Samadrita Das, T. Lenka, F. Talukdar, R. Velpula, H. Nguyen
In this paper, an electron blocking layer (EBL) free GaN/AlGaN light emitting diode (LED) is designed using Atlas TCAD with graded composition in the quantum barriers of the active region. The device has a GaN buffer layer incorporated in a c-plane for better carrier transportation and low efficiency droop. The proposed LED has quantum barriers with aluminium composition graded from 20% to ~2% per triangular, whereas the conventional has square barriers. The resulted structures exhibit significantly reduced electron leakage and improved hole injection into the active region, thus generating higher radiative recombination. The simulation outcomes exhibit the highest internal quantum efficiency (IQE) (48.4%) indicating a significant rise compared to the conventional LED. The designed EBL free LED with graded quantum barrier structure acquires substantially minimized efficiency droop of ~7.72% at 60 mA. Our study shows that the proposed structure has improved radiative recombination by ~136.7%, reduced electron leakage, and enhanced optical power by ~8.084% at 60 mA injected current as compared to conventional GaN/AlGaN EBL LED structure.
{"title":"Efficiency and radiative recombination rate enhancement in GaN/AlGaN multi-quantum well-based electron blocking layer free UV-LED for improved luminescence","authors":"Samadrita Das, T. Lenka, F. Talukdar, R. Velpula, H. Nguyen","doi":"10.2298/fuee2301091d","DOIUrl":"https://doi.org/10.2298/fuee2301091d","url":null,"abstract":"In this paper, an electron blocking layer (EBL) free GaN/AlGaN light emitting diode (LED) is designed using Atlas TCAD with graded composition in the quantum barriers of the active region. The device has a GaN buffer layer incorporated in a c-plane for better carrier transportation and low efficiency droop. The proposed LED has quantum barriers with aluminium composition graded from 20% to ~2% per triangular, whereas the conventional has square barriers. The resulted structures exhibit significantly reduced electron leakage and improved hole injection into the active region, thus generating higher radiative recombination. The simulation outcomes exhibit the highest internal quantum efficiency (IQE) (48.4%) indicating a significant rise compared to the conventional LED. The designed EBL free LED with graded quantum barrier structure acquires substantially minimized efficiency droop of ~7.72% at 60 mA. Our study shows that the proposed structure has improved radiative recombination by ~136.7%, reduced electron leakage, and enhanced optical power by ~8.084% at 60 mA injected current as compared to conventional GaN/AlGaN EBL LED structure.","PeriodicalId":44296,"journal":{"name":"Facta Universitatis-Series Electronics and Energetics","volume":"31 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90787993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Advancement in the semiconductor industry has transformed modern society. A miniaturization of a silicon transistor is continuing following Moore?s empirical law. The planar metal-oxide semiconductor field effect transistor (MOSFET) structure has reached its limit in terms of technological node reduction. To ensure the continuation of CMOS scaling and to overcome the Short Channel Effect (SCE) issues, a new MOS structure known as Fin field-effect transistor (FinFET) has been introduced and has led to significant performance enhancements. This paper presents a comparative study of CMOS gates designed with FinFET 10 nm, 7 nm and 5 nm technology nodes. Electrical parameters like the maximum switching current ION, the leakage current IOFF, and the performance ratio ION/IOFF for N and P FinFET with different nodes are presented in this simulation. The aim and the novelty of this paper is to extract the operating frequency for CMOS circuits using Quantum and Stress effects implemented in the Spice parameters on the latest Microwind software. The simulation results show a fitting with experimental data for FinFET N and P 10 nm strctures using quantum correction. Finally, we have demonstrate that FinFET 5 nm can reach a minimum time delay of td=1.4 ps for CMOS NOT gate and td=1 ps for CMOS NOR gate to improve Integrated Circuits IC.
{"title":"Performance analysis of FinFET based inverter, NAND and NOR circuits at 10 NM,7 NM and 5 NM node technologies","authors":"A. Lazzaz, K. Bousbahi, Mustapha Ghamnia","doi":"10.2298/fuee2301001l","DOIUrl":"https://doi.org/10.2298/fuee2301001l","url":null,"abstract":"Advancement in the semiconductor industry has transformed modern society. A miniaturization of a silicon transistor is continuing following Moore?s empirical law. The planar metal-oxide semiconductor field effect transistor (MOSFET) structure has reached its limit in terms of technological node reduction. To ensure the continuation of CMOS scaling and to overcome the Short Channel Effect (SCE) issues, a new MOS structure known as Fin field-effect transistor (FinFET) has been introduced and has led to significant performance enhancements. This paper presents a comparative study of CMOS gates designed with FinFET 10 nm, 7 nm and 5 nm technology nodes. Electrical parameters like the maximum switching current ION, the leakage current IOFF, and the performance ratio ION/IOFF for N and P FinFET with different nodes are presented in this simulation. The aim and the novelty of this paper is to extract the operating frequency for CMOS circuits using Quantum and Stress effects implemented in the Spice parameters on the latest Microwind software. The simulation results show a fitting with experimental data for FinFET N and P 10 nm strctures using quantum correction. Finally, we have demonstrate that FinFET 5 nm can reach a minimum time delay of td=1.4 ps for CMOS NOT gate and td=1 ps for CMOS NOR gate to improve Integrated Circuits IC.","PeriodicalId":44296,"journal":{"name":"Facta Universitatis-Series Electronics and Energetics","volume":"44 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81346533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this manuscript, a compact MIMO antenna for wireless application has been presented. The proposed antenna consists of the F-shaped radiator with the circular slot in the center and a rectangular ground plane on the other side of the substrate. The proposed antenna has the overall size of 48 ? 48 mm2. The antenna is designed to work on two frequency bands - from 1.5 to 2.3 GHz, and 3.7 to 4.2 GHz, having the resonating frequency of 1.8 GHz and 3.9 GHz respectively. The diversity performance of the antenna is also observed by using a variety of parameters like envelop correlation coefficient (ECC), Diversity Gain (DG), Total Active Reflection Coefficient (TARC), etc. The value of ECC is 0.02, which shows good diversity performance of the antenna. In order to validate the simulated and measured results, the proposed antenna has been fabricated and shows good agreement with the each other.
{"title":"Dual band MIMO antenna for LTE, 4G and sub-6 GHz 5G applications","authors":"Pinku Ranjan, Swati Yadav, A. Bage","doi":"10.2298/fuee2301043r","DOIUrl":"https://doi.org/10.2298/fuee2301043r","url":null,"abstract":"In this manuscript, a compact MIMO antenna for wireless application has been presented. The proposed antenna consists of the F-shaped radiator with the circular slot in the center and a rectangular ground plane on the other side of the substrate. The proposed antenna has the overall size of 48 ? 48 mm2. The antenna is designed to work on two frequency bands - from 1.5 to 2.3 GHz, and 3.7 to 4.2 GHz, having the resonating frequency of 1.8 GHz and 3.9 GHz respectively. The diversity performance of the antenna is also observed by using a variety of parameters like envelop correlation coefficient (ECC), Diversity Gain (DG), Total Active Reflection Coefficient (TARC), etc. The value of ECC is 0.02, which shows good diversity performance of the antenna. In order to validate the simulated and measured results, the proposed antenna has been fabricated and shows good agreement with the each other.","PeriodicalId":44296,"journal":{"name":"Facta Universitatis-Series Electronics and Energetics","volume":"132 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79654895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Machine learning assisted optimization (MLAO) has become very important for improving the antenna design process because it consumes much less time than the traditional methods. These models' accountability can be checked by the accuracy metrics, which tell about the correctness of the predicted result. Machine learning (ML) methods, such as Gaussian Process Regression, Artificial Neural Networks (ANNs), and Support Vector Machine (SVM), are used to simulate the antenna model to predict the reflection coefficient faster. This paper presents the optimization of Hybrid Dielectric Resonator Antenna (DRA) using machine learning models. Several regression models are applied to the dataset for optimization, and the best results are obtained using a random forest regression model with the accuracy of 97%. Additionally, the effectiveness of machine learning based antenna design is demonstrated through comparison with conventional design methods.
{"title":"Machine learning assisted optimization and its application to hybrid dielectric resonator antenna design","authors":"Pinku Ranjan, Harshit Gupta, Swati Yadav, Anand Sharma","doi":"10.2298/fuee2301031r","DOIUrl":"https://doi.org/10.2298/fuee2301031r","url":null,"abstract":"Machine learning assisted optimization (MLAO) has become very important for improving the antenna design process because it consumes much less time than the traditional methods. These models' accountability can be checked by the accuracy metrics, which tell about the correctness of the predicted result. Machine learning (ML) methods, such as Gaussian Process Regression, Artificial Neural Networks (ANNs), and Support Vector Machine (SVM), are used to simulate the antenna model to predict the reflection coefficient faster. This paper presents the optimization of Hybrid Dielectric Resonator Antenna (DRA) using machine learning models. Several regression models are applied to the dataset for optimization, and the best results are obtained using a random forest regression model with the accuracy of 97%. Additionally, the effectiveness of machine learning based antenna design is demonstrated through comparison with conventional design methods.","PeriodicalId":44296,"journal":{"name":"Facta Universitatis-Series Electronics and Energetics","volume":"27 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73507283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper presents the design and implementation of a discrete-time controller for a DC-DC Buck converter in the complex delta domain. Whenever any continuous-time system is sampled to get a corresponding discrete-time system with a very high sampling rate, the shift operator parameterized discrete-time system fails to provide meaningful information. There is another discrete-time operator called delta operator. In the delta operator parameterized discrete-time system, the discrete-time results and continuous-time results can be obtained hand to hand, rather than in two special cases at a very high sampling rate. The superior property of the delta operator is capitalized in this paper to design the proposed controller in the discrete domain. The Proportional plus Integral (PI) controller designed in the delta domain is used to maintain the output voltage of the Buck converter at the load end for varying load and varying supply voltage conditions. The controller is designed and implemented using the DS1202 dSPACE board. The output voltage of the Buck converter is scaled to feed to the onboard analogue to digital converter of DS1202. Under the different disturbances, the error between the desired output voltage and the actual output voltage is measured and the delta PI controller is used to manipulate the duty cycle of the converter. The duty cycle of this pulse width modulation (PWM) signal is generated using a DS1202 board and is applied to the gate of the Metal Oxide Semiconductor field-effect transistor (MOSFET) via a suitable driver such that the output voltage of the Buck converter remains at its desired value.
{"title":"Design and implementation of digital controller in delta domain for buck converter","authors":"Arka Biswas, A. Mondal, P. Sarkar","doi":"10.2298/fuee2301103b","DOIUrl":"https://doi.org/10.2298/fuee2301103b","url":null,"abstract":"This paper presents the design and implementation of a discrete-time controller for a DC-DC Buck converter in the complex delta domain. Whenever any continuous-time system is sampled to get a corresponding discrete-time system with a very high sampling rate, the shift operator parameterized discrete-time system fails to provide meaningful information. There is another discrete-time operator called delta operator. In the delta operator parameterized discrete-time system, the discrete-time results and continuous-time results can be obtained hand to hand, rather than in two special cases at a very high sampling rate. The superior property of the delta operator is capitalized in this paper to design the proposed controller in the discrete domain. The Proportional plus Integral (PI) controller designed in the delta domain is used to maintain the output voltage of the Buck converter at the load end for varying load and varying supply voltage conditions. The controller is designed and implemented using the DS1202 dSPACE board. The output voltage of the Buck converter is scaled to feed to the onboard analogue to digital converter of DS1202. Under the different disturbances, the error between the desired output voltage and the actual output voltage is measured and the delta PI controller is used to manipulate the duty cycle of the converter. The duty cycle of this pulse width modulation (PWM) signal is generated using a DS1202 board and is applied to the gate of the Metal Oxide Semiconductor field-effect transistor (MOSFET) via a suitable driver such that the output voltage of the Buck converter remains at its desired value.","PeriodicalId":44296,"journal":{"name":"Facta Universitatis-Series Electronics and Energetics","volume":"10 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88803897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Frequency analysis of the impulse waveshapes of generators which are commonly used for testing of the equipment in high-voltage engineering is presented in this paper. Some of the typical impulse waveshapes, such as 1.2/50 ?s/?s, 10/350 ?s/?s, 10/700 ?s/?s, 10/1000 ?s/?s, and 250/2500 ?s/?s, are approximated by the Double-exponential function (DEXP) and by the terms of Multi-peaked analytically extended function (MP-AEF). Experimental set ups for impulse signal generation are based on the desired outputs as given in the IEC 60060-1 Standard. Dumped oscillations are characteristic of the standardized 8/20 ?s/?s waveshape. The positive part of the normalized Sinc function with dumped oscillations is also approximated by MP-AEF terms. The corresponding frequency spectra of these aperiodic signals are obtained analytically by using Piecewise Fourier transform (PWFT). This paper presents the procedure to obtain Fourier transforms of the functions with multiple and sharp peaks typical for the impulse current and voltage test generators? waveshapes.
