Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316537
Xiaojie Sun
A low noise transimpedance amplifier (TIA) is used in a wide band PIN (Positive Intrinsic Negative) laser detector arrays to transform the photo current produced by an infrared interfering laser power to an output voltage with a specified amplitude and frequency response. In this paper we consider the specifications of a PIN detector array coupled with a TIA circuit. Then the following issues that influence high precision calculation results will be investigated: low noise performance of the detector array and TIA pre-amplifier; fluctuation effects of amplitude caused by frequency modulation interfering signal; photosensitive area (PA) of the detector and physical distance between detectors. We find that noise performance related with signal to noise ratio (SNR) defines the minimum calculation error. And PA related with sensitivity has influence on junction capacitance and amplitude fluctuation. Meanwhile bias circuit mode related with dark current also influence amplitude response. Based on these issues, a PIN detector array pair is constructed of five sensors arranged in cross. The center response wavelength of the detector array is around 850 nm according to the requirement of the referential laser interferometer.
{"title":"Optimization of detector arrays and circuits targeted for precision calculation in infrared laser interferometer","authors":"Xiaojie Sun","doi":"10.1109/NUSOD.2012.6316537","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316537","url":null,"abstract":"A low noise transimpedance amplifier (TIA) is used in a wide band PIN (Positive Intrinsic Negative) laser detector arrays to transform the photo current produced by an infrared interfering laser power to an output voltage with a specified amplitude and frequency response. In this paper we consider the specifications of a PIN detector array coupled with a TIA circuit. Then the following issues that influence high precision calculation results will be investigated: low noise performance of the detector array and TIA pre-amplifier; fluctuation effects of amplitude caused by frequency modulation interfering signal; photosensitive area (PA) of the detector and physical distance between detectors. We find that noise performance related with signal to noise ratio (SNR) defines the minimum calculation error. And PA related with sensitivity has influence on junction capacitance and amplitude fluctuation. Meanwhile bias circuit mode related with dark current also influence amplitude response. Based on these issues, a PIN detector array pair is constructed of five sensors arranged in cross. The center response wavelength of the detector array is around 850 nm according to the requirement of the referential laser interferometer.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"171 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127867215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316497
M. B. Yucel, O. A. Kaya, A. Çicek, B. Ulug
Polarization-independent splitting of self-collimated transverse-electric and transverse-magnetic polarized waves in a two-dimensional square photonic crystal are demonstrated. The beam splitting is facilitated by the existence of sharp edges in flat equifrequency contours.
{"title":"Polarization-independent self-collimated beam splitting in two-dimensional photonic crystals","authors":"M. B. Yucel, O. A. Kaya, A. Çicek, B. Ulug","doi":"10.1109/NUSOD.2012.6316497","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316497","url":null,"abstract":"Polarization-independent splitting of self-collimated transverse-electric and transverse-magnetic polarized waves in a two-dimensional square photonic crystal are demonstrated. The beam splitting is facilitated by the existence of sharp edges in flat equifrequency contours.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126862773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316540
B. Min, S. Suckow, U. Yusufoglu, T. Pletzer, H. Kurz
We have investigated the potential to accelerate three-dimensional numeric simulation of silicon solar cell using thread parallelism. The device simulated is a rear side passivated cell with rear point contacts (PERC). The optical and electrical behaviour of the device was simulated with Sentaurus Device (formerly dessis). We show that the simulation run-time on a four socket Opteron 6168 machine is reduced down to 6% compared to the run-time without thread parallelism. Furthermore, limits of time reduction by varying the number of threads up to 48 are studied. Thereby, the number of threads for the optimum use of the hardware resources is determined.
{"title":"Acceleration of 3D numerical simulation of silicon solar cell using thread parallelism","authors":"B. Min, S. Suckow, U. Yusufoglu, T. Pletzer, H. Kurz","doi":"10.1109/NUSOD.2012.6316540","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316540","url":null,"abstract":"We have investigated the potential to accelerate three-dimensional numeric simulation of silicon solar cell using thread parallelism. The device simulated is a rear side passivated cell with rear point contacts (PERC). The optical and electrical behaviour of the device was simulated with Sentaurus Device (formerly dessis). We show that the simulation run-time on a four socket Opteron 6168 machine is reduced down to 6% compared to the run-time without thread parallelism. Furthermore, limits of time reduction by varying the number of threads up to 48 are studied. Thereby, the number of threads for the optimum use of the hardware resources is determined.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134599306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316496
H. Cui, N. Tang, Zhong Tang
This paper presents an experimental study of minority carrier lifetime and recombination mechanisms in HgCdTe photodiode. The excitation light source is a wavelength-tunable pulsed infrared laser. A constant background illumination has been introduced to minimize the effect of the junction equivalent capacitor and the equivalent series resistance. The slow decay of the photo-generated voltage is recorded by a storage oscilloscope. By fitting the exponentially decay curve, the time constant has been obtained which is regarded as the photo-generated minority carrier lifetime of the HgCdTe photodiode. The experimental results show that the carrier lifetime is in the range of 18 ~ 407 ns at 77 K for the measured detectors of four compositions. It was found that the Auger recombination process is more effective for low Cd composition while the radiative recombination process became more important for high compensated materials. The Shockley-Read-Hall (SRH) recombination processes could not be ignored for all Cd composition.
