Pub Date : 2024-07-15DOI: 10.1088/1361-6463/ad6330
Xiangyu Jin, Yonggang Zhou, Jian Lou, Si-yuan Liu, Shaobin Liu
This article examines the feasibility of integrating solid-state plasma surface p-i-n (S-PIN) diodes into on-chip slots using silicon-on-insulator (SOI) technology. Two categories of solid-state plasma S-PIN diodes are characterized. Simulations analyze the current-voltage (I-V) characteristics, carrier concentrations, potential distribution, and thermal considerations of both single and dual S-PIN diodes, with optimization of their structural parameters and sizes. Experimental tests on fabricated S-PIN diodes of varying sizes with bias lines embedded in the on-chip slots show favorable I-V characteristics for both types of diodes. The measured results closely align with simulation predictions for the diodes' conduction onset voltages. Additionally, a cavity-backed slot antenna (CBSA) is proposed to evaluate and compare radiation characteristics resulting from integrating different types of S-PIN diodes.
{"title":"Frequency reconfigurable slot antenna utilizing solid-state plasma S-PIN diodes: simulation and experimental analysis","authors":"Xiangyu Jin, Yonggang Zhou, Jian Lou, Si-yuan Liu, Shaobin Liu","doi":"10.1088/1361-6463/ad6330","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6330","url":null,"abstract":"\u0000 This article examines the feasibility of integrating solid-state plasma surface p-i-n (S-PIN) diodes into on-chip slots using silicon-on-insulator (SOI) technology. Two categories of solid-state plasma S-PIN diodes are characterized. Simulations analyze the current-voltage (I-V) characteristics, carrier concentrations, potential distribution, and thermal considerations of both single and dual S-PIN diodes, with optimization of their structural parameters and sizes. Experimental tests on fabricated S-PIN diodes of varying sizes with bias lines embedded in the on-chip slots show favorable I-V characteristics for both types of diodes. The measured results closely align with simulation predictions for the diodes' conduction onset voltages. Additionally, a cavity-backed slot antenna (CBSA) is proposed to evaluate and compare radiation characteristics resulting from integrating different types of S-PIN diodes.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141648076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-15DOI: 10.1088/1361-6463/ad632c
Jose Manuel Taboada Vasquez, Ankita Mukherjee, Smriti Singh, Vishal Khandelwal, S. Yuvaraja, Glen Isaac Maciel García, M. Rajbhar, Xiaohang Li, B. Sarkar
In recent years, p-type NiOx has emerged as a promising alternative to realize kilovolt-class β-Ga2O3 based PN junction diodes. However, only a handful number of studies have been performed to realize β-Ga2O3-based unipolar diodes using NiOx as guard-ring or floating rings. In this work, we investigated the device-design of NiOx/β-Ga2O3 unipolar diodes using Technology Computer Aided Design (TCAD) simulations and experimental validations. We show that a systematic electric field management approach can potentially lead to NiOx/β-Ga2O3 heterojunction unipolar diode offering improved breakdown characteristics without a serious compromise in ON-state resistance. Accordingly, NiOx/β-Ga2O3 heterojunction diode in merged-PIN Schottky configuration is shown to outperform the regular Schottky diode or junction barrier Schottky diode counterpart. The analysis performed in this work is thought to be valuable in device-design of β-Ga2O3-based unipolar diodes that use a different p-type semiconductor candidate as guard ring and floating rings.