本文对高压工程中常用的设备测试用发电机的脉冲波形进行了频率分析。一些典型的脉冲波形，如1.2/50 ?s/?S, 10/350 ?S, 10/700 ?10/1000 ? S /?S和250/2500 ? S /?s，由双指数函数(DEXP)和多峰解析扩展函数(MP-AEF)项逼近。脉冲信号产生的实验设置是基于IEC 60060-1标准中给出的期望输出。倾倒振荡是标准化的8/20 ?s/?波形。具有转储振荡的归一化Sinc函数的正部分也由MP-AEF项近似。利用分段傅立叶变换(PWFT)分析得到了这些非周期信号的频谱。本文介绍了获得脉冲电流和电压试验发电机典型的多尖峰函数的傅里叶变换的方法。波形。
{"title":"Frequency analysis of the typical impulse voltage and current waveshapes of test generators","authors":"V. Javor","doi":"10.2298/fuee2301077j","DOIUrl":"https://doi.org/10.2298/fuee2301077j","url":null,"abstract":"Frequency analysis of the impulse waveshapes of generators which are commonly used for testing of the equipment in high-voltage engineering is presented in this paper. Some of the typical impulse waveshapes, such as 1.2/50 ?s/?s, 10/350 ?s/?s, 10/700 ?s/?s, 10/1000 ?s/?s, and 250/2500 ?s/?s, are approximated by the Double-exponential function (DEXP) and by the terms of Multi-peaked analytically extended function (MP-AEF). Experimental set ups for impulse signal generation are based on the desired outputs as given in the IEC 60060-1 Standard. Dumped oscillations are characteristic of the standardized 8/20 ?s/?s waveshape. The positive part of the normalized Sinc function with dumped oscillations is also approximated by MP-AEF terms. The corresponding frequency spectra of these aperiodic signals are obtained analytically by using Piecewise Fourier transform (PWFT). This paper presents the procedure to obtain Fourier transforms of the functions with multiple and sharp peaks typical for the impulse current and voltage test generators? waveshapes.","PeriodicalId":44296,"journal":{"name":"Facta Universitatis-Series Electronics and Energetics","volume":"19 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91145266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Rama Basupalli, N. Darimireddy, Rajasekhar Nalanagula, Sujatha Mandala
This paper proposes the effect of different dielectric constants to construct a microstrip patch antenna deployed on Jean's textile covering military wireless applications. Initially, the structure is designed with double L-shaped slits inserted on both sides of the patch with an FR4 dielectric constant of 4.4. Antenna dimensions are 40 ? 25 mm2, which is miniature compared to the wave's length (?) at the desired operating frequency. The proposed antenna performance in terms of simulated parameters such as gain in dBi, reflection loss (S11), directivity, and patch antenna radiation efficiency are executed by the CST MW EM simulator. However, the conventional way of this design with FR4 may not be so reliable when it is designed on Jean's substrate. Besides all the above parameters extracted from the simulator should hold a low value to implement a high-performance deployed wearable antenna. The paper's outcome shows the importance of simulations and measurements undertaken for the proposed antenna assuming both the dielectric constants of FR4 and Jeans cloth material (with ?r of 1.7). The main contribution of the antenna is to resonate at the frequencies of 3.17 GHz with circular polarization and 5.04 GHz with linear polarization. The antenna prototype is described, and its performance is validated using measurements. The proposed structure also provides a better enhancement in terms of 10-dB impedance bandwidth, with an average gain of 5 dBi.
