Pub Date : 2024-06-07DOI: 10.1088/1674-1056/ad553a
Kaixuan Li, Cheng Ning, Ye Dong, Chuang Xue
For investigating efficiently the stagnation kinetic-process of Z-pinch, we develop a novel modified electrostatic implicit particle-in-cell (PIC) algorithm in radial one-dimension for Z-pinch simulation in which a small-angle cumulative binary collision algorithm is used. In our algorithm, the electric field in z-direction is solved by a parallel electrode-plate model, the azimuthal magnetic field is obtained by Ampere's law, and the term for charged particle gyromotion is approximated by the cross product of the averaged velocity and magnetic field. In simulation results of 2 MA deuterium plasma shell Z-pinch, the mass center implosion trajectory agree generally with that obtained by one dimensional MHD simulation, and the plasma current also closely aligns with the external current. The phase space diagrams and radial velocity probability distributions of ions and electrons are obtained. The main kinetic characteristic of electron motion is thermal equilibrium and oscillation, which should be oscillated around the ions, while that of ion motion is implosion inwards. In the region of stagnation radius, the radial velocity probability distributions of ions transit from the non-equilibrium to equilibrium state with the current increasing, while electron’s is basically the equilibrium state. When the initial ion density and current peak aren’t high enough, the ions may not reach their thermal equilibrium state through collisions even in its stagnation phase.
{"title":"Exploring the Microscopic Physical Processes of Z-pinch by a Modified Electrostatic Direct Implicit Particle-in-Cell Algorithm","authors":"Kaixuan Li, Cheng Ning, Ye Dong, Chuang Xue","doi":"10.1088/1674-1056/ad553a","DOIUrl":"https://doi.org/10.1088/1674-1056/ad553a","url":null,"abstract":"\u0000 For investigating efficiently the stagnation kinetic-process of Z-pinch, we develop a novel modified electrostatic implicit particle-in-cell (PIC) algorithm in radial one-dimension for Z-pinch simulation in which a small-angle cumulative binary collision algorithm is used. In our algorithm, the electric field in z-direction is solved by a parallel electrode-plate model, the azimuthal magnetic field is obtained by Ampere's law, and the term for charged particle gyromotion is approximated by the cross product of the averaged velocity and magnetic field. In simulation results of 2 MA deuterium plasma shell Z-pinch, the mass center implosion trajectory agree generally with that obtained by one dimensional MHD simulation, and the plasma current also closely aligns with the external current. The phase space diagrams and radial velocity probability distributions of ions and electrons are obtained. The main kinetic characteristic of electron motion is thermal equilibrium and oscillation, which should be oscillated around the ions, while that of ion motion is implosion inwards. In the region of stagnation radius, the radial velocity probability distributions of ions transit from the non-equilibrium to equilibrium state with the current increasing, while electron’s is basically the equilibrium state. When the initial ion density and current peak aren’t high enough, the ions may not reach their thermal equilibrium state through collisions even in its stagnation phase.","PeriodicalId":504421,"journal":{"name":"Chinese Physics B","volume":" 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141373216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-07DOI: 10.1088/1674-1056/ad5535
Yao-Wen Li, Zhuang Liu, Hai-Chen Wu, Fang Wang, Chao-Qun Zhu, Dong-Liang Tan, Yu Liu, Yang Yang, Ming-Xiao Zhang, Ren-Jie Chen, Aru Yan
The unique cellular microstructure of Fe-rich Sm2Co17-type permanent magnets is closely associated with the structure of the solid solution precursor. In this article, the phase structure, magnetic properties, and mechanical behavior of B-doped Sm2Co17-type magnets with high Fe content are investigated. The doped B atoms can diffuse into the interstitial vacancy, resulting in lattice expansion and promote the homogenization of the phase organizational structure during the solid solution treatment in theory. However, the resulting second phase plays a dominant role, resulting in more microtwin structures and highly ordered 2:17R phases in the solid solution stage, which inhibits the ordering transformation of 1:7H phase during aging and affects the generation of the cellular structure, and resulting in a decrease in magnetic properties, yet the interface formed between it and the matrix phase hinders the movement of dislocations and enhances the mechanical properties. Hence, the precipitation of high flexural strain grain boundary phase induced by B element doping is also a new and effective way to improve the flexural strain of Sm2Co17-type magnets. Our study provides a new understanding of the phase structure evolution and its effect on the magnetic and mechanical properties of Sm2Co17-type magnets with high Fe content.
富铁 Sm2Co17 型永磁体独特的蜂窝状微观结构与固溶体前驱体的结构密切相关。本文研究了高铁含量的掺 B Sm2Co17 型磁体的相结构、磁性能和力学行为。在理论上，掺杂的 B 原子可以扩散到间隙空位中，导致晶格膨胀，并在固溶处理过程中促进相组织结构的均匀化。但由此产生的第二相起主导作用，在固溶阶段形成更多的微丝结构和高度有序的 2:17R 相，在老化过程中抑制了 1:7H 相的有序转变，影响了蜂窝结构的生成，导致磁性能下降，但它与基体相之间形成的界面阻碍了位错的移动，增强了力学性能。因此，B 元素掺杂诱导的高弯曲应变晶界相的析出也是改善 Sm2Co17 型磁体弯曲应变的一种新的有效方法。我们的研究为相结构演化及其对高铁元素含量的 Sm2Co17 型磁体的磁性和力学性能的影响提供了新的认识。
{"title":"Phase structure evolution and its effect on magnetic and mechanical properties of B-doped Sm2Co17-type magnets with high Fe content","authors":"Yao-Wen Li, Zhuang Liu, Hai-Chen Wu, Fang Wang, Chao-Qun Zhu, Dong-Liang Tan, Yu Liu, Yang Yang, Ming-Xiao Zhang, Ren-Jie Chen, Aru Yan","doi":"10.1088/1674-1056/ad5535","DOIUrl":"https://doi.org/10.1088/1674-1056/ad5535","url":null,"abstract":"\u0000 The unique cellular microstructure of Fe-rich Sm2Co17-type permanent magnets is closely associated with the structure of the solid solution precursor. In this article, the phase structure, magnetic properties, and mechanical behavior of B-doped Sm2Co17-type magnets with high Fe content are investigated. The doped B atoms can diffuse into the interstitial vacancy, resulting in lattice expansion and promote the homogenization of the phase organizational structure during the solid solution treatment in theory. However, the resulting second phase plays a dominant role, resulting in more microtwin structures and highly ordered 2:17R phases in the solid solution stage, which inhibits the ordering transformation of 1:7H phase during aging and affects the generation of the cellular structure, and resulting in a decrease in magnetic properties, yet the interface formed between it and the matrix phase hinders the movement of dislocations and enhances the mechanical properties. Hence, the precipitation of high flexural strain grain boundary phase induced by B element doping is also a new and effective way to improve the flexural strain of Sm2Co17-type magnets. Our study provides a new understanding of the phase structure evolution and its effect on the magnetic and mechanical properties of Sm2Co17-type magnets with high Fe content.","PeriodicalId":504421,"journal":{"name":"Chinese Physics B","volume":" 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141374556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-07DOI: 10.1088/1674-1056/ad5537
Dashuai Xu, Lei Liu, Jianhui Yuan, Bo Zhou, Chuang-Hui Dong, Fengxi Wang, Yong Ding, Ying-Li Sun, A. Yan
This study investigated the effect of antioxidants on the grinding efficiency, magnetic powder characteristics, microstructure, and magnetic properties of 2:17 type SmCo permanent magnet materials. The results show that adding antioxidants helps improve the dispersion among magnetic powders, leading to a 33.3 % decrease in jet milling time and a 15.8 % increase in magnet powder production yield. Additionally, adding antioxidants enhances the oxidation resistance of the magnetic powders. After being stored in a constant temperature air environment at 25 ℃ for 48 h, the O content in the powder decreased by 33 % compared to samples without antioxidants. While in the magnet body, the O content decreased from 0.21 wt.% to 0.14 wt.%, which helps increase the effective Sm content and domain wall pinning uniformity in the magnet. Excellent magnetic properties were obtained in the magnet with added antioxidants: B r = 11.6 kGs, SF = 79.6 %, H cj = 16.8 kOe, and (BH) max = 32.5 MGOe.
本研究调查了抗氧化剂对 2:17 型钐钴永磁材料的研磨效率、磁粉特性、微观结构和磁性能的影响。结果表明，添加抗氧化剂有助于改善磁粉之间的分散性，从而使喷射研磨时间缩短 33.3%，磁粉产量提高 15.8%。此外，添加抗氧化剂还能增强磁粉的抗氧化性。在 25 ℃ 的恒温空气环境中存放 48 小时后，磁粉中的 O 含量比未添加抗氧化剂的样品减少了 33%。而在磁体中，O 的含量从 0.21 wt.% 降至 0.14 wt.%，这有助于提高磁体中的有效 Sm 含量和域壁钉扎均匀性。添加了抗氧化剂的磁体具有优异的磁性能：B r = 11.6 kGs、SF = 79.6 %、H cj = 16.8 kOe 和 (BH) max = 32.5 MGOe。
{"title":"Effect of antioxidant on the efficiency of jet milling and the powder characteristics of Sm2Co17 permanent magnets","authors":"Dashuai Xu, Lei Liu, Jianhui Yuan, Bo Zhou, Chuang-Hui Dong, Fengxi Wang, Yong Ding, Ying-Li Sun, A. Yan","doi":"10.1088/1674-1056/ad5537","DOIUrl":"https://doi.org/10.1088/1674-1056/ad5537","url":null,"abstract":"\u0000 This study investigated the effect of antioxidants on the grinding efficiency, magnetic powder characteristics, microstructure, and magnetic properties of 2:17 type SmCo permanent magnet materials. The results show that adding antioxidants helps improve the dispersion among magnetic powders, leading to a 33.3 % decrease in jet milling time and a 15.8 % increase in magnet powder production yield. Additionally, adding antioxidants enhances the oxidation resistance of the magnetic powders. After being stored in a constant temperature air environment at 25 ℃ for 48 h, the O content in the powder decreased by 33 % compared to samples without antioxidants. While in the magnet body, the O content decreased from 0.21 wt.% to 0.14 wt.%, which helps increase the effective Sm content and domain wall pinning uniformity in the magnet. Excellent magnetic properties were obtained in the magnet with added antioxidants: B\u0000 \u0000 r\u0000 = 11.6 kGs, SF = 79.6 %, H\u0000 \u0000 cj\u0000 = 16.8 kOe, and (BH)\u0000 max\u0000 = 32.5 MGOe.","PeriodicalId":504421,"journal":{"name":"Chinese Physics B","volume":" 27","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141371012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-07DOI: 10.1088/1674-1056/ad5539
Yu Zeng, Guolin Liu, Jinhao Liu, Zheng Wei
The AFM probe in tapping mode is a continuous process of energy dissipation, from moving away from to intermittent contact with the sample surfaces. At present, studies regarding the energy dissipation mechanism of this continuous process have only been reported sporadically, and there are no systematic explanations or experimental verifications of the energy dissipation mechanism in each stage of the continuous process. The quality factors can be used to characterize the energy dissipation in TM-AFM systems. In this study, the vibration model of the microcantilever beam was established, coupling the vibration and damping effects of the microcantilever beam. The quality factor of the vibrating microcantilever beam under damping was derived, and the air viscous damping when the probe is away from the sample and the air squeeze film damping when the probe is close to the sample were calculated. In addition, the mechanism of the damping effects of different shapes of probes at different tip-sample distances was analyzed. The accuracy of the theoretical simplified model was verified using both experimental and simulation methods. A clearer understanding of the kinetic characteristics and damping mechanism of the TM-AFM was achieved by examining the air damping dissipation mechanism of AFM probes in the tapping mode, which was very important for improving both the quality factor and the imaging quality of the TM-AFM system. This study’s research findings also provided theoretical references and experimental methods for the future study of the energy dissipation mechanism of micro-nanoelectromechanical systems.
