Pub Date : 2005-06-19DOI: 10.1109/ICT.2005.1519955
T. Sekimoto, K. Kurosaki, H. Muta, S. Yamasaka
Half-Heusler compounds TiCoSb, ZrCoSb, HfCoSb were prepared by a spark plasma sintering (SFS) technique. Their thermoelectric and thermophysical properties were measured. The band gap energy estimated from the electrical resistivity becomes small in the following order: TiCoSb (0.16 and 0.40 eV), ZrCoSb (0.14 eV), HfCoSb (0.07 eV). The largest thermoelectric power is obtained as -304 /spl mu/V/K at 641 K for TiCoSb. The thermal conductivity and Debye temperature become small in the following order: TiCoSb, ZrCoSb, Hi7CoSb. The contribution to the thermal conductivity is mainly due to the lattice contribution. The maximum value of ZT is 0.020 at 986 K for ZrCoSb.
{"title":"Thermoelectric and thermophysical properties of TiCoSb, ZrCoSb, HfCoSb prepared by SPS","authors":"T. Sekimoto, K. Kurosaki, H. Muta, S. Yamasaka","doi":"10.1109/ICT.2005.1519955","DOIUrl":"https://doi.org/10.1109/ICT.2005.1519955","url":null,"abstract":"Half-Heusler compounds TiCoSb, ZrCoSb, HfCoSb were prepared by a spark plasma sintering (SFS) technique. Their thermoelectric and thermophysical properties were measured. The band gap energy estimated from the electrical resistivity becomes small in the following order: TiCoSb (0.16 and 0.40 eV), ZrCoSb (0.14 eV), HfCoSb (0.07 eV). The largest thermoelectric power is obtained as -304 /spl mu/V/K at 641 K for TiCoSb. The thermal conductivity and Debye temperature become small in the following order: TiCoSb, ZrCoSb, Hi7CoSb. The contribution to the thermal conductivity is mainly due to the lattice contribution. The maximum value of ZT is 0.020 at 986 K for ZrCoSb.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123343755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-19DOI: 10.1109/ICT.2005.1519963
T. Hendricks
Various advanced thermoelectric (TE) materials have properties that are inherently advantageous for particular TE energy recovery applications. Skutterudites, 0- and 1-dimensional quantum-well materials, and thin-film superlattice materials are providing enhanced opportunities for advanced TE energy recovery. This work demonstrates that early skutterudites materials in dual-material, segmented couple designs may be best suited for higher temperature applications associated with spacecraft power systems and very high temperature exhaust waste heat recovery in heavy vehicles. Early thin-film BxC/Si-SiGe materials appear to be well suited for mid-temperature ranges in exhaust waste heat recovery in heavy-duty and passenger vehicles. Potential power generation at specific exhaust temperature levels and for various heat exchanger performance levels are presented showing the current design sensitivities using each of these TE material sets. Mathematical relationships inherently linking optimum TE design variables and the thermal systems design (i.e., heat exchangers) are also investigated.
