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Rigorous System Design 严谨的系统设计
Q1 Computer Science Pub Date : 2013-01-01 DOI: 10.1561/1000000028
Yangdong Deng
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引用次数: 1
Power Modeling and Characterization of Computing Devices: A Survey 计算设备的功率建模与表征:综述
Q1 Computer Science Pub Date : 2012-05-24 DOI: 10.1561/1000000022
S. Reda, Abdullah Nazma Nowroz
In this survey we describe the main research directions in pre-silicon power modeling and post-silicon power characterization. We review techniques in power modeling and characterization for three computing substrates: general-purpose processors, system-on-chip-based embedded systems, and field programmable gate arrays. We describe the basic principles that govern power consumption in digital circuits, and utilize these principles to describe high-level power modeling techniques for designs of the three computing substrates. Once a computing device is fabricated, direct measurements on the actual device reveal a great wealth of information about the device's power consumption under various operating conditions. We describe characterization techniques that integrate infrared imaging with electric current measurements to generate runtime power maps. The power maps can be used to validate design-time power models and to calibrate computer-aided design tools. We also describe empirical power characterization techniques for software power analysis and for adaptive power-aware computing. Finally, we provide a number of plausible future research directions for power modeling and characterization.
本文介绍了前硅功率建模和后硅功率表征的主要研究方向。我们回顾了三种计算基板的功率建模和表征技术:通用处理器、基于片上系统的嵌入式系统和现场可编程门阵列。我们描述了控制数字电路功耗的基本原理,并利用这些原理描述了三种计算基板设计的高级功率建模技术。一旦计算设备被制造出来,对实际设备的直接测量就会揭示出在各种操作条件下该设备功耗的大量信息。我们描述了将红外成像与电流测量相结合以生成运行时功率图的表征技术。功率图可用于验证设计时功率模型和校准计算机辅助设计工具。我们还描述了用于软件功率分析和自适应功率感知计算的经验功率表征技术。最后,我们为功率建模和表征提供了一些可行的未来研究方向。
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引用次数: 26
Discrete Circuit Optimization: Library Based Gate Sizing and Threshold Voltage Assignment 离散电路优化:基于库的栅极尺寸和阈值电压分配
Q1 Computer Science Pub Date : 2012-03-19 DOI: 10.1561/1000000019
John Lee, Puneet Gupta
Discrete gate sizing and threshold assignment are commonly used tools for optimizing digital circuits, and ideal methods for incremental optimization. The gate widths and threshold voltages, along with the gate lengths, can be adjusted to optimize power and delay. This monograph surveys this field, providing the background needed to perform research in the field. Concepts such as standard cell libraries, static timing analysis, and analytical delay and power models are explained, along with examples and data to help understand the tradeoffs involved. Comparative results are also provided to show the current state of the field. Full text available at: http://dx.doi.org/10.1561/1000000019
离散门尺寸和阈值分配是优化数字电路的常用工具,也是增量优化的理想方法。栅极宽度和阈值电压,以及栅极长度,可以调整以优化功率和延迟。这本专著调查了这个领域,提供了在这个领域进行研究所需的背景。解释了标准单元库、静态时序分析、分析延迟和功率模型等概念,以及帮助理解所涉及的权衡的示例和数据。还提供了比较结果,以显示该领域的当前状态。全文可在:http://dx.doi.org/10.1561/1000000019
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引用次数: 6
Parallel Circuit Simulation: A Historical Perspective and Recent Developments 并行电路仿真:一个历史的观点和最近的发展
Q1 Computer Science Pub Date : 2012-02-27 DOI: 10.1561/1000000020
Peng Li
The ability to predict circuit performance through simulation is at the core of any design process; it makes the implementation of complex integrated circuits technically feasible and economically viable while relaxing any heavy need for prototyping. Transistor-level circuit simulation is a fundamental computer-aided design technique that enables the design and verification of an extremely broad range of integrated circuits. With the proliferation of modern parallel processor architectures, leveraging parallel computing becomes a necessity and also an important avenue for facilitating large-scale circuit simulation. Parallel Circuit Simulation: A Historical Perspective and Recent Developments presents an in-depth discussion on parallel transistor-level circuit simulation algorithms and their implementation strategies on a variety of hardware platforms. While providing a rather complete perspective on historical and recent research developments, it also highlights key challenges and opportunities in developing efficient parallel simulation paradigms.
