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Proceedings of the 2016 on International Symposium on Physical Design最新文献

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Session details: PD for Reliability and Adaptability 会话细节:PD用于可靠性和适应性
Shuai Li
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引用次数: 0
Proximity Optimization for Adaptive Circuit Design 自适应电路设计的邻近优化
Pub Date : 2016-04-03 DOI: 10.1145/2872334.2872354
Ang Lu, Hao He, Jiang Hu
The performance growth of conventional VLSI circuits is seriously hampered by various variation effects and the fundamental limit of chip power density. Adaptive circuit design is recognized as a power-efficient approach to tackling the variation challenge. However, it tends to entail large area overhead if not carefully designed. This work studies how to reduce the overhead by forming adaptivity blocks considering both timing and spatial proximity among logic cells. The proximity optimization consists of timing and location aware cell clustering and incremental placement enforcing the clusters. Experiments are performed on the ICCAD 2014 benchmark circuits, which include case of near one million cells. Compared to alternative methods, our approach achieves 1/4 to 3/4 area overhead reduction with an average of 0.6% wirelength overhead, while retains about the same timing yield and power.
传统VLSI电路的性能增长受到各种变化效应和芯片功率密度的基本限制的严重阻碍。自适应电路设计被认为是解决变化挑战的一种节能方法。然而,如果不仔细设计,它往往会带来很大的面积开销。本文研究了如何在考虑逻辑单元之间的时间和空间接近性的情况下,通过形成自适应块来减少开销。邻近优化包括时间和位置感知单元聚类以及强制集群的增量放置。在ICCAD 2014基准电路上进行了实验,其中包括近100万个电池的情况。与其他方法相比,我们的方法实现了1/4到3/4的面积开销减少,平均带宽开销为0.6%,同时保持了大致相同的时序产量和功率。
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引用次数: 0
Scaling Beyond 7nm: Design-Technology Co-optimization at the Rescue 7nm以上的扩展:设计-技术协同优化在救援
Pub Date : 2016-04-03 DOI: 10.1145/2872334.2893446
J. Ryckaert
At 7nm and beyond, designers need to support scaling by identifying the most optimal patterning schemes for their designs. Moreover, designers can actively help by exploring scaling options that do not necessarily require aggressive pitch scaling. In this talk we will illustrate how design technology co-optimization can help achieving the expected Moore's law scaling; how optimizing device performance can lead to smaller standard cells; how the metal interconnect stack needs to be adjusted for unidirectional metals and how a vertical transistor can shift design paradigms. This paper demonstrates that scaling has become a joint design-technology co-optimization effort between process technology and design specialists, that expands way beyond just patterning enabled dimensional scaling.
在7nm及以上,设计人员需要通过为他们的设计确定最优的模式方案来支持缩放。此外,设计师可以通过探索不一定需要积极缩放的缩放选项来积极地提供帮助。在本次演讲中,我们将阐述设计技术协同优化如何帮助实现预期的摩尔定律缩放;如何优化设备性能可以导致更小的标准电池;如何调整单向金属的金属互连堆栈,以及垂直晶体管如何改变设计范式。本文表明,缩放已经成为工艺技术和设计专家之间的联合设计-技术协同优化努力,这远远超出了图形化实现的尺寸缩放。
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引用次数: 2
An Interactive Physical Synthesis Methodology for High-Frequency FPGA Designs 高频FPGA设计的交互式物理综合方法
Pub Date : 2016-04-03 DOI: 10.1145/2872334.2872340
Sabya Das, R. Aggarwal, Zhiyong Wang
State-of-the-art FPGA design has become a very complex process primarily due to the aggressive timing requirements of the designs. Designers spend significant amount of time and effort trying to close the timing on their latest designs. In that timing closure methodology, Physical Synthesis plays a key role to boost the design performance. In traditional approaches, user performs placement followed by physical synthesis. As the design complexity increases, physical synthesis cannot perform all the optimization steps due to the physical constraints imposed by the placement operation. In this work, we propose an interactive methodology to perform physical synthesis in the pre-placement stage of the FPGA timing closure flow. The approach will work in two iterations of the design flow. In the first iteration, the designer will perform the regular post-placement physical synthesis operation on the design. That phase will automatically write a replayable-file which will contain information about all the optimization actions. That file also contains all the attempted optimization moves what physical synthesis deemed beneficial from QoR perspective, but was not able to accept due to the physical constraint. In the second iteration of the design flow, the designer will perform all those physical synthesis optimizations by importing the replayable file in the pre-placement stage. In addition to performing the physical synthesis flow's changes, it also performs the optimizations that were not possible in the traditional physical synthesis flow. After these changes are made in the logical stage of the design flow, the crucial placement step can adapt to the optimized/better netlist structure. As a result, this approach will greatly help the users reach their challenging timing closure goal. We have evaluated the effectiveness and performance of our proposed approach on a large set of industrial designs. All these designs were targeted towards the latest Xilinx Ultrascale™ devices. Our experimental data indicates that the proposed approach improves the design performance by 4% to 5%, on an average.