{"title":"Comparison of skutterudites and advanced thin-film B/sub 4/C/B/sub 9/C and Si/SiGe materials in advanced thermoelectric energy recovery systems","authors":"T. Hendricks","doi":"10.1109/ICT.2005.1519963","DOIUrl":"https://doi.org/10.1109/ICT.2005.1519963","url":null,"abstract":"Various advanced thermoelectric (TE) materials have properties that are inherently advantageous for particular TE energy recovery applications. Skutterudites, 0- and 1-dimensional quantum-well materials, and thin-film superlattice materials are providing enhanced opportunities for advanced TE energy recovery. This work demonstrates that early skutterudites materials in dual-material, segmented couple designs may be best suited for higher temperature applications associated with spacecraft power systems and very high temperature exhaust waste heat recovery in heavy vehicles. Early thin-film BxC/Si-SiGe materials appear to be well suited for mid-temperature ranges in exhaust waste heat recovery in heavy-duty and passenger vehicles. Potential power generation at specific exhaust temperature levels and for various heat exchanger performance levels are presented showing the current design sensitivities using each of these TE material sets. Mathematical relationships inherently linking optimum TE design variables and the thermal systems design (i.e., heat exchangers) are also investigated.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114112229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-19DOI: 10.1109/ICT.2005.1519933
T. Kamilov, D. K. Kabilov, I. S. Samiev, H. Husnutdinova, S. Dadamuhamedov, V. Klechkovskaya
Higher manganese silicide - MnSi/sub /spl sim/1.7/ was found as semiconducting and can be a promising thermoelectric material for high temperature applications. In this work, we report the growth of continuous higher manganese silicide film formed on silicon substrate. The growth technique of the higher manganese silicide films was described in detail. The element-phase composition of the silicide films was determined by scanning electron X-ray microanalyzer. Si and Mn doping depth profiles of the samples were presented. As a result of the experimental investigation we found optimal operating conditions to grow polycrystalline higher manganese silicide films. It was established that the grown silicide layer at the substrate temperature T/sub sub/= 1040-1060/spl deg/C consist predominantly of higher manganese suicide MnSi/sub 1.71-1.75/ grains with thickness ranging from 5 to 30 /spl mu/m and oriented along the substrate normal. The structure of grown silicide films was studied by electron diffraction, and the morphology of these films studied using scanning electron microscopy.
{"title":"Growth technique and structural properties of the higher manganese silicide films","authors":"T. Kamilov, D. K. Kabilov, I. S. Samiev, H. Husnutdinova, S. Dadamuhamedov, V. Klechkovskaya","doi":"10.1109/ICT.2005.1519933","DOIUrl":"https://doi.org/10.1109/ICT.2005.1519933","url":null,"abstract":"Higher manganese silicide - MnSi/sub /spl sim/1.7/ was found as semiconducting and can be a promising thermoelectric material for high temperature applications. In this work, we report the growth of continuous higher manganese silicide film formed on silicon substrate. The growth technique of the higher manganese silicide films was described in detail. The element-phase composition of the silicide films was determined by scanning electron X-ray microanalyzer. Si and Mn doping depth profiles of the samples were presented. As a result of the experimental investigation we found optimal operating conditions to grow polycrystalline higher manganese silicide films. It was established that the grown silicide layer at the substrate temperature T/sub sub/= 1040-1060/spl deg/C consist predominantly of higher manganese suicide MnSi/sub 1.71-1.75/ grains with thickness ranging from 5 to 30 /spl mu/m and oriented along the substrate normal. The structure of grown silicide films was studied by electron diffraction, and the morphology of these films studied using scanning electron microscopy.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121805969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-19DOI: 10.1109/ICT.2005.1519947
R. Funahashi, T. Mihara, M. Mikami, S. Urata, N. Ando
Different versions of a thermoelectric unicouple composed of p-type Ca/sub 2.7/Bi/sub 0.3/Co/sub 4/O/sub 9/ (Co-349) and n-type La/sub 0.9/Bi/sub 0.1/NiO/sub 3/ (Ni-113) bulks were constructed using Ag paste containing p- and n-type oxide powders, for connection between p- or n-legs and Ag electrodes, respectively. Open-circuit voltage V/sub 0/ of the unicouple connected using Ag paste containing 6wt% of the oxide powders reaches 100 mV at a hot-side temperature T/sub H/ of 1073 K and a temperature difference AT of 500 K in air. Internal resistance R/sub I/ of this unicouple is 26.2 m/spl Omega/ at 1073 K in air and decreases with increasing temperature. Maximum output power P/sub max/, evaluated using the formula P/sub max/ = V/sub 0//sup 2//4R/sub I/, is 94 mW at 1073 K (/spl Delta/T= 500 K) and increases with temperature. This value corresponds to a volume power density of 0.66 W/cm/sup 3/. The incorporation of oxide powders in Ag paste is shown to be effective to reduce the contact resistance and the thermal hysteresis effect at oxide/metal junctions. High power density is a strong point of thermoelectric generation. Exploitation of this salient characteristic would make thermoelectric modules promising candidates for mobile power applications. Here we show how power can be generated using a small thermoelectric module composed of 140 pairs of oxide thermoelectric unicouples. The module weighs 19.8 g and its dimensions are 53 mm long, 32 mm wide, and 5.0 mm thick. The hot-pressed thermoelectric oxide bulk materials used were connected with an Ag paste, incorporating 6wt% of oxide powder, and Ag electrodes. The module's V/sub 0/ increases with increasing hot-side temperature (T/sub H/) and reaches 4.5 V at a T/sub H/ of 1072 K in air. No deterioration in output power was seen when power generation was carried out ten times at a T/sub H/ of 723 K with intermediate cooling to room temperature. The module was successfully used to charge a lithium-ion battery in a mobile phone.
