Highly dispersed nanosized closed pores (nanovoids) are revealed to be effective to substantially enhance the thermoelectric performance of bulk sintered body of n-type Al-doped ZnO oxide, resulting in a dimensionless figure-of-merit of ZT = 0.65 at 1250 K. The nanovoid structure is built in a densely sintered Al-doped ZnO matrix by using combustible nanosized polymer particles as a void forming agent (VFA), the uniformity of the VFA distribution in the sintering mixture being greatly improved by employing planetary-type ball milling with high pulverizing capability. A combination of shortened mixing period and liquid mixing media enables us to prevent formation of oxygen-related defects in ZnO, and sintered samples thus obtained show the electrical conductivity (sigma) higher than that of those prepared with conventional ball milling. The sintered samples obtained in the present study also show the Seebeck coefficient (S) considerably larger than that of the control sample over the whole temperature range from 300 K to 1273 K, implying an enhancement of the thermopower possibly due to a carrier energy filtering effect by low-energy nanosized defects. Although a decrease in the thermal conductivity (kappa) is only of the same magnitude to that of the sigma values, the marked increase in both sigma and S gives rise to a significant enhancement of the power factor. With fairly suppressed kappa values, the nanovoid ZnO samples successfully attain a largest ZT value so far observed for n-type bulk oxide materials
{"title":"Enhanced Thermoelectric Performance of Nanostructured ZnO: A possibility of selective phonon scattering and carrier energy filtering by nanovoid structure","authors":"M. Ohtaki, R. Hayashi","doi":"10.1109/ICT.2006.331368","DOIUrl":"https://doi.org/10.1109/ICT.2006.331368","url":null,"abstract":"Highly dispersed nanosized closed pores (nanovoids) are revealed to be effective to substantially enhance the thermoelectric performance of bulk sintered body of n-type Al-doped ZnO oxide, resulting in a dimensionless figure-of-merit of ZT = 0.65 at 1250 K. The nanovoid structure is built in a densely sintered Al-doped ZnO matrix by using combustible nanosized polymer particles as a void forming agent (VFA), the uniformity of the VFA distribution in the sintering mixture being greatly improved by employing planetary-type ball milling with high pulverizing capability. A combination of shortened mixing period and liquid mixing media enables us to prevent formation of oxygen-related defects in ZnO, and sintered samples thus obtained show the electrical conductivity (sigma) higher than that of those prepared with conventional ball milling. The sintered samples obtained in the present study also show the Seebeck coefficient (S) considerably larger than that of the control sample over the whole temperature range from 300 K to 1273 K, implying an enhancement of the thermopower possibly due to a carrier energy filtering effect by low-energy nanosized defects. Although a decrease in the thermal conductivity (kappa) is only of the same magnitude to that of the sigma values, the marked increase in both sigma and S gives rise to a significant enhancement of the power factor. With fairly suppressed kappa values, the nanovoid ZnO samples successfully attain a largest ZT value so far observed for n-type bulk oxide materials","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122561276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Mavrokefalos, M. Pettes, S. Saha, F. Zhou, Li Shi
Theoretical studies have suggested that Bi-based and III-V nanowire structures may have high thermoelectric figure of merit (ZT). It was found in a previous measurement that the thermoelectric properties of individual electro-deposited bismuth telluride nanowires are largely influenced by the crystal structure including crystalline quality, chemical composition, doping concentration, and surface roughness, all of which cannot be controlled readily in various bottom-up nanowire synthesis method. We have developed a top-down fabrication process of suspended indium arsenide (InAs) nanowires. Based on nanolithography and reactive ion etching, the nanowires are patterned from an epitaxial thin film deposited by molecular beam epitaxy with well-controlled doping concentration, which can be determined from Hall measurement. The thermoelectric properties of these top-down patterned III-V nanowires have been characterized using a new design of a suspended microdevice. The new device allows for transmission electron microscopy and energy dispersive X-ray spectroscopy analysis of the same nanowire assembled on the microdevice so as to establish the structure-thermoelectric properties relationships. This paper reports the measured thermoelectric properties of a patterned InAs nanowire with a rectangular cross section of 150 nm in width and 40 nm thickness in a temperature range between 100 K and 400 K. The obtained Seebeck coefficient, thermal conductivity, electrical conductivity, and ZT are -57.2 muV/K, 4.11 W/m K, 1350 S/m, and 0.00032, respectively, at temperature 300 K
