Progress in Surface Science最新文献

The fascinating electronic and optoelectronic properties of freestanding graphene and the possible inclusion of novel two-dimensional (2D) systems in silicon-based electronics have driven the search for atomic layers consisting of other group-IV elements Si, Ge, Sn, and Pb, which form similar hexagonal lattices and are isoelectronic to graphene. The resulting 2D crystals silicene, germanene, stanene and plumbene, referred as Xenes, but also their functionalized counterparts, e.g. the hydrogenated sheet crystals, named as Xanes, silicane, germanane, and stanane, are in the focus of this review article. In addition, halogenated Xenes are investigated. The consequences of the larger atomic radii on the atomic geometry, the energetic stability, and possible epitaxial preparations are discussed.

In the case of honeycomb atomic arrangements, the low-energy electronic excitations are ruled by almost linear bands. Spin–orbit coupling opens small gaps leading to Dirac fermions with finite effective masses. The linear bands give rise to an absorbance of the Xenes determined by the finestructure constant in the long-wavelength regime. While for vanishing photon energies the excitonic influence is still an open question, saddle-point excitons and excitons at $M_0$ van Hove singularities appear at higher frequencies. After opening substantial fundamental gaps by hydrogenation, the absorption edges of the Xanes, silicane, germanane, and stanane, are dominated by bound excitons with extremely large binding energies. Other chemical functionalizations, but also vertical electric fields, yield electronic structures ranging from topological to trivial insulators. Even a quantum spin Hall phase is predicted at room temperature. The topological character and the possible quantization of the spin Hall conductivity are studied versus gap inversion, chemical functionalization, and Rashba spin–orbit interaction. The drastic changes of the electronic properties of Xenes with chemical functionalization, interaction with the substrate, and external perturbations, open future opportunities for tailoring fundamental properties and, therefore, interesting applications in novel electronic and optoelectronic nanodevices.

Two-dimensional (2D) materials have displayed many remarkable physical properties, including 2D superconductivity, magnetism, and layer-dependent bandgaps. However, it is difficult for a single 2D material to meet complex practical requirements. Heterostructures obtained by vertically stacking different kinds of 2D materials have extensively attracted researchers’ attention because of their rich electronic features. With heterostructures, the constraints of lattice matching can be overcome. Meanwhile, high application potential has been explored for electronic and optoelectronic devices, including tunneling transistors, flexible electronics, and photodetectors. Specifically, graphene-based van der Waals heterostructures (vdWHs) by intercalation are emerging to realize various functional heterostructures-based electronic devices. Intercalating atoms under epitaxial graphene can efficiently decouple graphene from the substrate, and is expected to realize rich novel electronic properties in graphene. In this study, we systematically review the progress of the mono-element intercalation in graphene-based vdWHs, including the intercalation mechanism, intercalation-modified electronic properties, and the practical applications of 2D intercalated heterostructures. This work would inspire edge-cutting ideas in the scientific frontiers of 2D materials.

Topological insulators (TIs) characterized by gapless and spin-polarized conical band dispersion on their surfaces have been extensively studied over the last decade. This article reviews our recent works on ultrafast carrier dynamics of Sb₂Te₃-based nonmagnetic and magnetic TIs by utilizing state-of-the-art femtosecond time- and angle-resolved photoelectron spectroscopy. We have demonstrated that the electronic recovery time elongated from a few ps to $>$400 ps in case that the Dirac point was close to the Fermi energy in the series of (${\mathrm{Sb}}_{1-x}$${\mathrm{Bi}}_x$)₂Te₃. We also investigated how the magnetic-impurity affects the carrier dynamics in ferromagnetic ${\mathrm{Sb}}_{2-y}$$V_y$Te₃. It was found that the electronic recovery time drastically shortened from a few ps to $<$500 fs with increasing vanadium concentration. Since the lifetime of the nonequilibrated surface Dirac fermions can range from femto- to nano-second, Sb₂Te₃-based TIs would be promising for ultrafast spin switching and spin-polarized current generation device applications.