{"title":"The Effects of Air Damping on the Quality Factors of Different Probes in Tapping Mode Atomic Force Microscopy","authors":"Yu Zeng, Guolin Liu, Jinhao Liu, Zheng Wei","doi":"10.1088/1674-1056/ad5539","DOIUrl":"https://doi.org/10.1088/1674-1056/ad5539","url":null,"abstract":"\u0000 The AFM probe in tapping mode is a continuous process of energy dissipation, from moving away from to intermittent contact with the sample surfaces. At present, studies regarding the energy dissipation mechanism of this continuous process have only been reported sporadically, and there are no systematic explanations or experimental verifications of the energy dissipation mechanism in each stage of the continuous process. The quality factors can be used to characterize the energy dissipation in TM-AFM systems. In this study, the vibration model of the microcantilever beam was established, coupling the vibration and damping effects of the microcantilever beam. The quality factor of the vibrating microcantilever beam under damping was derived, and the air viscous damping when the probe is away from the sample and the air squeeze film damping when the probe is close to the sample were calculated. In addition, the mechanism of the damping effects of different shapes of probes at different tip-sample distances was analyzed. The accuracy of the theoretical simplified model was verified using both experimental and simulation methods. A clearer understanding of the kinetic characteristics and damping mechanism of the TM-AFM was achieved by examining the air damping dissipation mechanism of AFM probes in the tapping mode, which was very important for improving both the quality factor and the imaging quality of the TM-AFM system. This study’s research findings also provided theoretical references and experimental methods for the future study of the energy dissipation mechanism of micro-nanoelectromechanical systems.","PeriodicalId":504421,"journal":{"name":"Chinese Physics B","volume":" 25","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141373819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-07DOI: 10.1088/1674-1056/ad5538
Lei Fu, a, Shasha Li, Xiangyan Bo, Sai Ma, Feng Li, Yong Pu
2D Janus monolayers are promising in spintronic device application due to their enhanced magnetic couplings and Curie temperatures. Van der Waals CrCl3 monolayer has been experimentally proved to have an in-plane magnetic easy axis and a low Curie temperature of 17 K, which will limit its application in spintronic devices. In this work, we propose a new Janus monolayer Cr2Cl3S3 based on the first principles calculations. The phonon dispersion and elastic constants confirm that Janus monolayer Cr2Cl3S3 is dynamically and mechanically stable. Our Monte Carlo simulation results based on magnetic exchange constants reveal that Janus monolayer Cr2Cl3S3 is an intrinsic ferromagnetic semiconductor with TC of 180 K, which is much higher than that of CrCl3 due to the enhanced ferromagnetic coupling caused by S substitution. Moreover, the magnetic easy axis of Janus Cr2Cl3S3 can be tuned to the perpendicular direction with a large magnetic anisotropy energy (MAE) of 142 μeV/Cr. Furthermore, the effect of biaxial strain on the magnetic property of Janus monolayer Cr2Cl3S3 is evaluated. It is found that the Curie temperature is more robust under tensile strain. This work indicates that the Janus monolayer Cr2Cl3S3 presents increased Curie temperature and out-of-plane magnetic easy axis, suggesting greater application potential in 2D spintronic devices.