{"title":"Power generation of thermoelectric oxide modules","authors":"R. Funahashi, T. Mihara, M. Mikami, S. Urata, N. Ando","doi":"10.1109/ICT.2005.1519947","DOIUrl":"https://doi.org/10.1109/ICT.2005.1519947","url":null,"abstract":"Different versions of a thermoelectric unicouple composed of p-type Ca/sub 2.7/Bi/sub 0.3/Co/sub 4/O/sub 9/ (Co-349) and n-type La/sub 0.9/Bi/sub 0.1/NiO/sub 3/ (Ni-113) bulks were constructed using Ag paste containing p- and n-type oxide powders, for connection between p- or n-legs and Ag electrodes, respectively. Open-circuit voltage V/sub 0/ of the unicouple connected using Ag paste containing 6wt% of the oxide powders reaches 100 mV at a hot-side temperature T/sub H/ of 1073 K and a temperature difference AT of 500 K in air. Internal resistance R/sub I/ of this unicouple is 26.2 m/spl Omega/ at 1073 K in air and decreases with increasing temperature. Maximum output power P/sub max/, evaluated using the formula P/sub max/ = V/sub 0//sup 2//4R/sub I/, is 94 mW at 1073 K (/spl Delta/T= 500 K) and increases with temperature. This value corresponds to a volume power density of 0.66 W/cm/sup 3/. The incorporation of oxide powders in Ag paste is shown to be effective to reduce the contact resistance and the thermal hysteresis effect at oxide/metal junctions. High power density is a strong point of thermoelectric generation. Exploitation of this salient characteristic would make thermoelectric modules promising candidates for mobile power applications. Here we show how power can be generated using a small thermoelectric module composed of 140 pairs of oxide thermoelectric unicouples. The module weighs 19.8 g and its dimensions are 53 mm long, 32 mm wide, and 5.0 mm thick. The hot-pressed thermoelectric oxide bulk materials used were connected with an Ag paste, incorporating 6wt% of oxide powder, and Ag electrodes. The module's V/sub 0/ increases with increasing hot-side temperature (T/sub H/) and reaches 4.5 V at a T/sub H/ of 1072 K in air. No deterioration in output power was seen when power generation was carried out ten times at a T/sub H/ of 723 K with intermediate cooling to room temperature. The module was successfully used to charge a lithium-ion battery in a mobile phone.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130881371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-19DOI: 10.1109/ICT.2005.1519881
Q. Lu, J.X. Zhang, Y.Q. Liu, D. Liu, M.L. Zhou
Short-time solid-state reaction and spark plasma sintering method (SS-SPS) were combined to prepare single-phase polycrystalline Ca/sub 3/Co/sub 2/O/sub 6/ ceramic bulk, and effects of preparation condition and sintering technology were investigated in detail. Single-phase polycrystalline Ca/sub 3/Co/sub 2/O/sub 6/ powders with dendritic grains of about 1-3 /spl mu/m and Ca/sub 3/Co/sub 2/O/sub 6/ ceramic bulk with grain size of about 2 /spl mu/m were obtained respectively under 950/spl deg/C for 2 h in the solid reaction process and spark plasma sintering under 900/spl deg/C for 5 min. The ZT values of the polycrystalline product tend to increase sharply with increasing temperature and is 0.02 at 700/spl deg/C, it is expected to possess high conversion efficiency and is considered to be a potential candidate for use as a thermoelectric materials at high temperatures.