{"title":"Combined Thermoelectric and Structure Characterizations of Patterned Nanowires","authors":"A. Mavrokefalos, M. Pettes, S. Saha, F. Zhou, Li Shi","doi":"10.1109/ICT.2006.331358","DOIUrl":"https://doi.org/10.1109/ICT.2006.331358","url":null,"abstract":"Theoretical studies have suggested that Bi-based and III-V nanowire structures may have high thermoelectric figure of merit (ZT). It was found in a previous measurement that the thermoelectric properties of individual electro-deposited bismuth telluride nanowires are largely influenced by the crystal structure including crystalline quality, chemical composition, doping concentration, and surface roughness, all of which cannot be controlled readily in various bottom-up nanowire synthesis method. We have developed a top-down fabrication process of suspended indium arsenide (InAs) nanowires. Based on nanolithography and reactive ion etching, the nanowires are patterned from an epitaxial thin film deposited by molecular beam epitaxy with well-controlled doping concentration, which can be determined from Hall measurement. The thermoelectric properties of these top-down patterned III-V nanowires have been characterized using a new design of a suspended microdevice. The new device allows for transmission electron microscopy and energy dispersive X-ray spectroscopy analysis of the same nanowire assembled on the microdevice so as to establish the structure-thermoelectric properties relationships. This paper reports the measured thermoelectric properties of a patterned InAs nanowire with a rectangular cross section of 150 nm in width and 40 nm thickness in a temperature range between 100 K and 400 K. The obtained Seebeck coefficient, thermal conductivity, electrical conductivity, and ZT are -57.2 muV/K, 4.11 W/m K, 1350 S/m, and 0.00032, respectively, at temperature 300 K","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114526662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Ikeda, V. Ravi, L. A. Collins, S. Haile, G. J. Snyder
In analogy to recent demonstrations of enhanced thermoelectric properties in superlattice materials, composite structures with nanoscale features promise dramatic improvements in the figure of merit of thermoelectric materials. Fabrication of nanostructured thermoelectric materials via bulk synthesis is an attractive route for commercial applications. Nanometer scale lamellae of PbTe and Sb2 Te3 form when quenched eutectic PbTe-Sb2Te 3 melt is subsequently annealed. The lamellar spacing depends on the temperature and time of the anneal. The mechanism for the development of the nanostructures can be characterized by examining the fraction of material transformed as a function of anneal time. Preliminary analysis of the shape factor exponent reveals that the evolution of the nanostructured lamellae is likened to the thickening of very large plates. The coarsening of the lamellar spacing is also examined as a function of time
{"title":"Development of Nanostructures in Thermoelectric Pb-Te-Sb Alloys","authors":"T. Ikeda, V. Ravi, L. A. Collins, S. Haile, G. J. Snyder","doi":"10.1109/ICT.2006.331326","DOIUrl":"https://doi.org/10.1109/ICT.2006.331326","url":null,"abstract":"In analogy to recent demonstrations of enhanced thermoelectric properties in superlattice materials, composite structures with nanoscale features promise dramatic improvements in the figure of merit of thermoelectric materials. Fabrication of nanostructured thermoelectric materials via bulk synthesis is an attractive route for commercial applications. Nanometer scale lamellae of PbTe and Sb2 Te3 form when quenched eutectic PbTe-Sb2Te 3 melt is subsequently annealed. The lamellar spacing depends on the temperature and time of the anneal. The mechanism for the development of the nanostructures can be characterized by examining the fraction of material transformed as a function of anneal time. Preliminary analysis of the shape factor exponent reveals that the evolution of the nanostructured lamellae is likened to the thickening of very large plates. The coarsening of the lamellar spacing is also examined as a function of time","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"394 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132347990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The effects of scattering anisotropy caused by mass anisotropy on the thermoelectric figure of merit and Seebeck coefficient are investigated. The wave-vector-dependent relaxation time is considered to yield transport coefficients. The thermoelectric figure of merit parallel to the conduction layer of a material is shown to decrease as the anisotropy increases. The Seebeck coefficient is shown to be nearly, but not strictly, isotropic
