C. Bespin, I. Caicedo, J. Dingfelder, T. Hemperek, T. Hirono, F. Hugging, H. Kruger, K. Moustakas, H. Pernegger, P. Riedler, L. Schall, W. Snoeys, N. Wermes
Monolithic CMOS pixel detectors have emerged as competitive contenders in the field of high-energy particle physics detectors. By utilizing commercial processes they offer high-volume production of such detectors. A series of prototypes has been designed in a 180$,$nm Tower process with depletion of the sensor material and a column-drain readout architecture. The latest iteration, TJ-Monopix2, features a large 2$,$cm x 2$,$cm matrix consisting of 512 x 512 pixels with 33.04$,$um pitch. A small collection electrode design aims at low power consumption and low noise while the radiation tolerance for high-energy particle detector applications needs extra attention. With a goal to reach radiation tolerance to levels of $10^{15},1,$MeV n$_text{eq},$cm$^{-2}$ of NIEL damage a modification of the standard process has been implemented by adding a low-dosed n-type silicon implant across the pixel in order to allow for homogeneous depletion of the sensor volume. Recent lab measurements and beam tests were conducted for unirradiated modules to study electrical characteristics and hit detection efficiency.
{"title":"Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180 nm CMOS technology","authors":"C. Bespin, I. Caicedo, J. Dingfelder, T. Hemperek, T. Hirono, F. Hugging, H. Kruger, K. Moustakas, H. Pernegger, P. Riedler, L. Schall, W. Snoeys, N. Wermes","doi":"10.22323/1.420.0080","DOIUrl":"https://doi.org/10.22323/1.420.0080","url":null,"abstract":"Monolithic CMOS pixel detectors have emerged as competitive contenders in the field of high-energy particle physics detectors. By utilizing commercial processes they offer high-volume production of such detectors. A series of prototypes has been designed in a 180$,$nm Tower process with depletion of the sensor material and a column-drain readout architecture. The latest iteration, TJ-Monopix2, features a large 2$,$cm x 2$,$cm matrix consisting of 512 x 512 pixels with 33.04$,$um pitch. A small collection electrode design aims at low power consumption and low noise while the radiation tolerance for high-energy particle detector applications needs extra attention. With a goal to reach radiation tolerance to levels of $10^{15},1,$MeV n$_text{eq},$cm$^{-2}$ of NIEL damage a modification of the standard process has been implemented by adding a low-dosed n-type silicon implant across the pixel in order to allow for homogeneous depletion of the sensor volume. Recent lab measurements and beam tests were conducted for unirradiated modules to study electrical characteristics and hit detection efficiency.","PeriodicalId":275608,"journal":{"name":"Proceedings of 10th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging — PoS(Pixel2022)","volume":"250 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114014651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zhehui Wang, Xin Yue, Shanny Lin, Wenting Li, B. Wolfe, S. Clayton, M. Makela, Chris Morris, S. Spannagel, E. Ramberg, J. Estrada, Hao Zhu, Jifeng Liu, E. Fossum
We summarize recent progress in ultrafast Complementary Metal Oxide Semiconductor (CMOS) image sensor development and the application of neural networks for post-processing of CMOS and charge-coupled device (CCD) image data to achieve sub-pixel resolution (thus $super$-$resolution$). The combination of novel CMOS pixel designs and data-enabled image post-processing provides a promising path towards ultrafast high-resolution multi-modal radiographic imaging and tomography applications.
{"title":"Ultrafast CMOS image sensors and data-enabled super-resolution for multimodal radiographic imaging and tomography","authors":"Zhehui Wang, Xin Yue, Shanny Lin, Wenting Li, B. Wolfe, S. Clayton, M. Makela, Chris Morris, S. Spannagel, E. Ramberg, J. Estrada, Hao Zhu, Jifeng Liu, E. Fossum","doi":"10.22323/1.420.0041","DOIUrl":"https://doi.org/10.22323/1.420.0041","url":null,"abstract":"We summarize recent progress in ultrafast Complementary Metal Oxide Semiconductor (CMOS) image sensor development and the application of neural networks for post-processing of CMOS and charge-coupled device (CCD) image data to achieve sub-pixel resolution (thus $super$-$resolution$). The combination of novel CMOS pixel designs and data-enabled image post-processing provides a promising path towards ultrafast high-resolution multi-modal radiographic imaging and tomography applications.","PeriodicalId":275608,"journal":{"name":"Proceedings of 10th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging — PoS(Pixel2022)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121739725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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