{"title":"Field Management in NiOx/β-Ga2O3 Merged-PIN Schottky Diodes: Simulation Studies and Experimental Validation","authors":"Jose Manuel Taboada Vasquez, Ankita Mukherjee, Smriti Singh, Vishal Khandelwal, S. Yuvaraja, Glen Isaac Maciel García, M. Rajbhar, Xiaohang Li, B. Sarkar","doi":"10.1088/1361-6463/ad632c","DOIUrl":"https://doi.org/10.1088/1361-6463/ad632c","url":null,"abstract":"\u0000 In recent years, p-type NiOx has emerged as a promising alternative to realize kilovolt-class β-Ga2O3 based PN junction diodes. However, only a handful number of studies have been performed to realize β-Ga2O3-based unipolar diodes using NiOx as guard-ring or floating rings. In this work, we investigated the device-design of NiOx/β-Ga2O3 unipolar diodes using Technology Computer Aided Design (TCAD) simulations and experimental validations. We show that a systematic electric field management approach can potentially lead to NiOx/β-Ga2O3 heterojunction unipolar diode offering improved breakdown characteristics without a serious compromise in ON-state resistance. Accordingly, NiOx/β-Ga2O3 heterojunction diode in merged-PIN Schottky configuration is shown to outperform the regular Schottky diode or junction barrier Schottky diode counterpart. The analysis performed in this work is thought to be valuable in device-design of β-Ga2O3-based unipolar diodes that use a different p-type semiconductor candidate as guard ring and floating rings.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141645193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-15DOI: 10.1088/1361-6463/ad632e
an wang, Zunyi Tian, Yang Peng, Haitao Wang, Mengmeng Zhang, Shuobei Sun, Z. Hou
The degradation of the dielectric layer is a common issue in dielectric barrier discharge (DBD). The performance of DBD devices may suffer from instability due to potential corrosion of the dielectric layer caused by discharge, which could even result in structural failure. To gain a comprehensive understanding of the degradation of DBD devices during discharge, the evolution of the performance of DBD devices with various dielectric materials over time is studied. Periodic patterns are found to form on the dielectric surface along the edge of the high-voltage electrode. The electrical data, emission spectra, and surface morphologies of DBD devices with three different dielectric materials, namely ceramics, glass, and PCB, are obtained during an eight-hour discharge. The electrical and thermodynamic characteristics of DBD devices with the three dielectric materials are found to initially decrease by about 20~40%. Subsequently, they remain stable in devices with ceramics and PCB dielectric layers but increase in devices with glass dielectric layers until the end. Surface morphologies reveal that periodic patterns consisting of metal accumulations, etching pits, and metal depositions form on the surfaces of ceramics, glass, and PCBs, respectively. Some organic compounds vaporize from the surface of PCBs. The deposition, etching, and vaporization could be reasons for changes in the electrical and thermodynamic characteristics. It shows that degradation occurs not only in organic dielectrics like polymers but also in inorganic dielectrics such as ceramics and glass. To enhance stability and prevent potential failures and overestimations, electrical and optical measurements could be utilized as diagnostic methods in applications involving DBD devices.
{"title":"The time evolution of electrical and thermodynamic characteristics of surface dielectric barrier discharge caused by dielectric degradation","authors":"an wang, Zunyi Tian, Yang Peng, Haitao Wang, Mengmeng Zhang, Shuobei Sun, Z. Hou","doi":"10.1088/1361-6463/ad632e","DOIUrl":"https://doi.org/10.1088/1361-6463/ad632e","url":null,"abstract":"\u0000 The degradation of the dielectric layer is a common issue in dielectric barrier discharge (DBD). The performance of DBD devices may suffer from instability due to potential corrosion of the dielectric layer caused by discharge, which could even result in structural failure. To gain a comprehensive understanding of the degradation of DBD devices during discharge, the evolution of the performance of DBD devices with various dielectric materials over time is studied. Periodic patterns are found to form on the dielectric surface along the edge of the high-voltage electrode. The electrical data, emission spectra, and surface morphologies of DBD devices with three different dielectric materials, namely ceramics, glass, and PCB, are obtained during an eight-hour discharge. The electrical and thermodynamic characteristics of DBD devices with the three dielectric materials are found to initially decrease by about 20~40%. Subsequently, they remain stable in devices with ceramics and PCB dielectric layers but increase in devices with glass dielectric layers until the end. Surface morphologies reveal that periodic patterns consisting of metal accumulations, etching pits, and metal depositions form on the surfaces of ceramics, glass, and PCBs, respectively. Some organic compounds vaporize from the surface of PCBs. The deposition, etching, and vaporization could be reasons for changes in the electrical and thermodynamic characteristics. It shows that degradation occurs not only in organic dielectrics like polymers but also in inorganic dielectrics such as ceramics and glass. To enhance stability and prevent potential failures and overestimations, electrical and optical measurements could be utilized as diagnostic methods in applications involving DBD devices.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141644968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
