T. Kamilov, D.K. Kabilov, R.Kh. Kamilova, M.E. Azimov, V. Klechkovskaya, A. Orekhov, E. Suvorova
The silicides are ecologically friendly materials and they have a mechanical stability to corrosion, oxidation, decay and aggressive environments. It is known that a bulk magnesium silicide - Mg2Si demonstrates semiconductor conductivity n-type character with energy band gap Eg=0.78 eV and solid solution based on the Mg2Si-Mg2Sn have figure of merit of ZT>1 [Samsonov, et. al. 1979]. Only small part of articles has devoted to thin Mg2Si films on silicon. In this work the magnesium silicide films have been grown on silicon substrate by reactive diffusion method and their thermoelectric properties were investigated
{"title":"Investigation of the Magnesium Silicide -- Mg2Si Films","authors":"T. Kamilov, D.K. Kabilov, R.Kh. Kamilova, M.E. Azimov, V. Klechkovskaya, A. Orekhov, E. Suvorova","doi":"10.1109/ICT.2006.331316","DOIUrl":"https://doi.org/10.1109/ICT.2006.331316","url":null,"abstract":"The silicides are ecologically friendly materials and they have a mechanical stability to corrosion, oxidation, decay and aggressive environments. It is known that a bulk magnesium silicide - Mg2Si demonstrates semiconductor conductivity n-type character with energy band gap Eg=0.78 eV and solid solution based on the Mg2Si-Mg2Sn have figure of merit of ZT>1 [Samsonov, et. al. 1979]. Only small part of articles has devoted to thin Mg2Si films on silicon. In this work the magnesium silicide films have been grown on silicon substrate by reactive diffusion method and their thermoelectric properties were investigated","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126513148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ichiro Shiota, H. Kohri, Munehiro Kato, I. J. Ohsugi
Applying a small size cooling system is essential to avoid thermal noise in the field of micro-electronics. Fine thermoelectric materials are required to construct the system. A glass sealed melt spinning process was attempted to fabricate the fine materials. Bi2Te 3 wires of 75 mum in diameter with oval cross section were successfully obtained. The original electrical resistivity and Seebeck coefficient of the wires were maintained after the process
{"title":"Fine Bi2Te3 wires fabricated by glass sealed melt spinning","authors":"Ichiro Shiota, H. Kohri, Munehiro Kato, I. J. Ohsugi","doi":"10.1109/ICT.2006.331361","DOIUrl":"https://doi.org/10.1109/ICT.2006.331361","url":null,"abstract":"Applying a small size cooling system is essential to avoid thermal noise in the field of micro-electronics. Fine thermoelectric materials are required to construct the system. A glass sealed melt spinning process was attempted to fabricate the fine materials. Bi2Te 3 wires of 75 mum in diameter with oval cross section were successfully obtained. The original electrical resistivity and Seebeck coefficient of the wires were maintained after the process","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115922180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We focused on half-Heusler compounds MPtSn, where M is Hf, Zr and Ti, to seek for half-Heusler compounds which intrinsically show excellent p-type thermoelectric properties in a wide temperature range up to around 1000 K. Nearly single-phase MPtSn alloys were fabricated by directional solidification using optical floating zone melting method to evaluate thermoelectric properties as properly as possible. We have found that HfPtSn and ZrPtSn show p-type thermoelectric properties in a measured temperature range from 300 to 1100 K as it is expected from our previous work. It is interesting that HfNiSn and ZrNiSn with the same valence electrons count of 18 are well-known to show n-type thermolectric properties. HfPtSn shows quite high values of p-type thermoelectric power around 250 muV/K in low and intermediate temperature ranges, while ZrPtSn shows much smaller maximum value of about 70 muV/K. On the other hand, TiPtSn exhibits very large n-type thermoelectric power of around 500 muV/K at ambient temperatures though it decreases drastically at elevated temperatures. High electrical resistivity is a major drawback that all three MPtSn compounds have in common. HfPtSn has the lowest thermal conductivity among MPtSn though the values are relatively high. The lattice contribution is supposed to dominates the thermal conduction because of high electrical resistivity and low carrier concentration measured as 2.17 times 1025 m-3