{"title":"Experimental determination of minority carrier lifetime and recombination mechanisms in MCT photovoltaic detectors","authors":"H. Cui, N. Tang, Zhong Tang","doi":"10.1109/NUSOD.2012.6316496","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316496","url":null,"abstract":"This paper presents an experimental study of minority carrier lifetime and recombination mechanisms in HgCdTe photodiode. The excitation light source is a wavelength-tunable pulsed infrared laser. A constant background illumination has been introduced to minimize the effect of the junction equivalent capacitor and the equivalent series resistance. The slow decay of the photo-generated voltage is recorded by a storage oscilloscope. By fitting the exponentially decay curve, the time constant has been obtained which is regarded as the photo-generated minority carrier lifetime of the HgCdTe photodiode. The experimental results show that the carrier lifetime is in the range of 18 ~ 407 ns at 77 K for the measured detectors of four compositions. It was found that the Auger recombination process is more effective for low Cd composition while the radiative recombination process became more important for high compensated materials. The Shockley-Read-Hall (SRH) recombination processes could not be ignored for all Cd composition.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133438348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316518
Zhihong Chen, Chun Jiang
We design a structure consisting of Ag strip pair arrays embedded in the background material to achieve localized surface plasmon resonance. Numerical simulation shows that one of the transmission dips of the structure is very sensitive to the background materials, which can be used to achieve high performance sensors.
{"title":"Surface plasmon resonance for sensing","authors":"Zhihong Chen, Chun Jiang","doi":"10.1109/NUSOD.2012.6316518","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316518","url":null,"abstract":"We design a structure consisting of Ag strip pair arrays embedded in the background material to achieve localized surface plasmon resonance. Numerical simulation shows that one of the transmission dips of the structure is very sensitive to the background materials, which can be used to achieve high performance sensors.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123464247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316535
X. Hong, H. Lu, D. B. Zhang
The structure characteristics of typical n+-on-p HgCdTe infrared detector have been studied by laser beam-induced current (LBIC). The dependence of LBIC on laser wavelength, junction depth and localized leakage has been presented. The spreading length of minority carrier of p-type region (Lsp) is extracted by the exponential decay fitting of the curve of LBIC. It is found that the peak magnitude of LBIC and junction depth approximates to a linear relationship for practical values of device fabrication. The Lsp monotonously increases with junction depth. A notable shift of LBIC profile is observed when localized leakage exists. This provides a powerful explain for LBIC applying to characterize the structure and process uniformity of HgCdTe infrared detector.
{"title":"Study on the structure characteristics of HgCdTe infrared detector using laser beam-induced current","authors":"X. Hong, H. Lu, D. B. Zhang","doi":"10.1109/NUSOD.2012.6316535","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316535","url":null,"abstract":"The structure characteristics of typical n+-on-p HgCdTe infrared detector have been studied by laser beam-induced current (LBIC). The dependence of LBIC on laser wavelength, junction depth and localized leakage has been presented. The spreading length of minority carrier of p-type region (Lsp) is extracted by the exponential decay fitting of the curve of LBIC. It is found that the peak magnitude of LBIC and junction depth approximates to a linear relationship for practical values of device fabrication. The Lsp monotonously increases with junction depth. A notable shift of LBIC profile is observed when localized leakage exists. This provides a powerful explain for LBIC applying to characterize the structure and process uniformity of HgCdTe infrared detector.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120961783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316542
Stanko Tomić
Intermediate band solar cells (IBSC) have emerged as an alternative design for third generation solar cells that could lead to dramatical improvements of the power conversion efficiencies. For this concept to work the intermediate band (IB) has to be located in the forbidden energy gap of the barrier material and to be separated by zero density of states from the valence and conduction band of the barrier material. We have demonstrated that a k · p multiband theory with periodic boundary conditions can easily be applied to predict electronic and absorption characteristics, as well as radiative and non-radiative carrier life-times between IB induced by semiconductor quantum dot (QD) arrays. We have identified that the most detrimental effect that might affect proper operation of the IBSC is caused by very fast, ~ps, Auger electron cooling non-radiative process. We discuss possible QD array designs that can suppress fast Auger electron cooling.
