Pub Date : 2010-07-19DOI: 10.1109/PHOSST.2010.5553709
M. Margala
Ballistic transport appears when the size of electronic devices is reduced below the electron mean free path. By using latest fabrication techniques and proper material system, the ballistic behavior can be achieved in nano-scale devices even at room temperature. In [1], Song has presented a ballistic rectifier which demonstrates the nonlinear transport at room temperature. However, the functionality of this device was constraint to rectification only. Using this well established theory, and to extend the functionality beyond rectification, our group proposed a novel device in which we added two in-plane strategically placed gates as shown in SEM image in Fig. 1. This led to formation of ballistic deflector transistor (BDT) [2]. In BDT, without biasing the lateral gates, we replicated the rectifying behavior shown in Fig. 2, certifying the presence of non-linear effect at room temperature. BDT is a unique planar device that possesses both a positive and a negative transconductance region and is capable of operating into the THz frequency regime at the room temperature. BDT is based upon an electron steering and a ballistic deflection effect. Modeling and experimental measurements have indicated that the transconductance of the device increases with applied drain-source voltage. The differential mode of operation provides two drain outputs, which depending on the gate bias, are either complementary or non-complementary. The latter facilitates a wide variety of circuit design techniques. The extremely low gate capacitance of the BDT planar structure contributes to THz performance. To investigate the gate control along the channel we fabricated only the channel of BDT where we removed left drain, right drain and deflector, and bias two gates in push-pull fashion as shown in Fig. 3(a). It can be noticed in Fig. 3(b) that drain current (ID) first increases as a function of gate voltage (VLG) then decreases. This behavior is due to the fact that the channel first is being pinched off, then as the VLG is increased, the channel opens and then eventually it pinches off again. As the channel width (WC) increases from 200 nm to 400 nm for a trench width (Wt) of 150 nm, the difference in the maximum to minimum current (ΔI) (Fig. 3(c)) is reduced from 20.15 μA to 15.26 μA, which indicates that early pinch off can be achieved with narrower channel. Increase in current with WC is attributed to the increase in carrier concentration. It is also observed that for WC=200 nm, the current rises exponentially as we narrow down the trenches. In this case, the field structure is modified at the heterostructure interface as a result of the ability to break thermionic barrier becomes easier and the gate current starts flowing into the channel. Another explanation can be given on the basis of fabrication because we applied same dose while etching Wt of 100, 150 and 200 nm, which made the wider trenches shallower resulting into higher leakages and low currents. The leakage
{"title":"Ballistic transport in nanostructures at room temperature","authors":"M. Margala","doi":"10.1109/PHOSST.2010.5553709","DOIUrl":"https://doi.org/10.1109/PHOSST.2010.5553709","url":null,"abstract":"Ballistic transport appears when the size of electronic devices is reduced below the electron mean free path. By using latest fabrication techniques and proper material system, the ballistic behavior can be achieved in nano-scale devices even at room temperature. In [1], Song has presented a ballistic rectifier which demonstrates the nonlinear transport at room temperature. However, the functionality of this device was constraint to rectification only. Using this well established theory, and to extend the functionality beyond rectification, our group proposed a novel device in which we added two in-plane strategically placed gates as shown in SEM image in Fig. 1. This led to formation of ballistic deflector transistor (BDT) [2]. In BDT, without biasing the lateral gates, we replicated the rectifying behavior shown in Fig. 2, certifying the presence of non-linear effect at room temperature. BDT is a unique planar device that possesses both a positive and a negative transconductance region and is capable of operating into the THz frequency regime at the room temperature. BDT is based upon an electron steering and a ballistic deflection effect. Modeling