All-organic dielectric polymers are materials of choice for modern power electronics and high-density energy storage, and their performance can be significantly improved by doping trace amounts of organic molecular semiconductors with strong electron-affinity energy to suppress charge conduction losses. Insight into the breakdown mechanism of polymers/organic molecular semiconductor composites is essential for the design of high-performance dielectric polymers. This study investigates the impact of the doping concentration of organic molecular semiconductors, dielectric constants, and trap depths on the breakdown performance of dielectric polymers under high temperature and electric fields. A modified phase-field model, incorporating deep traps and carriers’ coulomb capture radius, has been developed to facilitate high-throughput simulations of electrical breakdown in polymer/organic molecular semiconductor composites. This work accurately predicted the breakdown strength of all-organic composites using high-throughput phase-field simulation data as input for machine learning, which provides crucial theoretical support for designing all-organic composite dielectric polymers for energy storage capacitors under extreme conditions.
{"title":"High-throughput phase field simulation and machine learning for predicting the breakdown performance of all-organic composites","authors":"Dong-Duan Liu, Qiao Li, Yujie Zhu, Bingxu Jiang, Tan Zeng, Hongxiao Yang, Jinliang He, Qi Li, Chao Yuan","doi":"10.1088/1361-6463/ad626e","DOIUrl":"https://doi.org/10.1088/1361-6463/ad626e","url":null,"abstract":"\u0000 All-organic dielectric polymers are materials of choice for modern power electronics and high-density energy storage, and their performance can be significantly improved by doping trace amounts of organic molecular semiconductors with strong electron-affinity energy to suppress charge conduction losses. Insight into the breakdown mechanism of polymers/organic molecular semiconductor composites is essential for the design of high-performance dielectric polymers. This study investigates the impact of the doping concentration of organic molecular semiconductors, dielectric constants, and trap depths on the breakdown performance of dielectric polymers under high temperature and electric fields. A modified phase-field model, incorporating deep traps and carriers’ coulomb capture radius, has been developed to facilitate high-throughput simulations of electrical breakdown in polymer/organic molecular semiconductor composites. This work accurately predicted the breakdown strength of all-organic composites using high-throughput phase-field simulation data as input for machine learning, which provides crucial theoretical support for designing all-organic composite dielectric polymers for energy storage capacitors under extreme conditions.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141654533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-12DOI: 10.1088/1361-6463/ad6270
Nataliya Rovnyagina, Denis Davydov, Vladimir Lazarev, Alexey V. Lychagin, Peter Timashev, Gleb Budylin, Evgeny Shirshin
Diseased conditions of articular cartilage such as osteoarthritis (OA) are accompanied by a change in the water concentration, together with a decrease in cartilage thickness. These parameters are important indicators of the normal joint functioning. Light scattering in a heterogeneous joint tissue is a complex process and it is important to supplement its study with understanding gained from modelling. In this work we employed Monte Carlo (MC) for analysis of the relationship between changes in cartilage parameters and calculated diffuse reflection spectra (DRS). It has been shown that water absorption peak at 980 nm is determined by both water content and cartilage thickness, while changes in DRS spectra at 1450 nm are mostly driven only by water content. Since independent assessment of these parameters is clinically relevant, several approaches for their determination were developed. A heuristic algorithm for cartilage thickness determination and its quality metrics (R2= 0.96) were obtained. Several regression models using the features of DRS signal formation at different wavelengths were developed and it was shown that the use of a wide range of wavelengths (850 – 1700 nm) allows to determine the cartilage water concentration and its thickness with the accuracy R2 0.96 and 0.99 while measuring at different probe-detector distances.