{"title":"Mass anisotropy effects on the thermoelectric figure of merit and Seebeck coefficient","authors":"K. Ikeda, T. Yago, M. Matoba","doi":"10.1109/ICT.2006.331372","DOIUrl":"https://doi.org/10.1109/ICT.2006.331372","url":null,"abstract":"The effects of scattering anisotropy caused by mass anisotropy on the thermoelectric figure of merit and Seebeck coefficient are investigated. The wave-vector-dependent relaxation time is considered to yield transport coefficients. The thermoelectric figure of merit parallel to the conduction layer of a material is shown to decrease as the anisotropy increases. The Seebeck coefficient is shown to be nearly, but not strictly, isotropic","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129922706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Souma, M. Ohtaki, M. Shigeno, Y. Ohba, N. Nakamura, T. Shimozaki
A prototype of thermoelectric module using oxide materials has been successfully fabricated, and the power generation characteristics have been examined in the high temperature region around 773 K (500 degC). Twelve couples of sintered p-NaCo2O4 and n-ZnO materials were connected via silver conducting strips with a planer arrangement jointed by using a diffusion welding technique under 16 MPa at 1023 K in Ar. A maximum power output of 58 mW was achieved at a temperature condition of TH/TL = 839/377 K. The details of the power generation characteristics of the oxide module will be presented and the performance will be discussed with other oxide modules
{"title":"Fabrication and power generation characteristics of p-NaCo2O4/n-ZnO oxide thermoelectric modules","authors":"T. Souma, M. Ohtaki, M. Shigeno, Y. Ohba, N. Nakamura, T. Shimozaki","doi":"10.1109/ICT.2006.331386","DOIUrl":"https://doi.org/10.1109/ICT.2006.331386","url":null,"abstract":"A prototype of thermoelectric module using oxide materials has been successfully fabricated, and the power generation characteristics have been examined in the high temperature region around 773 K (500 degC). Twelve couples of sintered p-NaCo2O4 and n-ZnO materials were connected via silver conducting strips with a planer arrangement jointed by using a diffusion welding technique under 16 MPa at 1023 K in Ar. A maximum power output of 58 mW was achieved at a temperature condition of TH/TL = 839/377 K. The details of the power generation characteristics of the oxide module will be presented and the performance will be discussed with other oxide modules","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123568114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Paschen, A. Bentien, S. Budnyk, A. Strydom, Y. Grin, F. Steglich
Both in the class of strongly correlated electron systems and in the class of cage compounds representatives with appealing thermoelectric properties exist. The former ones are characterized by large thermopower values, the latter ones show low and "glass-like" phonon thermal conductivities. The combination of both properties within a single compound, however, has proven challenging. We review some of our recent investigations on various cage compounds containing rare-earth elements as guest atoms and discuss their potential for thermoelectric applications. Strong correlation effects have been observed in a number of cage compounds containing Ce. While the thermoelectric performance of some of these is promising, further optimization will be needed to bring these materials to practical use
{"title":"Strongly correlated cage compounds for thermoelectric applications?","authors":"S. Paschen, A. Bentien, S. Budnyk, A. Strydom, Y. Grin, F. Steglich","doi":"10.1109/ICT.2006.331325","DOIUrl":"https://doi.org/10.1109/ICT.2006.331325","url":null,"abstract":"Both in the class of strongly correlated electron systems and in the class of cage compounds representatives with appealing thermoelectric properties exist. The former ones are characterized by large thermopower values, the latter ones show low and \"glass-like\" phonon thermal conductivities. The combination of both properties within a single compound, however, has proven challenging. We review some of our recent investigations on various cage compounds containing rare-earth elements as guest atoms and discuss their potential for thermoelectric applications. Strong correlation effects have been observed in a number of cage compounds containing Ce. While the thermoelectric performance of some of these is promising, further optimization will be needed to bring these materials to practical use","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128778368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
