Pub Date : 2021-12-22DOI: 10.1109/IICM55040.2021.9730154
Maryam Shaveisi, P. Aliparast
A High Operating Temperature (HOT) design of MW/LWIR infrared xBn photodetector based on the HgCdTe/HgCdTe is very important. Because the operation temperature of the focal plane array (FPA) imagers is critical. In this paper, we present a theoretical study of HgCdTe-based nBn detectors at 300 Kelvin. The simulation results show that parameters such as mole fraction and the thickness of the barrier layer as well as doping of the absorber layer can be optimized for higher performance. The valence band offset in HgCdTe nBn detectors can be minimized by controlling above-mentioned parameters. Evaluation of the simulation results in a temperature of 300 Kelvin and a voltage of -0.3Volts prove that with increasing doping concentration of the absorber layer, the dark current increases about %93.23. Also, the dark current decreases approximately %95.07 by changing the mole fraction of Cd in the Hgl-xCdxTe alloy. Therefore, the simulation results indicate that the dark current has significantly decreased with increasing the “x” mole fraction of the barrier layer and decreasing the doping of the absorber layer.
{"title":"Dark Current Evaluation in HgCdTe-based nBn Infrared Detectors","authors":"Maryam Shaveisi, P. Aliparast","doi":"10.1109/IICM55040.2021.9730154","DOIUrl":"https://doi.org/10.1109/IICM55040.2021.9730154","url":null,"abstract":"A High Operating Temperature (HOT) design of MW/LWIR infrared xBn photodetector based on the HgCdTe/HgCdTe is very important. Because the operation temperature of the focal plane array (FPA) imagers is critical. In this paper, we present a theoretical study of HgCdTe-based nBn detectors at 300 Kelvin. The simulation results show that parameters such as mole fraction and the thickness of the barrier layer as well as doping of the absorber layer can be optimized for higher performance. The valence band offset in HgCdTe nBn detectors can be minimized by controlling above-mentioned parameters. Evaluation of the simulation results in a temperature of 300 Kelvin and a voltage of -0.3Volts prove that with increasing doping concentration of the absorber layer, the dark current increases about %93.23. Also, the dark current decreases approximately %95.07 by changing the mole fraction of Cd in the Hgl-xCdxTe alloy. Therefore, the simulation results indicate that the dark current has significantly decreased with increasing the “x” mole fraction of the barrier layer and decreasing the doping of the absorber layer.","PeriodicalId":299499,"journal":{"name":"2021 Iranian International Conference on Microelectronics (IICM)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132677921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-22DOI: 10.1109/IICM55040.2021.9730420
M. B. Mohammadzadeh Shamloo, S. Darbari, Y. Abdi
Since the last decade, organic-inorganic hybrid halide perovskites (OIHPs) have been promising materials due to their extraordinary properties for a wide variety of optical applications. Herein, 2D Ruddlesden-Popper $text{BA}_{2}text{MAPb}_{2}mathrm{I}_{7}$ perovskite was synthesized using a two-step solution process. $text{BA}_{2}text{MAPb}_{2}mathrm{I}_{7}/text{Si}$ heterojunction was prepared by a one-step spin-coating method onto a p-type silicon substrate. XRD, absorption, and photoluminescence analyses characterized perovskite. The photoelectric properties of the detector were studied by conducting current-voltage (I-V) and current-time (I-T) measurements with and without illumination. The above photodetector showed the highest 90mA/W Responsivity along with $1.87times 10^{10}$ Jones detectivity. This work can promote further investigations into next-generation integrated photodetectors by direct integration of perovskite/silicon heterojunction.