{"title":"Evaluation of cartilage properties from NIR diffuse reflectance spectra: numerical simulation","authors":"Nataliya Rovnyagina, Denis Davydov, Vladimir Lazarev, Alexey V. Lychagin, Peter Timashev, Gleb Budylin, Evgeny Shirshin","doi":"10.1088/1361-6463/ad6270","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6270","url":null,"abstract":"\u0000 Diseased conditions of articular cartilage such as osteoarthritis (OA) are accompanied by a change in the water concentration, together with a decrease in cartilage thickness. These parameters are important indicators of the normal joint functioning. Light scattering in a heterogeneous joint tissue is a complex process and it is important to supplement its study with understanding gained from modelling. In this work we employed Monte Carlo (MC) for analysis of the relationship between changes in cartilage parameters and calculated diffuse reflection spectra (DRS). It has been shown that water absorption peak at 980 nm is determined by both water content and cartilage thickness, while changes in DRS spectra at 1450 nm are mostly driven only by water content. Since independent assessment of these parameters is clinically relevant, several approaches for their determination were developed. A heuristic algorithm for cartilage thickness determination and its quality metrics (R2= 0.96) were obtained. Several regression models using the features of DRS signal formation at different wavelengths were developed and it was shown that the use of a wide range of wavelengths (850 – 1700 nm) allows to determine the cartilage water concentration and its thickness with the accuracy R2 0.96 and 0.99 while measuring at different probe-detector distances.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141652326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-12DOI: 10.1088/1361-6463/ad6268
Nimra Tufail, Gul washa, Shakir Ullah, Abdul Wahab Muhammad Ali, Hira Affan, N. Rekik, Umer Farooq
We study theoretically and numerically the nonlinear propagation of ion acoustic waves (IAWs) in plasma. The electrostatic potential in electron-ion (e-i) plasma is mimicked by the cylindrical Kadomtsev-Petviashvili (cKP) equation using the traditional reductive perturbation approach. By applying the direct integration technique, the soliton solution is obtained. The results of simulations carried out numerically show that the amplitude as well as width of the soliton solution are signi…cantly in uenced by the plasma parameters. The exploration of IAWs propagation in laboratory as well as space plasmas may bene…t from the current work.
{"title":"Cylindrical Kadomtsev Petviashvili equation for ion acoustic waves with double spectral indices distributed electrons","authors":"Nimra Tufail, Gul washa, Shakir Ullah, Abdul Wahab Muhammad Ali, Hira Affan, N. Rekik, Umer Farooq","doi":"10.1088/1361-6463/ad6268","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6268","url":null,"abstract":"\u0000 We study theoretically and numerically the nonlinear propagation of ion acoustic waves (IAWs) in plasma. The electrostatic potential in electron-ion (e-i) plasma is mimicked by the cylindrical Kadomtsev-Petviashvili (cKP) equation using the traditional reductive perturbation approach. By applying the direct integration technique, the soliton solution is obtained. The results of simulations carried out numerically show that the amplitude as well as width of the soliton solution are signi…cantly in uenced by the plasma parameters. The exploration of IAWs propagation in laboratory as well as space plasmas may bene…t from the current work.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141652760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-12DOI: 10.1088/1361-6463/ad6271
I. Angervo, A. Antola, Tuomas Vaimala, Anu Malmi, A. Schulman, H. Huhtinen, P. Paturi
We report on the impact of the growth method and substrate-induced crystalline quality on the performance of planar Al/Gd0.2Ca0.8MnO3/Au memristor devices. Structural, magnetic, and resistive properties were thoroughly examined for fundamental characterizations, with a particular emphasis on their correlation with the memristive properties of fabricated devices. Our findings suggest that memristor structures grown on single crystal SrTiO3 substrates using pulsed laser deposition consistently exhibit superior crystalline quality compared to those fabricated using chemical solution deposition and on silicon-based substrates. Despite variations in growth method and substrate, all memristor structures display typical resistive switching behaviour, distinguishing between high-resistance and low-resistance states. However, endurance and retention measurements demonstrate that memristor structures produced via pulsed laser deposition on single crystalline SrTiO3 demonstrate the most favourable resistive switching properties. To elucidate the mechanisms underlying the differences in resistive switching behavior across substrates and deposition methods, we extensively discuss these issues in the context of structural distortion and conduction mechanisms.
