Pub Date : 2004-11-08DOI: 10.1109/EDMO.2004.1412409
Z. Gu, Zhigong Wang, A. Thiede, R. Tao, Li Wang
This paper gives the first detailed analyses and derivations of the source capacitively coupled compensation technique. The applications of its useful bandpass and phase-lead features, such as high frequency amplitude compensation amplifier, positive feedback ring oscillator and phase-lead compensation ring oscillator are presented. With this compensation technique the amplifier shows significant bandwidth improvement. The constructed 5 GHz positive feedback (PFB) ring oscillator represents 2-9 dB noise-power product advantage below 10 MHz frequency offset. The compensated negative feedback (NFB) ring oscillator prototype in 0.18 /spl mu/m CMOS process achieves record 10 GHz oscillation frequency.
{"title":"Source capacitively coupled compensation technique and its applications","authors":"Z. Gu, Zhigong Wang, A. Thiede, R. Tao, Li Wang","doi":"10.1109/EDMO.2004.1412409","DOIUrl":"https://doi.org/10.1109/EDMO.2004.1412409","url":null,"abstract":"This paper gives the first detailed analyses and derivations of the source capacitively coupled compensation technique. The applications of its useful bandpass and phase-lead features, such as high frequency amplitude compensation amplifier, positive feedback ring oscillator and phase-lead compensation ring oscillator are presented. With this compensation technique the amplifier shows significant bandwidth improvement. The constructed 5 GHz positive feedback (PFB) ring oscillator represents 2-9 dB noise-power product advantage below 10 MHz frequency offset. The compensated negative feedback (NFB) ring oscillator prototype in 0.18 /spl mu/m CMOS process achieves record 10 GHz oscillation frequency.","PeriodicalId":424447,"journal":{"name":"12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004.","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121152351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-11-08DOI: 10.1109/EDMO.2004.1412397
Z. Gu, A. Thiede
This paper analyzes the cascading effect of the quality factors (Qs) under various definitions. Under the appropriate definitions, the effective Q of the filter with cascaded stages, the relationship between the noise rejection of the positive feedback (PFB) oscillator constructed with an identical bandpass gain stages and the cascading effect of Qs have been investigated. Good phase noise performance of around -102 dBc/Hz@ 1 MHz has been measured from a 4-stage 10 GHz PFB ring LC oscillator fabricated in CMOS process, where only low Q passive components are possible to be integrated.
{"title":"Cascaded quality factor of ring LC oscillators","authors":"Z. Gu, A. Thiede","doi":"10.1109/EDMO.2004.1412397","DOIUrl":"https://doi.org/10.1109/EDMO.2004.1412397","url":null,"abstract":"This paper analyzes the cascading effect of the quality factors (Qs) under various definitions. Under the appropriate definitions, the effective Q of the filter with cascaded stages, the relationship between the noise rejection of the positive feedback (PFB) oscillator constructed with an identical bandpass gain stages and the cascading effect of Qs have been investigated. Good phase noise performance of around -102 dBc/Hz@ 1 MHz has been measured from a 4-stage 10 GHz PFB ring LC oscillator fabricated in CMOS process, where only low Q passive components are possible to be integrated.","PeriodicalId":424447,"journal":{"name":"12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004.","volume":"152 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116903558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-11-08DOI: 10.1109/EDMO.2004.1412405
S. Boumaiza, F. Ghannouchi
In this paper, a realistic, accurate, versatile and thermal-free complex behavior test bed appropriate for dynamic nonlinear characterization of 3G transmitters is proposed. The obtained results show noticeable discrepancies compared to those measured using CW signals and vector network analyzers for both AM/AM and AM/PM curves. The accuracy of the dynamic characterization results obtained using the test-bed was firstly demonstrated through the deduction of a base band predistortion function intended for enhancing the power efficiency and linearity trade-off of the transmitter. Then, its second contributory was proven through the development of a tables-based (AM/AM and AM/PM) nonlinear behavior model that was able to precisely predict the output spectrum of the transmitter. The test bed was also used for the investigation of the memory effect in RF transmitters that become extensive as much as input signal bandwidth and operation power increase.
{"title":"Dynamic nonlinear distortion characterization of wireless radio transmitters","authors":"S. Boumaiza, F. Ghannouchi","doi":"10.1109/EDMO.2004.1412405","DOIUrl":"https://doi.org/10.1109/EDMO.2004.1412405","url":null,"abstract":"In this paper, a realistic, accurate, versatile and thermal-free complex behavior test bed appropriate for dynamic nonlinear characterization of 3G transmitters is proposed. The obtained results show noticeable discrepancies compared to those measured using CW signals and vector network analyzers for both AM/AM and AM/PM curves. The accuracy of the dynamic characterization results obtained using the test-bed was firstly demonstrated through the deduction of a base band predistortion function intended for enhancing the power efficiency and linearity trade-off of the transmitter. Then, its second contributory was proven through the development of a tables-based (AM/AM and AM/PM) nonlinear behavior model that was able to precisely predict the output spectrum of the transmitter. The test bed was also used for the investigation of the memory effect in RF transmitters that become extensive as much as input signal bandwidth and operation power increase.","PeriodicalId":424447,"journal":{"name":"12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004.","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124143793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-11-08DOI: 10.1109/EDMO.2004.1412401
T. Naeve, M. Hohenbild, P. Seegebrecht
In this work, we present a new physically based model of an integrated photodetector as part of a BD-system (blu-ray-disc, /spl lambda/=405 nm). This model takes care on the transport phenomena within the photodiode as well as of the RC time constant of the device. The model properly predicts the photocurrent of the diode and can be used e.g. as AHDL model in commercial circuit simulators for dc, ac and transient simulations. To demonstrate the accuracy of the model we have compared our results with simulation data using the numerical device simulator Atlas/Silvaco.
