Lead free tin halide perovskites for the fabrication of perovskite solar cells have been attracted much attention owing to their outstanding optoelectronic and eco-friendly properties. These materials face severe issues like poor environmental stability, low formation energy, and faster oxidation of tin from Sn2+ to Sn4+ state leading to poor film quality and self-doping. In this work, we have fabricated FA0.75MA0.25SnI3 perovskite thin films via solution processing method and studied conjugated polymer Poly[N-9′-hepta-decanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadia-zole)] (PCDTBT) induced effects in perovskite thin films. Micro-strain of PCDTBT doped FA0.75MA0.25SnI3 perovskite reduced without any change in the crystal structure. Reduction in electron trap density have been observed owing to improved film quality and enlarged perovskite grains. We have observed that Sn4+ content in 0.050wt% PCDTBT doped FA0.75MA0.25SnI3 perovskite film get reduced as shown in X-ray Photoelectron Spectroscopy (XPS) results. The reduction in Sn4+ (cause of self-doping) content shows that PCDTBT doping, maintains the stability of Sn2+ in FA0.75MA0.25SnI3 perovskite thin film. A decrement in hole density from 3.2x1018 cm-3 for pristine to 1.3x1017 cm-3 for 0.050wt% PCDTBT doped FA0.75MA0.25SnI3 perovskite has been observed from C-V measurement which is consistent with XPS results. Thus, PCDTBT doping in perovskite films can effectively tackle the severe issues of tin oxidation and defects in lead-free tin halide perovskite photoactive layer for solar cell application.
{"title":"Stabilization of Sn2+ in FA0.75MA0.25SnI3 perovskite thin films using electron doner polymer PCDTBT and an improvement in charge transport properties for perovskite solar cells","authors":"Ashok Vishwakarma, Pankaj Kumar, Anand Pandey, Lokendra Kumar","doi":"10.1088/1361-6463/ad61f5","DOIUrl":"https://doi.org/10.1088/1361-6463/ad61f5","url":null,"abstract":"\u0000 Lead free tin halide perovskites for the fabrication of perovskite solar cells have been attracted much attention owing to their outstanding optoelectronic and eco-friendly properties. These materials face severe issues like poor environmental stability, low formation energy, and faster oxidation of tin from Sn2+ to Sn4+ state leading to poor film quality and self-doping. In this work, we have fabricated FA0.75MA0.25SnI3 perovskite thin films via solution processing method and studied conjugated polymer Poly[N-9′-hepta-decanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadia-zole)] (PCDTBT) induced effects in perovskite thin films. Micro-strain of PCDTBT doped FA0.75MA0.25SnI3 perovskite reduced without any change in the crystal structure. Reduction in electron trap density have been observed owing to improved film quality and enlarged perovskite grains. We have observed that Sn4+ content in 0.050wt% PCDTBT doped FA0.75MA0.25SnI3 perovskite film get reduced as shown in X-ray Photoelectron Spectroscopy (XPS) results. The reduction in Sn4+ (cause of self-doping) content shows that PCDTBT doping, maintains the stability of Sn2+ in FA0.75MA0.25SnI3 perovskite thin film. A decrement in hole density from 3.2x1018 cm-3 for pristine to 1.3x1017 cm-3 for 0.050wt% PCDTBT doped FA0.75MA0.25SnI3 perovskite has been observed from C-V measurement which is consistent with XPS results. Thus, PCDTBT doping in perovskite films can effectively tackle the severe issues of tin oxidation and defects in lead-free tin halide perovskite photoactive layer for solar cell application.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"121 46","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141656727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-11DOI: 10.1088/1361-6463/ad61f7
Djuric Brice Talonpa Tchoffo, Ismail Benabdallah, A. aberda, P. Neugebauer, A. Belhboub, A. El Fatimy
Addressing the main challenges of defect-free, large-scale synthesis of low-dimensional materials composed of phosphorus atoms is essential for advancing promising phosphorene-based technologies. Using molecular dynamics simulation, we demonstrate the large-scale and defect-free synthesis of phosphorene on Nickel (Ni) substrates. We showed that substrate orientation is crucial in the controllable synthesis of different phosphorene allotropes. Specifically, blue phosphorene was successfully grown on Ni (111) and Ni (100) surfaces, while γ-phosphorene, referred to here as Navy phosphorene, was grown on Ni (110). In addition, temperature control (high temperature) and cooling rate (slow cooling) are also crucial in the formation of P6 hexagons. Finally, we report that the phosphorus pentamers (P5) are the essential precursor for phosphorene synthesis. This work provides a robust framework for understanding and controlling the synthesis of large-area, single-crystalline monolayer phosphorene.
