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Interface superconductivity in the point contact between topological semimetals polymorphic PtBi2 and ferromagnetic tips 拓扑半金属多晶铂硼与铁磁尖端点接触的界面超导性
Pub Date : 2024-09-11 DOI: 10.1007/s44214-024-00065-1
Xuetao Di, Haoran Ji, Wenshuai Gao, Mingliang Tian, He Wang, Jian Wang

Topological semimetals, possessing topologically non-trivial band structures, serve as excellent platforms for realizing topological superconductivity through hard point-contact experiments. In this study, we successfully induce superconductivity in the three-dimensional Dirac semimetal, cubic PtBi2, using ferromagnetic and paramagnetic tips in hard point contact experiments. The induced superconductivity is proven to be insensitive to ferromagnetism and exhibits unconventional features in the point-contact spectra. The highest superconducting transition temperature ((T_{mathrm{c}})) reaches approximately 5.1 K, and the (T_{mathrm{c}}) values are proven to have a positive correlation with the coupling between the tip and the sample. Furthermore, we extend our point-contact experiments to trigonal PtBi2, a material possessing a type-I Weyl semimetal band structure and triply degenerate points proximate to the Fermi level. Utilizing both ferromagnetic Ni tips and paramagnetic Ag tips, we successfully enhance superconductivity with a (T_{mathrm{c}}) of up to 3.0 K in this material. The findings from point-contact measurements reveal that the enhanced superconductivity is compatible with ferromagnetism and the magnetism of the tip can affect the symmetry of the enhanced superconducting state. Given that the lattice structure remains stable under pressure up to 51.2 GPa for cubic PtBi2 and 12.9 GPa for trigonal PtBi2, the emergent superconducting states observed in these two PtBi2 materials could inherit their topological nontrivial nature and be promising candidates for topological superconductor.

拓扑半金属具有拓扑非三维带状结构,是通过硬点接触实验实现拓扑超导的绝佳平台。在本研究中,我们在硬点接触实验中使用铁磁和顺磁尖端,成功地在三维狄拉克半金属立方铂硼中诱导出超导电性。事实证明,诱导超导性对铁磁性不敏感,并在点接触光谱中表现出非常规特征。最高超导转变温度(T_{mathrm{c}})约为 5.1 K,并且证明了 T_{mathrm{c}} 值与尖端和样品之间的耦合呈正相关。此外,我们还将点接触实验扩展到了三棱铋2,这是一种具有 I 型韦尔半金属带结构和接近费米级的三重退化点的材料。利用铁磁性的镍尖端和顺磁性的银尖端,我们成功地增强了这种材料的超导性,其(T_{mathrm{c}})高达 3.0 K。点接触测量结果表明,增强的超导性与铁磁性是兼容的,针尖的磁性会影响增强超导态的对称性。鉴于立方态铂(PtBi2)和三方态铂(PtBi2)的晶格结构在高达 51.2 GPa 和 12.9 GPa 的压力下保持稳定,在这两种铂(PtBi2)材料中观察到的新兴超导态可能继承了它们的拓扑非难性质,有望成为拓扑超导体的候选材料。
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引用次数: 0
Superconductivity and topological quantum states in two-dimensional moiré superlattices 二维摩尔超晶格中的超导性和拓扑量子态
Pub Date : 2024-08-27 DOI: 10.1007/s44214-024-00063-3
Chuanqi Zheng, Xiaoxue Liu

Moiré superlattices have emerged as an excellent platform for investigating a plethora of exotic quantum states in condensed matter physics. Recent advancements have unveiled abundant discoveries in two-dimensional moiré superlattices. In this paper, we will present a review of the recent progresses in superconductivity and topological physics within graphene and transition metal dichalcogenides-based moiré superlattices. Additionally, we outline future potential challenges and desirable efforts for discovering, understanding, and controlling these novel states in two-dimensional moiré superlattices.