{"title":"A quasi-2-dimensional photodiode model for high-speed short-wavelength applications","authors":"T. Naeve, M. Hohenbild, P. Seegebrecht","doi":"10.1109/EDMO.2004.1412401","DOIUrl":"https://doi.org/10.1109/EDMO.2004.1412401","url":null,"abstract":"In this work, we present a new physically based model of an integrated photodetector as part of a BD-system (blu-ray-disc, /spl lambda/=405 nm). This model takes care on the transport phenomena within the photodiode as well as of the RC time constant of the device. The model properly predicts the photocurrent of the diode and can be used e.g. as AHDL model in commercial circuit simulators for dc, ac and transient simulations. To demonstrate the accuracy of the model we have compared our results with simulation data using the numerical device simulator Atlas/Silvaco.","PeriodicalId":424447,"journal":{"name":"12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004.","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127784874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-11-08DOI: 10.1109/EDMO.2004.1412398
L. Rodoni, T. Morf, F. Ellinger, G. von Buren, H. Jackel
In this paper, an integrated 2-to-1 selector multiplexer in 90-nm complementary metal-oxide semiconductor (CMOS) digital technology is presented. The multiplexer is based on a differential Gilbert-cell structure. Peaking inductors are used to improve the bandwidth. At a supply voltage of 1.2 V, a speed performance of 24 Gb/s is achieved. The circuit core consumes only 10 mA. Common drain output buffers allow measurements at 50 /spl Omega/.
{"title":"Low-power-consuming 24-Gb/s multiplexer in 90-nm CMOS for optical transceivers","authors":"L. Rodoni, T. Morf, F. Ellinger, G. von Buren, H. Jackel","doi":"10.1109/EDMO.2004.1412398","DOIUrl":"https://doi.org/10.1109/EDMO.2004.1412398","url":null,"abstract":"In this paper, an integrated 2-to-1 selector multiplexer in 90-nm complementary metal-oxide semiconductor (CMOS) digital technology is presented. The multiplexer is based on a differential Gilbert-cell structure. Peaking inductors are used to improve the bandwidth. At a supply voltage of 1.2 V, a speed performance of 24 Gb/s is achieved. The circuit core consumes only 10 mA. Common drain output buffers allow measurements at 50 /spl Omega/.","PeriodicalId":424447,"journal":{"name":"12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004.","volume":"197 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124340402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-11-08DOI: 10.1109/EDMO.2004.1412400
K. Schneider, H. Zimmermann
An overview over the development of burst-mode receivers is given. The compared receivers are designed in CMOS, but also in SiGe. Burst-mode receivers with external pin photodiodes as well as a design with an avalanche photodiode (APD) are summarized and compared.
{"title":"Optical burst-mode receivers for passive optical networks","authors":"K. Schneider, H. Zimmermann","doi":"10.1109/EDMO.2004.1412400","DOIUrl":"https://doi.org/10.1109/EDMO.2004.1412400","url":null,"abstract":"An overview over the development of burst-mode receivers is given. The compared receivers are designed in CMOS, but also in SiGe. Burst-mode receivers with external pin photodiodes as well as a design with an avalanche photodiode (APD) are summarized and compared.","PeriodicalId":424447,"journal":{"name":"12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004.","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123904105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-11-08DOI: 10.1109/EDMO.2004.1412395
D. Foty, G. Gildenblat
In this paper, the critical importance of scaling theory to the success of CMOS technology can be reviewed and evaluated. The history of CMOS shows that scaling theory has been the dominant theme, but that the evolution of the technology has followed different directions at different times due to constraints imposed by scaling theory. This situation is actually best understood by comparison with the theory of punctuated equilibrium, which is a familiar concept in evolutionary biology. The state of present-day constraints are considered, followed by discussion of some possible options for continuing the progress of CMOS into the future.
