L. Bulyk, O. Antonyak, Y. Chornodolskyy, R. Gamernyk, T. Demkiv, V. Vistovskyy, A. Suchocki, A. Voloshinovskii
{"title":"Conductivity of CsPbBr3 at ambient conditions","authors":"L. Bulyk, O. Antonyak, Y. Chornodolskyy, R. Gamernyk, T. Demkiv, V. Vistovskyy, A. Suchocki, A. Voloshinovskii","doi":"10.30970/jps.25.4801","DOIUrl":"https://doi.org/10.30970/jps.25.4801","url":null,"abstract":"","PeriodicalId":43482,"journal":{"name":"Journal of Physical Studies","volume":"21 1","pages":""},"PeriodicalIF":0.5,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90409285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this study, photoluminescence (PL) measurements are performed for analyzing shallow acceptor states in undoped cadmium telluride (cid:28)lms on gallium arsenide substrates. PL and time-resolved photoluminescence spectra are analyzed in the vicinity of a 1.55 eV band. The residual impurity concentration in the undoped cadmium telluride (cid:28)lm is greater than 1.5 × 10 18 cm − 3 . By analyzing the peak shift of the 1.55 eV band as a function of time after pulsed excitation, the bound-to-bound reaction constant for the undoped cadmium telluride (cid:28)lm on a gallium arsenide substrate is estimated to be 2.4 × 10 7 s − 1 .
{"title":"Photoluminescence analysis of shallow acceptor in CdTe films on GaAs(100) substrates","authors":"C. Onodera, Masaaki Yoshida","doi":"10.30970/jps.25.3701","DOIUrl":"https://doi.org/10.30970/jps.25.3701","url":null,"abstract":"In this study, photoluminescence (PL) measurements are performed for analyzing shallow acceptor states in undoped cadmium telluride (cid:28)lms on gallium arsenide substrates. PL and time-resolved photoluminescence spectra are analyzed in the vicinity of a 1.55 eV band. The residual impurity concentration in the undoped cadmium telluride (cid:28)lm is greater than 1.5 × 10 18 cm − 3 . By analyzing the peak shift of the 1.55 eV band as a function of time after pulsed excitation, the bound-to-bound reaction constant for the undoped cadmium telluride (cid:28)lm on a gallium arsenide substrate is estimated to be 2.4 × 10 7 s − 1 .","PeriodicalId":43482,"journal":{"name":"Journal of Physical Studies","volume":"46 1","pages":""},"PeriodicalIF":0.5,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84650847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yuriy P. Ladikov-Roev, S. Cheremnykh, A. Voitsekhovska, Y. Selivanov
On the assumption of the existence of a vortex layer in the solar atmosphere, the interaction of chromospheric jets with individual vortices is studied. Although all the models assume a penetration of the jet into a quiet atmosphere, however, perturbations caused by the rise and fall of a multitude of jets cannot fail to cause vortex ows in a di erentially rotating solar atmosphere, as occurs in the case of hurricanes and tornadoes on the Earth. When interacting with a jet, the vortex can create thrust applied to the jet and directed upwards. The thrust complements the action of the initial pulse on the jet and the same elevation height can be achieved with lower initial velocities. Due to the action of the vortex, the jet rises both higher and during a longer time than, for example, in the case of a ballistic mechanism only. A jet, when it penetrates the vortex, can expand due to the centrifugal acceleration caused by this vortex. Both e ects can modify the movement of the jets and, therefore, can contribute to the ne structure of the solar wind.
{"title":"Solar atmospheric jet propagation in a vortex field","authors":"Yuriy P. Ladikov-Roev, S. Cheremnykh, A. Voitsekhovska, Y. Selivanov","doi":"10.30970/JPS.25.1902","DOIUrl":"https://doi.org/10.30970/JPS.25.1902","url":null,"abstract":"On the assumption of the existence of a vortex layer in the solar atmosphere, the interaction of chromospheric jets with individual vortices is studied. Although all the models assume a penetration of the jet into a quiet atmosphere, however, perturbations caused by the rise and fall of a multitude of jets cannot fail to cause vortex ows in a di erentially rotating solar atmosphere, as occurs in the case of hurricanes and tornadoes on the Earth. When interacting with a jet, the vortex can create thrust applied to the jet and directed upwards. The thrust complements the action of the initial pulse on the jet and the same elevation height can be achieved with lower initial velocities. Due to the action of the vortex, the jet rises both higher and during a longer time than, for example, in the case of a ballistic mechanism only. A jet, when it penetrates the vortex, can expand due to the centrifugal acceleration caused by this vortex. Both e ects can modify the movement of the jets and, therefore, can contribute to the ne structure of the solar wind.","PeriodicalId":43482,"journal":{"name":"Journal of Physical Studies","volume":"53 1","pages":""},"PeriodicalIF":0.5,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89815906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electrical conductivity and thermopower of high-entropy AlCoCrCuFeNi liquid alloys","authors":"M. Dufanets, Y. Plevachuk, V. Sklyarchuk","doi":"10.30970/jps.25.3601","DOIUrl":"https://doi.org/10.30970/jps.25.3601","url":null,"abstract":"","PeriodicalId":43482,"journal":{"name":"Journal of Physical Studies","volume":"1 1","pages":""},"PeriodicalIF":0.5,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75974551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In n-Si single crystals, the scattering anisotropy of charge carriers has been studied depending on the compensation level of impurities. Theoretical calculations were carried out within the framework of the anisotropic scattering theory. The electrical conductivity, the Hall e(cid:27)ect, and the tensoresistance of silicon crystals with various di(cid:27)erence and summary concentrations of impurities were measured. It was established that an increase in the scattering anisotropy in n-Si crystals is practically independent of the degree of their compensation, but is associated only with an increase in the total concentration of ionized impurities. The intra-valley anisotropy of the scattering of charge carriers on dislocations as scatterers was studied for a (cid:28)xed location of the current with respect to the direction of their preferred orientation. Dislocations (having a distinguished orientation) were introduced into the n-Si crystal by the plastic bending deformation at 1073 K. It has been revealed that in n-Si crystals, the intra-valley anisotropy of the scattering on dislocations is much higher than the scattering anisotropy on the charged point defects. silicon, Hall e(cid:27)ect, tensoresistance, compensation degree, scattering anisotropy, dislocations.
{"title":"Electron scattering anisotropy in silicon","authors":"G. Gaidar, P. Baranskii","doi":"10.30970/JPS.25.1602","DOIUrl":"https://doi.org/10.30970/JPS.25.1602","url":null,"abstract":"In n-Si single crystals, the scattering anisotropy of charge carriers has been studied depending on the compensation level of impurities. Theoretical calculations were carried out within the framework of the anisotropic scattering theory. The electrical conductivity, the Hall e(cid:27)ect, and the tensoresistance of silicon crystals with various di(cid:27)erence and summary concentrations of impurities were measured. It was established that an increase in the scattering anisotropy in n-Si crystals is practically independent of the degree of their compensation, but is associated only with an increase in the total concentration of ionized impurities. The intra-valley anisotropy of the scattering of charge carriers on dislocations as scatterers was studied for a (cid:28)xed location of the current with respect to the direction of their preferred orientation. Dislocations (having a distinguished orientation) were introduced into the n-Si crystal by the plastic bending deformation at 1073 K. It has been revealed that in n-Si crystals, the intra-valley anisotropy of the scattering on dislocations is much higher than the scattering anisotropy on the charged point defects. silicon, Hall e(cid:27)ect, tensoresistance, compensation degree, scattering anisotropy, dislocations.","PeriodicalId":43482,"journal":{"name":"Journal of Physical Studies","volume":"12 1","pages":""},"PeriodicalIF":0.5,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79220749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In the model of position-dependent e(cid:27)ective mass of an electron and isotropic dielectric continuum for con(cid:28)ned and interface phonons, the Hamiltonian of the electron-phonon system is obtained in the representation of the second quantization energy di(cid:27)erences are close to the energies of longitudinal phonons, and the state of the (cid:16)phonon ladder(cid:17) of extractors.
{"title":"Peculiarities of electron spectrum renormalized by optical phonons in the cascade of quantum cascade detector","authors":"J. Seti, E. Vereshko, М. Ткаch, О. Voitsekhivska","doi":"10.30970/jps.25.3706","DOIUrl":"https://doi.org/10.30970/jps.25.3706","url":null,"abstract":"In the model of position-dependent e(cid:27)ective mass of an electron and isotropic dielectric continuum for con(cid:28)ned and interface phonons, the Hamiltonian of the electron-phonon system is obtained in the representation of the second quantization energy di(cid:27)erences are close to the energies of longitudinal phonons, and the state of the (cid:16)phonon ladder(cid:17) of extractors.","PeriodicalId":43482,"journal":{"name":"Journal of Physical Studies","volume":"13 1","pages":""},"PeriodicalIF":0.5,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81730997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
, and be this can be if we use the huge reserves of 238 U . This article aims to investigate the feasibility of implementing one of the regimes of a fundamentally new and not yet practically implemented process in nuclear energy (cid:22) the nuclear traveling wave in a uranium-plutonium medium, where plutonium-239 is formed from 238 U . A nuclear traveling wave may form in a uranium-plutonium medium as a moving wave of plutonium-239 (cid:28)ssion. This paper considers the possibility of the formation of such a wave in a spherical uranium-plutonium medium, and the study is conducted in spherical geometry. improved explicit-implicit numerical calculation scheme was used, which allowed us to increase the temporal step of the simulation.
{"title":"Wave nuclear burning in spherical geometry","authors":"M. R. Shcherbyna, V. Tarasov, V. Smolyar","doi":"10.30970/JPS.25.2202","DOIUrl":"https://doi.org/10.30970/JPS.25.2202","url":null,"abstract":", and be this can be if we use the huge reserves of 238 U . This article aims to investigate the feasibility of implementing one of the regimes of a fundamentally new and not yet practically implemented process in nuclear energy (cid:22) the nuclear traveling wave in a uranium-plutonium medium, where plutonium-239 is formed from 238 U . A nuclear traveling wave may form in a uranium-plutonium medium as a moving wave of plutonium-239 (cid:28)ssion. This paper considers the possibility of the formation of such a wave in a spherical uranium-plutonium medium, and the study is conducted in spherical geometry. improved explicit-implicit numerical calculation scheme was used, which allowed us to increase the temporal step of the simulation.","PeriodicalId":43482,"journal":{"name":"Journal of Physical Studies","volume":"1 1","pages":""},"PeriodicalIF":0.5,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89572524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Dendebera, Y. Chornodolskyy, O. Antonyak, T. Malyi, V. Mykhaylyk, V. Vistovskyy, A. Voloshinovskii
{"title":"Luminescence of CsPbBr3 microcrystals embedded in the KBr matrix","authors":"M. Dendebera, Y. Chornodolskyy, O. Antonyak, T. Malyi, V. Mykhaylyk, V. Vistovskyy, A. Voloshinovskii","doi":"10.30970/jps.25.3703","DOIUrl":"https://doi.org/10.30970/jps.25.3703","url":null,"abstract":"","PeriodicalId":43482,"journal":{"name":"Journal of Physical Studies","volume":"19 1","pages":""},"PeriodicalIF":0.5,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87103167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. I. Slisenko, O. E. Zoteev, O. Vasylkevych, V. O. Zoteev, V. V. Krotenko
The paper studies structure and dynamics of the crystal lattice of solid solutions based on zirconium dioxide. Structural experiments were performed on a KSN-2 neutron spectrometer (in the (cid:16)di(cid:27)ractrometer(cid:17) mode) and DRON-3.0 X-ray di(cid:27)ractrometer. The phonon spectrum of solid solutions was obtained using the method of inelastic scattering of thermal neutrons. Dispersion ratios were obtained with KSN-2 (in a (cid:16)triple-axes-spectrometer(cid:17) mode) on monocrystal samples. It is known that the introduction of such ions as Ca, Y, Nd, Sc into the ZrO 2 crystal lattice stabilizes the cubic structure of the lattice. Particular attention was paid to the ZrO 2 system (cid:21) 33% mol. Y 2 O 3 . In this system, the possibility of formation of a pyrochlor structure was considered. It has been suggested that a phase transition occurs in ZrO 2 -based solid solutions under the in(cid:29)uence of neutron irradiation and temperature, which can lead to disruption of coatings made of these
