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Recent Advances in PMOS Negative Bias Temperature Instability最新文献

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BAT Framework Modeling of RMG HKMG GAA-SNS FETs
Pub Date : 2021-11-26 DOI: 10.1007/978-981-16-6120-4_12
N. Choudhury, Tarun Samadder, R. Southwick, Huimei Zhou, Miaomiao Wang, Souvik Mahapatra
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引用次数: 1
BAT Framework Modeling of AC NBTI: Stress Mode, Duty Cycle and Frequency 交流NBTI的BAT框架建模:应力模态、占空比和频率
Pub Date : 2021-11-26 DOI: 10.1007/978-981-16-6120-4_14
S. Mahapatra, N. Parihar, N. Goel, N. Choudhury, Tarun Samadder, Uma Sharma
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引用次数: 0
BAT Framework Modeling of Gate First HKMG Si Channel MOSFETs 栅极优先HKMG硅沟道mosfet的BAT框架建模
Pub Date : 2021-11-26 DOI: 10.1007/978-981-16-6120-4_7
S. Mahapatra, N. Parihar, N. Goel, N. Choudhury, Tarun Samadder
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引用次数: 0
BTI Analysis Tool (BAT) Model Framework—Interface Trap Occupancy and Hole Trapping BTI分析工具(BAT)模型框架-接口陷阱占用和漏洞陷阱
Pub Date : 2021-11-26 DOI: 10.1007/978-981-16-6120-4_5
S. Mahapatra, N. Parihar, N. Choudhury, N. Goel
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引用次数: 0
BAT Framework Modeling of Dimension Scaling in FinFETs and GAA-SNS FETs finfet和GAA-SNS fet尺寸缩放的BAT框架建模
Pub Date : 2021-11-26 DOI: 10.1007/978-981-16-6120-4_13
Souvik Mahapatra, N. Parihar, N. Choudhury, R. Tiwari, Tarun Samadder
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引用次数: 0
BTI Analysis Tool (BAT) Model Framework—Generation of Bulk Traps BTI分析工具(BAT)模型框架-批量陷阱生成
Pub Date : 2021-11-26 DOI: 10.1007/978-981-16-6120-4_6
S. Mahapatra, N. Parihar, Tarun Samadder, N. Choudhury, Akshay Raj
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引用次数: 0
BAT Framework Modeling of Gate First HKMG Si-Capped SiGe Channel MOSFETs 栅极第一HKMG硅帽SiGe沟道mosfet的BAT框架建模
Pub Date : 2021-11-26 DOI: 10.1007/978-981-16-6120-4_8
N. Parihar, Tarun Samadder, S. Mahapatra
{"title":"BAT Framework Modeling of Gate First HKMG Si-Capped SiGe Channel MOSFETs","authors":"N. Parihar, Tarun Samadder, S. Mahapatra","doi":"10.1007/978-981-16-6120-4_8","DOIUrl":"https://doi.org/10.1007/978-981-16-6120-4_8","url":null,"abstract":"","PeriodicalId":356407,"journal":{"name":"Recent Advances in PMOS Negative Bias Temperature Instability","volume":"90 8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128310256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
BTI Analysis Tool (BAT) Model Framework—Generation of Interface Traps BTI分析工具(BAT)模型框架-生成接口陷阱
Pub Date : 2021-11-26 DOI: 10.1007/978-981-16-6120-4_4
S. Mahapatra, N. Parihar, S. Mukhopadhyay, N. Goel
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引用次数: 0
BAT Framework Modeling of RMG HKMG SOI FinFETs RMG HKMG SOI FinFETs的BAT框架建模
Pub Date : 2021-11-26 DOI: 10.1007/978-981-16-6120-4_10
N. Parihar, N. Choudhury, Tarun Samadder, Uma Sharma, R. Southwick, Miaomiao Wang, J. Stathis, Souvik Mahapatra
{"title":"BAT Framework Modeling of RMG HKMG SOI FinFETs","authors":"N. Parihar, N. Choudhury, Tarun Samadder, Uma Sharma, R. Southwick, Miaomiao Wang, J. Stathis, Souvik Mahapatra","doi":"10.1007/978-981-16-6120-4_10","DOIUrl":"https://doi.org/10.1007/978-981-16-6120-4_10","url":null,"abstract":"","PeriodicalId":356407,"journal":{"name":"Recent Advances in PMOS Negative Bias Temperature Instability","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115010004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
BAT Framework Modeling of RMG HKMG Si and SiGe Channel FinFETs RMG HKMG Si和SiGe通道finfet的BAT框架建模
Pub Date : 2021-11-26 DOI: 10.1007/978-981-16-6120-4_11
N. Parihar, N. Choudhury, Tarun Samadder, R. Southwick, Miaomiao Wang, J. Stathis, Souvik Mahapatra
{"title":"BAT Framework Modeling of RMG HKMG Si and SiGe Channel FinFETs","authors":"N. Parihar, N. Choudhury, Tarun Samadder, R. Southwick, Miaomiao Wang, J. Stathis, Souvik Mahapatra","doi":"10.1007/978-981-16-6120-4_11","DOIUrl":"https://doi.org/10.1007/978-981-16-6120-4_11","url":null,"abstract":"","PeriodicalId":356407,"journal":{"name":"Recent Advances in PMOS Negative Bias Temperature Instability","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121177278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
Recent Advances in PMOS Negative Bias Temperature Instability
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