摩尔纹超晶格已成为研究凝聚态物理学中大量奇异量子态的绝佳平台。最近的研究进展揭示了二维莫埃里超晶格的丰富发现。在本文中,我们将回顾石墨烯和过渡金属二卤化物摩尔超晶格在超导和拓扑物理方面的最新进展。此外,我们还将概述未来在发现、理解和控制二维莫尔雷超晶格中这些新状态方面的潜在挑战和理想努力。
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引用次数: 0
Molecular beam epitaxy growth of topological insulator Bi4Br4 on silicon for the infrared applications 分子束外延在硅上生长拓扑绝缘体 Bi4Br4,用于红外应用
Pub Date : 2024-08-22 DOI: 10.1007/s44214-024-00062-4
Shiqi Xu, Xiangkai Meng, Xu Zhang, Chunpan Zhang, Jiangyue Bai, Yujiu Jiang, Xiuxia Li, Chong Wang, Pengcheng Mao, Junfeng Han, Yugui Yao

Bi4Br4 is a material rich in intriguing topological properties. Monolayer Bi4Br4 film exhibits helical edge states characteristic of a quantum spin Hall insulator, while bulk Bi4Br4 represents a higher-order topological insulator with hinge states. However, direct exfoliation from single crystal can only obtain thin nanowires due to the weak van der Waals forces between Bi4Br4 chains, which limits its optical analysis and application, while the growth of Bi4Br4 thin films is also full of challenges due to the extremely narrow growth temperature range and the accurate control of the BiBr3 flux. Here, we reported the controlled growth of α-Bi4Br4 thin films on intrinsic silicon substrates using molecular beam epitaxy. The growth temperature, BiBr3 flux, and the flux ratio of Bi and BiBr3 were accurately controlled. Then, the morphology, composition, and bonding of the prepared films were investigated using atomic force microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. The growth of large, uniform thin films provides an ideal material platform for studying the physical properties of Bi4Br4. Additionally, we utilized Fourier-transform infrared spectroscopy to explore the film’s infrared characteristics, revealing strong absorption in the low frequency range due to the high proportion of one-dimensional topological edge states and laying the groundwork for further exploration of its potential applications in the optoelectronic field.

Bi4Br4 是一种富含奇妙拓扑特性的材料。单层 Bi4Br4 薄膜呈现出量子自旋霍尔绝缘体所特有的螺旋边缘态,而块状 Bi4Br4 则是具有铰链态的高阶拓扑绝缘体。然而,由于 Bi4Br4 链之间的范德华力很弱,从单晶直接剥离只能获得很细的纳米线,这限制了其光学分析和应用,而 Bi4Br4 薄膜的生长也因生长温度范围极窄和 BiBr3 通量的精确控制而充满挑战。在此,我们报告了利用分子束外延技术在本征硅衬底上可控生长 α-Bi4Br4 薄膜的情况。生长温度、BiBr3 通量以及 Bi 和 BiBr3 的通量比都得到了精确控制。然后,使用原子力显微镜、X 射线光电子能谱和拉曼光谱研究了所制备薄膜的形貌、成分和键合。大面积均匀薄膜的生长为研究 Bi4Br4 的物理性质提供了理想的材料平台。此外,我们还利用傅立叶变换红外光谱法探究了薄膜的红外特性,发现由于一维拓扑边缘态比例较高,薄膜在低频范围内具有较强的吸收性,为进一步探索其在光电领域的潜在应用奠定了基础。
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引用次数: 0
Structural design and molecular beam epitaxy growth of GaAs and InAs heterostructures for high mobility two-dimensional electron gas 用于高迁移率二维电子气的砷化镓和砷化铟异质结构的结构设计和分子束外延生长
Pub Date : 2024-07-26 DOI: 10.1007/s44214-024-00061-5
Tiantian Wang, Huading Song, Ke He

This review aims to provide a comprehensive overview of the development and current understanding of GaAs and InAs heterostructures, with a special emphasis on achieving high material quality and high-mobility two-dimensional electron gases (2DEGs). The review discusses the evolution of structural designs that have significantly contributed to the enhancement of electron mobility, highlighting the critical considerations of scattering mechanisms of the 2DEGs. In addition, this review examines the substantial contributions of Molecular Beam Epitaxy (MBE) to these developments, particularly through advancements in vacuum technology, source material purification, and precision control of growth conditions. The intent of this review is to serve as a useful reference for researchers and practitioners in the field, offering insights into the historical progression and technical details of these semiconductor systems.