最先进的FPGA设计已经成为一个非常复杂的过程,主要是由于设计的时序要求很高。设计师花费大量的时间和精力来完成他们最新的设计。在时序闭合方法中,物理合成在提高设计性能方面起着关键作用。在传统的方法中,用户进行放置,然后进行物理合成。随着设计复杂性的增加,由于放置操作施加的物理约束,物理合成无法执行所有优化步骤。在这项工作中,我们提出了一种交互式方法,在FPGA时序关闭流的预放置阶段执行物理合成。该方法将在设计流的两次迭代中工作。在第一次迭代中,设计师将对设计进行常规的放置后物理合成操作。该阶段将自动编写包含所有优化操作信息的可重放文件。该文件还包含所有尝试的优化移动,物理合成认为从QoR角度来看是有益的,但由于物理约束而无法接受。在设计流程的第二次迭代中,设计师将通过在预放置阶段导入可重玩文件来执行所有这些物理合成优化。除了执行物理合成流的更改之外,它还执行在传统物理合成流中不可能实现的优化。在设计流程的逻辑阶段进行这些更改后,关键的放置步骤可以适应优化/更好的网表结构。因此,这种方法将极大地帮助用户实现具有挑战性的定时关闭目标。我们已经在大量的工业设计中评估了我们提出的方法的有效性和性能。所有这些设计都针对最新的赛灵思Ultrascale™设备。我们的实验数据表明,该方法平均提高了4%至5%的设计性能。
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引用次数: 0
A Machine Learning Based Framework for Sub-Resolution Assist Feature Generation 基于机器学习的子分辨率辅助特征生成框架
Pub Date : 2016-04-03 DOI: 10.1145/2872334.2872357
Xiaoqing Xu, Tetsuaki Matsunawa, S. Nojima, C. Kodama, T. Kotani, D. Pan
Sub-Resolution Assist Feature (SRAF) generation is a very important resolution enhancement technique to improve yield in modern semiconductor manufacturing process. Model- based SRAF generation has been widely used to achieve high accuracy but it is known to be time consuming and it is hard to obtain consistent SRAFs on the same layout pattern configurations. This paper proposes the first ma- chine learning based framework for fast yet consistent SRAF generation with high quality of results. Our technical con- tributions include robust feature extraction, novel feature compaction, model training for SRAF classification and pre- diction, and the final SRAF generation with consideration of practical mask manufacturing constraints. Experimental re- sults demonstrate that, compared with commercial Calibre tool, our machine learning based SRAF generation obtains 10X speed up and comparable performance in terms of edge placement error (EPE) and process variation (PV) band.
子分辨率辅助特征(SRAF)的生成是现代半导体制造过程中提高良率的重要分辨率增强技术。基于模型的SRAF生成已被广泛应用于高精度的SRAF生成,但它耗时且难以在相同的布局模式配置上获得一致的SRAF。本文提出了第一个基于机器学习的框架,用于快速且一致的SRAF生成和高质量的结果。我们的技术贡献包括鲁棒特征提取、新颖特征压缩、用于SRAF分类和预测的模型训练,以及考虑实际掩模制造约束的最终SRAF生成。实验结果表明,与商用Calibre工具相比,我们基于机器学习的SRAF生成在边缘放置误差(EPE)和过程变化(PV)波段方面获得了10倍的速度和相当的性能。
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引用次数: 34
Some Observations on the Physical Design of the Next Decade 对未来十年物理设计的一些看法
Pub Date : 2016-04-03 DOI: 10.1145/2872334.2878630
A. Domic
While physical design continues to fight the traditional data capacity and runtime challenges, it has also become critically important to overcome many drawbacks of the silicon technology roadmap. At the emerging technology nodes, namely 10, 7 and 5 nanometers, sheer complexity hits unprecedented levels. Integration capacity in terms of number of transistors already exceeds 100 billion of transistors per die, with 1 trillion within our reach. Standard-cell complex abutment and multi-VTH design rules pose new placement challenge. Non-planar transistors get smaller and taller, but contacted metal pitch doesn't scale accordingly, thus making pins accessibility harder and introducing new routing congestion issues. Lithography transition to EUV is still unclear, which translates into triple, quadruple, and even octuple patterning cannot be ruled out. Interconnect RC delay not only has by far the lion's share of total delay, but its variation across the stack has reached over one order of magnitude between the lowest (Mx) and the highest (Mz) layers, while the R contribution of vias increases dramatically. Finally, the modelling, characterization, and computing of near-threshold -- ultra-low voltage -- design effects and their impact on timing and power bring design closure up to a much higher level of complexity. At the established technology nodes, unlike in the past, the oldest nodes are not discontinued. On the contrary, not only the number of active technology nodes in volume production is increasing, but more than 90% of designs in 2016 