{"title":"Preparation and thermoelectric properties of Ca/sub 3/Co/sub 2/O/sub 6/ ceramic bulk","authors":"Q. Lu, J.X. Zhang, Y.Q. Liu, D. Liu, M.L. Zhou","doi":"10.1109/ICT.2005.1519881","DOIUrl":"https://doi.org/10.1109/ICT.2005.1519881","url":null,"abstract":"Short-time solid-state reaction and spark plasma sintering method (SS-SPS) were combined to prepare single-phase polycrystalline Ca/sub 3/Co/sub 2/O/sub 6/ ceramic bulk, and effects of preparation condition and sintering technology were investigated in detail. Single-phase polycrystalline Ca/sub 3/Co/sub 2/O/sub 6/ powders with dendritic grains of about 1-3 /spl mu/m and Ca/sub 3/Co/sub 2/O/sub 6/ ceramic bulk with grain size of about 2 /spl mu/m were obtained respectively under 950/spl deg/C for 2 h in the solid reaction process and spark plasma sintering under 900/spl deg/C for 5 min. The ZT values of the polycrystalline product tend to increase sharply with increasing temperature and is 0.02 at 700/spl deg/C, it is expected to possess high conversion efficiency and is considered to be a potential candidate for use as a thermoelectric materials at high temperatures.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130882197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-19DOI: 10.1109/ICT.2005.1519894
K. Aaron, Xiaofeng Tang, T. Tritt
The characterization of single crystals often involves working with very small samples because of natural size limitations and the difficulties involved in the synthesis of large single crystals. The measurement of the thermal conductivity of small samples has been a formidable challenge for many years due to the low thermal conductance and the low mechanical strength of the sample. One of the methods developed to address this problem is the Parallel Thermal Conductance (PTC) technique. We have attempted to measure the in-plane thermal conductivity of single crystals using the PTC technique. In this paper we describe the PTC technique and provide results of measurement on standards as well as preliminary measurements on NaxCo2O4 single crystals.
{"title":"Measurement of the in-plane thermal conductivity of single crystals by the parallel thermal conductance technique","authors":"K. Aaron, Xiaofeng Tang, T. Tritt","doi":"10.1109/ICT.2005.1519894","DOIUrl":"https://doi.org/10.1109/ICT.2005.1519894","url":null,"abstract":"The characterization of single crystals often involves working with very small samples because of natural size limitations and the difficulties involved in the synthesis of large single crystals. The measurement of the thermal conductivity of small samples has been a formidable challenge for many years due to the low thermal conductance and the low mechanical strength of the sample. One of the methods developed to address this problem is the Parallel Thermal Conductance (PTC) technique. We have attempted to measure the in-plane thermal conductivity of single crystals using the PTC technique. In this paper we describe the PTC technique and provide results of measurement on standards as well as preliminary measurements on NaxCo2O4 single crystals.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131202890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-19DOI: 10.1109/ICT.2005.1519897
W. Sams, N. Lowhorn, T. Tritt, E. Abbott, J. Kolis
Titanium disulfide is a single-crystal semiconductor, which has been investigated for possible application in thermoelectric devices. Previous research has shown that TiS2 possesses thermopower values that are comparable to that of bismuth telluride, the standard thermoelectric material. Unfortunately, large thermal conductivity impedes the thermoelectric efficiency, leading to a ZT several times smaller than that of Bi2Te3. This research is concerned with synthesis of doped TiS2 systems to see if the thermal conductivity can be reduced while maintaining a relatively high thermopower. This paper is part of ongoing research into this system and presents the first phase of the experiment. Isovalent and n-type dopants from the transition metals, semimetals, and rare earth elements were used in syntheses to find doped systems that maintained high thermopower values. Thermal conductivity measurements of the systems which maintain the high initial thermopower values of TiS2 will be the next phase of the research.
