J. Vián, A. Rodríguez, D. Astrain, L. Aldave, J. Barberena, I.P. Urdiain
A refrigerator that incorporates, in the freezer room, a thermoelectric ice-maker has been developed. A computational model, which solves both thermoelectric and heat conduction equations, as well as phase change, has been implemented. This model provides values of electricity consumption, ice mass per day and refrigerator efficiency. Several experimental prototypes have been constructed in order to validate the computational model and to carry out the experimental optimization of the device. This application has commercial interest, so it has been patented. The patent is property of Bosch-Siemens
{"title":"Development of a thermoelectric icemaker device built in a refrigerator","authors":"J. Vián, A. Rodríguez, D. Astrain, L. Aldave, J. Barberena, I.P. Urdiain","doi":"10.1109/ICT.2006.331219","DOIUrl":"https://doi.org/10.1109/ICT.2006.331219","url":null,"abstract":"A refrigerator that incorporates, in the freezer room, a thermoelectric ice-maker has been developed. A computational model, which solves both thermoelectric and heat conduction equations, as well as phase change, has been implemented. This model provides values of electricity consumption, ice mass per day and refrigerator efficiency. Several experimental prototypes have been constructed in order to validate the computational model and to carry out the experimental optimization of the device. This application has commercial interest, so it has been patented. The patent is property of Bosch-Siemens","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134554287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Self-powered space and water heating systems operate entirely on fuel combustion with no need for externally generated electricity. Excess power can be used to charge batteries or be fed into the household grid to provide electricity for other electrical loads. Self-powered heating systems have the potential for high overall energy efficiency and can be more reliable in providing heat during extreme weather conditions. They are also attractive for remote communities where connection to the grid is not cost effective. To realize this concept, we must develop a reliable, low maintenance and cost-effective means to generate electricity and integrate it into fuel-fired heating units. In the present work, we investigated combustion-heated thermoelectric generation and its application to self-powered heating systems. A thermoelectric module with a power generation capacity of 550 W was integrated into a gas-fired furnace. The tin-telluride-based thermoelectric module has a radial configuration. The effects of heat transfer conditions were studied in order to maximize electric power output. The performance of the thermoelectric device was examined at various operating conditions. We have shown that the technology is attractive and offers the potential for practical applications
{"title":"Integrated Thermoelectric Generator and Application to Self-Powered Heating Systems","authors":"K. Qiu, A. Hayden","doi":"10.1109/ICT.2006.331332","DOIUrl":"https://doi.org/10.1109/ICT.2006.331332","url":null,"abstract":"Self-powered space and water heating systems operate entirely on fuel combustion with no need for externally generated electricity. Excess power can be used to charge batteries or be fed into the household grid to provide electricity for other electrical loads. Self-powered heating systems have the potential for high overall energy efficiency and can be more reliable in providing heat during extreme weather conditions. They are also attractive for remote communities where connection to the grid is not cost effective. To realize this concept, we must develop a reliable, low maintenance and cost-effective means to generate electricity and integrate it into fuel-fired heating units. In the present work, we investigated combustion-heated thermoelectric generation and its application to self-powered heating systems. A thermoelectric module with a power generation capacity of 550 W was integrated into a gas-fired furnace. The tin-telluride-based thermoelectric module has a radial configuration. The effects of heat transfer conditions were studied in order to maximize electric power output. The performance of the thermoelectric device was examined at various operating conditions. We have shown that the technology is attractive and offers the potential for practical applications","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131619634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Analytical expression of electric power is deduced in case of the large-scale thermoelectric device that consists of the cylindrical tubes like roll cake. The mildly curved thermoelectric panels are exposed to the two thermal fluids. These fluids are circulated several