Due to its extreme hardness and chemical stability, diamond poses significant challenges for traditional machining processes. Plasma-assisted polishing (PAP) is a recently developed technique that integrates chemically active species from plasma with mechanical polishing, offering great potential for highly efficient and precise surface finishing of diamond materials. In this study, the polishing characteristics of silicon and silica plates were comprehensively investigated. The results confirmed the superiority of the silicon plate, which produced a smoother diamond surface and achieved a higher material removal rate (MRR) during PAP. To clarify the origin of this difference, the synergistic role of plasma irradiation was examined, as plasma is known to significantly enhance both the MRR and surface quality of diamond. Accordingly, X-ray photoelectron spectroscopy (XPS) measurements combined with density functional theory (DFT) calculations were conducted to gain deeper insights into the underlying mechanisms. The analyses revealed that both the polishing plate material and plasma irradiation play crucial roles in the PAP process. The higher chemical reactivity of silicon promotes bond formation at the tribological interface, thereby facilitating carbon removal. Meanwhile, oxygen radicals generated by plasma participate in interfacial reactions by oxidizing both the diamond and the polishing plate surface, as well as promoting the formation of oxygen-bridge bonds. This process enhances the diamond removal rate but simultaneously accelerates wear of the polishing plate surface. To further evaluate this effect, a long-duration polishing experiment was performed to investigate plate wear. The results showed that as wear progresses, the plate surface becomes smoother, leading to a decline in both polishing accuracy and the MRR of the diamond substrate. To counteract this effect, laser dressing was introduced to restore and sustain surface roughness, and its effectiveness was experimentally confirmed. Finally, PAP was applied to a 2-inch polycrystalline diamond substrate, achieving a grain-boundary step-free surface with a surface roughness (Sa) of approximately 0.3 nm. These findings provide practical guidance for the ultra-precision machining of diamond, deepen the understanding of coupled chemical–mechanical interactions at the tribological interface, and support the advancement of diamond-based components in semiconductor applications.
扫码关注我们
求助内容:
应助结果提醒方式:
