A series of new Donor-Acceptor-based compounds was designed and synthesized with triphenylamine as the electron-donating unit, and 2-phenylbenzothiazole functionalized with 4-nitrophenyl, 4-cyanophenyl, 4-formylphenyl, and 4-trifluoromethylphenyl as acceptors. The photophysical studies reveal efficient intramolecular charge transfer, and the electrochemical analysis indicated irreversible oxidation with relatively lower optical band gaps ranging from 3.09 to 3.15 eV, supporting the compound's potential for effective charge transport. Thin-film morphology studies showed uniform surface coverage and high crystallinity, suggesting well-ordered molecular packing conducive to enhanced charge transport. All synthesized compounds were integrated into memory device architectures, exhibiting non-volatile binary Write-Once-Read-Many (WORM) behavior. The devices demonstrated excellent performance, with data retention stability exceeding 103 s and an endurance capability of up to 100 programming cycles. Among the synthesized compounds, the compound containing the 4-formylphenyl group displayed the lowest switching threshold voltage and an ON/OFF current ratio of 103, while the nitro-substituted compound showed the highest ON/OFF ratio of 104, attributed to the strong electron-withdrawing nature of the nitro group. Computational studies supported the experimental findings, indicating that the memory-switching mechanism arises from a synergistic interaction of charge transfer and charge trapping processes.
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