{"title":"Sensitive Photodetector Based on Organic Inorganic Two-Dimentional Perovskite/Silicon Hybrid Heterostructure","authors":"M. B. Mohammadzadeh Shamloo, S. Darbari, Y. Abdi","doi":"10.1109/IICM55040.2021.9730420","DOIUrl":"https://doi.org/10.1109/IICM55040.2021.9730420","url":null,"abstract":"Since the last decade, organic-inorganic hybrid halide perovskites (OIHPs) have been promising materials due to their extraordinary properties for a wide variety of optical applications. Herein, 2D Ruddlesden-Popper $text{BA}_{2}text{MAPb}_{2}mathrm{I}_{7}$ perovskite was synthesized using a two-step solution process. $text{BA}_{2}text{MAPb}_{2}mathrm{I}_{7}/text{Si}$ heterojunction was prepared by a one-step spin-coating method onto a p-type silicon substrate. XRD, absorption, and photoluminescence analyses characterized perovskite. The photoelectric properties of the detector were studied by conducting current-voltage (I-V) and current-time (I-T) measurements with and without illumination. The above photodetector showed the highest 90mA/W Responsivity along with $1.87times 10^{10}$ Jones detectivity. This work can promote further investigations into next-generation integrated photodetectors by direct integration of perovskite/silicon heterojunction.","PeriodicalId":299499,"journal":{"name":"2021 Iranian International Conference on Microelectronics (IICM)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125413294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-22DOI: 10.1109/IICM55040.2021.9730240
M. Rashtian, Hasti Sasani, Ali Najd, Negin Baravardeh
In this paper, to achieve a high slew rate (SR) Op-Amp, a new compensation method for a fully differential two-stage operational transconductance amplifier (OTA) is presented. The proposed technique adds a left half-plane (LHP) zero to the first stage of the two-stage class A-AB using a nulling resistor with a series compensating capacitor, improving the stability of the closed-loop configuration. Also, active compensation has been used, which also leads to an increase in gain. Thus, compensation is done with a smaller capacitor, and the operational amplifier slew rate is increased. The output stage is an AB amplifier class, and floating gate MOSFET is used as a large resistor in the second stage. The value of the load capacitor is assumed to 20 pF. The proposed circuit is simulated by HSPICE with 180 nm 3.3V CMOS technology. Simulation results show that the gain and average slew rate of the proposed operational amplifier is 94.2 dB and 12.6 $mathrm{V}/mumathrm{s}$, respectively. However, the gain and average slew rate of the previous class A-AB operational amplifier is respectively 89 dB and 3.95 $mathrm{V}/mumathrm{s}$ in the same power consumption (0.33 mW) and load capacitor.
{"title":"High Slew Rate Op-Amp Using LHP Zeroes","authors":"M. Rashtian, Hasti Sasani, Ali Najd, Negin Baravardeh","doi":"10.1109/IICM55040.2021.9730240","DOIUrl":"https://doi.org/10.1109/IICM55040.2021.9730240","url":null,"abstract":"In this paper, to achieve a high slew rate (SR) Op-Amp, a new compensation method for a fully differential two-stage operational transconductance amplifier (OTA) is presented. The proposed technique adds a left half-plane (LHP) zero to the first stage of the two-stage class A-AB using a nulling resistor with a series compensating capacitor, improving the stability of the closed-loop configuration. Also, active compensation has been used, which also leads to an increase in gain. Thus, compensation is done with a smaller capacitor, and the operational amplifier slew rate is increased. The output stage is an AB amplifier class, and floating gate MOSFET is used as a large resistor in the second stage. The value of the load capacitor is assumed to 20 pF. The proposed circuit is simulated by HSPICE with 180 nm 3.3V CMOS technology. Simulation results show that the gain and average slew rate of the proposed operational amplifier is 94.2 dB and 12.6 $mathrm{V}/mumathrm{s}$, respectively. However, the gain and average slew rate of the previous class A-AB operational amplifier is respectively 89 dB and 3.95 $mathrm{V}/mumathrm{s}$ in the same power consumption (0.33 mW) and load capacitor.","PeriodicalId":299499,"journal":{"name":"2021 Iranian International Conference on Microelectronics (IICM)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121777849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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