times for better utilization of thermal energy. The output powers of 18 model systems are mathematically described by the simultaneous derivative equations based on heat exchange. The temperature profiles in the device depend on the flow directions of hot and cold fluids, but the flow directions do not change the output power. Resultantly 10 sets of solutions for the output power are deduced. The maximum output power is the largest in the VIC system (counter flow using a cylindrical panel). However, that in the two systems (V2CC-I and -II system), where two fluids flow twice in counter directions and one of the fluids goes into the system from the inside of the inner cylinder, can generate the thermoelectric power equivalent with that from the VIC system. V2CC-I and -II systems use only 23.2% volume required for that of VIC system
{"title":"Mathematic Simulation on Power Generation by Roll Cake Type of Thermoelectric Cylinders","authors":"R. Suzuki, D. Tanaka","doi":"10.1109/ICT.2006.331375","DOIUrl":"https://doi.org/10.1109/ICT.2006.331375","url":null,"abstract":"Analytical expression of electric power is deduced in case of the large-scale thermoelectric device that consists of the cylindrical tubes like roll cake. The mildly curved thermoelectric panels are exposed to the two thermal fluids. These fluids are circulated several times for better utilization of thermal energy. The output powers of 18 model systems are mathematically described by the simultaneous derivative equations based on heat exchange. The temperature profiles in the device depend on the flow directions of hot and cold fluids, but the flow directions do not change the output power. Resultantly 10 sets of solutions for the output power are deduced. The maximum output power is the largest in the VIC system (counter flow using a cylindrical panel). However, that in the two systems (V2CC-I and -II system), where two fluids flow twice in counter directions and one of the fluids goes into the system from the inside of the inner cylinder, can generate the thermoelectric power equivalent with that from the VIC system. V2CC-I and -II systems use only 23.2% volume required for that of VIC system","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133150099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The microelectronics industry is reaching the limits of traditional air cooling for many applications, particularly for gaming computers and high-end workstations. The continuing trends toward smaller die and higher heat dissipation lead to higher watt densities and large thermal interface losses. This forces the thermal designer to utilize more and more efficient heat sinks because a significant portion of the die to ambient DeltaT is consumed by interface and spreading losses. The use of thermoelectrics, operating at COPs between 2 and 4, can be an effective means of enhancing or augmenting the thermal performance of air-cooled heat sinks and has been documented at recent thermal management conferences. These publications have focused on the potential improvement in heat sink thermal performance possible from TE enhanced heat sinks for CPU cooling applications. Little work has been published discussing the requirements of the TECs necessary to achieve these performance improvements. This paper will review recent publications detailing the thermal performance improvements possible utilizing thermoelectrically enhanced heat sinks and will address the TEC design and performance criteria. Reliability requirements for CPU applications will also be discussed along a reliability assessment of TECs operating in typical CPU cooling environments
{"title":"Assessment of TEC Thermal and Reliability Requirements for Thermoelectrically Enhanced Heat Sinks for CPU Cooling Applications","authors":"Jim Bierschenk, M. Gilley","doi":"10.1109/ICT.2006.331363","DOIUrl":"https://doi.org/10.1109/ICT.2006.331363","url":null,"abstract":"The microelectronics industry is reaching the limits of traditional air cooling for many applications, particularly for gaming computers and high-end workstations. The continuing trends toward smaller die and higher heat dissipation lead to higher watt densities and large thermal interface losses. This forces the thermal designer to utilize more and more efficient heat sinks because a significant portion of the die to ambient DeltaT is consumed by interface and spreading losses. The use of thermoelectrics, operating at COPs between 2 and 4, can be an effective means of enhancing or augmenting the thermal performance of air-cooled heat sinks and has been documented at recent thermal management conferences. These publications have focused on the potential improvement in heat sink thermal performance possible from TE enhanced heat sinks for CPU cooling applications. Little work has been published discussing the requirements of the TECs necessary to achieve these performance improvements. This paper will review recent publications detailing the thermal performance improvements possible utilizing thermoelectrically enhanced heat sinks and will address the TEC design and performance criteria. Reliability requirements for CPU applications will also be discussed along a reliability assessment of TECs operating in typical CPU cooling environments","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"309 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133258792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Yamamoto, K. Machida, Y. Oikawa, C. Kim, H. Ozaki