{"title":"Performance of wearable circularly polarized antenna on different high frequency substrates for dual-band wireless applications","authors":"Rama Basupalli, N. Darimireddy, Rajasekhar Nalanagula, Sujatha Mandala","doi":"10.2298/fuee2301121b","DOIUrl":"https://doi.org/10.2298/fuee2301121b","url":null,"abstract":"This paper proposes the effect of different dielectric constants to construct a microstrip patch antenna deployed on Jean's textile covering military wireless applications. Initially, the structure is designed with double L-shaped slits inserted on both sides of the patch with an FR4 dielectric constant of 4.4. Antenna dimensions are 40 ? 25 mm2, which is miniature compared to the wave's length (?) at the desired operating frequency. The proposed antenna performance in terms of simulated parameters such as gain in dBi, reflection loss (S11), directivity, and patch antenna radiation efficiency are executed by the CST MW EM simulator. However, the conventional way of this design with FR4 may not be so reliable when it is designed on Jean's substrate. Besides all the above parameters extracted from the simulator should hold a low value to implement a high-performance deployed wearable antenna. The paper's outcome shows the importance of simulations and measurements undertaken for the proposed antenna assuming both the dielectric constants of FR4 and Jeans cloth material (with ?r of 1.7). The main contribution of the antenna is to resonate at the frequencies of 3.17 GHz with circular polarization and 5.04 GHz with linear polarization. The antenna prototype is described, and its performance is validated using measurements. The proposed structure also provides a better enhancement in terms of 10-dB impedance bandwidth, with an average gain of 5 dBi.","PeriodicalId":44296,"journal":{"name":"Facta Universitatis-Series Electronics and Energetics","volume":"48 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76007939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this study an improved Ali Baba and the forty thieves Optimizer (IAFT) is proposed and successfully adapted and applied to enhance the technical performances of radial distribution network (RDN). The standard AFT governed by two sensible parameters to balance the exploration and the exploitation stages. In the proposed variant a modification is introduced using sine and cosine functions to create flexible balance between Intensification and diversification during search process. The proposed variant namely IAFT applied to solve various single and combined objective functions such as the improvement of total power losses (TPL), the minimization of total voltage deviation and the maximization of the loading capacity (LC) under fixed load and considering the random aspect of loads. The exchange of active powers is elaborated by integration of multi distribution generation based photovoltaic systems (PV), otherwise the optimal management of reactive power is achieved by the installation of multi DSTATCOM. The efficiency and robustness of the proposed variant validated on two RDN, the 33-Bus and the 69-Bus. The qualities of objective functions achieved and the statistical analysis elaborated compared to results achieved using several recent metaheuristic methods demonstrate the competitive aspect of the proposed IAFT in solving with accuracy various practical problems related to optimal power management of RDN.
{"title":"Optimal power management of DGS and DSTATCOM using improved Ali Baba and the forty thieves optimizer","authors":"B. Mahdad","doi":"10.2298/fuee2301053m","DOIUrl":"https://doi.org/10.2298/fuee2301053m","url":null,"abstract":"In this study an improved Ali Baba and the forty thieves Optimizer (IAFT) is proposed and successfully adapted and applied to enhance the technical performances of radial distribution network (RDN). The standard AFT governed by two sensible parameters to balance the exploration and the exploitation stages. In the proposed variant a modification is introduced using sine and cosine functions to create flexible balance between Intensification and diversification during search process. The proposed variant namely IAFT applied to solve various single and combined objective functions such as the improvement of total power losses (TPL), the minimization of total voltage deviation and the maximization of the loading capacity (LC) under fixed load and considering the random aspect of loads. The exchange of active powers is elaborated by integration of multi distribution generation based photovoltaic systems (PV), otherwise the optimal management of reactive power is achieved by the installation of multi DSTATCOM. The efficiency and robustness of the proposed variant validated on two RDN, the 33-Bus and the 69-Bus. The qualities of objective functions achieved and the statistical analysis elaborated compared to results achieved using several recent metaheuristic methods demonstrate the competitive aspect of the proposed IAFT in solving with accuracy various practical problems related to optimal power management of RDN.","PeriodicalId":44296,"journal":{"name":"Facta Universitatis-Series Electronics and Energetics","volume":"25 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87395196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper investigates the impact of finite number of unit cells on the sensing performance of chosen THz metamaterial absorber. Sensor models with different number of unit cells varying from 16 to infinite have been created using WIPL-D software. The results of comparison show that as the sensor?s size increases, its absorption response becomes more similar to the one of an infinite sensor structure. Metamaterial absorber with 50 unit cells expresses the similar behavior in terms of the corresponding frequency and amplitude shifts as the infinite absorber when the H9N2 virus sample of variable thickness is uniformly deposited on the top of the sensors? surface. The uneven distribution of sample affects the sensor?s absorption response which has been proven on the example of sensor with 50 unit cells.
