Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316509
Hyuk-jae Lee, Seok Lee, D. Woo, Taikjin Lee, J. H. Kim
We analytically solve the nonlinear wave equation of the beam, which travels through the nonlinear Kerr medium. The tanh function method, a powerful method solving the traveling wave equation, is applied to the self-guiding light.
{"title":"Analytic solution of the nonlinear equation","authors":"Hyuk-jae Lee, Seok Lee, D. Woo, Taikjin Lee, J. H. Kim","doi":"10.1109/NUSOD.2012.6316509","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316509","url":null,"abstract":"We analytically solve the nonlinear wave equation of the beam, which travels through the nonlinear Kerr medium. The tanh function method, a powerful method solving the traveling wave equation, is applied to the self-guiding light.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125832397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316530
H. Nihei, A. Okamoto
We have optimized the optical design parameters of a qubit composed of excited states of an atom embedded in photonic crystals for operating rotation gates, using the coherent control of spontaneous emission from the atom.
{"title":"Optical design of a qubit embedded in photonic crystals for rotation gate operations","authors":"H. Nihei, A. Okamoto","doi":"10.1109/NUSOD.2012.6316530","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316530","url":null,"abstract":"We have optimized the optical design parameters of a qubit composed of excited states of an atom embedded in photonic crystals for operating rotation gates, using the coherent control of spontaneous emission from the atom.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133736100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316516
G. H. Li, X. Wu, Y. Jiang, C. Shao, L. J. Huang, X. Chen, W. D. Hu, W. Lu
We present an infrared perfect absorber which combines gold nanobars and a photonic microcavity. By adjusting the structural geometry, this device is utilized for refractive index sensing. For proper designed structural parameters, it can yield more than 99% absorbance in the near-infrared frequency regime. Our work directly investigate the effect of geometry on sensing performance and it can sever as a model of coupling between localized surface plasmon within nanoparticles and propagating surface plasmon along planar metal layer for sensing applications with a perfect absorber.
{"title":"The improvement of figure of merit with infrared perfect absorber for plasmonic resonance sensing","authors":"G. H. Li, X. Wu, Y. Jiang, C. Shao, L. J. Huang, X. Chen, W. D. Hu, W. Lu","doi":"10.1109/NUSOD.2012.6316516","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316516","url":null,"abstract":"We present an infrared perfect absorber which combines gold nanobars and a photonic microcavity. By adjusting the structural geometry, this device is utilized for refractive index sensing. For proper designed structural parameters, it can yield more than 99% absorbance in the near-infrared frequency regime. Our work directly investigate the effect of geometry on sensing performance and it can sever as a model of coupling between localized surface plasmon within nanoparticles and propagating surface plasmon along planar metal layer for sensing applications with a perfect absorber.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114062057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316526
Chaoyu He, C. X. Zhang, H. Xiao, L. Sun, J. Zhong
The structures, stability and electronic properties of some novel two- or four-segments BN/C nanotubes are systematically investigated using the density functional theory based first-principle calculations. Our calculations reveal that the structures, stability and electronic properties of these hybridized nanotubes are dependent on their diameters, compositions and hybridizing manners.
{"title":"Structures, stability and electronic properties of two- or four-segment BN/C nanotubes","authors":"Chaoyu He, C. X. Zhang, H. Xiao, L. Sun, J. Zhong","doi":"10.1109/NUSOD.2012.6316526","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316526","url":null,"abstract":"The structures, stability and electronic properties of some novel two- or four-segments BN/C nanotubes are systematically investigated using the density functional theory based first-principle calculations. Our calculations reveal that the structures, stability and electronic properties of these hybridized nanotubes are dependent on their diameters, compositions and hybridizing manners.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115010748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316548
M. G. Noppe
A new formula for line form inside and outside laser is derived. The linewidth is calculated on the basis of the derived formula for the line form. Our simulation of the linewidth for three Fabry-Perot lasers allows explaining all known to us experimental measurements of semiconductor laser natural linewidth.
{"title":"On the line form and natural linewidth; Simulation and interpretation of experiments","authors":"M. G. Noppe","doi":"10.1109/NUSOD.2012.6316548","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316548","url":null,"abstract":"A new formula for line form inside and outside laser is derived. The linewidth is calculated on the basis of the derived formula for the line form. Our simulation of the linewidth for three Fabry-Perot lasers allows explaining all known to us experimental measurements of semiconductor laser natural linewidth.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123454018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316507
J. Wen, Q. Weng, L. Li, D. Xiong
Plateau-like behavior and multi-peak of the I-V curves of an AlAs/GaAs/AlAs double-barrier resonant tunneling diode combined with a layer of InAs QDs (QD-RTD) are simulated. Our simulation results show that the coupling between the energy level in the emitter QW (QD) and that in the central quantum well is the key point in understanding the origin of the I-V multi-peak and plateau-like structure. The embedded designed QD layer at the emitter spacer can enhance this effect. The effects of device temperature on the I-V characteristics are obtained. Our results provide the physical basis for understanding and utilizing the plateau-like behavior of I-V curves in designing resonant tunneling devices.