本综述旨在全面概述砷化镓和砷化铟异质结构的发展和当前认识,特别强调实现高材料质量和高迁移率的二维电子气(2DEG)。综述讨论了对提高电子迁移率有重大贡献的结构设计的演变,强调了对二维电子气散射机制的关键考虑。此外,本综述还探讨了分子束外延(MBE)对这些发展的重大贡献,特别是通过真空技术、源材料纯化和生长条件精确控制等方面的进步。本综述旨在为该领域的研究人员和从业人员提供有用的参考资料,让他们深入了解这些半导体系统的历史进程和技术细节。
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引用次数: 0
Dynamical chiral Nernst effect in twisted Van der Waals few layers 扭曲范德华几层中的动态手性内斯特效应
Pub Date : 2024-06-07 DOI: 10.1007/s44214-024-00059-z
Juncheng Li, Dawei Zhai, Cong Xiao, Wang Yao

The Nernst effect is a fundamental thermoelectric conversion phenomenon that was deemed to be possible only in systems with magnetic field or magnetization. In this work, we propose a novel dynamical chiral Nernst effect that can appear in two-dimensional van der Waals materials with chiral structural symmetry in the absence of any magnetic degree of freedom. This unconventional effect is triggered by time variation of an out-of-plane electric field, and has an intrinsic quantum geometric origin linked to not only the intralayer center-of-mass motion but also the interlayer coherence of electronic states. We demonstrate the effect in twisted homobilayer and homotrilayer transition metal dichalcogenides, where the strong twisted interlayer coupling leads to sizable intrinsic Nernst conductivities well within the experimental capacity. This work suggests a new route for electric control of thermoelectric conversion.

奈恩斯特效应是一种基本的热电转换现象,过去被认为只有在具有磁场或磁化的系统中才有可能发生。在这项工作中,我们提出了一种新的动态手性恩斯特效应,这种效应可以出现在具有手性结构对称性的二维范德华材料中,而且不存在任何磁自由度。这种非常规效应由平面外电场的时间变化触发,其内在的量子几何起源不仅与层内质量中心运动有关,还与电子态的层间相干性有关。我们在扭曲的同双层和同三层过渡金属二钙化物中演示了这一效应,其中强扭曲层间耦合导致了相当大的本征内能斯特电导率,远在实验容量范围之内。这项工作为热电转换的电气控制提供了一条新途径。
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引用次数: 0
Is spontaneous vortex generation in superconducting 4Hb-TaS2 from vison-vortex nucleation with $mathbb{Z}_{2}$ topological order? 超导 4Hb-TaS2 中的自发涡旋生成是否来自具有 $mathbb{Z}_{2}$ 拓扑秩序的可见涡核?
Pub Date : 2024-05-10 DOI: 10.1007/s44214-024-00057-1
Rui Leonard Luo, Gang V. Chen

We propose the superconducting van der Waals material 4Hb-TaS2 to realize the (mathbb{Z}_{2}) topological order and interpret the recent discovery of the spontaneous vortex generation in 4Hb-TaS2 as the vison-vortex nucleation. For the alternating stacking of metallic/superconducting and Mott insulating layers in 4Hb-TaS2, we expect the local moments in the Mott insulating 1T-TaS2 layer to form the (mathbb{Z}_{2}) topological order. The spontaneous vortex generation in 4Hb-TaS2 is interpreted from the transition or nucleation between the superconducting vortex and the (mathbb{Z}_{2}) vison in different phase regimes. Differing from the single vison-vortex nucleation in the original Senthil–Fisher’s cuprate proposal, we consider such nucleation process between the superconducting vortex lattice and the vison crystal. We further propose experiments to distinguish this proposal with the (mathbb{Z}_{2}) topological order from the chiral spin liquid scenarios.

我们提出用超导范德华材料4Hb-TaS2来实现(mathbb{Z}_{2})拓扑秩序,并将最近在4Hb-TaS2中发现的自发涡旋生成解释为可见涡核。对于4Hb-TaS2中金属/超导层和莫特绝缘层的交替堆积,我们预计莫特绝缘的1T-TaS2层中的局部力矩会形成(mathbb{Z}_{2})拓扑秩序。4Hb-TaS2中自发涡旋的产生可以解释为超导涡旋和(mathbb{Z}_{2})视子在不同相态下的过渡或成核。有别于森蒂尔-费舍尔杯石方案中的单一粘子-漩涡成核,我们考虑的是超导漩涡晶格与粘子晶体之间的成核过程。我们进一步提出了一些实验来区分这个具有(mathbb{Z}_{2})拓扑阶的方案与手性自旋液体方案。
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引用次数: 0
Numerical investigations of the extensive entanglement Hamiltonian in quantum spin ladders 量子自旋梯中广泛纠缠哈密顿的数值研究
Pub Date : 2024-05-06 DOI: 10.1007/s44214-024-00056-2
Chengshu Li, Xingyu Li, Yi-Neng Zhou

Entanglement constitutes one of the key concepts in quantum mechanics and serves as an indispensable tool in the understanding of quantum many-body systems. In this work, we perform extensive numerical investigations of extensive entanglement properties of coupled quantum spin chains. This setup has proven useful for e.g. extending the Lieb–Schultz–Mattis theorem to open systems, and contrasts the majority of previous research where the entanglement cut has one lower dimension than the system. We focus on the cases where the entanglement Hamiltonian is either gapless or exhibits spontaneous symmetry breaking behavior. We further employ conformal field theoretical formulae to identify the universal behavior in the former case. The results in our work can serve as a paradigmatic starting point for more systematic exploration of the largely uncharted physics of extensive entanglement, both analytical and numerical.

纠缠是量子力学的关键概念之一,也是理解量子多体系统不可或缺的工具。在这项工作中,我们对耦合量子自旋链的广泛纠缠特性进行了广泛的数值研究。事实证明,这种设置对于将李布-舒尔茨-马蒂斯定理扩展到开放系统等方面非常有用,而且与以往大多数研究形成鲜明对比的是,纠缠切分的维度比系统低一个维度。我们重点研究了纠缠哈密顿无间隙或表现出自发对称破缺行为的情况。我们进一步运用共形场论公式来确定前一种情况下的普遍行为。我们的研究成果可以作为一个范例性的起点,为更系统地探索广泛纠缠的未知物理学提供分析和数值支持。
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引用次数: 0
Equivariant neural network force fields for magnetic materials 磁性材料的等变神经网络力场
Pub Date : 2024-04-22 DOI: 10.1007/s44214-024-00055-3
Zilong Yuan, Zhiming Xu, He Li, Xinle Cheng, Honggeng Tao, Zechen Tang, Zhiyuan Zhou, Wenhui Duan, Yong Xu

Neural network force fields have significantly advanced ab initio atomistic simulations across diverse fields. However, their application in the realm of magnetic materials is still in its early stage due to challenges posed by the subtle magnetic energy landscape and the difficulty of obtaining training data. Here we introduce a data-efficient neural network architecture to represent density functional theory total energy, atomic forces, and magnetic forces as functions of atomic and magnetic structures. Our approach incorporates the principle of equivariance under the three-dimensional Euclidean group into the neural network model. Through systematic experiments on various systems, including monolayer magnets, curved nanotube magnets, and moiré-twisted bilayer magnets of CrI3, we showcase the method’s high efficiency and accuracy, as well as exceptional generalization ability. The work creates opportunities for exploring magnetic phenomena in large-scale materials systems.

神经网络力场极大地推动了各个领域的原子模拟。然而,由于微妙的磁能格局和难以获得训练数据所带来的挑战,它们在磁性材料领域的应用仍处于早期阶段。在这里,我们引入了一种数据高效的神经网络架构,将密度泛函理论总能量、原子力和磁力表示为原子和磁性结构的函数。我们的方法将三维欧几里得群下的等差数列原理纳入了神经网络模型。通过对单层磁体、弯曲纳米管磁体和摩尔纹扭曲的双层 CrI3 磁体等各种系统的系统实验,我们展示了该方法的高效性和准确性,以及卓越的泛化能力。这项工作为探索大规模材料系统中的磁现象创造了机会。
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引用次数: 0
Universal hypothesis of autocorrelation function from Krylov complexity 从克雷洛夫复杂性看自相关函数的普遍假设
Pub Date : 2024-04-11 DOI: 10.1007/s44214-024-00054-4
Ren Zhang, Hui Zhai

