CoSi2 gate MOS structures were formed by 20, 30, and 40 keV Si2+ Focused Ion Beam (FIB) irradiation to the 14/50 and 21 /75 nm Co/Si layers on 20 mii SiO2 films, and electrical properties of the structures were investigated. The results of the C-V measurement show that the flat-band shift increases with increasing the irradiation damage in SiO2 films. The leak current was also investigated by the I-V measurement, and it is concluded that the leak current was caused by the irradiation damage in SiO2 films and the Si-rich layers near the silicide/SiO2 interface formed by insufficient mixing of Co and Si atoms. In order to optimize the fabrication process of the CoSi2 gate MOS structures by the irradiation, the irradiation damage induced in SiO2 films should be minimized, and the sufficient energy should be deposited in Co/Si layers to induce the mixing of Co and Si atoms. For the 21/75 inn Co/Si sample irradiated with 40 keV Si2+ to 5x 1015 cm-2, the Fowler-Nordheirn tunneling current was observed, and flat-band shift was 1.6 V.
采用20、30和40 keV Si2+聚焦离子束(FIB)辐照20 mii SiO2薄膜上的14/50和21 /75 nm Co/Si层，形成CoSi2栅极MOS结构，并对结构的电学性能进行了研究。C-V测量结果表明，SiO2薄膜的平带位移随辐照损伤的增加而增加。通过对泄漏电流的I-V测量，得出泄漏电流是由于辐照损伤SiO2薄膜和Co和Si原子混合不足而形成的硅化物/SiO2界面附近的富Si层造成的。为了优化辐照制备CoSi2栅极MOS结构的工艺，应尽量减少在SiO2薄膜中引起的辐照损伤，并在Co/Si层中沉积足够的能量以诱导Co和Si原子的混合。以40 keV Si2+辐照至5 × 1015 cm-2，观察到21/75 inn Co/Si样品的Fowler-Nordheirn隧穿电流，平带位移为1.6 V。
{"title":"Characterization of CoSi_2 Gate MOS Structure Formed by Ion Irradiation","authors":"A. Matsushita, Yiqun Zhang, T. Sadoh","doi":"10.15017/1498421","DOIUrl":"https://doi.org/10.15017/1498421","url":null,"abstract":"CoSi2 gate MOS structures were formed by 20, 30, and 40 keV Si2+ Focused Ion Beam (FIB) irradiation to the 14/50 and 21 /75 nm Co/Si layers on 20 mii SiO2 films, and electrical properties of the structures were investigated. The results of the C-V measurement show that the flat-band shift increases with increasing the irradiation damage in SiO2 films. The leak current was also investigated by the I-V measurement, and it is concluded that the leak current was caused by the irradiation damage in SiO2 films and the Si-rich layers near the silicide/SiO2 interface formed by insufficient mixing of Co and Si atoms. In order to optimize the fabrication process of the CoSi2 gate MOS structures by the irradiation, the irradiation damage induced in SiO2 films should be minimized, and the sufficient energy should be deposited in Co/Si layers to induce the mixing of Co and Si atoms. For the 21/75 inn Co/Si sample irradiated with 40 keV Si2+ to 5x 1015 cm-2, the Fowler-Nordheirn tunneling current was observed, and flat-band shift was 1.6 V.","PeriodicalId":39314,"journal":{"name":"Research Reports on Information Science and Electrical Engineering of Kyushu University","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1999-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"66745294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Tateiba, 光生 立居場, Z. Meng, 孟 志奇, ミツオ タテイバ, モウ シキ
In order to analyze wave scattering from a conducting body surrounded by random media, we defined current generators as an operator that transforms incident waves into surface currents on the body. Current generators are usually expressed in terms of the inverse matrix of which each element is the inner product of basis functions called sometimes modal functions. If the body is a cylinder with circular or elliptic cross-section, the basis functions can be chosen to be orthogonal ones and the inverse matrix becomes diagonal one; consequently, current generators are expressed in infinite series. This paper deals with the infinite-series expressions of current generators for circular and elliptic cylinders by using cylindrical or Mathieu functions according as the circular or elliptic cross-section of cylinders. These explicit expressions are useful for the analysis of scattering problems.