{"title":"Thermoelectric Properties of P-type Half-Heusler Compounds HfPtSn and ZrPtSn","authors":"Y. Kimura, A. Zama, Y. Mishima","doi":"10.1109/ICT.2006.331294","DOIUrl":"https://doi.org/10.1109/ICT.2006.331294","url":null,"abstract":"We focused on half-Heusler compounds MPtSn, where M is Hf, Zr and Ti, to seek for half-Heusler compounds which intrinsically show excellent p-type thermoelectric properties in a wide temperature range up to around 1000 K. Nearly single-phase MPtSn alloys were fabricated by directional solidification using optical floating zone melting method to evaluate thermoelectric properties as properly as possible. We have found that HfPtSn and ZrPtSn show p-type thermoelectric properties in a measured temperature range from 300 to 1100 K as it is expected from our previous work. It is interesting that HfNiSn and ZrNiSn with the same valence electrons count of 18 are well-known to show n-type thermolectric properties. HfPtSn shows quite high values of p-type thermoelectric power around 250 muV/K in low and intermediate temperature ranges, while ZrPtSn shows much smaller maximum value of about 70 muV/K. On the other hand, TiPtSn exhibits very large n-type thermoelectric power of around 500 muV/K at ambient temperatures though it decreases drastically at elevated temperatures. High electrical resistivity is a major drawback that all three MPtSn compounds have in common. HfPtSn has the lowest thermal conductivity among MPtSn though the values are relatively high. The lattice contribution is supposed to dominates the thermal conduction because of high electrical resistivity and low carrier concentration measured as 2.17 times 1025 m-3","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122055339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Experimental data on PbTe2-AgSbTe2-solid solutions near the metal-insulator- transition (MIT) showed controversy resulting in high [Hsu, KF, et al., 2004] or low [Kosuga, A, et al., 2005] values of the Seebeck-coefficient and could partly be explained by specimen inhomogeneties and resulting measurement difficulties [Chen, N, et al., 2005] or different ordering states [Bilc, D, et al., 2004]. The goal of this investigation is to clarify which ordering state is expected to have the higher Seebeck coefficient by estimating the effective mass from ab-initio band structure calculations, as successfully applied for Nb-doped SrTiO3 [Wunderlich, W, et al., 2006] and metallic alloys. While the effective masses for the metallic and the semiconducting compositions were less than 0.5, the effective mass near the MIT was around m*/m0 = 9 for SrNb0.2Ti0.8O2.98 [Wunderlich, W, et al., 2006]. The effective mass depends on ordering, namely on the distance of the foreign atoms. These findings give important guidelines for further improvement of this advanced thermoelectric material
{"title":"Effective Electron Mass of ordered AgPbmSbTe2+m clarified by ab-initio calculations","authors":"W. Wunderlich","doi":"10.1109/ICT.2006.331352","DOIUrl":"https://doi.org/10.1109/ICT.2006.331352","url":null,"abstract":"Experimental data on PbTe2-AgSbTe2-solid solutions near the metal-insulator- transition (MIT) showed controversy resulting in high [Hsu, KF, et al., 2004] or low [Kosuga, A, et al., 2005] values of the Seebeck-coefficient and could partly be explained by specimen inhomogeneties and resulting measurement difficulties [Chen, N, et al., 2005] or different ordering states [Bilc, D, et al., 2004]. The goal of this investigation is to clarify which ordering state is expected to have the higher Seebeck coefficient by estimating the effective mass from ab-initio band structure calculations, as successfully applied for Nb-doped SrTiO3 [Wunderlich, W, et al., 2006] and metallic alloys. While the effective masses for the metallic and the semiconducting compositions were less than 0.5, the effective mass near the MIT was around m*/m0 = 9 for SrNb0.2Ti0.8O2.98 [Wunderlich, W, et al., 2006]. The effective mass depends on ordering, namely on the distance of the foreign atoms. These findings give important guidelines for further improvement of this advanced thermoelectric material","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116841828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Sugihara, K. Morikawa, Y. Igarashi, K. Nishiyama