In a quantum many-body system, autocorrelation functions can determine linear responses nearby equilibrium and quantum dynamics far from equilibrium. In this letter, we bring out the connection between the operator complexity and the autocorrelation function. In particular, we focus on a particular kind of operator complexity called the Krylov complexity. We find that a set of Lanczos coefficients ({b_{n}}) computed for determining the Krylov complexity can reveal the universal behaviors of autocorrelations, which are otherwise impossible. When the time axis is scaled by (b_{1}), different autocorrelation functions obey a universal function form at short time. We further propose a characteristic parameter deduced from ({b_{n}}) that can largely determine the behavior of autocorrelations at the intermediate time. This parameter can also largely determine whether the autocorrelation function oscillates or monotonically decays in time. We present numerical evidences and physical intuitions to support these universal hypotheses of autocorrelations. We emphasize that these universal behaviors are held across different operators and different physical systems.

在量子多体系统中,自相关函数可以决定平衡附近的线性响应和远离平衡的量子动力学。在这封信中,我们提出了算子复杂性与自相关函数之间的联系。我们尤其关注一种特殊的算子复杂性,即克雷洛夫复杂性。我们发现,为确定克雷洛夫复杂度而计算的一组 Lanczos 系数 ({b_{n}})可以揭示自相关函数的普遍行为,而这在其他情况下是不可能的。当时间轴被 (b_{1})缩放时,不同的自相关函数在短时间内服从一个通用的函数形式。我们进一步提出了一个由 ({b_{n}})推导出的特征参数,它可以在很大程度上决定自相关函数在中间时间的行为。这个参数还能在很大程度上决定自相关函数在时间上是振荡还是单调衰减。我们提出了数字证据和物理直觉来支持自相关性的这些普遍假设。我们强调,这些普遍行为适用于不同的算子和不同的物理系统。
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引用次数: 0
Superconducting tunnel junctions with layered superconductors 带层状超导体的超导隧道结
Pub Date : 2024-03-08 DOI: 10.1007/s44214-024-00053-5

Abstract

The superconducting tunneling effect in heterostructures, describing the process where single electrons or Cooper pairs tunnel through the barrier, can always play a significant role in understanding the phase coherence and pairing mechanisms in superconductors. Taking advantage of the easy cleavage to atomically-thin monolayer structure of layered superconductors and resulting quantum confinement of electrons or Cooper pairs at two-dimensional limit, van der Waals superconducting materials hosting superconducting order in monolayers or heterostructures can exhibit extensive emergent phenomena associated with quantum phase transitions of vortex and anti-vortex pairs. Examples of superconducting tunnel junctions (STJs) based on layered superconductors have been demonstrated to achieve novel phenomena, including Andreev bound states, Majorana bound states and 0/π-phase junctions. Since the characteristic parameters of quasiparticle tunneling through the barrier are directly associated with the energy gap values of superconductors, such critical parameter can be obtained within the STJ device geometry, which helps us understand and control the pairing states and emerging phenomena in superconductors. In this review, from the perspective of STJs with single electron tunneling and Cooper pair tunneling, we discuss Andreev reflection, Majorana bound states, photon-induced tunneling effects, non-reciprocal transport and superconducting diode phenomena, as well as prospects for layered-superconductor-based STJs.

摘要 异质结构中的超导隧穿效应描述了单个电子或库珀对隧穿势垒的过程,对于理解超导体中的相干性和配对机制始终起着重要作用。利用层状超导体原子级薄单层结构易于裂解以及电子或库珀对在二维极限产生量子约束的优势,在单层或异质结构中承载超导秩序的范德华超导材料可以表现出与涡旋和反涡旋对的量子相变相关的大量新兴现象。基于层状超导体的超导隧道结(STJ)已被证明可以实现新现象,包括安德烈耶夫束缚态、马约拉纳束缚态和 0/π 相结。由于准粒子隧穿势垒的特征参数与超导体的能隙值直接相关,因此可以在 STJ 器件的几何结构中获得这种临界参数,这有助于我们理解和控制超导体中的配对态和新现象。在这篇综述中,我们从具有单电子隧穿和库珀对隧穿的 STJ 的角度,讨论了安德列夫反射、马约拉纳束缚态、光子诱导的隧穿效应、非互惠输运和超导二极管现象,以及基于层状超导体的 STJ 的前景。
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引用次数: 0
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