{"title":"Importance of growth method and substrate-induced crystalline quality in Al/Gd0.2Ca0.8MnO3/Au memristor devices","authors":"I. Angervo, A. Antola, Tuomas Vaimala, Anu Malmi, A. Schulman, H. Huhtinen, P. Paturi","doi":"10.1088/1361-6463/ad6271","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6271","url":null,"abstract":"\u0000 We report on the impact of the growth method and substrate-induced crystalline quality on the performance of planar Al/Gd0.2Ca0.8MnO3/Au memristor devices. Structural, magnetic, and resistive properties were thoroughly examined for fundamental characterizations, with a particular emphasis on their correlation with the memristive properties of fabricated devices. Our findings suggest that memristor structures grown on single crystal SrTiO3 substrates using pulsed laser deposition consistently exhibit superior crystalline quality compared to those fabricated using chemical solution deposition and on silicon-based substrates. Despite variations in growth method and substrate, all memristor structures display typical resistive switching behaviour, distinguishing between high-resistance and low-resistance states. However, endurance and retention measurements demonstrate that memristor structures produced via pulsed laser deposition on single crystalline SrTiO3 demonstrate the most favourable resistive switching properties. To elucidate the mechanisms underlying the differences in resistive switching behavior across substrates and deposition methods, we extensively discuss these issues in the context of structural distortion and conduction mechanisms.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141652942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-12DOI: 10.1088/1361-6463/ad6274
Arthur Hellé, R. Hugon, F. Brochard, Sarah Chouchene, G. Marcos, Jérôme Moritz, Patrick Schweitzer
Electrical and fast imaging measurements are performed on an experimental device designed to study the dynamics of electric arcs in the DC regime. The work presented here investigates the relationship between electrical fluctuations and material ejection from the electrode surface. Cross-analysis of the electrical and imaging data reveals a significant correlation between electrical fluctuations in the kHz range and particle emission from the electrode surface. Different types of ejection are presented and a study of the dynamics of the ejected particles is carried out through the analysis of a statistically significant number of trajectories.
{"title":"Dynamics of the material ejection in a dipolar arc in continuous regime","authors":"Arthur Hellé, R. Hugon, F. Brochard, Sarah Chouchene, G. Marcos, Jérôme Moritz, Patrick Schweitzer","doi":"10.1088/1361-6463/ad6274","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6274","url":null,"abstract":"\u0000 Electrical and fast imaging measurements are performed on an experimental device designed to study the dynamics of electric arcs in the DC regime. The work presented here investigates the relationship between electrical fluctuations and material ejection from the electrode surface. Cross-analysis of the electrical and imaging data reveals a significant correlation between electrical fluctuations in the kHz range and particle emission from the electrode surface. Different types of ejection are presented and a study of the dynamics of the ejected particles is carried out through the analysis of a statistically significant number of trajectories.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141652394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-12DOI: 10.1088/1361-6463/ad626a
Chao Yuan, Bingxu Jiang, Yujie Zhu, Tan Zeng, Dong-Duan Liu, Chengxu Tang, Qiao Li, Qi Li, Jinliang He
Polymers have been extensively used for high voltage direct current transmission systems as insulation power cables. Space charge accumulation consistently remains the primary factor contributing to the degradation of the electrical insulation properties of polymers. Grafting modification is a valid approach for suppressing the injection of space charges and free electrons by inducing deep traps. In this paper, the modified polypropylene grafted the group with low ionization energy is reported. The deep traps are revealed by the thermally stimulated depolarization current experiment and the band structure as well as the electrostatic potential by density functional theory simulation. The method with the innovative hybrid functional and basis set is adopted to establish the average local ionization distribution of the grafting group, thus confirming its strong electrophilicity. Furthermore, the modified polypropylene has been proved to obtain higher breakdown strength and operational stability by experiments. This work can provide insights for the design and selection of power cables with excellent electrical insulation properties.