{"title":"Doping studies and thermoelectric properties of TiS/sub 2/","authors":"W. Sams, N. Lowhorn, T. Tritt, E. Abbott, J. Kolis","doi":"10.1109/ICT.2005.1519897","DOIUrl":"https://doi.org/10.1109/ICT.2005.1519897","url":null,"abstract":"Titanium disulfide is a single-crystal semiconductor, which has been investigated for possible application in thermoelectric devices. Previous research has shown that TiS2 possesses thermopower values that are comparable to that of bismuth telluride, the standard thermoelectric material. Unfortunately, large thermal conductivity impedes the thermoelectric efficiency, leading to a ZT several times smaller than that of Bi2Te3. This research is concerned with synthesis of doped TiS2 systems to see if the thermal conductivity can be reduced while maintaining a relatively high thermopower. This paper is part of ongoing research into this system and presents the first phase of the experiment. Isovalent and n-type dopants from the transition metals, semimetals, and rare earth elements were used in syntheses to find doped systems that maintained high thermopower values. Thermal conductivity measurements of the systems which maintain the high initial thermopower values of TiS2 will be the next phase of the research.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132700104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-19DOI: 10.1109/ICT.2005.1519980
T. He, T. G. Calvarese, J.-Z. Chen, H. D. Rosenfeld, R. Small, J. Krajewski, M. Subramanian
The thermal conductivity of /spl alpha/-Mn is as low as Bi metal and is apparently due its complex crystal structure. The effect of Mn addition (doping and substitution) on the thermoelectric properties of rare earth intermetallics and skutterudites are explored. Although rare earth intermetallics such as YbAl/sub 3/, CePd/sub 3/ show high Seebeck coefficients and electrical conductivities resulting in very high power factors, the high inherent thermal conductivities make them not suitable for thermoelectrics. Mn doping in the YbAl/sub 3/ structure substantially lowers the lattice thermal conductivity without unduly decreasing the power factor thereby increasing the figure of merit (ZT). We have also substituted Mn for Co in CoSb/sub 3/ (without rattlers) resulting in the enhancement of ZT. Although modest enhancement of ZT is shown, this study indicates that the Mn could play an important role in the design strategy of high efficiency thermoelectrics.
{"title":"Origin of low thermal conductivity in /spl alpha/-Mn: enhancing the ZT of YbAl/sub 3/ and CoSb/sub 3/ through Mn addition","authors":"T. He, T. G. Calvarese, J.-Z. Chen, H. D. Rosenfeld, R. Small, J. Krajewski, M. Subramanian","doi":"10.1109/ICT.2005.1519980","DOIUrl":"https://doi.org/10.1109/ICT.2005.1519980","url":null,"abstract":"The thermal conductivity of /spl alpha/-Mn is as low as Bi metal and is apparently due its complex crystal structure. The effect of Mn addition (doping and substitution) on the thermoelectric properties of rare earth intermetallics and skutterudites are explored. Although rare earth intermetallics such as YbAl/sub 3/, CePd/sub 3/ show high Seebeck coefficients and electrical conductivities resulting in very high power factors, the high inherent thermal conductivities make them not suitable for thermoelectrics. Mn doping in the YbAl/sub 3/ structure substantially lowers the lattice thermal conductivity without unduly decreasing the power factor thereby increasing the figure of merit (ZT). We have also substituted Mn for Co in CoSb/sub 3/ (without rattlers) resulting in the enhancement of ZT. Although modest enhancement of ZT is shown, this study indicates that the Mn could play an important role in the design strategy of high efficiency thermoelectrics.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128817864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-19DOI: 10.1109/ICT.2005.1519903
T. Souma, M. Ohtaki
High purity CoSb3 bulk crystals have been successfully synthesized by Sb self-flux method and a relation between reaction conditions and chemical composition on the method has been systematically analyzed by powder XRD study using the Rietveld analysis. Sb self flux method at 923 K using 100 mesh Co elements can directly provide a single phase CoSb3 bulk crystal in a brief time of 10 h. Advantages of Sb self-flux methods will be discussed compared with other preparation methods.
