Gate drivers for high-voltage silicon carbide (SiC) converters require a reliable power supply with strong isolation and compact size. However, existing gate driver power supplies (GDPS) with the transformer structure make it difficult to enhance the isolation performance while keeping the small coupling capacitance and volume. This paper firstly presents a novel wireless GDPS with an improved Class-E inverter for high-voltage energy harvesting applications. The proposed design requires only one switch and reduces the input inductor significantly. Meanwhile, it solves the issue of harmful surge currents and maintains a zero-voltage-switching state when the load changes. Finally, a compact wireless GDPS prototype is developed and the insulation characteristics are studied. Results demonstrate that the proposed design achieves isolation voltage up to 17.7 kV with the smallest size volume and extra-low coupling capacitance of 1.83 pF.
{"title":"High-Isolation and Compact Wireless Power Supply for Gate Drivers of SiC Devices With Improved Class-E Inverter","authors":"Jianyu Pan, Sheng Yan, Haibo Tang, Xiaojie Fu, Yihui Zhao, Junwei Xiao, Hao Feng, Manlin Yang","doi":"10.1049/hve2.70030","DOIUrl":"https://doi.org/10.1049/hve2.70030","url":null,"abstract":"<p>Gate drivers for high-voltage silicon carbide (SiC) converters require a reliable power supply with strong isolation and compact size. However, existing gate driver power supplies (GDPS) with the transformer structure make it difficult to enhance the isolation performance while keeping the small coupling capacitance and volume. This paper firstly presents a novel wireless GDPS with an improved Class-E inverter for high-voltage energy harvesting applications. The proposed design requires only one switch and reduces the input inductor significantly. Meanwhile, it solves the issue of harmful surge currents and maintains a zero-voltage-switching state when the load changes. Finally, a compact wireless GDPS prototype is developed and the insulation characteristics are studied. Results demonstrate that the proposed design achieves isolation voltage up to 17.7 kV with the smallest size volume and extra-low coupling capacitance of 1.83 pF.</p>","PeriodicalId":48649,"journal":{"name":"High Voltage","volume":"10 5","pages":"1282-1292"},"PeriodicalIF":4.9,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/hve2.70030","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145371808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Weichuan Zhao, Gijs Willem Lagerweij, Mohamad Ghaffarian Niasar
As power-electronic (PE)-based systems become increasingly common in the electric power grid, the insulation systems used in medium- and high-voltage (HV) applications will be exposed to high-frequency (HF) electric fields. Therefore, the insulation materials must be characterised using HF waveforms. However, generating these waveforms presents a significant challenge due to the large reactive power associated with the d