P-type thermoelectric materials based on magnetite have been obtained by cobalt substitution (CoxFe3-x-xO4 ). For x ges 1.1, Seebeck coefficient (S) was positive and showed a maximum at a temperature which shifted toward high temperature. For x les 1.0, S was negative, and for x ap 1.0, S changes its sign from positive to negative with increasing temperature. The Co content of Co1.5Fe1.5-xO4 yielded a lowest electrical resistivity of 40 mOmegacm at 973K. Effects of Ni and Co co-doping were also discussed
采用钴取代法制备了基于磁铁矿的p型热电材料(CoxFe3-x-xO4)。对于x ges 1.1，塞贝克系数(S)为正，并在温度向高温方向移动时达到最大值。对于x les 1.0, S为负，对于x ap 1.0, S的符号随着温度的升高从正变为负。Co1.5Fe1.5-xO4的Co含量在973K时电阻率最低，为40 mOmegacm。还讨论了镍和钴共掺杂的影响
{"title":"P-type thermoelectric properties of sintered (NiyCo1-y)xFe3-xO4 with spinel structure","authors":"K. Yamamoto, K. Machida, Y. Oikawa, C. Kim, H. Ozaki","doi":"10.1109/ICT.2006.331228","DOIUrl":"https://doi.org/10.1109/ICT.2006.331228","url":null,"abstract":"P-type thermoelectric materials based on magnetite have been obtained by cobalt substitution (Co<sub>x</sub>Fe<sub>3-x</sub>-xO<sub>4 </sub>). For x ges 1.1, Seebeck coefficient (S) was positive and showed a maximum at a temperature which shifted toward high temperature. For x les 1.0, S was negative, and for x ap 1.0, S changes its sign from positive to negative with increasing temperature. The Co content of Co<sub>1.5</sub>Fe<sub>1.5</sub>-xO<sub>4</sub> yielded a lowest electrical resistivity of 40 mOmegacm at 973K. Effects of Ni and Co co-doping were also discussed","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128857158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Maignan, S. Hébert, D. Pelloquin, C. Martin, V. Pralong, V. Caignaert, Y. Klein
During the search for new thermoelectric materials for high temperature energy conversion, the metal transition oxides have attracted much attention. Their principal advantage lies in the chemical stability under oxidizing atmosphere. Despite that numerous oxide phases exhibit large Seebeck (S) coefficient values (S >100muV.K-1 ), low thermal conductivities (kappa ~ 1W.K-1.m-1), their performances are limited by their resistivity values higher than those of typical thermoelectric materials. Understanding the origin of the large S values of oxides is however a complex challenge. We propose to review the various physical behaviors by comparing several kinds of transition metal oxides for which the structural type governing the cobalt cation crystal field is at the origin of different physics
{"title":"Thermoelectric oxides: important role of the transition metal spin states","authors":"A. Maignan, S. Hébert, D. Pelloquin, C. Martin, V. Pralong, V. Caignaert, Y. Klein","doi":"10.1109/ICT.2006.331260","DOIUrl":"https://doi.org/10.1109/ICT.2006.331260","url":null,"abstract":"During the search for new thermoelectric materials for high temperature energy conversion, the metal transition oxides have attracted much attention. Their principal advantage lies in the chemical stability under oxidizing atmosphere. Despite that numerous oxide phases exhibit large Seebeck (S) coefficient values (S >100muV.K-1 ), low thermal conductivities (kappa ~ 1W.K-1.m-1), their performances are limited by their resistivity values higher than those of typical thermoelectric materials. Understanding the origin of the large S values of oxides is however a complex challenge. We propose to review the various physical behaviors by comparing several kinds of transition metal oxides for which the structural type governing the cobalt cation crystal field is at the origin of different physics","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131275336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thermoelectric generation technology that can convert thermal energy directly into electrical power has attracted a great deal of public attention as a system of waste heat recovery. To utilize waste heat in the 500-600 degC range effectively, it is necessary to develop a thermoelectric generation module which offers high performance, has a simple structure and can be used in air, etc. This paper describes the fabrication of a 500 degC class thermoelectric generation module, a stacked Bi-Te module and Pb-Te module; the properties of the Bi-Te and Pb-Te thermoelectric elements used, module efficiency and electrical power density for the module. Also the high temperature stability for a high temperature stage module with Pb-Te thermoelectric elements is presented