G. Savelli, M. Plissonnier, J. Bablet, C. Salvi, J. Fournier
In recent years, microelectronics has contributed to the development of complex and varied technologies. Many of these technologies can be applied successfully to realize Seebeck micro generators: photolithography and deposition methods allow the elaboration of thin thermoelectric structures at the micro-scale level. Our goal is to scavenge energy by developing a miniature power source for operating electronic components. First Bi and Sb micro-devices on glass substrate have been manufactured with an area of 1cm2 including more than one hundred junctions. We have optimized each step of the manufacturing process: photolithography, deposition process, annealing conditions and metallic connections. Three different device structures have been realized with differing micro-line dimensions. Each device performance will be reviewed and discussed as a function of their design structure
{"title":"Realization and optimization of thermoelectric devices using bismuth and antimony materials","authors":"G. Savelli, M. Plissonnier, J. Bablet, C. Salvi, J. Fournier","doi":"10.1109/ICT.2006.331280","DOIUrl":"https://doi.org/10.1109/ICT.2006.331280","url":null,"abstract":"In recent years, microelectronics has contributed to the development of complex and varied technologies. Many of these technologies can be applied successfully to realize Seebeck micro generators: photolithography and deposition methods allow the elaboration of thin thermoelectric structures at the micro-scale level. Our goal is to scavenge energy by developing a miniature power source for operating electronic components. First Bi and Sb micro-devices on glass substrate have been manufactured with an area of 1cm2 including more than one hundred junctions. We have optimized each step of the manufacturing process: photolithography, deposition process, annealing conditions and metallic connections. Three different device structures have been realized with differing micro-line dimensions. Each device performance will be reviewed and discussed as a function of their design structure","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126444409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Stiewe, Z. He, D. Platzek, E. Muller, S. Li, M. Toprak, M. Muhammed
Nanostructuring of unfilled CoSb3 Skutterudites has been successful in reducing the thermal conductivity of these materials [Toprak, et al., 2004]. First measurements on a mixture of the Skutterudite and an inert ceramic with particle sizes in the nanometer range have shown promising results for a further reduced thermal conductivity by decorating the grain boundaries of the thermoelectric material [Stiewe, et al., 2006]. A strong influence of additional phases like CoSb2 and pure Sb in the samples has been encountered, too. Therefore in the present work a more detailed investigation of the effect of phase purity and grain size by an intentional variation of the phase composition is presented. The impact of a variation in the amount of the ceramics addition and of the phase composition on the thermoelectric properties (kappa, sigma, S) of pure and doped CoSb 3, respectively, are studied and the results are discussed with respect to an enhancement of the thermoelectric figure of merit
未填充CoSb3 Skutterudites的纳米结构已经成功地降低了这些材料的导热性[Toprak, et al.， 2004]。首先对颗粒尺寸在纳米范围内的菱角矿和惰性陶瓷的混合物进行了测量，结果表明，通过装饰热电材料的晶界，进一步降低了导热系数[Stiewe等，2006]。在样品中还遇到了coss2和纯Sb等附加相的强烈影响。因此，在本工作中，更详细地研究了相纯度和晶粒尺寸的影响，通过有意改变相组成。研究了陶瓷添加量的变化和相组成的变化对纯coss3和掺杂coss3的热电性能(kappa, sigma, S)的影响，并就热电优值的提高对结果进行了讨论
{"title":"Influence of Phase Composition on the Thermoelectric Properties of Nanostructured Skutterudite and Ceramic Composites","authors":"C. Stiewe, Z. He, D. Platzek, E. Muller, S. Li, M. Toprak, M. Muhammed","doi":"10.1109/ICT.2006.331232","DOIUrl":"https://doi.org/10.1109/ICT.2006.331232","url":null,"abstract":"Nanostructuring of unfilled CoSb3 Skutterudites has been successful in reducing the thermal conductivity of these materials [Toprak, et al., 2004]. First measurements on a mixture of the Skutterudite and an inert ceramic with particle sizes in the nanometer range have shown promising results for a further reduced thermal conductivity by decorating the grain boundaries of the thermoelectric material [Stiewe, et al., 2006]. A strong influence of additional phases like CoSb2 and pure Sb in the samples has been encountered, too. Therefore in the present work a more detailed investigation of the effect of phase purity and grain size by an intentional variation of the phase composition is presented. The impact of a variation in the amount of the ceramics addition and of the phase composition on the thermoelectric properties (kappa, sigma, S) of pure and doped CoSb 3, respectively, are studied and the results are discussed with respect to an enhancement of the thermoelectric figure of merit","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131963121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Ziółkowski, G. Karpinski, D. Platzek, C. Stiewe, E. Muller