{"title":"Synthesis and rietveld analysis for CoSb/sub 3/ compounds prepared by Sb self-flux method","authors":"T. Souma, M. Ohtaki","doi":"10.1109/ICT.2005.1519903","DOIUrl":"https://doi.org/10.1109/ICT.2005.1519903","url":null,"abstract":"High purity CoSb3 bulk crystals have been successfully synthesized by Sb self-flux method and a relation between reaction conditions and chemical composition on the method has been systematically analyzed by powder XRD study using the Rietveld analysis. Sb self flux method at 923 K using 100 mesh Co elements can directly provide a single phase CoSb3 bulk crystal in a brief time of 10 h. Advantages of Sb self-flux methods will be discussed compared with other preparation methods.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115336305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-19DOI: 10.1109/ICT.2005.1519920
V. Zaitsev, M. Fedorov, E. A. Gurieva, I. Eremin, P. Konstantinov, A. Samunin, M. Vedernikov
The paper presents the results of extensive experimental and theoretical study of the solid solutions in the system Mg/sub 2/Si-Mg/sub 2/Sn. It is shown that the system is a favorable base for the creation of excellent thermoelectrics with band type of conductivity. The reproducible results are obtained for Seebeck and Hall coefficients, electrical and thermal conductivity in the wide temperature range 77-850 K for the samples of various solid solution composition and various electron concentration (up to 5/spl middot/10/sup 20/ cm/sup -3/). At optimum solid solution composition and electron concentration the thermoelectric of ZT/sub max/=1.1 is produced reliably. Average ZT value in the temperature range 350-830 K is about 0.8 for this material. It is shown that the high value of ZT is achieved due to some features of band structure of these materials. It is of great interest that these thermoelectrically remarkable alloys have simple crystallographic structure, made by a traditional technology and are formed from very cheap and ecologically friendly components.
{"title":"Thermoelectrics of n-type with ZT > 1 based on Mg/sub 2/Si-Mg/sub 2/Sn solid solutions","authors":"V. Zaitsev, M. Fedorov, E. A. Gurieva, I. Eremin, P. Konstantinov, A. Samunin, M. Vedernikov","doi":"10.1109/ICT.2005.1519920","DOIUrl":"https://doi.org/10.1109/ICT.2005.1519920","url":null,"abstract":"The paper presents the results of extensive experimental and theoretical study of the solid solutions in the system Mg/sub 2/Si-Mg/sub 2/Sn. It is shown that the system is a favorable base for the creation of excellent thermoelectrics with band type of conductivity. The reproducible results are obtained for Seebeck and Hall coefficients, electrical and thermal conductivity in the wide temperature range 77-850 K for the samples of various solid solution composition and various electron concentration (up to 5/spl middot/10/sup 20/ cm/sup -3/). At optimum solid solution composition and electron concentration the thermoelectric of ZT/sub max/=1.1 is produced reliably. Average ZT value in the temperature range 350-830 K is about 0.8 for this material. It is shown that the high value of ZT is achieved due to some features of band structure of these materials. It is of great interest that these thermoelectrically remarkable alloys have simple crystallographic structure, made by a traditional technology and are formed from very cheap and ecologically friendly components.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115515324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：