Monolayer two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides (TMDCs), provide a versatile platform for exploring novel physical phenomena at the 2D limit, and show great promise for next-generation electronic, optoelectronic, and quantum devices. To overcome the weak van der Waals interaction in the bulk layered crystal and achieve high quality single-crystal monolayers is a crucial task in top-down mechanical exfoliation. Tape exfoliation has long been the dominant approach to obtain single-crystal monolayers with high quality. More recently, there has been a fast development of using metals as an intermediate to enhance monolayer area and exfoliation yield. This review will provide a survey of mechanical exfoliation strategies of tape and metal-assisted exfoliations, particularly for the most popular graphene and TMDC materials. The interfacial interaction and lateral strain between monolayer and other materials such as oxides and metals play a crucial role in monolayer selectivity and yield. The challenges and opportunities will be highlighted for future development of exfoliating procedures to achieve large-area and high-quality 2D material monolayers and artificial stacks.

The emission of electron pairs from surfaces has the power to reveal details about the electron–electron interaction in condensed matter. This process, stimulated by a primary electron or photon beam, has been studied both in experiment and theory over the last two decades. An additional pathway, namely positron–electron pair emission, holds the promise to provide additional information. It is based on the notion that the Pauli exclusion principle does not need to be considered for this process.

We have commissioned a laboratory based positron source and performed a systematic study on a variety of solid surfaces. In a symmetric emission geometry we can explore the fact that positron and electron are distinguishable particles. Following fundamental symmetry arguments we have to expect that the available energy is shared unequally among positron and electron. Experimentally we observe such a behavior for all materials studied. We find an universal feature for all materials in the sense that on average the positron carries a larger fraction of the available energy. This is qualitatively accounted for by a simplified scattering model. Numerical results, which we obtained by a microscopic theory of positron–electron emission from surfaces, reveal however that there are also cases in which the electron carries more energy. Whether the positron or the electron is more energetic depends on details of the bound electron state and of the emission geometry. The coincidence intensity is strongly material dependent and there exists an almost monotonic relation between the singles and coincidence intensity. These results resemble the findings obtained in electron and photon stimulated electron pair emission. An additional reaction channel is the emission of an electron pair upon positron impact. We will discuss the energy distributions and the material dependence of the coincidence signal which shows similar features as those for positron–electron pairs.

In surface science, research traditionally employs macroscopically flat surfaces of single crystals. Curved surfaces have been applied more sporadically, but their history stretches back for many decades. Realization of the potential benefits and practical applications in surface physics and surface chemistry research progressed slowly in the 20th century. In more recent decades, research employing partial cylinders and dome-shaped crystals have found renewed interest. Modern surface sensitive techniques are being employed allowing the inherent large range of surface structures to reveal new insights. We briefly review the history, describe several types of surfaces and the range of structures they contain, suggest a notation for common types of curved surfaces, and discuss recent studies in more detail. We mainly focus on metal samples. We close with a short outlook.

The development of electron spin resonance (ESR) combined with scanning tunneling spectroscopy (STM) is undoubtedly one of the main experimental breakthroughs in surface science of the last decade thanks to joining the extraordinarily high energy resolution of ESR (nano-eV scale) with the single-atom spatial resolution of STM (sub-Ångström scale). While the experimental results have significantly grown with the number of groups that have succeeded in implementing the technique, the physical mechanism behind it is still unclear, with several different mechanisms proposed to explain it. Here, we start by revising the main characteristics of the experimental setups and observed features. Then, we review the main theoretical proposals, with both their strengths and weaknesses. One of our conclusions is that many of the proposed mechanisms share the same basic principles, the time-dependent electric field at the STM junction is modulating the coupling of the spin-polarized transport electrons with the local spin. This explains why these mechanims are essentially equivalent in a broad picture. We analyze the subtle differences between some of them and how they compare with the different experimental observations.

Ultra-wide bandgap materials show great promise as a solution to some of the limitations of current state of the art semiconductor technology. Among these, diamond has exhibited great potential for use in high-power, high-temperature electronics, as well as sensing and quantum applications. Yet, significant challenges associated with impurity doping of the constrained diamond lattice remain a primary impediment towards the development of diamond-based electronic devices. An alternative approach, used with continued success to unlock the use of diamond for semiconductor applications, has been that of ‘surface transfer doping’ - a process by which intrinsically insulating diamond surfaces can be made semiconducting without the need for traditional impurity doping. Here, we present a review of progress in surface transfer doping of diamond, both a history and current outlook of this highly exploitable attribute.