will be at 45/40 nanometers and above, accounting for more than 60% of wafer production by area. However, today 180 nm designs are radically different from their late 1990s distant relatives. Physical design is increasingly being relied upon to achieve lower area and power, as well as to reduce the required silicon resources in the interest of a better performance and power envelope at a lower cost. Sophisticated physical design methodologies, originally devised for survival at the emerging technology nodes, are more and more frequently used to improve the metrics of the established technology nodes, and to extend their useful lifespan for a very long time. Production volumes dictate which applications rush to the newest emerging technology nodes and which ones continue to hold at the established nodes. However, it is increasingly difficult to integrate digital computing with analog interfaces, to say nothing about sensors and actuators, energy harvesting or silicon photonics. It is hard to think of digital and true analog & mixed-signal blocks co-existing on the same die at 7 or 5 nanometers. 2.5D-IC and perhaps eventually 3D-IC integration will be required whenever digital computing won't be sufficient. For all these reasons, the scope of physical design is expanding. On the one hand, all the diverse requirements of a broadening set of technology nodes have to be taken into consideration because our industry can
虽然物理设计继续与传统的数据容量和运行时挑战作斗争,但克服硅技术路线图的许多缺点也变得至关重要。在新兴的技术节点,即10、7和5纳米,纯粹的复杂性达到了前所未有的水平。就晶体管数量而言,每个芯片的集成能力已经超过了1000亿个晶体管,而我们可以达到1万亿个晶体管。标准单元复合基台和多vth设计规则提出了新的布局挑战。非平面晶体管变得越来越小,越来越高,但接触金属间距并没有相应地扩大,因此使引脚难以接近并引入新的路由拥塞问题。光刻技术向EUV的转变尚不清楚,不能排除其转化为三重、四重甚至八重图案的可能性。到目前为止,互连RC延迟不仅占总延迟的最大份额,而且其在堆栈上的变化在最低(Mx)和最高(Mz)层之间达到了一个数量级以上,而过孔的R贡献急剧增加。最后,近阈值——超低电压——设计效果的建模、表征和计算,以及它们对时序和功率的影响,使设计的封闭性达到了更高的复杂性水平。在已建立的技术节点上,与过去不同的是,最老的节点并没有停止。相反,不仅量产中的活跃技术节点数量在增加,而且2016年超过90%的设计将在45/40纳米及以上,按面积计算占晶圆产量的60%以上。然而,今天的180纳米设计与上世纪90年代末的远亲完全不同。物理设计越来越依赖于实现更低的面积和功耗,以及减少所需的硅资源,以更低的成本获得更好的性能和功率包膜。复杂的物理设计方法最初是为了在新兴技术节点上生存而设计的,现在越来越多地用于改进已建立的技术节点的度量,并延长它们的使用寿命。产量决定了哪些应用程序会涌向最新的新兴技术节点,哪些应用程序会继续留在现有的节点上。然而,将数字计算与模拟接口集成变得越来越困难,更不用说传感器和执行器、能量收集或硅光子学了。很难想象数字和真正的模拟和混合信号模块共存于7或5纳米的同一个芯片上。当数字计算无法满足需求时,就需要2.5D-IC和最终的3D-IC集成。由于所有这些原因,物理设计的范围正在扩大。一方面,由于我们的行业无法为不同的技术节点开发和维护不同的工具,因此必须考虑不断扩大的技术节点的所有不同需求。另一方面,地板规划者、放置者和路由器必须处理超出经典数字P&R的对象和结构:例如,模拟放置和路由要求自动化与交互性共存;硅中间层需要“板级”类型的I/O规划和互连解结,以及在硅通孔(TSV)和微凸点/柱之间的重新分配层(RDL)的非曼哈顿路由。物理设计基础设施必须同时处理多个模具,使用不同的技术节点实现,或者用于完全不同的操作条件。未来十年的物理设计需要新的创新浪潮来支持所需的“革命性演变”,并在可接受的时间内继续提供最佳质量的结果。
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引用次数: 3
Scaling Up Physical Design: Challenges and Opportunities 扩大物理设计:挑战和机遇
Pub Date : 2016-04-03 DOI: 10.1145/2872334.2872342
Guojie Luo, Wentai Zhang, Jiaxi Zhang, J. Cong
Due to the continuous scaling of integration density and the increasing diversity of customized designs, there are increasing demands on the scalability and the customization of EDA tools and flows. Commercial EDA tools usually provide an interface of TCL scripting to extract and modify the design information for a flexible design flow. However, we observe that the current TCL scripting is not designed for the complete netlist extraction, resulting in a significant degradation in performance. For example, it takes over 20 minutes to extract the complete netlist of a 466K-cell design using TCL. This extraction may be repeated several times when interfacing between the existing EDA platforms and the actual distributed EDA algorithms. This drastic decrease in efficiency is a great barrier for customized EDA tool development. In this paper, we propose to build a distributed framework on top of TCL to accelerate the netlist extraction and use the distribution detailed placement as an example to demonstrate its capability. This framework is promising in scaling out physical design algorithms to run on a cluster.