{"title":"Enhanced Electrical Insulation Properties of 2-isopropenyl-2-oxazoline Grafted Polypropylene for High Voltage Direct Current Power Cables","authors":"Chao Yuan, Bingxu Jiang, Yujie Zhu, Tan Zeng, Dong-Duan Liu, Chengxu Tang, Qiao Li, Qi Li, Jinliang He","doi":"10.1088/1361-6463/ad626a","DOIUrl":"https://doi.org/10.1088/1361-6463/ad626a","url":null,"abstract":"\u0000 Polymers have been extensively used for high voltage direct current transmission systems as insulation power cables. Space charge accumulation consistently remains the primary factor contributing to the degradation of the electrical insulation properties of polymers. Grafting modification is a valid approach for suppressing the injection of space charges and free electrons by inducing deep traps. In this paper, the modified polypropylene grafted the group with low ionization energy is reported. The deep traps are revealed by the thermally stimulated depolarization current experiment and the band structure as well as the electrostatic potential by density functional theory simulation. The method with the innovative hybrid functional and basis set is adopted to establish the average local ionization distribution of the grafting group, thus confirming its strong electrophilicity. Furthermore, the modified polypropylene has been proved to obtain higher breakdown strength and operational stability by experiments. This work can provide insights for the design and selection of power cables with excellent electrical insulation properties.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141655235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Two-dimensional (2D) layered materials have been actively explored for electronic device applications because of their ability to form van der Waals heterostructures with unique electronic properties. Vertical integration of atomically thin 2D materials can enable the design of a three-dimensional (3D) circuit which is a promising pathway to continuously increase device density. In this study, we vertically stack 2D materials, such as graphene（Gr）, MoS2, and black phosphorus (BP) to build transistors, heterostructure p-n diodes, and 3D logic circuits. The vertical transistors built from MoS2 or BP semiconductor exhibit a good on-off ratio of up to 103 and a high current density of ~200 Acm-2 at a very small VDS of 50 mV. The Gr/BP/MoS2 vertical heterostructure p-n diodes show a high gate-tunable rectification ratio of 102. Finally, we have demonstrated a 3D CMOS inverter by vertical integration of Gr, BP (p-channel), Gr, MoS2 (n-channel), and a 50-nm-thick gold film in sequence. The ability to vertically stack 2D layered materials by van der Waals interactions offers an alternative way to design future 3D integrated circuits.
{"title":"Vertically stacked van der Waals heterostructures for three-dimensional circuitry elements","authors":"Jinshui Miao, Yueyue Fang, Yu Jiang, Siyu Long, Yi Dong, Mengyang Kang, Tangxin Li, Jinjin Wang, Xiao Fu, Hui Sun, Hailu Wang","doi":"10.1088/1361-6463/ad626d","DOIUrl":"https://doi.org/10.1088/1361-6463/ad626d","url":null,"abstract":"\u0000 Two-dimensional (2D) layered materials have been actively explored for electronic device applications because of their ability to form van der Waals heterostructures with unique electronic properties. Vertical integration of atomically thin 2D materials can enable the design of a three-dimensional (3D) circuit which is a promising pathway to continuously increase device density. In this study, we vertically stack 2D materials, such as graphene（Gr）, MoS2, and black phosphorus (BP) to build transistors, heterostructure p-n diodes, and 3D logic circuits. The vertical transistors built from MoS2 or BP semiconductor exhibit a good on-off ratio of up to 103 and a high current density of ~200 Acm-2 at a very small VDS of 50 mV. The Gr/BP/MoS2 vertical heterostructure p-n diodes show a high gate-tunable rectification ratio of 102. Finally, we have demonstrated a 3D CMOS inverter by vertical integration of Gr, BP (p-channel), Gr, MoS2 (n-channel), and a 50-nm-thick gold film in sequence. The ability to vertically stack 2D layered materials by van der Waals interactions offers an alternative way to design future 3D integrated circuits.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141653781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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