{"title":"Large-Scale Synthesis of Defect-Free Phosphorene on Nickel Substrates: Enabling Atomistic Thickness Devices.","authors":"Djuric Brice Talonpa Tchoffo, Ismail Benabdallah, A. aberda, P. Neugebauer, A. Belhboub, A. El Fatimy","doi":"10.1088/1361-6463/ad61f7","DOIUrl":"https://doi.org/10.1088/1361-6463/ad61f7","url":null,"abstract":"\u0000 Addressing the main challenges of defect-free, large-scale synthesis of low-dimensional materials composed of phosphorus atoms is essential for advancing promising phosphorene-based technologies. Using molecular dynamics simulation, we demonstrate the large-scale and defect-free synthesis of phosphorene on Nickel (Ni) substrates. We showed that substrate orientation is crucial in the controllable synthesis of different phosphorene allotropes. Specifically, blue phosphorene was successfully grown on Ni (111) and Ni (100) surfaces, while γ-phosphorene, referred to here as Navy phosphorene, was grown on Ni (110). In addition, temperature control (high temperature) and cooling rate (slow cooling) are also crucial in the formation of P6 hexagons. Finally, we report that the phosphorus pentamers (P5) are the essential precursor for phosphorene synthesis. This work provides a robust framework for understanding and controlling the synthesis of large-area, single-crystalline monolayer phosphorene.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"127 21","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141656654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-11DOI: 10.1088/1361-6463/ad61f9
Li Ye, Libo Zhang, Shaotong Wang, Weiwei Zhao, Chongji Huang, Wenshuai Gao, Xue Liu, Tiaoyang Li, Tao Li, Tai Min, Mingliang Tian, Xuegang Chen
Time-dependent second harmonic generation (TD-SHG) is an emergent sensitive and non-contact method to qualitatively/quantitively characterize the semiconductor materials, which is closely related to the interfacial electric field. Here, the TD-SHG technique is used to study the interface quality of atomic layer deposited 15 nm HfO2/Si (n-type/p-type) samples, which is compared to the conventional electrical characterization method. A relation between the interface state density and the time constant extracted from TD-SHG is revealed, indicating that TD-SHG is an effective method to evaluate the interface state density. In addition, the dopant type and dopant density can be disclosed by resolving the dynamic process of TD-SHG. The scenario of interfacial electric field between the initial electric field and the laser-induced electric field is proposed to explain the time-dependent evolution of SHG signal. In conclusion, the TD-SHG is a sensitive and non-contact method as well as simple and fast to characterize the semiconductor materials, which may facilitate the semiconductor in-line testing.
{"title":"The study of interface quality in HfO2/Si films probed by second harmonic generation","authors":"Li Ye, Libo Zhang, Shaotong Wang, Weiwei Zhao, Chongji Huang, Wenshuai Gao, Xue Liu, Tiaoyang Li, Tao Li, Tai Min, Mingliang Tian, Xuegang Chen","doi":"10.1088/1361-6463/ad61f9","DOIUrl":"https://doi.org/10.1088/1361-6463/ad61f9","url":null,"abstract":"\u0000 Time-dependent second harmonic generation (TD-SHG) is an emergent sensitive and non-contact method to qualitatively/quantitively characterize the semiconductor materials, which is closely related to the interfacial electric field. Here, the TD-SHG technique is used to study the interface quality of atomic layer deposited 15 nm HfO2/Si (n-type/p-type) samples, which is compared to the conventional electrical characterization method. A relation between the interface state density and the time constant extracted from TD-SHG is revealed, indicating that TD-SHG is an effective method to evaluate the interface state density. In addition, the dopant type and dopant density can be disclosed by resolving the dynamic process of TD-SHG. The scenario of interfacial electric field between the initial electric field and the laser-induced electric field is proposed to explain the time-dependent evolution of SHG signal. In conclusion, the TD-SHG is a sensitive and non-contact method as well as simple and fast to characterize the semiconductor materials, which may facilitate the semiconductor in-line testing.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"139 33","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141656078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-10DOI: 10.1088/1361-6463/ad6166
Abhishek Kumar, S. Tomer, .. Vandana, T. Fix, Mrinal Dutta, S. K. Srivastava, Pathi Prathap