{"title":"Fabrication of 500°C Class Thermoelectric Module and Evaluation of its High Temperature Stability","authors":"Y. Hori, T. Ito","doi":"10.1109/ICT.2006.331223","DOIUrl":"https://doi.org/10.1109/ICT.2006.331223","url":null,"abstract":"Thermoelectric generation technology that can convert thermal energy directly into electrical power has attracted a great deal of public attention as a system of waste heat recovery. To utilize waste heat in the 500-600 degC range effectively, it is necessary to develop a thermoelectric generation module which offers high performance, has a simple structure and can be used in air, etc. This paper describes the fabrication of a 500 degC class thermoelectric generation module, a stacked Bi-Te module and Pb-Te module; the properties of the Bi-Te and Pb-Te thermoelectric elements used, module efficiency and electrical power density for the module. Also the high temperature stability for a high temperature stage module with Pb-Te thermoelectric elements is presented","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115204988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thermal conductivity of doped MNiSn (M = Ti, Zr) half-Heusler alloys has been investigated from room temperature to 1000 K. Nonnegligible increase of thermal conductivity was observed for all the samples at high temperature. The temperature dependence appeared to the corresponding to the change of electrical properties and carrier concentration, indicating that the electron-hole pair generation caused the increase of thermal conductivity. The effect, called ambipolar diffusion effect, depends on a bandgap and a ratio of electron and hole conduction. In this study the bandgap was determined from electrical conductivity of yttrium doped of ZrNiSn and the temperature dependence of the ambipolar diffusion effect was quantitatively investigated
{"title":"Effect of carrier doping on the thermal conductivity of MNiSn based half-Heusler alloy","authors":"H. Muta, T. Kanemitsu, K. Kurosaki, S. Yamanaka","doi":"10.1109/ICT.2006.331295","DOIUrl":"https://doi.org/10.1109/ICT.2006.331295","url":null,"abstract":"Thermal conductivity of doped MNiSn (M = Ti, Zr) half-Heusler alloys has been investigated from room temperature to 1000 K. Nonnegligible increase of thermal conductivity was observed for all the samples at high temperature. The temperature dependence appeared to the corresponding to the change of electrical properties and carrier concentration, indicating that the electron-hole pair generation caused the increase of thermal conductivity. The effect, called ambipolar diffusion effect, depends on a bandgap and a ratio of electron and hole conduction. In this study the bandgap was determined from electrical conductivity of yttrium doped of ZrNiSn and the temperature dependence of the ambipolar diffusion effect was quantitatively investigated","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115724507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Isoda, T. Nagai, H. Fujiu, Y. Imai, Y. Shinohara
Mg2Si1-xSnx systems, an ecologically friendly semiconductor, are the perspective material for thermoelectric generators at temperatures range from 500 to 800K. The single phase of this system at the compositions range of 0.4 < x < 0.6 has not been reported until now. The single phase of Mg2Si0.5Sn0.5 has been successfully obtained by a Liquid-Solid reaction method and Hot-pressing method. The minimum value of thermal conductivity was identified at around x=0.5. The high thermoelectric performance can be attained by the controlling of carrier concentration for Mg2Si0.5Sn0.5 . In this present work, the thermoelectric properties for the single-phase of Sb-doped Mg2Si0.5Sn0.5 were investigated. Seebeck coefficient alpha, electrical resistivity p and thermal conductivity k were measured from room temperature to 850K. The sign of alpha showed negative for all samples and has been n-type conduction. The temperature dependency of alpha for non-and 5000ppmSb-doped samples increased up to the maximum value of -440muVK -1 at 440K and -328muVK-1 at 578K, respectively. The alpha of 7500ppmSb sample were increased linearly with temperature. For non- and 5000ppmSb-sample, the temperature dependency of the p showed semiconducting properties. On the other hand, the sample of 7500ppmSb or more showed metallic behavior. The difference of this behavior is result of the conduction mechanism changed by the increase of carrier concentration. The carrier component of thermal conductivity was increased, while the phonon component of thermal conductivity was decreased slightly with carrier concentration. The dimensionless figure of merit was showed markedly enhanced the maximum value of ZT=1.2 for Sb doped 7500ppm at 620K