{"title":"Radiative and non-radiative processes in intermediate band solar cells","authors":"Stanko Tomić","doi":"10.1109/NUSOD.2012.6316542","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316542","url":null,"abstract":"Intermediate band solar cells (IBSC) have emerged as an alternative design for third generation solar cells that could lead to dramatical improvements of the power conversion efficiencies. For this concept to work the intermediate band (IB) has to be located in the forbidden energy gap of the barrier material and to be separated by zero density of states from the valence and conduction band of the barrier material. We have demonstrated that a k · p multiband theory with periodic boundary conditions can easily be applied to predict electronic and absorption characteristics, as well as radiative and non-radiative carrier life-times between IB induced by semiconductor quantum dot (QD) arrays. We have identified that the most detrimental effect that might affect proper operation of the IBSC is caused by very fast, ~ps, Auger electron cooling non-radiative process. We discuss possible QD array designs that can suppress fast Auger electron cooling.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124084446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316503
X. Yang, Y. S. Liu, X. Jiang
The numerical simulations of the contribution of GaAs/AlGaAs multiple quantum well and superlattice to photocurrent in solar cells are presented. Effects of thickness of barrier and period on the extended and localized states, photocurrent have been investigated. Running wave method of calculation on the extended states of the two structures are adopt and compared.
{"title":"Running wave form extended states in charactering the photocurrent of multiple quantum well and superlattice structured GaAs/AlGaAs solar cells","authors":"X. Yang, Y. S. Liu, X. Jiang","doi":"10.1109/NUSOD.2012.6316503","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316503","url":null,"abstract":"The numerical simulations of the contribution of GaAs/AlGaAs multiple quantum well and superlattice to photocurrent in solar cells are presented. Effects of thickness of barrier and period on the extended and localized states, photocurrent have been investigated. Running wave method of calculation on the extended states of the two structures are adopt and compared.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114728537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316554
S. Schwarz, C. Schaeffer, A. Rahim, J. Bruns, K. Petermann
We present the design of an optical OFDM-demultiplexer for the separation of 8 sub-channels. Using simulations, we investigate the tolerance towards phase errors in the structure which could be realized as a planar lightwave circuit (PLC).
{"title":"All-optical discrete Fourier transform for OFDM demultiplexing and its sensitivity to phase errors","authors":"S. Schwarz, C. Schaeffer, A. Rahim, J. Bruns, K. Petermann","doi":"10.1109/NUSOD.2012.6316554","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316554","url":null,"abstract":"We present the design of an optical OFDM-demultiplexer for the separation of 8 sub-channels. Using simulations, we investigate the tolerance towards phase errors in the structure which could be realized as a planar lightwave circuit (PLC).","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125738279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-02DOI: 10.1109/NUSOD.2012.6316491
Lin Wang, Weida Hu, Xiaoshuang Chen, W. Lu
This paper displays the plasmon resonance phenomenon in single channel and double channel (DC) devices with varying dimensions in grating-gate period, slit and spacing between two channels in DC structures at terahertz domain. The results indicate that higher order plasmon can be excited in devices with longer period and narrow slit grating due to the enhanced coupling between plasmon and terahertz radiation. Splitting of plasmon resonance takes places in double channel device due to the hybridization between plasmons, which will improve the tunability of terahertz plasmonic device.
{"title":"The hybridization of plasmons in GaN-based two-dimensional channels","authors":"Lin Wang, Weida Hu, Xiaoshuang Chen, W. Lu","doi":"10.1109/NUSOD.2012.6316491","DOIUrl":"https://doi.org/10.1109/NUSOD.2012.6316491","url":null,"abstract":"This paper displays the plasmon resonance phenomenon in single channel and double channel (DC) devices with varying dimensions in grating-gate period, slit and spacing between two channels in DC structures at terahertz domain. The results indicate that higher order plasmon can be excited in devices with longer period and narrow slit grating due to the enhanced coupling between plasmon and terahertz radiation. Splitting of plasmon resonance takes places in double channel device due to the hybridization between plasmons, which will improve the tunability of terahertz plasmonic device.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"35 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126726251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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