{"title":"The impact of finite dimensions on the sensing performance of terahertz metamaterial absorber","authors":"Anja Kovacevic, M. Potrebić, D. Tosic","doi":"10.2298/fuee2301017k","DOIUrl":"https://doi.org/10.2298/fuee2301017k","url":null,"abstract":"This paper investigates the impact of finite number of unit cells on the sensing performance of chosen THz metamaterial absorber. Sensor models with different number of unit cells varying from 16 to infinite have been created using WIPL-D software. The results of comparison show that as the sensor?s size increases, its absorption response becomes more similar to the one of an infinite sensor structure. Metamaterial absorber with 50 unit cells expresses the similar behavior in terms of the corresponding frequency and amplitude shifts as the infinite absorber when the H9N2 virus sample of variable thickness is uniformly deposited on the top of the sensors? surface. The uneven distribution of sample affects the sensor?s absorption response which has been proven on the example of sensor with 50 unit cells.","PeriodicalId":44296,"journal":{"name":"Facta Universitatis-Series Electronics and Energetics","volume":"85 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86513339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Petronijević, C. Milosavljevic, B. Veselić, S. Huseinbegović, B. Perunicic
Application of a discrete time (DT) sliding mode controller (SMC) in the control structure of the primary controller of a three-phase LCL grid inverter is presented. The design of the inverter side current control loop is performed using a DT linear model of the grid inverter with LCL filter at output terminals. The DT quasi-sliding mode control was used due to its robustness to external and parametric disturbances. Additionally, in order to improve disturbance compensation, a disturbance compensator is also implemented. Also, a specific anti-windup mechanism has been implemented in the structure of the controller to prevent large overshoots in the inverter response in case of random disturbances of grid voltages, or sudden changes in the commanded power. The control of the grid inverter is realized in the reference system synchronized with the voltage of the power grid. The development of the digitally realized control subsystem is presented in detail, starting from theoretical considerations, through computer simulations to experimental tests. The experimental results confirm good static and dynamic performance.
{"title":"Discrete time quasi-sliding mode-based control of LCL grid inverters","authors":"M. Petronijević, C. Milosavljevic, B. Veselić, S. Huseinbegović, B. Perunicic","doi":"10.2298/fuee2301133p","DOIUrl":"https://doi.org/10.2298/fuee2301133p","url":null,"abstract":"Application of a discrete time (DT) sliding mode controller (SMC) in the control structure of the primary controller of a three-phase LCL grid inverter is presented. The design of the inverter side current control loop is performed using a DT linear model of the grid inverter with LCL filter at output terminals. The DT quasi-sliding mode control was used due to its robustness to external and parametric disturbances. Additionally, in order to improve disturbance compensation, a disturbance compensator is also implemented. Also, a specific anti-windup mechanism has been implemented in the structure of the controller to prevent large overshoots in the inverter response in case of random disturbances of grid voltages, or sudden changes in the commanded power. The control of the grid inverter is realized in the reference system synchronized with the voltage of the power grid. The development of the digitally realized control subsystem is presented in detail, starting from theoretical considerations, through computer simulations to experimental tests. The experimental results confirm good static and dynamic performance.","PeriodicalId":44296,"journal":{"name":"Facta Universitatis-Series Electronics and Energetics","volume":"46 1","pages":""},"PeriodicalIF":0.6,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80655279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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