Thermoelectricity has been hot issue in these days, because of environmental problems and energy sources deficit. Moreover, material development for thermoelectricity is now busy in oxide and metal or alloy, basically. However, conclusive materials with good performance have not yet been found in application basis. We have studied oxide-added beta-FeSi2 for these years. Iron disilicide is well known and utilized in relatively higher temperature. In this report, we indicated our successful improvement of performance of beta-FeSi2 added with Ta2O5 showing the figure of merit almost 0.3 times 10-3/K This was obtained by reducing thermal conductivity and electrical resistivity (a half of standard FeSi2)
{"title":"Effects of oxide additive on thermoelectricity of FeSi2","authors":"S. Sugihara, K. Morikawa, Y. Igarashi, K. Nishiyama","doi":"10.1109/ICT.2006.331240","DOIUrl":"https://doi.org/10.1109/ICT.2006.331240","url":null,"abstract":"Thermoelectricity has been hot issue in these days, because of environmental problems and energy sources deficit. Moreover, material development for thermoelectricity is now busy in oxide and metal or alloy, basically. However, conclusive materials with good performance have not yet been found in application basis. We have studied oxide-added beta-FeSi2 for these years. Iron disilicide is well known and utilized in relatively higher temperature. In this report, we indicated our successful improvement of performance of beta-FeSi2 added with Ta2O5 showing the figure of merit almost 0.3 times 10-3/K This was obtained by reducing thermal conductivity and electrical resistivity (a half of standard FeSi2)","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"198 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129766491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
SixGe1-x is typical thermoelectric materials used for higher temperature as thermoelectric generator. Their property is dependent on their composition. Here different dopants, including P, Ga, B, GaP, In, Sb and InSb, were used to investigate their effect on the thermoelectric properties of n type Si80Ge20 alloys. The results describe that GaP and InSb are good dopant for n type alloys. Especially p type dopants Ga and In are very good multiplex dopant as dopants GaP and InSb for n type Si80Ge20 respectively by Seebeck coefficient of n type Si80Ge20 at same time
{"title":"Thermoelectric properties on n-type Si80Ge20 with different Dopants","authors":"Guiying Xu, Huawei Jiang, Chunyan Zhang, Xiaofeng Wu, Sitong Niu","doi":"10.1109/ICT.2006.331367","DOIUrl":"https://doi.org/10.1109/ICT.2006.331367","url":null,"abstract":"Si<sub>x</sub>Ge<sub>1-x</sub> is typical thermoelectric materials used for higher temperature as thermoelectric generator. Their property is dependent on their composition. Here different dopants, including P, Ga, B, GaP, In, Sb and InSb, were used to investigate their effect on the thermoelectric properties of n type Si<sub>80</sub>Ge<sub>20</sub> alloys. The results describe that GaP and InSb are good dopant for n type alloys. Especially p type dopants Ga and In are very good multiplex dopant as dopants GaP and InSb for n type Si<sub>80</sub>Ge<sub>20</sub> respectively by Seebeck coefficient of n type Si<sub>80</sub>Ge<sub>20 </sub> at same time","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129790999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thermoelectric (TE) device has some problems, such as low mechanical strength, high manufacturing cost, etc. We are developing flexible TE device using thin films and flexible substrates in order to overcome those problems. The purpose of this work is to fabricate and evaluate the flexible TE device. A flexible TE device consists of vapor-deposited thin films of n- and p-type TE materials between two flexible substrates. The flexible substrate is made up of a combination of polyimide and copper. This structure enables the device itself to convert temperature difference of outer surfaces (DeltaTout) into in-plane temperature difference (DeltaT in), and it can generate electricity by the p-n couples. We analyzed temperature distribution of the device by the finite element method (FEM). According to the analysis, a flexible substrate which has thinner polyimide layer (h1) and thicker copper layer (h1) is preferable to obtain larger temperature difference. We fabricated flexible TE devices containing 33 pairs of p-n couple, which is composed of chromel and constantan thin films. The device of h 1/h2 = 12 mum/70 mum generated 3.72 muW at DeltaTout = 22.7 K, while 2.40 muW was generated from the device of h1/h2 = 35 mum/25 mum at DeltaT out = 24.0 K. The performance of the flexible TE device was successfully improved as predicted by the analysis