{"title":"Two-dimensional Cr2Cl3S3 Janus Magnetic Semiconductor with large magnetic exchange interaction and high-T\u0000 \u0000 C\u0000","authors":"Lei Fu, a, Shasha Li, Xiangyan Bo, Sai Ma, Feng Li, Yong Pu","doi":"10.1088/1674-1056/ad5538","DOIUrl":"https://doi.org/10.1088/1674-1056/ad5538","url":null,"abstract":"\u0000 2D Janus monolayers are promising in spintronic device application due to their enhanced magnetic couplings and Curie temperatures. Van der Waals CrCl3 monolayer has been experimentally proved to have an in-plane magnetic easy axis and a low Curie temperature of 17 K, which will limit its application in spintronic devices. In this work, we propose a new Janus monolayer Cr2Cl3S3 based on the first principles calculations. The phonon dispersion and elastic constants confirm that Janus monolayer Cr2Cl3S3 is dynamically and mechanically stable. Our Monte Carlo simulation results based on magnetic exchange constants reveal that Janus monolayer Cr2Cl3S3 is an intrinsic ferromagnetic semiconductor with TC of 180 K, which is much higher than that of CrCl3 due to the enhanced ferromagnetic coupling caused by S substitution. Moreover, the magnetic easy axis of Janus Cr2Cl3S3 can be tuned to the perpendicular direction with a large magnetic anisotropy energy (MAE) of 142 μeV/Cr. Furthermore, the effect of biaxial strain on the magnetic property of Janus monolayer Cr2Cl3S3 is evaluated. It is found that the Curie temperature is more robust under tensile strain. This work indicates that the Janus monolayer Cr2Cl3S3 presents increased Curie temperature and out-of-plane magnetic easy axis, suggesting greater application potential in 2D spintronic devices.","PeriodicalId":504421,"journal":{"name":"Chinese Physics B","volume":" 75","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141374969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-07DOI: 10.1088/1674-1056/ad5536
Jing Zhang, Yuanzhi Cui, Xiaoyu Wang, Chuang Wang, Mengchen Liu, Jie Xu, Kai Li, Yunhe Zhao, Zhenyan Lu, L. Pan, Chendong Jin, Qingfang Liu, Jianbo Wang, D. Cao
The evolution process of magnetic domains in response to external fields is crucial for the modern understanding and application of spintronics. In this study, we investigated the domain rotation in stripe domain films of varying thicknesses by examining their response to microwave excitation in four different orientations. The resonance spectra indicate that the rotation field of stripe domain film under an applied magnetic field approaches the field where the resonance mode of sample changes. The saturation field of the stripe domain film corresponds to the field where the resonance mode disappears when measured in the stripe direction parallel to the microwave magnetic field. The results are reproducible and consistent with micromagnetic simulations, providing additional approaches and techniques for comprehending the microscopic mechanisms of magnetic domains and characterizing their rotation.
{"title":"Mapping the antiparallel aligned domain rotation by microwave excitation","authors":"Jing Zhang, Yuanzhi Cui, Xiaoyu Wang, Chuang Wang, Mengchen Liu, Jie Xu, Kai Li, Yunhe Zhao, Zhenyan Lu, L. Pan, Chendong Jin, Qingfang Liu, Jianbo Wang, D. Cao","doi":"10.1088/1674-1056/ad5536","DOIUrl":"https://doi.org/10.1088/1674-1056/ad5536","url":null,"abstract":"\u0000 The evolution process of magnetic domains in response to external fields is crucial for the modern understanding and application of spintronics. In this study, we investigated the domain rotation in stripe domain films of varying thicknesses by examining their response to microwave excitation in four different orientations. The resonance spectra indicate that the rotation field of stripe domain film under an applied magnetic field approaches the field where the resonance mode of sample changes. The saturation field of the stripe domain film corresponds to the field where the resonance mode disappears when measured in the stripe direction parallel to the microwave magnetic field. The results are reproducible and consistent with micromagnetic simulations, providing additional approaches and techniques for comprehending the microscopic mechanisms of magnetic domains and characterizing their rotation.","PeriodicalId":504421,"journal":{"name":"Chinese Physics B","volume":" 42","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141374265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-07DOI: 10.1088/1674-1056/ad553b