and experimental measurements have indicated that the transconductance of the device increases with applied drain-source voltage. The differential mode of operation provides two drain outputs, which depending on the gate bias, are either complementary or non-complementary. The latter facilitates a wide variety of circuit design techniques. The extremely low gate capacitance of the BDT planar structure contributes to THz performance. To investigate the gate control along the channel we fabricated only the channel of BDT where we removed left drain, right drain and deflector, and bias two gates in push-pull fashion as shown in Fig. 3(a). It can be noticed in Fig. 3(b) that drain current (ID) first increases as a function of gate voltage (VLG) then decreases. This behavior is due to the fact that the channel first is being pinched off, then as the VLG is increased, the channel opens and then eventually it pinches off again. As the channel width (WC) increases from 200 nm to 400 nm for a trench width (Wt) of 150 nm, the difference in the maximum to minimum current (ΔI) (Fig. 3(c)) is reduced from 20.15 μA to 15.26 μA, which indicates that early pinch off can be achieved with narrower channel. Increase in current with WC is attributed to the increase in carrier concentration. It is also observed that for WC=200 nm, the current rises exponentially as we narrow down the trenches. In this case, the field structure is modified at the heterostructure interface as a result of the ability to break thermionic barrier becomes easier and the gate current starts flowing into the channel. Another explanation can be given on the basis of fabrication because we applied same dose while etching Wt of 100, 150 and 200 nm, which made the wider trenches shallower resulting into higher leakages and low currents. The leakage ","PeriodicalId":440419,"journal":{"name":"IEEE Photonics Society Summer Topicals 2010","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129517099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-19DOI: 10.1109/PHOSST.2010.5553719
C. Xie
We show that in dispersion-managed systems with co-propagating 10-Gb/s OOK and coherent PDM-QPSK channels, it is the inter-channel XPM from the 10-Gb/s OOK channels that significantly degrades the performance of the coherent PDM-QPSK channels.
{"title":"Inter-channel nonlinearities in hybrid OOK and coherent PDM-QPSK transmission systems with dispersion management","authors":"C. Xie","doi":"10.1109/PHOSST.2010.5553719","DOIUrl":"https://doi.org/10.1109/PHOSST.2010.5553719","url":null,"abstract":"We show that in dispersion-managed systems with co-propagating 10-Gb/s OOK and coherent PDM-QPSK channels, it is the inter-channel XPM from the 10-Gb/s OOK channels that significantly degrades the performance of the coherent PDM-QPSK channels.","PeriodicalId":440419,"journal":{"name":"IEEE Photonics Society Summer Topicals 2010","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133185107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-19DOI: 10.1109/PHOSST.2010.5553714
Yi Cai
We investigate the performance of a maximum-a-posteriori-probability (MAP) detection scheme for linear and nonlinear inter-symbol interference compensation. We show that MAP detection can help to increase spectral efficiency and improve nonlinearity tolerance in long-haul transmissions.
{"title":"MAP detection for linear and nonlinear ISI mitigation in long-haul coherent detection systems","authors":"Yi Cai","doi":"10.1109/PHOSST.2010.5553714","DOIUrl":"https://doi.org/10.1109/PHOSST.2010.5553714","url":null,"abstract":"We investigate the performance of a maximum-a-posteriori-probability (MAP) detection scheme for linear and nonlinear inter-symbol interference compensation. We show that MAP detection can help to increase spectral efficiency and improve nonlinearity tolerance in long-haul transmissions.","PeriodicalId":440419,"journal":{"name":"IEEE Photonics Society Summer Topicals 2010","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132776286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-19DOI: 10.1109/PHOSST.2010.5553708
R. Sobolewski
We present sub-picosecond time-domain (THz bandwidth) characterization of novel ballistic transport electronic devices operated at room temperature, using a photoconductive switch for picosecond electrical pulse excitation and a femtosecond temporal resolution electro-optic sampling technique.
