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The Anneal Temperature Effect on the BTO and NZFO Flims and Their Capacitance - Inductance Integrated Device 退火温度对BTO和NZFO薄膜及其电容电感集成器件的影响
Pub Date : 2019-10-31 DOI: 10.30564/ssid.v1i1.606
Zhen-zhu Zheng, Yuhao Shi, Xinyu Liang, Chunqing Wang
In this paper, a novel capacitor-inductor integrated structure was proposed. The dielectric material BaTiO3 (BTO) and ferromagnetic material Ni0.5Zn0.5Fe2O4 (NZFO) was prepared by sol-gel method. Phase composition and morphology of the thin films were characterized by XRD, SEM and AFM. The effect of annealing temperature on film crystallinity, surface morphology, dielectric properties and ferromagnetism were investigated. When the annealing temperature was 700 °C, the BTO film and the NZFO film got the better dielectric properties and ferromagnetic properties. Then the BTO thin film was spin-coated on the substrate, and the NZFO thin film was in-situ sintered on the BTO thin film. The composite film possessed both ferromagnetism and dielectric properties. Finally, an inductive coil was fabricated on the BTO/NZFO composite film to produce a capacitance and inductance integrated device.
本文提出了一种新型的电容-电感集成结构。采用溶胶-凝胶法制备了介电材料BaTiO3 (BTO)和铁磁材料Ni0.5Zn0.5Fe2O4 (NZFO)。采用XRD、SEM和AFM对薄膜的相组成和形貌进行了表征。研究了退火温度对薄膜结晶度、表面形貌、介电性能和铁磁性的影响。当退火温度为700℃时,BTO膜和NZFO膜具有较好的介电性能和铁磁性能。然后将BTO薄膜自旋涂覆在衬底上,将NZFO薄膜原位烧结在BTO薄膜上。复合膜具有铁磁性和介电性能。最后,在BTO/NZFO复合薄膜上制作电感线圈,制成电容电感集成器件。
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引用次数: 0
A Foreword from the Editor-in-Chief 总编辑的前言
Pub Date : 2019-10-31 DOI: 10.30564/ssid.v1i1.1330
K. Vasudevan
Welcome to the inaugral issue of Semiconductor Science and Information Devices.
欢迎来到《半导体科学与信息器件》创刊号。
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引用次数: 0
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Semiconductor Science and Information Devices
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