Huangyu Wu, Jinjin Liu, Yongkai Li, Peng Zhu, Liu Yang, Fuhong Chen, Deng Hu, Zhiwei Wang
Kagome magnets were predicted to be a good platform to investigate correlated topology band structure, Chern quantum phase, and geometrical frustration since their unique lattice geometry. Here we reported single crystal growth of 166-type Kagome magnetic materials, including HfMn6Sn6, ZrMn6Sn6, GdMn6Sn6 and GdV6Sn6, by using flux method with Sn as a flux. Among them, HfMn6Sn6 and ZrMn6Sn6 single crystals were grown for the first time. X-ray diffraction measurements reveal that all four samples crystallized in HfFe6Ge6-type hexagonal structure with space group of P6/mmm. All samples show metallic behavior from temperature dependence of resistivity measurements, and the dominate carrier is hole, except for GdV6Sn6 which is electron dominated. All samples have magnetic order with different transition temperature, HfMn6Sn6, ZrMn6Sn6 and GdV6Sn6 are antiferromagnetic with the T N of 541 K, 466 K and 4 K respectively, while GdMn6Sn6 is ferrimagnetic with the critical temperature about 470 K. This study will enrich the research platform of magnetic Kagome materials and help explore the novel quantum phenomenon in these interesting materials.
{"title":"Single crystal growth and characterization of 166-type magnetic Kagome metals","authors":"Huangyu Wu, Jinjin Liu, Yongkai Li, Peng Zhu, Liu Yang, Fuhong Chen, Deng Hu, Zhiwei Wang","doi":"10.1088/1674-1056/ad553b","DOIUrl":"https://doi.org/10.1088/1674-1056/ad553b","url":null,"abstract":"\u0000 Kagome magnets were predicted to be a good platform to investigate correlated topology band structure, Chern quantum phase, and geometrical frustration since their unique lattice geometry. Here we reported single crystal growth of 166-type Kagome magnetic materials, including HfMn6Sn6, ZrMn6Sn6, GdMn6Sn6 and GdV6Sn6, by using flux method with Sn as a flux. Among them, HfMn6Sn6 and ZrMn6Sn6 single crystals were grown for the first time. X-ray diffraction measurements reveal that all four samples crystallized in HfFe6Ge6-type hexagonal structure with space group of P6/mmm. All samples show metallic behavior from temperature dependence of resistivity measurements, and the dominate carrier is hole, except for GdV6Sn6 which is electron dominated. All samples have magnetic order with different transition temperature, HfMn6Sn6, ZrMn6Sn6 and GdV6Sn6 are antiferromagnetic with the T\u0000 N of 541 K, 466 K and 4 K respectively, while GdMn6Sn6 is ferrimagnetic with the critical temperature about 470 K. This study will enrich the research platform of magnetic Kagome materials and help explore the novel quantum phenomenon in these interesting materials.","PeriodicalId":504421,"journal":{"name":"Chinese Physics B","volume":" 37","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141372497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-07DOI: 10.1088/1674-1056/ad553d
Zhaocong Huang, Xuejian Tang, Qian Chen, Wei Jiang, Qingjie Guo, M. Jalali, Jun Du, Ya Zhai
The spin pumping effect in magnetic heterostructures and multilayers is a highly effective method for the generation and transmission of spin currents. In the increasingly prominent synthetic antiferromagnetic structures, the two ferromagnetic layers demonstrate in-phase and out-of-phase states, corresponding to acoustic and optical precession modes. Within this context, our study explores the spin pumping effect in Py/Ru/Py synthetic antiferromagnetic structures across different modes. The heightened magnetic damping resulting from the spin pumping effect in the in-phase state initially decreases with increasing Py thickness before stabilizing. Conversely, in the out-of-phase state, the amplified damping exceeds that of the in-phase state, suggesting a greater spin relaxation within this configuration, which demonstrates sensitivity to alterations in static exchange interactions. These findings contribute to advancing the application of synthetic antiferromagnetic structures in magnonic devices.