由于集成密度的不断扩大和定制设计的日益多样化,对EDA工具和流程的可扩展性和可定制性的要求越来越高。商业EDA工具通常提供TCL脚本接口,用于提取和修改设计信息,以实现灵活的设计流。然而,我们注意到当前的TCL脚本并不是为完整的网络列表提取而设计的,这导致了性能的显著下降。例如,使用TCL提取466k单元设计的完整网络列表需要20多分钟。当在现有EDA平台和实际的分布式EDA算法之间进行接口时,这种提取可能会重复多次。这种效率的急剧下降是定制EDA工具开发的一大障碍。本文提出在TCL的基础上构建一个分布式框架来加速网络列表的提取,并以分布详细放置为例说明其能力。这个框架很有希望将物理设计算法扩展到集群上运行。
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引用次数: 4
PLATON
Pub Date : 2016-04-03 DOI: 10.1145/2872334.2872356
Anja von Beuningen, Ulf Schlichtmann
Optical Networks-on-Chip (ONoCs) are a promising technology to further increase the bandwidth and decrease the power consumption of today's multicore systems. To determine the laser power consumption of an ONoC, the physical design of the system is indispensible. The only place and route tool for 3D ONoCs already proposed in the literature badly scales with the increasing number of optical devices. Thus, within this contribution we present the first force-directed placement algorithm for 3D optical NoCs. Our algorithm decreases the runtime up to 99.7% compared to the state-of-the-art placer. Using our algorithm large topologies can be placed within a short runtime.
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引用次数: 18
A Designer's Perspective on Timing Closure 设计师对定时闭包的看法
Pub Date : 2016-04-03 DOI: 10.1145/2872334.2872339
G. Ford
As technology nodes advance and designs become more complex, EDA developers strive to provide new and better solutions to the traditional problems encountered in back-end implementation. The usefulness of these EDA solutions is dependent on acceptance by designers, who often have different goals than developers. This presentation will offer a designer's perspective on current EDA solutions, with a focus on timing closure. Topics will include automated floorplanning goals, clock tree structure tradeoffs, data net repowering challenges and hold padding strategies. Examples from design experience will be used to illustrate where current EDA solutions work well, and what the obstacles are in cases where they do not.
随着技术节点的进步和设计变得越来越复杂,EDA开发人员努力为后端实现中遇到的传统问题提供新的、更好的解决方案。这些EDA解决方案的有用性取决于设计人员的接受程度,而设计人员的目标通常与开发人员不同。本演讲将提供设计师对当前EDA解决方案的看法,重点是时序关闭。主题将包括自动化地板规划目标,时钟树结构权衡,数据网络重新供电挑战和持有填充策略。将使用设计经验中的例子来说明当前的EDA解决方案在哪些地方工作得很好,以及在它们不工作的情况下存在哪些障碍。
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引用次数: 0
Complexity and Diversity in IC Layout Design 集成电路版图设计的复杂性和多样性
Pub Date : 2016-04-03 DOI: 10.1145/2872334.2872348
R. Otten
The paper is a concise survey as well as an exposition of ideas about automation of layout design. Central is a discussion of imperatives of a layout design system suitable for VLSI. Of course, such a system has to take account of the embedding into an integrated design system. However, layout design faces two major problems. One results from industry's ability to pack over 10000 gate equivalents into a single chip. Beside this increase in complexity today's micro-electronics technology made a variety of processes - each with its own set of design rules - available for integration. This diversity has been existing for a long time, but complexity raised the problem, since development of efficient systems for designing complex systems is costly and time-consuming.
本文是对版式设计自动化思想的简要概述和阐述。中心讨论了适合VLSI的版图设计系统的要点。当然,这样的系统必须考虑嵌入到一个集成的设计系统中。然而,版式设计面临两个主要问题。一个原因是工业界有能力将超过10000个等效栅极封装到一个芯片中。除了复杂性的增加之外,今天的微电子技术使各种各样的工艺-每个工艺都有自己的一套设计规则-可以集成。这种多样性已经存在了很长一段时间,但复杂性提出了问题,因为开发设计复杂系统的有效系统既昂贵又耗时。
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引用次数: 2
期刊
Proceedings of the 2016 on International Symposium on Physical Design
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