{"title":"The dynamics of crystal lattice of solid solutions based on zirconium dioxide","authors":"V. I. Slisenko, O. E. Zoteev, O. Vasylkevych, V. O. Zoteev, V. V. Krotenko","doi":"10.30970/jps.25.4601","DOIUrl":"https://doi.org/10.30970/jps.25.4601","url":null,"abstract":"The paper studies structure and dynamics of the crystal lattice of solid solutions based on zirconium dioxide. Structural experiments were performed on a KSN-2 neutron spectrometer (in the (cid:16)di(cid:27)ractrometer(cid:17) mode) and DRON-3.0 X-ray di(cid:27)ractrometer. The phonon spectrum of solid solutions was obtained using the method of inelastic scattering of thermal neutrons. Dispersion ratios were obtained with KSN-2 (in a (cid:16)triple-axes-spectrometer(cid:17) mode) on monocrystal samples. It is known that the introduction of such ions as Ca, Y, Nd, Sc into the ZrO 2 crystal lattice stabilizes the cubic structure of the lattice. Particular attention was paid to the ZrO 2 system (cid:21) 33% mol. Y 2 O 3 . In this system, the possibility of formation of a pyrochlor structure was considered. It has been suggested that a phase transition occurs in ZrO 2 -based solid solutions under the in(cid:29)uence of neutron irradiation and temperature, which can lead to disruption of coatings made of these","PeriodicalId":43482,"journal":{"name":"Journal of Physical Studies","volume":"9 1","pages":""},"PeriodicalIF":0.5,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81366408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. Turko, A. Nikolenko, B. Sadovyi, L. Toporovska, M. Rudko, V. Kapustianyk, V. Strelchuk, R. Serkiz, Y. Kulyk
Light emitting diodes (LEDs) structures based on p -GaN (cid:28)lm/ n -ZnO nanorods quasiarray heterojunction were fabricated. ZnO nanostructures were grown on the p -type GaN templates using two di(cid:27)erent methods. The turn-on voltages of ZnO/GaN heterojunctions based on ZnO nanorods grown using the gas-transport reaction and hydrothermal methods were equal to 3.2 V and 6.5 V, respectively. The diode-ideality factors were estimated to be of around 45 and 36 for the samples with ZnO nanorods grown using the method of the gas-transport reaction and the hydrothermal method, respectively. The large values of the ideality factors can be explained by a high density of trap states and quality of the contacts with the p − n junctions. The electroluminescence (EL) spectra of LEDs with ZnO nanorods grown by the gas-transport reaction and hydrothermal methods were approximated by four and three Gaussians, respectively. On the basis of the X -ray di(cid:27)raction (XRD), electrical and optical studies data, one can conclude that the emission peaks at 389(cid:21)391, 410(cid:21)412, 436(cid:21)438 and 502 nm correspond to the near-band-edge (NBE) recombination in ZnO, interface carriers recombination in ZnO/GaN junction, the electrons transition from GaN conduction band to Mg 2+ doping level, and to the emission from the defect levels in ZnO, respectively. The LED based on ZnO nanorods synthesized using the hydrothermal method emitted a more pure ultraviolet (UV) light.
{"title":"Ultraviolet electroluminescence of LED devices based on n-ZnO nanorods grown by various methods and p-GaN films","authors":"B. Turko, A. Nikolenko, B. Sadovyi, L. Toporovska, M. Rudko, V. Kapustianyk, V. Strelchuk, R. Serkiz, Y. Kulyk","doi":"10.30970/JPS.25.1701","DOIUrl":"https://doi.org/10.30970/JPS.25.1701","url":null,"abstract":"Light emitting diodes (LEDs) structures based on p -GaN (cid:28)lm/ n -ZnO nanorods quasiarray heterojunction were fabricated. ZnO nanostructures were grown on the p -type GaN templates using two di(cid:27)erent methods. The turn-on voltages of ZnO/GaN heterojunctions based on ZnO nanorods grown using the gas-transport reaction and hydrothermal methods were equal to 3.2 V and 6.5 V, respectively. The diode-ideality factors were estimated to be of around 45 and 36 for the samples with ZnO nanorods grown using the method of the gas-transport reaction and the hydrothermal method, respectively. The large values of the ideality factors can be explained by a high density of trap states and quality of the contacts with the p − n junctions. The electroluminescence (EL) spectra of LEDs with ZnO nanorods grown by the gas-transport reaction and hydrothermal methods were approximated by four and three Gaussians, respectively. On the basis of the X -ray di(cid:27)raction (XRD), electrical and optical studies data, one can conclude that the emission peaks at 389(cid:21)391, 410(cid:21)412, 436(cid:21)438 and 502 nm correspond to the near-band-edge (NBE) recombination in ZnO, interface carriers recombination in ZnO/GaN junction, the electrons transition from GaN conduction band to Mg 2+ doping level, and to the emission from the defect levels in ZnO, respectively. The LED based on ZnO nanorods synthesized using the hydrothermal method emitted a more pure ultraviolet (UV) light.","PeriodicalId":43482,"journal":{"name":"Journal of Physical Studies","volume":"7 1","pages":""},"PeriodicalIF":0.5,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78714309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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