{"title":"Simulation of resonant tunneling structures: Origin of the I-V multi-peak and plateau-like behaviour","authors":"J. Wen, Q. Weng, L. Li, D. Xiong","doi":"10.1109/NUSOD.2012.6316507","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316507","url":null,"abstract":"Plateau-like behavior and multi-peak of the I-V curves of an AlAs/GaAs/AlAs double-barrier resonant tunneling diode combined with a layer of InAs QDs (QD-RTD) are simulated. Our simulation results show that the coupling between the energy level in the emitter QW (QD) and that in the central quantum well is the key point in understanding the origin of the I-V multi-peak and plateau-like structure. The embedded designed QD layer at the emitter spacer can enhance this effect. The effects of device temperature on the I-V characteristics are obtained. Our results provide the physical basis for understanding and utilizing the plateau-like behavior of I-V curves in designing resonant tunneling devices.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123518085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316538
H. Cui, N. Tang, Zhong Tang
The changed polarity of transient photovoltage (TPA) from negative to positive induced by ultra fast lasers illumination is studied in the HgCdTe p-n junction photovoltage detector. The negative photovoltaic-response decrease obviously and even disappear by blocking the laser beam with an aperture to limit the illumination area of the linear array detectors. A combined theoretical model of p-n junction and Schottky contact can explain this new phenomenon well. Using the TPA technique and the combined model, the characters of p-n junction and Schottky contact will be distinguished. Therefore, it could be used in characterizing the Ohmic contact of the detectors electrodes, and its sensitivity is expected to be much higher than the steady states methods.
{"title":"The investigation of the transient photovoltage in HgCdTe infrated photovoltaic detectors","authors":"H. Cui, N. Tang, Zhong Tang","doi":"10.1109/NUSOD.2012.6316538","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316538","url":null,"abstract":"The changed polarity of transient photovoltage (TPA) from negative to positive induced by ultra fast lasers illumination is studied in the HgCdTe p-n junction photovoltage detector. The negative photovoltaic-response decrease obviously and even disappear by blocking the laser beam with an aperture to limit the illumination area of the linear array detectors. A combined theoretical model of p-n junction and Schottky contact can explain this new phenomenon well. Using the TPA technique and the combined model, the characters of p-n junction and Schottky contact will be distinguished. Therefore, it could be used in characterizing the Ohmic contact of the detectors electrodes, and its sensitivity is expected to be much higher than the steady states methods.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123537997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316517
Q. Yao, Y. Z. Huang, X. Lv, J. D. Lin, L. Zou
Influences of surrounded metallic layers (Au, Al, Ag, Cu, and Ti) on whispering-gallery modes (WGMs) are numerically investigated by solving eigenvalue equation for multiple-layer two dimensional circular microresonators. For TM modes, metal layer can provide good optical confinement as its thickness is larger than 0.03 μm. For TE modes, an isolation layer should be introduced to reduce the dissipation loss of metallic layers. Al and Ag layers can provide better optical confinement than Au layer, and Ti layer which is usually a layer of p-electrode will result in a large dissipation loss.
{"title":"Influence of surrounded metallic layers on whispering-gallery modes in circular microresonators","authors":"Q. Yao, Y. Z. Huang, X. Lv, J. D. Lin, L. Zou","doi":"10.1109/NUSOD.2012.6316517","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316517","url":null,"abstract":"Influences of surrounded metallic layers (Au, Al, Ag, Cu, and Ti) on whispering-gallery modes (WGMs) are numerically investigated by solving eigenvalue equation for multiple-layer two dimensional circular microresonators. For TM modes, metal layer can provide good optical confinement as its thickness is larger than 0.03 μm. For TE modes, an isolation layer should be introduced to reduce the dissipation loss of metallic layers. Al and Ag layers can provide better optical confinement than Au layer, and Ti layer which is usually a layer of p-electrode will result in a large dissipation loss.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115352398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316559
Xiangwei Jiang, H. Deng, Shu-Shen Li, Jun-Wei Luo, Lin-wang Wang
We have investigated the quantum mechanical effects in quantum dots and nano size silicon MOSFETs using empirical psedupotential Hamiltonian model and linear combination of bulk band (LCBB) method. Unlike the traditional effective mass approximation and kp method, our approach uses a full zone expansion to represent the electronic state. This method provides a very fast yet accurate way to simulate million atom nano structures and nano devices even on a single processor personal computer.
{"title":"Quantum mechanical simulations of nano-structures and nano-devices","authors":"Xiangwei Jiang, H. Deng, Shu-Shen Li, Jun-Wei Luo, Lin-wang Wang","doi":"10.1109/NUSOD.2012.6316559","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316559","url":null,"abstract":"We have investigated the quantum mechanical effects in quantum dots and nano size silicon MOSFETs using empirical psedupotential Hamiltonian model and linear combination of bulk band (LCBB) method. Unlike the traditional effective mass approximation and kp method, our approach uses a full zone expansion to represent the electronic state. This method provides a very fast yet accurate way to simulate million atom nano structures and nano devices even on a single processor personal computer.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124295856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316551
V. Afshar, Wenqi Zhang, M. A. Lohe, T. Monro
High index subwavelength waveguides form a new platform for highly nonlinear photonic devices. This paper reviews the recent progress in the theory of nonlinear pulse propagation in these waveguides and highlights the opportunities that these waveguides have opened up in terms of active photonic devices.
{"title":"Recent progress in theory of nonlinear pulse propagation in subwavelength waveguides","authors":"V. Afshar, Wenqi Zhang, M. A. Lohe, T. Monro","doi":"10.1109/NUSOD.2012.6316551","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316551","url":null,"abstract":"High index subwavelength waveguides form a new platform for highly nonlinear photonic devices. This paper reviews the recent progress in the theory of nonlinear pulse propagation in these waveguides and highlights the opportunities that these waveguides have opened up in terms of active photonic devices.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128869155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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