{"title":"In-phase and out-of-phase spin pumping effects in Py/Ru/Py synthetic antiferromagnetic structures","authors":"Zhaocong Huang, Xuejian Tang, Qian Chen, Wei Jiang, Qingjie Guo, M. Jalali, Jun Du, Ya Zhai","doi":"10.1088/1674-1056/ad553d","DOIUrl":"https://doi.org/10.1088/1674-1056/ad553d","url":null,"abstract":"\u0000 The spin pumping effect in magnetic heterostructures and multilayers is a highly effective method for the generation and transmission of spin currents. In the increasingly prominent synthetic antiferromagnetic structures, the two ferromagnetic layers demonstrate in-phase and out-of-phase states, corresponding to acoustic and optical precession modes. Within this context, our study explores the spin pumping effect in Py/Ru/Py synthetic antiferromagnetic structures across different modes. The heightened magnetic damping resulting from the spin pumping effect in the in-phase state initially decreases with increasing Py thickness before stabilizing. Conversely, in the out-of-phase state, the amplified damping exceeds that of the in-phase state, suggesting a greater spin relaxation within this configuration, which demonstrates sensitivity to alterations in static exchange interactions. These findings contribute to advancing the application of synthetic antiferromagnetic structures in magnonic devices.","PeriodicalId":504421,"journal":{"name":"Chinese Physics B","volume":" 80","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141374636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-24DOI: 10.1088/1674-1056/ad4ff4
Chen S X, Chen M M, Liu Y, Cao D W, Chen G J
Ferroelectric HfO2 have attracted much attention owing to their superior ferroelectricity at an ultra-thin thickness and good compatibilities with Si-based complementary-metal-oxide-semiconductor (CMOS) technology. However, the crystallization of polar orthorhombic phase (o-phase) HfO2 is less competitive, which greatly limits the ferroelectricity of as-obtained ferroelectric HfO2 thin films. Fortunately, the crystallization of o-phase HfO2 can be thermodynamically modulated via interfacial stress engineering. In this paper, the growth of improved ferroelectric Al doped HfO2 (HfO2:Al) thin films on (111)-oriented Si substrate have been reported. Structural analysis has suggested that non-polar monoclinic HfO2:Al grown on (111)-oriented Si substrate suffered from a strong compressive strain, which promoted the crystallization of (111)-oriented o-phase HfO2 in the as-grown HfO2:Al thin films. In addition, the in-plane lattice of (111)-oriented Si substrate matches well with that of (111)-oriented o-phase HfO2, which further thermally stabilized the o-phase HfO2. Accordingly, an improved ferroelectricity with a remnant polarization (2P r) of 26.7 μC/cm2 has been obtained. The results shown in this work provide a simple way toward the preparation of improved ferroelectric HfO2 thin films.