The performance of MoOx based devices is highly influenced by the presence of oxygen vacancies and the trap density at the oxide-semiconductor interface. This paper presents a detailed investigation of the surface states present at the MoOx/c-Si interface through capacitance and conductance methods. Thin films of MoOx were deposited on n-Si using DC reactive sputtering of Mo under varying oxygen flow rates and studied the modulation of metal-insulator-semiconductor (MIS) device parameters using appropriate analysis methods. The capacitance-voltage (CV) analysis reveals the formation of nearly dielectric films at an intermediate oxygen flow rate of 15 sccm, exhibiting a dielectric constant of 24 and negative fixed charges of approximately 1.81x1012 cm-2. Work function evaluated from the Kelvin probe measurements was found to be maximum of 5.08 eV for the films deposited at the intermediate oxygen flow rate of 15 sccm. Furthermore, admittance analysis was performed on all the films to determine the loss mechanism in different regions, ranging from inversion to accumulation. Parallel conductance for different bias conditions was studied and observed the domination of oxide traps at the higher oxygen flow (> 20 sccm). Investigation of deep level defects were performed using the deep level transient spectroscopy (DLTS) in the temperature range of 100 K to 475 K, along with the C-V measurements. A transition in C-V behavior was observed below room temperature that shows the minority carrier response time is controlled by generation-recombination at low temperatures and by diffusion at high temperatures. The X-ray photoelectron spectroscopy (XPS) measurements showed that the films are sub-stoichiometric with the dominant oxidation state of Mo+6. The results have been discussed and presented in detail.
{"title":"Oxygen-mediated defect evolution and interface analysis of MoOx/n-Si devices","authors":"Abhishek Kumar, S. Tomer, .. Vandana, T. Fix, Mrinal Dutta, S. K. Srivastava, Pathi Prathap","doi":"10.1088/1361-6463/ad6166","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6166","url":null,"abstract":"\u0000 The performance of MoOx based devices is highly influenced by the presence of oxygen vacancies and the trap density at the oxide-semiconductor interface. This paper presents a detailed investigation of the surface states present at the MoOx/c-Si interface through capacitance and conductance methods. Thin films of MoOx were deposited on n-Si using DC reactive sputtering of Mo under varying oxygen flow rates and studied the modulation of metal-insulator-semiconductor (MIS) device parameters using appropriate analysis methods. The capacitance-voltage (CV) analysis reveals the formation of nearly dielectric films at an intermediate oxygen flow rate of 15 sccm, exhibiting a dielectric constant of 24 and negative fixed charges of approximately 1.81x1012 cm-2. Work function evaluated from the Kelvin probe measurements was found to be maximum of 5.08 eV for the films deposited at the intermediate oxygen flow rate of 15 sccm. Furthermore, admittance analysis was performed on all the films to determine the loss mechanism in different regions, ranging from inversion to accumulation. Parallel conductance for different bias conditions was studied and observed the domination of oxide traps at the higher oxygen flow (> 20 sccm). Investigation of deep level defects were performed using the deep level transient spectroscopy (DLTS) in the temperature range of 100 K to 475 K, along with the C-V measurements. A transition in C-V behavior was observed below room temperature that shows the minority carrier response time is controlled by generation-recombination at low temperatures and by diffusion at high temperatures. The X-ray photoelectron spectroscopy (XPS) measurements showed that the films are sub-stoichiometric with the dominant oxidation state of Mo+6. The results have been discussed and presented in detail.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"34 34","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141659239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-10DOI: 10.1088/1361-6463/ad6167
Yazheng Hao, Rui Yang, Chunhui Li, Yan Wang
We demonstrate the generation of highly directive circularly polarized beams by proposing a meta-lens to calibrate the near fields over the holographic surface. Such a design possesses the merits of ultra-low profile as a lens system on the basis of phase compensation of a specific radiating aperture rather than the conventional consideration of the lens focus, and the ratio between the overall height of the antenna architecture and diameter of radiating aperture is only 0.09. Especially, the proposed meta-lens integrated holographic surface also offers a satisfactory solution to improve the overall efficiency of holographic antennas, and the experimental results verify the proposed design with 27.6 dBic measured gain and 40.4% aperture efficiency at 15 GHz. We expect the proposed strategy of integrating phase compensation lens closely over the holographic surface, pave the way for highly efficient meta-radiators with ultra-low profile.
