Pub Date : 1958-12-31DOI: 10.1007/978-3-663-02557-3_2
F. A. Kröger, H. Vink
{"title":"The Incorporation of Foreign Atoms in Crystalline solids","authors":"F. A. Kröger, H. Vink","doi":"10.1007/978-3-663-02557-3_2","DOIUrl":"https://doi.org/10.1007/978-3-663-02557-3_2","url":null,"abstract":"","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1958-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126302235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1958-12-31DOI: 10.1007/978-3-663-02557-3_97
G. I. Skanawi
{"title":"Die relaxationsmäßige Dielektrikapolarisation und das innere Feld in Kristallen und Polykristallen","authors":"G. I. Skanawi","doi":"10.1007/978-3-663-02557-3_97","DOIUrl":"https://doi.org/10.1007/978-3-663-02557-3_97","url":null,"abstract":"","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1958-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125256224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1958-12-31DOI: 10.1007/978-3-663-02557-3_7
T. Moss
{"title":"Photo-Electro-Magnetic and Magnetic Barrier Layer Effects","authors":"T. Moss","doi":"10.1007/978-3-663-02557-3_7","DOIUrl":"https://doi.org/10.1007/978-3-663-02557-3_7","url":null,"abstract":"","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1958-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122236595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1957-06-01DOI: 10.1007/978-3-663-02557-3_37
H. Jacobs, I. N. Greenberg, L. Goble, A. Ramsa
{"title":"Resonance Potentials in Thin Films of Potassium Chloride","authors":"H. Jacobs, I. N. Greenberg, L. Goble, A. Ramsa","doi":"10.1007/978-3-663-02557-3_37","DOIUrl":"https://doi.org/10.1007/978-3-663-02557-3_37","url":null,"abstract":"","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1957-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122205121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1957-05-01DOI: 10.1088/0370-1301/70/5/304
J. Nixon, P. Banbury
The surface conductance of germanium may be modulated by an external electric field. If the electrode used for applying the field does not cover the full extension of the specimen a boundary effect appears. In the presence of longitudinal currents the transition regions between the field-free and field-applied surfaces behave as junctions, giving rise to carrier concentration disturbances and also to rectification. The properties of a single field-induced junction have been investigated experimentally.
{"title":"Junctions Induced in Germanium Surfaces by Transverse Electric Fields","authors":"J. Nixon, P. Banbury","doi":"10.1088/0370-1301/70/5/304","DOIUrl":"https://doi.org/10.1088/0370-1301/70/5/304","url":null,"abstract":"The surface conductance of germanium may be modulated by an external electric field. If the electrode used for applying the field does not cover the full extension of the specimen a boundary effect appears. In the presence of longitudinal currents the transition regions between the field-free and field-applied surfaces behave as junctions, giving rise to carrier concentration disturbances and also to rectification. The properties of a single field-induced junction have been investigated experimentally.","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"167 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1957-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121803614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1957-05-01DOI: 10.1007/978-3-663-02557-3_22
M. Bernard
{"title":"Mesures en Fonction de la Température du Courant dans les Jonctions de Germanium n-p","authors":"M. Bernard","doi":"10.1007/978-3-663-02557-3_22","DOIUrl":"https://doi.org/10.1007/978-3-663-02557-3_22","url":null,"abstract":"","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1957-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126689049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1957-02-01DOI: 10.1088/0370-1301/70/2/309
A. Jonscher
It is known that in most semiconductors and photoconductors excitation of excess free carrier densities Δn and Δp is accompanied by some “trapping” of either or both carriers in localised levels in the forbidden band. The population of these levels changes by Δn t and we have the general relation: (1)
{"title":"Drift of Minority Carriers in the Presence of Trapping","authors":"A. Jonscher","doi":"10.1088/0370-1301/70/2/309","DOIUrl":"https://doi.org/10.1088/0370-1301/70/2/309","url":null,"abstract":"It is known that in most semiconductors and photoconductors excitation of excess free carrier densities Δn and Δp is accompanied by some “trapping” of either or both carriers in localised levels in the forbidden band. The population of these levels changes by Δn t and we have the general relation: \u0000 \u0000 \u0000 \u0000(1)","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1957-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121144703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The modification of photoconductivity or luminescence in CdS and ZnS semiconductors by infrared radiation or by electric fields has recently been investigated in some detail [1, 2, 3, 4, 5, 6,] The aspect of this phenomenon with which this paper is concerned is the “dynamic quenching” [3], that is the change of photoconductivity or luminescence with time while the quenching agent (infrared radiation or electric field) is applied or after its removal. Usually, the “quenching” is a superposition of stimulation effects and quenching proper.
{"title":"Theory of Dynamic Quenching of Photoconductivity and Luminescence","authors":"F. Matossi","doi":"10.1149/1.2430187","DOIUrl":"https://doi.org/10.1149/1.2430187","url":null,"abstract":"The modification of photoconductivity or luminescence in CdS and ZnS semiconductors by infrared radiation or by electric fields has recently been investigated in some detail [1, 2, 3, 4, 5, 6,] The aspect of this phenomenon with which this paper is concerned is the “dynamic quenching” [3], that is the change of photoconductivity or luminescence with time while the quenching agent (infrared radiation or electric field) is applied or after its removal. Usually, the “quenching” is a superposition of stimulation effects and quenching proper.","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1956-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133280729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hydrogen is found to diffuse into and increase the conductivity of single ZnO crystals. The diffusion rates have been obtained, as well as the temperature and pressure dependencies of the quantity of hydrogen in the crystal. This quantity is found to be influenced by the electrons already in the crystal. It is thought likely that hydroxyl groups are formed from the hydrogen and oxide ions. The donor center has an ionization energy of 0.04 ev.
{"title":"Hydrogen as a Donor in Zinc Oxide","authors":"D. G. Thomas, J. J. Lander","doi":"10.1063/1.1743165","DOIUrl":"https://doi.org/10.1063/1.1743165","url":null,"abstract":"Hydrogen is found to diffuse into and increase the conductivity of single ZnO crystals. The diffusion rates have been obtained, as well as the temperature and pressure dependencies of the quantity of hydrogen in the crystal. This quantity is found to be influenced by the electrons already in the crystal. It is thought likely that hydroxyl groups are formed from the hydrogen and oxide ions. The donor center has an ionization energy of 0.04 ev.","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"141 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1956-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128995447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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