{"title":"Infinite-Series Expressions of Current Generators in Wave Scattering from a Conducting Body","authors":"M. Tateiba, 光生 立居場, Z. Meng, 孟 志奇, ミツオ タテイバ, モウ シキ","doi":"10.15017/1498406","DOIUrl":"https://doi.org/10.15017/1498406","url":null,"abstract":"In order to analyze wave scattering from a conducting body surrounded by random media, we defined current generators as an operator that transforms incident waves into surface currents on the body. Current generators are usually expressed in terms of the inverse matrix of which each element is the inner product of basis functions called sometimes modal functions. If the body is a cylinder with circular or elliptic cross-section, the basis functions can be chosen to be orthogonal ones and the inverse matrix becomes diagonal one; consequently, current generators are expressed in infinite series. This paper deals with the infinite-series expressions of current generators for circular and elliptic cylinders by using cylindrical or Mathieu functions according as the circular or elliptic cross-section of cylinders. These explicit expressions are useful for the analysis of scattering problems.","PeriodicalId":39314,"journal":{"name":"Research Reports on Information Science and Electrical Engineering of Kyushu University","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1999-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"66745236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Fabrication and Characteristics Evaluation of CoSi2-Gate MOS Electron Tunneling Emission Cathode","authors":"Yiqun Zhang, A. Kenjo, T. Sadoh","doi":"10.15017/1498420","DOIUrl":"https://doi.org/10.15017/1498420","url":null,"abstract":"","PeriodicalId":39314,"journal":{"name":"Research Reports on Information Science and Electrical Engineering of Kyushu University","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1999-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"66745248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Damage induced by ion irradiation in CoSi2 layers on Si02 films has been investigated. CoSi2 layers with 25 nm thickness were irradiation with 25 keV Ar+ ions to a dose of 2 x 1014 cm-2 with various dose rate. Pulsed irradiation with various duty ratios was also eniployed. After the irradiation, the change in sheet resistance of the layers was evaluated. The increase in the resistance increased with increasing the dose rate for samples irradiated with dose rates above the critical value of 7.5 x 1011 cm-2 s-1 at room temperature. The increase has been discussed on the basis of our proposed model and attributed to the overlapping of cascade zones induced by irradiation with dose rates above the critical value. The result of the pulsed irradiation showed that the incremental sheet resistance decreases with increasing the irradiation temperature, and the relaxation time was estimated at shorter than 200 is at room temperature. Higher irradiation temperature and lower dose rate than the critical value result in the lower resistivity CoSi2 layers.
{"title":"Resistance Increase in CoSi_2 Layer by Irradiation Induced Damage","authors":"A. Matsushita, T. Sadoh, T. Tsurushima","doi":"10.15017/1500393","DOIUrl":"https://doi.org/10.15017/1500393","url":null,"abstract":"Damage induced by ion irradiation in CoSi2 layers on Si02 films has been investigated. CoSi2 layers with 25 nm thickness were irradiation with 25 keV Ar+ ions to a dose of 2 x 1014 cm-2 with various dose rate. Pulsed irradiation with various duty ratios was also eniployed. After the irradiation, the change in sheet resistance of the layers was evaluated. The increase in the resistance increased with increasing the dose rate for samples irradiated with dose rates above the critical value of 7.5 x 1011 cm-2 s-1 at room temperature. The increase has been discussed on the basis of our proposed model and attributed to the overlapping of cascade zones induced by irradiation with dose rates above the critical value. The result of the pulsed irradiation showed that the incremental sheet resistance decreases with increasing the irradiation temperature, and the relaxation time was estimated at shorter than 200 is at room temperature. Higher irradiation temperature and lower dose rate than the critical value result in the lower resistivity CoSi2 layers.","PeriodicalId":39314,"journal":{"name":"Research Reports on Information Science and Electrical Engineering of Kyushu University","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1999-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"66745306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Dong-Ju Bai, A. Baba, 馬場 昭好, A. Kenjo, 権丈 淳, T. Sadoh, 佐道 泰造, T. Sado, H. Nakashima, 中島 寛, H. Mori, T. Tsurushima, 鶴島 稔夫, ババ アキヨシ, アツシ ケンジョウ, タイゾウ サドウ, ヒロシ ナカシマ, モリ ヒロシ, トシオ ツルシマ
Contribution of recoil atoms to the spatial distribution of total energy deposited by ions impinging in silicon is evaluated for 10-250 keV B and Ar ions. The calculated results are compared with the damaged layer thickness obtained by the ion-bombardment-enhanced selective etching, and the effect of energy transport with recoil atoms (recoil atom effect) on deposited energy distributions is discussed.
{"title":"Effect of Energy Transport with Recoil Atoms on Deposited Energy Distribution in Silicon Irradiated with Energetic Ions","authors":"Dong-Ju Bai, A. Baba, 馬場 昭好, A. Kenjo, 権丈 淳, T. Sadoh, 佐道 泰造, T. Sado, H. Nakashima, 中島 寛, H. Mori, T. Tsurushima, 鶴島 稔夫, ババ アキヨシ, アツシ ケンジョウ, タイゾウ サドウ, ヒロシ ナカシマ, モリ ヒロシ, トシオ ツルシマ","doi":"10.15017/1523855","DOIUrl":"https://doi.org/10.15017/1523855","url":null,"abstract":"Contribution of recoil atoms to the spatial distribution of total energy deposited by ions impinging in silicon is evaluated for 10-250 keV B and Ar ions. The calculated results are compared with the damaged layer thickness obtained by the ion-bombardment-enhanced selective etching, and the effect of energy transport with recoil atoms (recoil atom effect) on deposited energy distributions is discussed.","PeriodicalId":39314,"journal":{"name":"Research Reports on Information Science and Electrical Engineering of Kyushu University","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1997-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"66745344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The Evaluation of Temporary Degradation in Quarter Micron MOSFET by Hydrogen Passivation of Boron","authors":"K. Tsukamoto, T. Sadoh, A. Ikeda","doi":"10.15017/1474936","DOIUrl":"https://doi.org/10.15017/1474936","url":null,"abstract":"","PeriodicalId":39314,"journal":{"name":"Research Reports on Information Science and Electrical Engineering of Kyushu University","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"66745230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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