{"title":"CMOS scaling theory - why our \"theory of everything\" still works, and what that means for the future","authors":"D. Foty, G. Gildenblat","doi":"10.1109/EDMO.2004.1412395","DOIUrl":"https://doi.org/10.1109/EDMO.2004.1412395","url":null,"abstract":"In this paper, the critical importance of scaling theory to the success of CMOS technology can be reviewed and evaluated. The history of CMOS shows that scaling theory has been the dominant theme, but that the evolution of the technology has followed different directions at different times due to constraints imposed by scaling theory. This situation is actually best understood by comparison with the theory of punctuated equilibrium, which is a familiar concept in evolutionary biology. The state of present-day constraints are considered, followed by discussion of some possible options for continuing the progress of CMOS into the future.","PeriodicalId":424447,"journal":{"name":"12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004.","volume":"25 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120986520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-11-08DOI: 10.1109/EDMO.2004.1412388
A. Rezazadeh
Multilayer monolithic microwave integrated circuit (MMIC) structures using polyimide as insulating dielectric layer has been utilised to demonstrate a range of MMICs. The polyimide layer formation, curing and dry etching processes have been investigated in an attempt to obtain high quality dielectric layers suitable for MMICs applications. By employing this technique, MMIC design and circuit routings become much easier and conventional microstrip transmission lines and lumped passive components can be realised with effective use of the substrate material.
{"title":"Design and technology of 3D MMICs using multilayer structures","authors":"A. Rezazadeh","doi":"10.1109/EDMO.2004.1412388","DOIUrl":"https://doi.org/10.1109/EDMO.2004.1412388","url":null,"abstract":"Multilayer monolithic microwave integrated circuit (MMIC) structures using polyimide as insulating dielectric layer has been utilised to demonstrate a range of MMICs. The polyimide layer formation, curing and dry etching processes have been investigated in an attempt to obtain high quality dielectric layers suitable for MMICs applications. By employing this technique, MMIC design and circuit routings become much easier and conventional microstrip transmission lines and lumped passive components can be realised with effective use of the substrate material.","PeriodicalId":424447,"journal":{"name":"12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004.","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125819622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-11-08DOI: 10.1109/EDMO.2004.1412403
K. Schneider, M. Fortsch, H. Zimmermann
A very low-power optoelectronic integrated circuit (OEIC) for highly parallel optical receivers is introduced. It is necessary to minimize the power consumption of each optical receiver to enable an array of receivers. An integrated photodiode with low input capacitance takes care of the detection of visible and near infrared light. Rise- and fall times of t/sub r/=470 ps and t/sub f/=421 ps, with an overall (optical and electrical) power consumption of 1.77 mW at a data rate of 500 Mb/s down to a power consumption of 0.66 mW at 40 Mb/s, were achieved. Due to the pin photodiode, a standard 0.6 /spl mu/m BiCMOS process is used, which needs only one minor process modification for the integration of the pin photodiode.
{"title":"Low-power optoelectronic IC","authors":"K. Schneider, M. Fortsch, H. Zimmermann","doi":"10.1109/EDMO.2004.1412403","DOIUrl":"https://doi.org/10.1109/EDMO.2004.1412403","url":null,"abstract":"A very low-power optoelectronic integrated circuit (OEIC) for highly parallel optical receivers is introduced. It is necessary to minimize the power consumption of each optical receiver to enable an array of receivers. An integrated photodiode with low input capacitance takes care of the detection of visible and near infrared light. Rise- and fall times of t/sub r/=470 ps and t/sub f/=421 ps, with an overall (optical and electrical) power consumption of 1.77 mW at a data rate of 500 Mb/s down to a power consumption of 0.66 mW at 40 Mb/s, were achieved. Due to the pin photodiode, a standard 0.6 /spl mu/m BiCMOS process is used, which needs only one minor process modification for the integration of the pin photodiode.","PeriodicalId":424447,"journal":{"name":"12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004.","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123718880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-11-08DOI: 10.1109/EDMO.2004.1412410
F. D. Makaya, D. Chatelain, Lukas W. Snyman
The aim of this research was to develop a mobile robot, exploiting the GSM and GPRS technologies in an existing mobile telephony network for remote control and communication purposes. The robot (MGM1) is used as a technology demonstrator in centres and exhibitions with the purpose of making known to the public the importance of services such as SMS, MMS, Bluetooth and Web surfing using a phone browser. The robot is controlled remotely via GPRS using a mobile phone as a command centre. It is able to receive SMS and MMS messages sent to it and then reply back. Also, it takes pictures and sends these out on request as MMS. The work presented in this paper is about the system design and performance assessment, with a discussion of some of the main system sub-units.
{"title":"Design and performance assessment of a prototype wireless controlled robot","authors":"F. D. Makaya, D. Chatelain, Lukas W. Snyman","doi":"10.1109/EDMO.2004.1412410","DOIUrl":"https://doi.org/10.1109/EDMO.2004.1412410","url":null,"abstract":"The aim of this research was to develop a mobile robot, exploiting the GSM and GPRS technologies in an existing mobile telephony network for remote control and communication purposes. The robot (MGM1) is used as a technology demonstrator in centres and exhibitions with the purpose of making known to the public the importance of services such as SMS, MMS, Bluetooth and Web surfing using a phone browser. The robot is controlled remotely via GPRS using a mobile phone as a command centre. It is able to receive SMS and MMS messages sent to it and then reply back. Also, it takes pictures and sends these out on request as MMS. The work presented in this paper is about the system design and performance assessment, with a discussion of some of the main system sub-units.","PeriodicalId":424447,"journal":{"name":"12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004.","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117249262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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