{"title":"Interfacial stress engineering toward enhancement of ferroelectricity in Al doped HfO2 thin films","authors":"Chen S X, Chen M M, Liu Y, Cao D W, Chen G J","doi":"10.1088/1674-1056/ad4ff4","DOIUrl":"https://doi.org/10.1088/1674-1056/ad4ff4","url":null,"abstract":"\u0000 Ferroelectric HfO2 have attracted much attention owing to their superior ferroelectricity at an ultra-thin thickness and good compatibilities with Si-based complementary-metal-oxide-semiconductor (CMOS) technology. However, the crystallization of polar orthorhombic phase (o-phase) HfO2 is less competitive, which greatly limits the ferroelectricity of as-obtained ferroelectric HfO2 thin films. Fortunately, the crystallization of o-phase HfO2 can be thermodynamically modulated via interfacial stress engineering. In this paper, the growth of improved ferroelectric Al doped HfO2 (HfO2:Al) thin films on (111)-oriented Si substrate have been reported. Structural analysis has suggested that non-polar monoclinic HfO2:Al grown on (111)-oriented Si substrate suffered from a strong compressive strain, which promoted the crystallization of (111)-oriented o-phase HfO2 in the as-grown HfO2:Al thin films. In addition, the in-plane lattice of (111)-oriented Si substrate matches well with that of (111)-oriented o-phase HfO2, which further thermally stabilized the o-phase HfO2. Accordingly, an improved ferroelectricity with a remnant polarization (2P\u0000 r) of 26.7 μC/cm2 has been obtained. The results shown in this work provide a simple way toward the preparation of improved ferroelectric HfO2 thin films.","PeriodicalId":504421,"journal":{"name":"Chinese Physics B","volume":"75 21","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141101745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-24DOI: 10.1088/1674-1056/ad4ff6
Jinggang Hao, Yanfang Zhang, Yijun Zhang, Ke Xu, Genquan Han, Jiandong Ye
Controlling the epitaxial growth mode of semiconductor layers is crucial for optimizing material properties and device performance. In this work, the growth mode of α-Ga2O3 heteroepitaxial layers was modulated by tuning miscut angles (θ) from 0° to 7° off the (10-10) direction of sapphire (0002) substrate. On flat sapphire surfaces, the growth undergoes a typical three-dimensional (3D) growth mode due to the random nucleation on wide substrate terraces, as evidenced by the hillock morphology and high dislocation densities. As the miscut angle increases to θ=5°, the terrace width of sapphire substrate is comparable to the distance between neighboring nuclei, and consequently, the nucleation is guided by terrace edges, which energetically facilitates the growth mode transition into the desirable two-dimensional coherent growth. Consequently, the mean surface roughness decreases to only 0.62 nm, accompanied by a significant reduction in screw and edge dislocations to 0.16×107 cm-2 and 3.58×109 cm-2, respectively. However, the further increment of miscut angles to θ=7° shrink the terrace width less than nucleation distance, and the step-bunching growth mode is dominant. In this circumstance, the misfit strain is released in the initial growth stage, resulting in surface morphology degradation and increased dislocation densities.
{"title":"Step-edge-guided nucleation and growth mode transition of α-Ga2O3 heteroepitaxy on vicinal sapphire","authors":"Jinggang Hao, Yanfang Zhang, Yijun Zhang, Ke Xu, Genquan Han, Jiandong Ye","doi":"10.1088/1674-1056/ad4ff6","DOIUrl":"https://doi.org/10.1088/1674-1056/ad4ff6","url":null,"abstract":"\u0000 Controlling the epitaxial growth mode of semiconductor layers is crucial for optimizing material properties and device performance. In this work, the growth mode of α-Ga2O3 heteroepitaxial layers was modulated by tuning miscut angles (θ) from 0° to 7° off the (10-10) direction of sapphire (0002) substrate. On flat sapphire surfaces, the growth undergoes a typical three-dimensional (3D) growth mode due to the random nucleation on wide substrate terraces, as evidenced by the hillock morphology and high dislocation densities. As the miscut angle increases to θ=5°, the terrace width of sapphire substrate is comparable to the distance between neighboring nuclei, and consequently, the nucleation is guided by terrace edges, which energetically facilitates the growth mode transition into the desirable two-dimensional coherent growth. Consequently, the mean surface roughness decreases to only 0.62 nm, accompanied by a significant reduction in screw and edge dislocations to 0.16×107 cm-2 and 3.58×109 cm-2, respectively. However, the further increment of miscut angles to θ=7° shrink the terrace width less than nucleation distance, and the step-bunching growth mode is dominant. In this circumstance, the misfit strain is released in the initial growth stage, resulting in surface morphology degradation and increased dislocation densities.","PeriodicalId":504421,"journal":{"name":"Chinese Physics B","volume":"7 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141099544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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