通过仿真预测电路性能的能力是任何设计过程的核心;它使复杂集成电路的实现在技术上可行,在经济上可行,同时放松了对原型设计的任何沉重需求。晶体管级电路仿真是一种基本的计算机辅助设计技术,可以设计和验证非常广泛的集成电路。随着现代并行处理器体系结构的激增,利用并行计算成为一种必要,也是促进大规模电路仿真的重要途径。并行电路仿真:一个历史的观点和最近的发展提出了一个深入讨论并行晶体管级电路仿真算法及其在各种硬件平台上的实现策略。在对历史和最近的研究发展提供相当完整的观点的同时,它也强调了开发高效并行仿真范例的关键挑战和机遇。
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引用次数: 15
Stochastic Computing 随机计算
Q1 Computer Science Pub Date : 2011-12-14 DOI: 10.1561/1000000021
J. Sartori, Rakesh Kumar
As device sizes shrink, manufacturing challenges at the device level are resulting in increased variability in physical circuit characteristics. Exponentially increasing circuit density has not only brought about concerns in the reliable manufacturing of circuits but also has exaggerated variations in dynamic circuit behavior. The resulting uncertainty in performance, power, and reliability imposed by compounding static and dynamic nondeterminism threatens the continuation of Moore's law, which has been arguably the primary driving force behind technology and innovation for decades. This situation is exacerbated by emerging computing applications, which exert considerable power and performance pressure on processors. Paradoxically, the problem is not nondeterminism, per se, but rather the approaches that designers have used to deal with it. The traditional response to variability has been to enforce determinism on an increasingly nondeterministic substrate through guardbands. As variability in circuit behavior increases, achieving deterministic behavior becomes increasingly expensive, as performance and energy penalties must be paid to ensure that all devices work correctly under all possible conditions. As such, the benefits of technology scaling are vanishing, due to the overheads of dealing with hardware variations through traditional means. Clearly, status quo cannot continue. Despite the above trends, the contract between hardware and software has, for the most part, remained unchanged. Software expects flawless results from hardware under all possible operating conditions. This rigid contract leaves potential performance gains and energy savings on the table, sacrificing efficiency in the common case in exchange for guaranteed correctness in all cases. However, as the marginal benefits of technology scaling continue to languish, a new vision for computing has begun to emerge. Rather than hiding variations under expensive guardbands, designers have begun to relax traditional correctness constraints and deliberately expose hardware variability to higher levels of the compute stack, thus tapping into potentially significant performance and energy benefits and also opening the potential for errors. Rather than paying the increasing price of hiding the true, stochastic nature of hardware, emerging stochastic computing techniques account for the inevitable variability and exploit it to increase efficiency. Stochastic computing techniques have been proposed at nearly all levels of the computing stack, including stochastic design optimizations, architecture frameworks, compiler optimizations, application transformations, programming language support, and testing techniques. In this monograph, we review work in the area of stochastic computing and discuss the promise and challenges of the field.