{"title":"Development of flexible thermoelectric device: Improvement of device performance","authors":"Y. Iwasaki, M. Takeda","doi":"10.1109/ICT.2006.331376","DOIUrl":"https://doi.org/10.1109/ICT.2006.331376","url":null,"abstract":"Thermoelectric (TE) device has some problems, such as low mechanical strength, high manufacturing cost, etc. We are developing flexible TE device using thin films and flexible substrates in order to overcome those problems. The purpose of this work is to fabricate and evaluate the flexible TE device. A flexible TE device consists of vapor-deposited thin films of n- and p-type TE materials between two flexible substrates. The flexible substrate is made up of a combination of polyimide and copper. This structure enables the device itself to convert temperature difference of outer surfaces (DeltaTout) into in-plane temperature difference (DeltaT in), and it can generate electricity by the p-n couples. We analyzed temperature distribution of the device by the finite element method (FEM). According to the analysis, a flexible substrate which has thinner polyimide layer (h1) and thicker copper layer (h1) is preferable to obtain larger temperature difference. We fabricated flexible TE devices containing 33 pairs of p-n couple, which is composed of chromel and constantan thin films. The device of h 1/h2 = 12 mum/70 mum generated 3.72 muW at DeltaTout = 22.7 K, while 2.40 muW was generated from the device of h1/h2 = 35 mum/25 mum at DeltaT out = 24.0 K. The performance of the flexible TE device was successfully improved as predicted by the analysis","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128877219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Binary tellurides such as PbTe or Bi2Te3 represent one of the fundamental classes of thermoelectrics. Thus, the development of new routes for the preparation of these compounds as nanoscale powders is an important challenge. In this context, we investigated the use of activated metals and soluble tellurium sources such as diphenyltelluride or the tellurolates of hard transition metal cations as versatile tool box system for the synthesis of these powders. Using solvochemically activated lead, bismuth or antimony, their respective tellurides PbTe, Bi2Te3 and Sb2 Te3 could be obtained in a reaction with Ph2Te2 following the same experimental protocol in all cases. The preparation of an Ag2Te nanopowder required a different synthetic approach as elemental silver does not react with Ph 2Te2. Following the principle of hard and soft acids and bases, silver acetate and zinc tellurolate Zn(TePh)2middotTMEDA [Jun, Y, 2001] were reacted to form nanoparticles of Ag2Te from intermediately formed silver tellurolate
像PbTe或Bi2Te3这样的二元碲化物代表了热电物质的基本类别之一。因此，开发将这些化合物制备成纳米级粉末的新途径是一个重要的挑战。在这种情况下，我们研究了使用活性金属和可溶性碲源，如二苯基碲化物或硬过渡金属阳离子的碲酸盐作为合成这些粉末的多功能工具箱体系。采用溶剂化学活化的铅、铋或锑，可与Ph2Te2反应得到PbTe、Bi2Te3和sb2te3三种不同的碲化物，实验方法相同。制备Ag2Te纳米粉末需要不同的合成方法，因为元素银不与Ph 2Te2反应。根据软硬酸碱的原理，醋酸银与碲酸锌Zn(TePh)2middotTMEDA [Jun, Y, 2001]反应，中间生成的碲酸银生成Ag2Te纳米颗粒
{"title":"Synthesis and Characterization of nanoscale Bi2Te3, Sb2Te3, PbTe and Ag2Te powders: activated Metals and soluble Tellurium sources as synthetic Tools","authors":"S. Schlecht, M. Yosef, S. Weimer","doi":"10.1109/ICT.2006.331224","DOIUrl":"https://doi.org/10.1109/ICT.2006.331224","url":null,"abstract":"Binary tellurides such as PbTe or Bi<sub>2</sub>Te<sub>3</sub> represent one of the fundamental classes of thermoelectrics. Thus, the development of new routes for the preparation of these compounds as nanoscale powders is an important challenge. In this context, we investigated the use of activated metals and soluble tellurium sources such as diphenyltelluride or