{"title":"Femtosecond time-domain experimental characterization of ballistic transport in semiconducting nanostructures","authors":"R. Sobolewski","doi":"10.1109/PHOSST.2010.5553708","DOIUrl":"https://doi.org/10.1109/PHOSST.2010.5553708","url":null,"abstract":"We present sub-picosecond time-domain (THz bandwidth) characterization of novel ballistic transport electronic devices operated at room temperature, using a photoconductive switch for picosecond electrical pulse excitation and a femtosecond temporal resolution electro-optic sampling technique.","PeriodicalId":440419,"journal":{"name":"IEEE Photonics Society Summer Topicals 2010","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114320639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-19DOI: 10.1109/PHOSST.2010.5553721
R. Dischler, F. Buchali, A. Klekamp
Different schemes for generation of OFDM superchannels beyond 100 Gb/s capacity are introduced and recent experimental results of the transmission of OFDM superchannels over field deployed fibers are reported.
{"title":"Experimental studies of polarization-multiplexed optical OFDM superchannel transport","authors":"R. Dischler, F. Buchali, A. Klekamp","doi":"10.1109/PHOSST.2010.5553721","DOIUrl":"https://doi.org/10.1109/PHOSST.2010.5553721","url":null,"abstract":"Different schemes for generation of OFDM superchannels beyond 100 Gb/s capacity are introduced and recent experimental results of the transmission of OFDM superchannels over field deployed fibers are reported.","PeriodicalId":440419,"journal":{"name":"IEEE Photonics Society Summer Topicals 2010","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114428196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-19DOI: 10.1109/PHOSST.2010.5553722
C. Menyuk
When there is no helicity, then the Onsager relations are inherited by the waveguide, and the birefringence must be linear. By contrast, fiber twisting can transform the intrinsic linear birefringence into an extrinsic birefringence that is elliptical.
{"title":"The Onsager relations and birefringence in optical fibers","authors":"C. Menyuk","doi":"10.1109/PHOSST.2010.5553722","DOIUrl":"https://doi.org/10.1109/PHOSST.2010.5553722","url":null,"abstract":"When there is no helicity, then the Onsager relations are inherited by the waveguide, and the birefringence must be linear. By contrast, fiber twisting can transform the intrinsic linear birefringence into an extrinsic birefringence that is elliptical.","PeriodicalId":440419,"journal":{"name":"IEEE Photonics Society Summer Topicals 2010","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132785161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-19DOI: 10.1109/PHOSST.2010.5553692
J. Cunningham, I. Shubin, Xuezhe Zheng, T. Pinguet, A. Mekis, A. Krishnamoorthy
We demonstrate spectral tunability for a microphotonic add-drop filter manufactured as ring resonator in commercial 130 nm SOI CMOS technology. The filters are provisioned with an integrated heater built in CMOS for thermal tuning. Their thermal impedance has been dramatically increased by the selective removal of the SOI handler substrate under the device footprint using silicon micromachining technology. An overall ∼20x increase in the tuning efficiency has been demonstrated with a 100 um radii ring that requires 3.9mW of the applied tuning power to shift the filter resonant peak across the entire free spectral range. Our result represents record tuning metrics for this class of device.
{"title":"Highly-efficient thermally-tuned resonant filters","authors":"J. Cunningham, I. Shubin, Xuezhe Zheng, T. Pinguet, A. Mekis, A. Krishnamoorthy","doi":"10.1109/PHOSST.2010.5553692","DOIUrl":"https://doi.org/10.1109/PHOSST.2010.5553692","url":null,"abstract":"We demonstrate spectral tunability for a microphotonic add-drop filter manufactured as ring resonator in commercial 130 nm SOI CMOS technology. The filters are provisioned with an integrated heater built in CMOS for thermal tuning. Their thermal impedance has been dramatically increased by the selective removal of the SOI handler substrate under the device footprint using silicon micromachining technology. An overall ∼20x increase in the tuning efficiency has been demonstrated with a 100 um radii ring that requires 3.9mW of the applied tuning power to shift the filter resonant peak across the entire free spectral range. Our result represents record tuning metrics for this class of device.","PeriodicalId":440419,"journal":{"name":"IEEE Photonics Society Summer Topicals 2010","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122311954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-19DOI: 10.1109/PHOSST.2010.5553634
B. Kibler, K. Hammani, C. Finot, A. Picozzi, G. Millot
We review our experimental and theoretical results showing the emergence of rogue events during light propagation in fiber-based nonlinear systems. Distinct statistical properties are underlined through parametric and Raman amplifications, supercontinuum generation and optical turbulence.
