenna, equivalent circuit model, and complex impedance of a Monza-6 chip (10.5-j134 Ohm at 915 MHz), can be achieved by changing the size of the gaps or controlling the capacitance of Cg. To optimize the dimension of the antenna and minimize the effects of the tag antenna on a container of full liquid with high conductivity and permittivity, the design technique based on the excitation of the same direction surface current paths is introduced to lengthen the effective electrical length of the tag. Consequently, the tag not only becomes smaller in size but also yields a stable reading distance (> 5.0 m). The simulated and measured results confirm the presence of the liquid, which does not affect the performance of the tag.","PeriodicalId":270624,"journal":{"name":"2023 IEEE Wireless and Microwave Technology Conference (WAMICON)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125072583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-17DOI: 10.1109/WAMICON57636.2023.10124921
S. Hamidi, D. Dawn
This paper proposes a fully-integrated band-switchable low noise amplifier (LNA) which enables three frequency bands of 1GHz, 1.5GHz, and 2GHz by using a proper combination of impedance matching networks at the input and output planes of the LNA. The proposed multi-band low noise amplifier is designed and fabricated in 0.18μm CMOS process with die-size of 3.5mm × 0.9mm. The measured results shows that the proposed band-switchable LNA achieves small-signal gain (S21) of 31dB/31dB/31dB, input reflection coefficient (S11) of −16dB/−14dB/−11dB, and RF saturated output power (Psat) of 10dBm/10dBm/10dBm at 1GHz/1.5GHz/2GHz, respectively. Furthermore, noise figure (NF) of the proposed LNA is observed 3.0dB/3.5dB/3.6dB at the three targeted frequency bands, respectively.
{"title":"A Fully-Integrated Band-Switchable CMOS Low Noise Amplifier","authors":"S. Hamidi, D. Dawn","doi":"10.1109/WAMICON57636.2023.10124921","DOIUrl":"https://doi.org/10.1109/WAMICON57636.2023.10124921","url":null,"abstract":"This paper proposes a fully-integrated band-switchable low noise amplifier (LNA) which enables three frequency bands of 1GHz, 1.5GHz, and 2GHz by using a proper combination of impedance matching networks at the input and output planes of the LNA. The proposed multi-band low noise amplifier is designed and fabricated in 0.18μm CMOS process with die-size of 3.5mm × 0.9mm. The measured results shows that the proposed band-switchable LNA achieves small-signal gain (S21) of 31dB/31dB/31dB, input reflection coefficient (S11) of −16dB/−14dB/−11dB, and RF saturated output power (Psat) of 10dBm/10dBm/10dBm at 1GHz/1.5GHz/2GHz, respectively. Furthermore, noise figure (NF) of the proposed LNA is observed 3.0dB/3.5dB/3.6dB at the three targeted frequency bands, respectively.","PeriodicalId":270624,"journal":{"name":"2023 IEEE Wireless and Microwave Technology Conference (WAMICON)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127337125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-03-13DOI: 10.1109/WAMICON57636.2023.10124899
Justin McMillen, G. Mumcu, Y. Yilmaz
Radio frequency (RF) fingerprinting is a tool which allows for authentication by utilizing distinct and random distortions in a received signal based on characteristics of the transmitter. We introduce a deep learning-based authentication method for a novel RF fingerprinting system called Physically Unclonable Wireless Systems (PUWS). An element of PUWS is based on the concept of Chaotic Antenna Arrays (CAAs) that can be cost effectively manufactured by utilizing mask-free laser-enhanced direct print additive manufacturing (LE-DPAM). In our experiments, using simulation data of 300 CAAs each exhibiting 4 antenna elements, we test 5 different convolutional neural network (CNN) architectures under different channel conditions and compare their authentication performance to the current state-of-the-art RF fingerprinting authentication methods.
{"title":"Deep Learning-based RF Fingerprint Authentication with Chaotic Antenna Arrays","authors":"Justin McMillen, G. Mumcu, Y. Yilmaz","doi":"10.1109/WAMICON57636.2023.10124899","DOIUrl":"https://doi.org/10.1109/WAMICON57636.2023.10124899","url":null,"abstract":"Radio frequency (RF) fingerprinting is a tool which allows for authentication by utilizing distinct and random distortions in a received signal based on characteristics of the transmitter. We introduce a deep learning-based authentication method for a novel RF fingerprinting system called Physically Unclonable Wireless Systems (PUWS). An element of PUWS is based on the concept of Chaotic Antenna Arrays (CAAs) that can be cost effectively manufactured by utilizing mask-free laser-enhanced direct print additive manufacturing (LE-DPAM). In our experiments, using simulation data of 300 CAAs each exhibiting 4 antenna elements, we test 5 different convolutional neural network (CNN) architectures under different channel conditions and compare their authentication performance to the current state-of-the-art RF fingerprinting authentication methods.","PeriodicalId":270624,"journal":{"name":"2023 IEEE Wireless and Microwave Technology Conference (WAMICON)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132757796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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