{"title":"Highly efficient meta-lens integrated holographic surface antenna","authors":"Yazheng Hao, Rui Yang, Chunhui Li, Yan Wang","doi":"10.1088/1361-6463/ad6167","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6167","url":null,"abstract":"\u0000 We demonstrate the generation of highly directive circularly polarized beams by proposing a meta-lens to calibrate the near fields over the holographic surface. Such a design possesses the merits of ultra-low profile as a lens system on the basis of phase compensation of a specific radiating aperture rather than the conventional consideration of the lens focus, and the ratio between the overall height of the antenna architecture and diameter of radiating aperture is only 0.09. Especially, the proposed meta-lens integrated holographic surface also offers a satisfactory solution to improve the overall efficiency of holographic antennas, and the experimental results verify the proposed design with 27.6 dBic measured gain and 40.4% aperture efficiency at 15 GHz. We expect the proposed strategy of integrating phase compensation lens closely over the holographic surface, pave the way for highly efficient meta-radiators with ultra-low profile.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"13 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141662236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-09DOI: 10.1088/1361-6463/ad60d5
Wenyu Li, Yang Chen, Chun Liu, Yi Zhang
The preparation of metal hydrogel precursors toward atomically dispersed aerogel catalysts is a captivating subject within the catalysis research domain, exhibiting promising applications in various fields. This minireview intend to summarize those novel design principles and practical applications of metal hydrogel precursors in the creation of atomically dispersed aerogel catalysts. The manuscript focuses on crucial aspects such as the meticulous selection of metal sources and initiators, the intricate process of gel preparation, a comparative analysis of different drying methods, and strategic optimization techniques to enhance the performance of metal hydrogel precursors. Moreover, this article delves into the exploration of atomically dispersed aerogel catalysts derived from metal hydrogel precursors in the realms of photocatalysis and electrocatalysis. Lastly, existing challenges are addressed, and prospective future directions for development are outlined.
{"title":"Design strategies and applications of atomically dispersed aerogel catalysts prepared from metal hydrogel formation","authors":"Wenyu Li, Yang Chen, Chun Liu, Yi Zhang","doi":"10.1088/1361-6463/ad60d5","DOIUrl":"https://doi.org/10.1088/1361-6463/ad60d5","url":null,"abstract":"\u0000 The preparation of metal hydrogel precursors toward atomically dispersed aerogel catalysts is a captivating subject within the catalysis research domain, exhibiting promising applications in various fields. This minireview intend to summarize those novel design principles and practical applications of metal hydrogel precursors in the creation of atomically dispersed aerogel catalysts. The manuscript focuses on crucial aspects such as the meticulous selection of metal sources and initiators, the intricate process of gel preparation, a comparative analysis of different drying methods, and strategic optimization techniques to enhance the performance of metal hydrogel precursors. Moreover, this article delves into the exploration of atomically dispersed aerogel catalysts derived from metal hydrogel precursors in the realms of photocatalysis and electrocatalysis. Lastly, existing challenges are addressed, and prospective future directions for development are outlined.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"38 16","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141663623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-09DOI: 10.1088/1361-6463/ad60d7
Diana I. Meira, Ana I. Barbosa, M. Proença, Patrícia Pereira-Silva, J. Borges, V. Correlo, Rui L Reis, Filipe Vaz
The immobilization design strategy plays an important role in biosensor development and its sensing performance. Both adsorption (physisorption) and cross-linker functionalization (chemisorption) are common approaches for immobilizing a bioreceptor layer. In this work, these two approaches were studied and compared, envisaging a functional and strongly attached bioreceptor layer onto sputtered Au-TiO2 thin films. DSP cross-linker (Lomant's reagent) was used in the thin film’s functionalization, and the effect of different concentrations on the development of an adhesion layer was investigated. Surface morphology analysis of functionalized thin films suggested the development of uniformly coated self-assembled layers. However, DSP islands with a fractal structure were found for a concentration of 4 mg mL-1. Infrared spectroscopy confirmed the cross-linker functionalization at the thin film’s surface. Confocal microscopy of immobilized fluorescent antibodies revealed that DSP islands improve the chemical surface area available for bioreceptor immobilization. Moreover, an immunoassay using mouse IgG interaction with fluorescent anti-mouse IgG (Fab specific), working as capture and detection antibody, respectively, showed that DSP functionalization favors antibodies orientation and adhesion strength to the surface, when compared to physisorption.