随着器件尺寸的缩小,器件级的制造挑战导致物理电路特性的可变性增加。电路密度的指数级增长不仅给电路的可靠性制造带来了问题,而且会使电路的动态行为变化过大。静态和动态的不确定性所带来的性能、功率和可靠性的不确定性威胁到摩尔定律的延续,而摩尔定律几十年来一直被认为是技术和创新背后的主要驱动力。新兴的计算应用程序加剧了这种情况,这些应用程序对处理器施加了相当大的功率和性能压力。矛盾的是,问题本身不是不确定性,而是设计师用来处理它的方法。对可变性的传统反应是通过保护带在日益不确定的基质上强制执行决定论。随着电路行为的可变性增加,实现确定性行为变得越来越昂贵,因为必须付出性能和能量损失来确保所有设备在所有可能的条件下都能正常工作。因此,由于通过传统方法处理硬件变化的开销,技术扩展的好处正在消失。显然,现状不能继续下去。尽管有上述趋势,硬件和软件之间的契约在很大程度上没有改变。软件期望硬件在所有可能的操作条件下产生完美的结果。这种严格的契约放弃了潜在的性能提升和能源节约,牺牲了普通情况下的效率,以换取在所有情况下保证的正确性。然而,随着技术扩展的边际效益持续减弱,计算的新愿景已经开始出现。设计人员不再将变化隐藏在昂贵的保护之下,而是开始放松传统的正确性约束,并故意将硬件可变性暴露给更高级别的计算堆栈,从而利用潜在的显著性能和能源优势,同时也打开了错误的可能性。新兴的随机计算技术没有为隐藏硬件的真实、随机特性而付出越来越大的代价,而是解释了不可避免的可变性,并利用它来提高效率。随机计算技术已经在几乎所有级别的计算堆栈中被提出,包括随机设计优化、架构框架、编译器优化、应用程序转换、编程语言支持和测试技术。在这本专著中,我们回顾了随机计算领域的工作,并讨论了该领域的前景和挑战。
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引用次数: 7
System-in-Package: Electrical and Layout Perspectives 系统封装:电气和布局的观点
Q1 Computer Science Pub Date : 2011-06-20 DOI: 10.1561/1000000014
Lei He, Shauki Elassaad, Yiyu Shi, Yu Hu, Wei Yao
The unquenched thirst for higher levels of electronic systems integration and higher performance goals has produced a plethora of design and business challenges that are threatening the success enjoyed so far as modeled by Moore's law. To tackle these challenges and meet the design needs of consumer electronics products such as those of cell phones, audio/video players, digital cameras that are composed of a number of different technologies, vertical system integration has emerged as a required technology to reduce the system board space and height in addition to the overall time-to-market and design cost. System-in-package (SiP) is a system integration technology that achieves the aforementioned needs in a scalable and cost-effective way, where multiple dies, passive components, and discrete devices are assembled, often vertically, in a package. This paper surveys the electrical and layout perspectives of SiP. It first introduces package technologies, and then presents SiP design flow and design exploration. Finally, the paper discusses details of beyond-die signal and power integrity and physical implementation such as I/O (input/output cell) placement and routing for redistribution layer, escape, and substrate.
对更高水平的电子系统集成和更高性能目标的永不止息的渴望已经产生了过多的设计和业务挑战,这些挑战正在威胁到迄今为止由摩尔定律建模的成功。为了应对这些挑战并满足消费电子产品的设计需求,例如由许多不同技术组成的手机,音频/视频播放器,数码相机等,垂直系统集成已经成为一种必要的技术,以减少系统板的空间和高度,以及整体上市时间和设计成本。系统级封装(SiP)是一种系统集成技术,以可扩展和经济高效的方式实现上述需求,其中多个芯片,无源元件和分立器件通常垂直组装在一个封装中。本文综述了SiP的电气设计和布局设计。首先介绍了封装技术,然后介绍了SiP的设计流程和设计探索。最后,本文讨论了晶片外信号和功率完整性以及物理实现的细节,例如I/O(输入/输出单元)的放置和重新分配层,逃逸和基板的路由。
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引用次数: 4
Three-dimensional Integrated Circuits: Design, EDA, and Architecture 三维集成电路:设计、EDA和架构
Q1 Computer Science Pub Date : 2011-05-21 DOI: 10.1561/1000000016
Guangyu Sun, Yibo Chen, Xiangyu Dong, J. Ouyang, Yuan Xie
The emerging three-dimensional (3D) integration technology is one of the promising solutions to overcome the barriers in interconnection scaling, thereby offering an opportunity to continue performance improvements using CMOS technology. As the fabrication of 3D integrated circuits has become viable, developing CAD tools and architectural techniques are imperative for the successful adoption of 3D integration technology. In this article, we first give a brief introduction on the 3D integration technology, and then review the EDA challenges and solutions that can enable the adoption of 3D ICs, and finally present design and architectural techniques on the application of 3D ICs, including a survey of various approaches to design future 3D ICs, leveraging the benefits of fast latency, higher bandwidth, and heterogeneous integration capability that are offered by 3D technology.