The scanning Potential Seebeck Microscope (PSM) turned out to be a suitable tool to investigate material properties not only for thermoelectrics. Numerous cooperation and projects which were successfully accomplished by DLR and Panco and their national and international partners have shown the wide spectrum of application for this measurement instrument. The continuing extension of applications and further developments on this instrument were documented within several publications [Platzek, et al., 2005, Platzek, et al., 2005, Chen, et al., 2005, Ziolkowski, et al., 2006, Platzek, et al., 2003] showing the scientific output achieved by applying the PSM. With regard to the further developments which have been made and the results obtained so far, this work will give an overview of the possible applications of the PSM. This multiplexed informations will mark the present status of development and will give an outlook for further goals to reach
{"title":"Application Overview of the Potential Seebeck Microscope","authors":"P. Ziółkowski, G. Karpinski, D. Platzek, C. Stiewe, E. Muller","doi":"10.1109/ICT.2006.331234","DOIUrl":"https://doi.org/10.1109/ICT.2006.331234","url":null,"abstract":"The scanning Potential Seebeck Microscope (PSM) turned out to be a suitable tool to investigate material properties not only for thermoelectrics. Numerous cooperation and projects which were successfully accomplished by DLR and Panco and their national and international partners have shown the wide spectrum of application for this measurement instrument. The continuing extension of applications and further developments on this instrument were documented within several publications [Platzek, et al., 2005, Platzek, et al., 2005, Chen, et al., 2005, Ziolkowski, et al., 2006, Platzek, et al., 2003] showing the scientific output achieved by applying the PSM. With regard to the further developments which have been made and the results obtained so far, this work will give an overview of the possible applications of the PSM. This multiplexed informations will mark the present status of development and will give an outlook for further goals to reach","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131982426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Many silicon compounds which can be used as thermoelectrics have complex structure of conduction or valence band. If it is possible to change energy gaps or effective masses in some energy band it can be either useful or harmful for the increase of thermoelectric figure of merit. In the present work some features of energy spectrum of current carriers of Mg2Si and Mg2Sn compounds and their solid solutions are discussed. Thermoelectric properties of these materials and their relations with the band structure are discussed. The optimization of electron energy spectrum in the solid solutions of Mg 2Si-Mg2Sn system allowed to develop very efficient thermoelectrics with ZTmax > 1.1
{"title":"Some peculiarities of development of efficient thermoelectrics based on silicon compounds","authors":"M. Fedorov, V. Zaitsev, M. Vedernikov","doi":"10.1109/ICT.2006.331293","DOIUrl":"https://doi.org/10.1109/ICT.2006.331293","url":null,"abstract":"Many silicon compounds which can be used as thermoelectrics have complex structure of conduction or valence band. If it is possible to change energy gaps or effective masses in some energy band it can be either useful or harmful for the increase of thermoelectric figure of merit. In the present work some features of energy spectrum of current carriers of Mg2Si and Mg2Sn compounds and their solid solutions are discussed. Thermoelectric properties of these materials and their relations with the band structure are discussed. The optimization of electron energy spectrum in the solid solutions of Mg 2Si-Mg2Sn system allowed to develop very efficient thermoelectrics with ZTmax > 1.1","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126640422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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