{"title":"Immobilizing Antibody Biorecognition Layers on Au-TiO2 Thin Films: Direct (physisorption) vs. DSP-crosslinking (chemisorption) Surface Functionalization","authors":"Diana I. Meira, Ana I. Barbosa, M. Proença, Patrícia Pereira-Silva, J. Borges, V. Correlo, Rui L Reis, Filipe Vaz","doi":"10.1088/1361-6463/ad60d7","DOIUrl":"https://doi.org/10.1088/1361-6463/ad60d7","url":null,"abstract":"\u0000 The immobilization design strategy plays an important role in biosensor development and its sensing performance. Both adsorption (physisorption) and cross-linker functionalization (chemisorption) are common approaches for immobilizing a bioreceptor layer. In this work, these two approaches were studied and compared, envisaging a functional and strongly attached bioreceptor layer onto sputtered Au-TiO2 thin films. DSP cross-linker (Lomant's reagent) was used in the thin film’s functionalization, and the effect of different concentrations on the development of an adhesion layer was investigated. Surface morphology analysis of functionalized thin films suggested the development of uniformly coated self-assembled layers. However, DSP islands with a fractal structure were found for a concentration of 4 mg mL-1. Infrared spectroscopy confirmed the cross-linker functionalization at the thin film’s surface. Confocal microscopy of immobilized fluorescent antibodies revealed that DSP islands improve the chemical surface area available for bioreceptor immobilization. Moreover, an immunoassay using mouse IgG interaction with fluorescent anti-mouse IgG (Fab specific), working as capture and detection antibody, respectively, showed that DSP functionalization favors antibodies orientation and adhesion strength to the surface, when compared to physisorption.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"82 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141664487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-09DOI: 10.1088/1361-6463/ad60d8
Yaoxun Zhao, She Chen, Kelin Li, Tianwei Wang, F. Wang
Ion wind propulsion systems have potential applications in the field of unmanned aerial vehicle (UAV) due to their compactness, quiet operation, and simple design. Previous studies have focused on the influences of power source, electrode arrangement, size, and shape on the output thrust characteristics. However, few studies have been performed on the environmental conditions, which can be beneficial for the practical applications of ion wind aircraft in various climatic conditions. In this work, a measurement platform of the output characteristics of ion wind propulsion system under various environmental conditions has been established. The experimental pressure range is 1 to 0.7 atm, and the relative humidity (RH) is 30% to 92%. The effects of air pressure and humidity, and voltage level on the thrust, thrust-to-power radio (TPR) corona current have been investigated. The results show that the corona current and thrust of the wire-wing electrode array decrease with RH within the range of 30% to 80%. Under higher humidity, the corona current and thrust tend to increase at most voltage levels. Moreover, the thrust and current both decrease with reduced pressure when keeping the voltage-to-pressure ratio (U/P) unchanged. It was also found that the thrust is roughly proportional to the square of the pressure. Finally, the possible explanations of the coupled influences on the output characteristics were discussed.
{"title":"Influence of humidity and air pressure on thrust characteristics of ion wind propulsion systems","authors":"Yaoxun Zhao, She Chen, Kelin Li, Tianwei Wang, F. Wang","doi":"10.1088/1361-6463/ad60d8","DOIUrl":"https://doi.org/10.1088/1361-6463/ad60d8","url":null,"abstract":"\u0000 Ion wind propulsion systems have potential applications in the field of unmanned aerial vehicle (UAV) due to their compactness, quiet operation, and simple design. Previous studies have focused on the influences of power source, electrode arrangement, size, and shape on the output thrust characteristics. However, few studies have been performed on the environmental conditions, which can be beneficial for the practical applications of ion wind aircraft in various climatic conditions. In this work, a measurement platform of the output characteristics of ion wind propulsion system under various environmental conditions has been established. The experimental pressure range is 1 to 0.7 atm, and the relative humidity (RH) is 30% to 92%. The effects of air pressure and humidity, and voltage level on the thrust, thrust-to-power radio (TPR) corona current have been investigated. The results show that the corona current and thrust of the wire-wing electrode array decrease with RH within the range of 30% to 80%. Under higher humidity, the corona current and thrust tend to increase at most voltage levels. Moreover, the thrust and current both decrease with reduced pressure when keeping the voltage-to-pressure ratio (U/P) unchanged. It was also found that the thrust is roughly proportional to the square of the pressure. Finally, the possible explanations of the coupled influences on the output characteristics were discussed.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"114 34","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141665676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Long-term stability and power conversion efficiency of perovskite solar cells are strongly affected by their precursor compositions and intermediate phases during the fabrication process. In general, complex chemical reactions happen in a short time scale during the nucleation and crystal growth steps. However, the ex-situ characterization probes cannot capture the dynamics of perovskite film formation and degradation. In this review, we discussed the ambient air-compatible in-situ characterization probes that are used to monitor the evolution of the structural, morphological, and optoelectronic properties of perovskite films, which provides a deep understanding of the perovskite crystal formation process.