新兴的三维(3D)集成技术是克服互连扩展障碍的有前途的解决方案之一,从而为使用CMOS技术继续提高性能提供了机会。随着3D集成电路的制造变得可行,开发CAD工具和架构技术是成功采用3D集成技术的必要条件。在本文中,我们首先简要介绍了3D集成技术,然后回顾了可以采用3D集成电路的EDA挑战和解决方案,最后介绍了3D集成电路应用的设计和架构技术,包括设计未来3D集成电路的各种方法,利用3D技术提供的快速延迟、更高带宽和异构集成能力的优势。
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引用次数: 9
Manufacturability Aware Routing in Nanometer VLSI 纳米VLSI中可制造性感知路由
Q1 Computer Science Pub Date : 2010-04-15 DOI: 10.1561/1000000015
D. Pan, Minsik Cho, Kun Yuan
1: Introduction 2: CMP Aware Routing 3: Random-Defect Aware Routing 4: Lithography Aware Routing 5: Redundant Via Aware Routing 6: Antenna-Effect Aware Routing 7: Other DFM Issues in VLSI Routing 8: Conclusions. References
1:介绍2:CMP感知路由3:随机缺陷感知路由4:光刻感知路由5:冗余Via感知路由6:天线效应感知路由7:VLSI路由中的其他DFM问题8:结论。参考文献
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引用次数: 16
Radiation-induced Soft Errors: A Chip-level Modeling Perspective 辐射引起的软误差:芯片级建模视角
Q1 Computer Science Pub Date : 2010-02-01 DOI: 10.1561/1000000018
N. Seifert
Chip-level soft-error rate (SER) estimation can come from two sources: direct experimental measurement and simulation. Because SER mitigation decisions need to be made very early in the product design cycle, long before product Si is available, a simulation-based methodology of chip-level radiation-induced soft error rates that is fast and reasonably accurate is crucial to the reliability and success of the final product. The following contribution summarizes selected publications that are deemed relevant by the author to enable a truly chip-level radiation-induced soft error rate estimation methodology. Although the strategies and concepts described have microprocessors manufactured in bulk CMOS technologies in mind, there is no fundamental reason why they cannot be applied to other technologies and different types of integrated circuits (ICs).
芯片级软误码率估计有两种方法:直接实验测量和仿真。由于SER缓解决策需要在产品设计周期的早期做出,远在产品Si可用之前,因此基于芯片级辐射引起的软错误率的快速且合理准确的模拟方法对于最终产品的可靠性和成功至关重要。以下贡献总结了作者认为相关的选定出版物,以实现真正的芯片级辐射诱导的软错误率估计方法。尽管所描述的策略和概念考虑了批量CMOS技术制造的微处理器,但没有根本原因说明它们不能应用于其他技术和不同类型的集成电路(ic)。
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引用次数: 33
The Predictive Technology Model in the Late Silicon Era and Beyond 硅时代晚期及以后的预测技术模型
Q1 Computer Science Pub Date : 2010-01-06 DOI: 10.1561/1000000012
Yu Cao, A. Balijepalli, S. Sinha, Chi-Chao Wang, Wenping Wang, Wei Zhao
The aggressive scaling of CMOS technology has inevitably led to vastly increased power dissipation, process variability and reliability degradation, posing tremendous challenges to robust circuit design. To continue the success of integrated circuits, advanced design research must start in parallel with or even ahead of technology development. This new paradigm requires the Predictive Technology Model (PTM) for future technology generations, including nanoscale CMOS and post-silicon devices. This paper presents a comprehensive set of predictive modeling developments. Starting from the PTM of traditional CMOS devices, it extends to CMOS alternatives at the end of the silicon roadmap, such as strained Si, high-k/metal gate, and FinFET devices. The impact of process variation and the aging effect is further captured by modeling the device parameters under the influence. Beyond the silicon roadmap, the PTM outreaches to revolutionary devices, especially carbon-based transistor and interconnect, in order to support explorative design research. Overall, these predictive device models enable early stage design exploration with increasing technology diversity, helping shed light on the opportunities and challenges in the nanoelectronics era.
CMOS技术的积极扩展不可避免地导致功耗、工艺可变性和可靠性下降的大幅增加,对稳健的电路设计提出了巨大的挑战。为了使集成电路继续取得成功,先进的设计研究必须与技术发展并行,甚至先于技术发展。这种新模式需要未来技术世代的预测技术模型(PTM),包括纳米级CMOS和后硅器件。本文介绍了一套全面的预测建模发展。从传统CMOS器件的PTM开始,它延伸到硅路线图末端的CMOS替代品,如应变Si,高k/金属栅极和FinFET器件。通过对受工艺变化和老化效应影响的器件参数进行建模,进一步捕捉工艺变化和老化效应的影响。除了硅路线图之外,PTM还延伸到革命性器件,特别是碳基晶体管和互连,以支持探索性设计研究。总的来说,这些预测器件模型使早期设计探索具有越来越多的技术多样性,有助于揭示纳米电子时代的机遇和挑战。
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引用次数: 10
期刊
Foundations and Trends in Electronic Design Automation
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