the tellurolates of hard transition metal cations as versatile tool box system for the synthesis of these powders. Using solvochemically activated lead, bismuth or antimony, their respective tellurides PbTe, Bi<sub>2</sub>Te<sub>3</sub> and Sb<sub>2 </sub>Te<sub>3</sub> could be obtained in a reaction with Ph<sub>2</sub>Te<sub>2</sub> following the same experimental protocol in all cases. The preparation of an Ag<sub>2</sub>Te nanopowder required a different synthetic approach as elemental silver does not react with Ph <sub>2</sub>Te<sub>2</sub>. Following the principle of hard and soft acids and bases, silver acetate and zinc tellurolate Zn(TePh)<sub>2</sub>middotTMEDA [Jun, Y, 2001] were reacted to form nanoparticles of Ag<sub>2</sub>Te from intermediately formed silver tellurolate","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128944019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Flahaut, R. Funahashi, K. Lee, H. Ohta, K. Koumoto
Ca1-xYbxMnO3 (x = 0-0.5) samples were prepared via solid state reaction in air. Electrical and thermoelectric properties have been investigated up to 1000 K. The measurements reveal that the resistivity values are strongly affected by the charge carrier content and the octahedral distortion. The lowest rho reaches 3 mOmegamiddotcm for x = 0.15. Whereas the Seebeck coefficient depends only on the charge carrier concentration, the thermal conductivity of Ca1-xYbxMnO3 is mainly governed by the mass difference between the Yb and Ca cations. The best ZT value, ZT = 0.2, is obtained for x = 0.05 at 1000 K and demonstrates the good potentialities of these oxides as high temperature thermoelectric material
{"title":"Effect of the Yb substitutions on the thermoelectric properties of CaMnO3","authors":"D. Flahaut, R. Funahashi, K. Lee, H. Ohta, K. Koumoto","doi":"10.1109/ICT.2006.331291","DOIUrl":"https://doi.org/10.1109/ICT.2006.331291","url":null,"abstract":"Ca1-xYbxMnO3 (x = 0-0.5) samples were prepared via solid state reaction in air. Electrical and thermoelectric properties have been investigated up to 1000 K. The measurements reveal that the resistivity values are strongly affected by the charge carrier content and the octahedral distortion. The lowest rho reaches 3 mOmegamiddotcm for x = 0.15. Whereas the Seebeck coefficient depends only on the charge carrier concentration, the thermal conductivity of Ca1-xYbxMnO3 is mainly governed by the mass difference between the Yb and Ca cations. The best ZT value, ZT = 0.2, is obtained for x = 0.05 at 1000 K and demonstrates the good potentialities of these oxides as high temperature thermoelectric material","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"477 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130009824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Wojciechowski, M. Bučko, J. Obła̧kowski, P. Fuć, J. Merkisz
The subject of this work is to present a new concept of reducing NOx emissions in a combustion engine based on full elimination of nitrogen from a supply system. The use of the oxygen separator (oxygen pump), composed of the ceramic ionic conductor, together with an electrical supply system based on thermoelectric materials that utilizes exhaust heat is the main assumption of the proposed solution. The paper focuses on analyzing several possibilities for the practical application of the idea suggested
{"title":"A new concept of reducing nitrogen oxides emissions in a combustion engine -- combination of ceramic oxygen conductors and thermoelectric materials","authors":"K. Wojciechowski, M. Bučko, J. Obła̧kowski, P. Fuć, J. Merkisz","doi":"10.1109/ICT.2006.331239","DOIUrl":"https://doi.org/10.1109/ICT.2006.331239","url":null,"abstract":"The subject of this work is to present a new concept of reducing NOx emissions in a combustion engine based on full elimination of nitrogen from a supply system. The use of the oxygen separator (oxygen pump), composed of the ceramic ionic conductor, together with an electrical supply system based on thermoelectric materials that utilizes exhaust heat is the main assumption of the proposed solution. The paper focuses on analyzing several possibilities for the practical application of the idea suggested","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116778135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：