Mg2Si1-xSnx系统是一种生态友好型半导体，是温度范围为500至800K的热电发电机的理想材料。该体系在组分0.4 < x < 0.6范围内的单相，目前尚未见报道。采用液固反应法和热压法制备了Mg2Si0.5Sn0.5单相合金。热导率的最小值在x=0.5左右。通过控制Mg2Si0.5Sn0.5的载流子浓度，可以获得较高的热电性能。本文研究了sb掺杂Mg2Si0.5Sn0.5的单相热电性能。在室温至850K范围内测量塞贝克系数α、电阻率p和导热系数k。所有样品的α符号均为负，为n型导电。未掺杂和5000ppmsb的样品α的温度依赖性增加，分别在440K和578K时达到最大值-440muVK -1和-328muVK-1。7500ppmSb样品的α随温度线性升高。对于非和5000ppmsb样品，p的温度依赖性表现为半导体性质。另一方面，7500ppmSb或更高的样品表现出金属行为。这种行为的差异是载流子浓度增加改变了传导机制的结果。随着载流子浓度的增加，热导率的载流子分量增加，而热导率的声子分量略有下降。在620K下，当Sb掺杂7500ppm时，无量纲品质图显著提高ZT=1.2的最大值
{"title":"Thermoelectric Properties of Sb-doped Mg2Si0.5Sn0.5","authors":"Y. Isoda, T. Nagai, H. Fujiu, Y. Imai, Y. Shinohara","doi":"10.1109/ICT.2006.331283","DOIUrl":"https://doi.org/10.1109/ICT.2006.331283","url":null,"abstract":"Mg2Si1-xSnx systems, an ecologically friendly semiconductor, are the perspective material for thermoelectric generators at temperatures range from 500 to 800K. The single phase of this system at the compositions range of 0.4 < x < 0.6 has not been reported until now. The single phase of Mg2Si0.5Sn0.5 has been successfully obtained by a Liquid-Solid reaction method and Hot-pressing method. The minimum value of thermal conductivity was identified at around x=0.5. The high thermoelectric performance can be attained by the controlling of carrier concentration for Mg2Si0.5Sn0.5 . In this present work, the thermoelectric properties for the single-phase of Sb-doped Mg2Si0.5Sn0.5 were investigated. Seebeck coefficient alpha, electrical resistivity p and thermal conductivity k were measured from room temperature to 850K. The sign of alpha showed negative for all samples and has been n-type conduction. The temperature dependency of alpha for non-and 5000ppmSb-doped samples increased up to the maximum value of -440muVK -1 at 440K and -328muVK-1 at 578K, respectively. The alpha of 7500ppmSb sample were increased linearly with temperature. For non- and 5000ppmSb-sample, the temperature dependency of the p showed semiconducting properties. On the other hand, the sample of 7500ppmSb or more showed metallic behavior. The difference of this behavior is result of the conduction mechanism changed by the increase of carrier concentration. The carrier component of thermal conductivity was increased, while the phonon component of thermal conductivity was decreased slightly with carrier concentration. The dimensionless figure of merit was showed markedly enhanced the maximum value of ZT=1.2 for Sb doped 7500ppm at 620K","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124100412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Uchiyama, Y. Hasegawa, H. Morita, A. Kurokouchi, K. Wada, T. Komine
Cuprous oxide Cu-O thin film was deposited by Reactive Ion Plating (RIP) method, and the thermoelectric properties of Cu-O thin films were studied with varying oxygen content. Copper was evaporated by electron gun, and thin film of Cu-O was deposited with reaction in oxygen plasma. Adjusting of oxygen gas flow rate could control oxygen content of the deposited thin film. Seebeck coefficient and resistivity of the Cu2 O were 0.7 mV/K and 83.5 Omegacm at room temperature, respectively. Since the resistivity was still high for the thermoelectric material, we attempted to fabricate the Cu2O thin film using copper, oxygen gas and nitrogen gas as a dopant. As a result, the Seebeck and resistivity could achieve 0.3mV/K and 2 Omegacm, which is the lowest resistivity reported without hydrogen treatment
{"title":"Thermoelectric property of Cu2O thin film deposited by Reactive Ion Plating method","authors":"H. Uchiyama, Y. Hasegawa, H. Morita, A. Kurokouchi, K. Wada, T. Komine","doi":"10.1109/ICT.2006.331276","DOIUrl":"https://doi.org/10.1109/ICT.2006.331276","url":null,"abstract":"Cuprous oxide Cu-O thin film was deposited by Reactive Ion Plating (RIP) method, and the thermoelectric properties of Cu-O thin films were studied with varying oxygen content. Copper was evaporated by electron gun, and thin film of Cu-O was deposited with reaction in oxygen plasma. Adjusting of oxygen gas flow rate could control oxygen content of the deposited thin film. Seebeck coefficient and resistivity of the Cu2 O were 0.7 mV/K and 83.5 Omegacm at room temperature, respectively. Since the resistivity was still high for the thermoelectric material, we attempted to fabricate the Cu2O thin film using copper, oxygen gas and nitrogen gas as a dopant. As a result, the Seebeck and resistivity could achieve 0.3mV/K and 2 Omegacm, which is the lowest resistivity reported without hydrogen treatment","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117193890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：