{"title":"Emergence of extreme events in fiber-based nonlinear devices","authors":"B. Kibler, K. Hammani, C. Finot, A. Picozzi, G. Millot","doi":"10.1109/PHOSST.2010.5553634","DOIUrl":"https://doi.org/10.1109/PHOSST.2010.5553634","url":null,"abstract":"We review our experimental and theoretical results showing the emergence of rogue events during light propagation in fiber-based nonlinear systems. Distinct statistical properties are underlined through parametric and Raman amplifications, supercontinuum generation and optical turbulence.","PeriodicalId":440419,"journal":{"name":"IEEE Photonics Society Summer Topicals 2010","volume":"182 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124746214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-19DOI: 10.1109/PHOSST.2010.5553675
J. Aizpurua, N. Large, Martina Abb, O. Muskens
The concept of ultrafast optical switches based on the nonlinear response of loaded plasmonic nanoantennas is proposed and explored. The plasmonic nanoswitch shows a transition from a capacitive to a conductive coupling regimes in the gap between two closely spaced metal nanorods. A photoconductive semiconductor in the gap is used to generate a free-carrier plasma which short circuits the antenna arms, resulting in a strong modification of the antenna resonance spectrum. A switching threshold several orders lower than state-of-the-art microphotonic switches is predicted by employing the strong confinement of light in the antenna gap at resonance. Antenna nanoswitches might be key devices with applications in integrated nanophotonic circuits or in quantum information devices.
{"title":"Plasmonic nanoantennas as building blocks for ultracompact photonic devices","authors":"J. Aizpurua, N. Large, Martina Abb, O. Muskens","doi":"10.1109/PHOSST.2010.5553675","DOIUrl":"https://doi.org/10.1109/PHOSST.2010.5553675","url":null,"abstract":"The concept of ultrafast optical switches based on the nonlinear response of loaded plasmonic nanoantennas is proposed and explored. The plasmonic nanoswitch shows a transition from a capacitive to a conductive coupling regimes in the gap between two closely spaced metal nanorods. A photoconductive semiconductor in the gap is used to generate a free-carrier plasma which short circuits the antenna arms, resulting in a strong modification of the antenna resonance spectrum. A switching threshold several orders lower than state-of-the-art microphotonic switches is predicted by employing the strong confinement of light in the antenna gap at resonance. Antenna nanoswitches might be key devices with applications in integrated nanophotonic circuits or in quantum information devices.","PeriodicalId":440419,"journal":{"name":"IEEE Photonics Society Summer Topicals 2010","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124772138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-19DOI: 10.1109/PHOSST.2010.5553716
A. Bononi, P. Serena, N. Rossi
The dominant nonlinear effects in single- and dual-polarization multichannel dispersion-managed optical transmissions are reviewed through an exhaustive simulation study of the nonlinear threshold with nonlinearity separation.
{"title":"Nonlinear limits in single- and dual-polarization transmission","authors":"A. Bononi, P. Serena, N. Rossi","doi":"10.1109/PHOSST.2010.5553716","DOIUrl":"https://doi.org/10.1109/PHOSST.2010.5553716","url":null,"abstract":"The dominant nonlinear effects in single- and dual-polarization multichannel dispersion-managed optical transmissions are reviewed through an exhaustive simulation study of the nonlinear threshold with nonlinearity separation.","PeriodicalId":440419,"journal":{"name":"IEEE Photonics Society Summer Topicals 2010","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123891723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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