{"title":"Ambient air-compatible in-situ characterizations of metal halide perovskite for high-efficiency solar cells","authors":"Yanru Guo, Xiaojia Luo, Jinge Han, Haochen Tong, Xue Liu, Ru Li","doi":"10.1088/1361-6463/ad60d6","DOIUrl":"https://doi.org/10.1088/1361-6463/ad60d6","url":null,"abstract":"\u0000 Long-term stability and power conversion efficiency of perovskite solar cells are strongly affected by their precursor compositions and intermediate phases during the fabrication process. In general, complex chemical reactions happen in a short time scale during the nucleation and crystal growth steps. However, the ex-situ characterization probes cannot capture the dynamics of perovskite film formation and degradation. In this review, we discussed the ambient air-compatible in-situ characterization probes that are used to monitor the evolution of the structural, morphological, and optoelectronic properties of perovskite films, which provides a deep understanding of the perovskite crystal formation process.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"124 17","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141666415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-08DOI: 10.1088/1361-6463/ad600c
S. Barman, S. Bhattacharjee
Micro-glass capillaries emerge as an important tool for the lossless guiding and focusing of ion beams (Takao M Kojima 2018 J. Phys. B: At. Mol. Opt. Phys. 51 042001). The self-focusing mechanism of the capillaries is primarily governed by charged patches induced on their inner walls by the incident beam (Stolterfoht et al 2002 Phys. Rev. Lett. 88 133201). However, the dominance of space charge forces over self-focusing forces in intense (J ∽ 1 A/m2) ion beams establishes a self-focusing limit, posing challenges to beam focusing beyond this limit. In this work, a novel method is introduced, demonstrating electrical control over the charge patch dynamics through an externally applied bias voltage, thereby enabling the focusing of Ar ion beams beyond the self-focusing limit (Maurya et al 2019 J. Phys. D: Appl. Phys. 52 055205). Experimental results reveal that adjusting the biasing voltage allows overcoming the self-focusing limit, resulting in the generation of a high-intensity (Jout ∽ 3.05 × 105 A/m2) nano-beam (∽ 160 nm). Furthermore, electrical control is shown to enhance the performance of both straight and tapered capillaries (SC/TC), with the TC being more effective for nano-beam generation. A Particle-In-Cell (PIC) simulation code has been developed to explain the experimental results. The implications of high-intensity nano ion beams in advancing nanopatterning, nanoscale material analysis, and matter wave interferometry, underscore significant contributions to research and innovation within electronics, materials science, nanotechnology, and emerging quantum technologies.
微玻璃毛细管成为无损引导和聚焦离子束的重要工具（Takao M Kojima 2018 J. Phys. B: At. Mol. Opt. Phys. 51 042001）。毛细管的自聚焦机制主要受入射光束在其内壁上诱导的带电斑块的支配（Stolterfoht 等人，2002 年，《物理评论快报》，88 133201 页）。然而，在强离子束（J ∽ 1 A/m2）中，空间电荷力比自聚焦力更占优势，这就确立了自聚焦极限，为超出这一极限的光束聚焦带来了挑战。在这项工作中，引入了一种新方法，通过外部施加的偏置电压对电荷斑块动态进行电控制，从而使氩离子束的聚焦超过自聚焦极限（Maurya et al 2019 J. Phys. D: Appl. Phys. 52 055205）。实验结果表明，调整偏置电压可以克服自聚焦极限，从而产生高强度（Jout ∽ 3.05 × 105 A/m2 ）纳米光束（∽ 160 nm）。此外，电子控制还能提高直毛细管和锥形毛细管（SC/TC）的性能，其中锥形毛细管对纳米光束的产生更为有效。为了解释实验结果，我们开发了粒子池（PIC）模拟代码。高强度纳米离子束在推动纳米图案化、纳米级材料分析和物质波干涉测量方面的影响，强调了对电子学、材料科学、纳米技术和新兴量子技术领域的研究和创新的重大贡献。
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