Pub Date : 2024-07-22DOI: 10.1088/1361-6463/ad6610
B. Du, Ke Chen, Haoliang Liu, M. Xiao
In this paper, a method of significantly increasing the energy density of biaxially oriented polypropylene (BOPP) film by cryogenic environment has been proposed. The notable enhancements in the dielectric and energy storage performance can be attributed to precise microstructure manipulation, aimed at controlling charge injection limitations and optimizing molecular chain dynamics. The experimental results show that the maximum discharged energy density of BOPP film with thicknesses of 3.4 μm has reached 11.83 J/cm3 at -196 °C (2.9 times that at 25 °C) with a charge-discharge efficiency of 92.74%. The DC breakdown strength as high as 1120.4 kV/mm is obtained at -196 °C, exhibiting a substantial 63.7% augmentation compared to the measurement at 25 °C. Furthermore, reductions in conductance loss and capacitance loss (post self-healing testing) are realized. Mechanistic insights into the observed enhancements are investigated through computational simulations. This research provides a pivotal advancement and valuable perspective towards the development of film capacitors boasting the excellent energy storage characteristics.
本文提出了一种在低温环境下显著提高双向拉伸聚丙烯（BOPP）薄膜能量密度的方法。介电性能和储能性能的显著提高归功于精确的微结构操作，其目的是控制电荷注入限制和优化分子链动力学。实验结果表明，厚度为 3.4 μm 的 BOPP 薄膜在 -196 °C 时的最大放电能量密度达到了 11.83 J/cm3（是 25 °C 时的 2.9 倍），充放电特性率为 92.74%。在 -196 °C 时，直流击穿强度高达 1120.4 kV/mm，与 25 °C 时的测量结果相比，大幅提高了 63.7%。此外，还实现了电导损耗和电容损耗的降低（自愈后测试）。通过计算模拟研究了观察到的增强机理。这项研究为开发具有出色储能特性的薄膜电容器提供了重要的进展和宝贵的视角。
{"title":"High Energy Density of Biaxially Oriented Polypropylene Film in Cryogenic Environment for Advanced Capacitor","authors":"B. Du, Ke Chen, Haoliang Liu, M. Xiao","doi":"10.1088/1361-6463/ad6610","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6610","url":null,"abstract":"\u0000 In this paper, a method of significantly increasing the energy density of biaxially oriented polypropylene (BOPP) film by cryogenic environment has been proposed. The notable enhancements in the dielectric and energy storage performance can be attributed to precise microstructure manipulation, aimed at controlling charge injection limitations and optimizing molecular chain dynamics. The experimental results show that the maximum discharged energy density of BOPP film with thicknesses of 3.4 μm has reached 11.83 J/cm3 at -196 °C (2.9 times that at 25 °C) with a charge-discharge efficiency of 92.74%. The DC breakdown strength as high as 1120.4 kV/mm is obtained at -196 °C, exhibiting a substantial 63.7% augmentation compared to the measurement at 25 °C. Furthermore, reductions in conductance loss and capacitance loss (post self-healing testing) are realized. Mechanistic insights into the observed enhancements are investigated through computational simulations. This research provides a pivotal advancement and valuable perspective towards the development of film capacitors boasting the excellent energy storage characteristics.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141817023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-22DOI: 10.1088/1361-6463/ad660f
S. Doyle, Amanda Larson, Guy Rosenzweig, James Gunn, M. Kushner
Remote plasmas are used in semiconductor device manufacturing as sources of radicals for chamber cleaning and isotropic etching. In these applications, large fluxes of neutral radicals (e.g., F, O, Cl, H) are desired with there being negligible fluxes of potentially damaging ions and photons. One remote plasma source (RPS) design employs toroidal, transformer coupling using ferrite cores to dissociate high flows of moderately high pressure (up to several Torr) electronegative gases. In this paper, results are discussed from a computational investigation of moderate pressure, toroidal transformer coupled RPS sustained in Ar and Ar/NF3 mixtures. Operation of the RPS in 1 Torr of argon with a power of 1.0 kW at 0.5 MHz and a single core produces a continuous toroidal plasma loop with current continuity being maintained dominantly by conduction current. Operation with dual cores introduces azimuthal asymmetries with local maxima in plasma density. Current continuity is maintained by a mix of conduction and displacement current. Operation in NF3 for the same conditions produces essentially complete NF3 dissociation. Electron depletion as a result of dissociative attachment of NF3 and NFx fragments significantly alters the discharge topology, confining the electron density to the downstream portion of the source where the NFx density has been lowered by this dissociation.
{"title":"Transformer Coupled Toroidal Wave-Heated Remote Plasma Sources Operating in in Ar/NF3 Mixtures","authors":"S. Doyle, Amanda Larson, Guy Rosenzweig, James Gunn, M. Kushner","doi":"10.1088/1361-6463/ad660f","DOIUrl":"https://doi.org/10.1088/1361-6463/ad660f","url":null,"abstract":"\u0000 Remote plasmas are used in semiconductor device manufacturing as sources of radicals for chamber cleaning and isotropic etching. In these applications, large fluxes of neutral radicals (e.g., F, O, Cl, H) are desired with there being negligible fluxes of potentially damaging ions and photons. One remote plasma source (RPS) design employs toroidal, transformer coupling using ferrite cores to dissociate high flows of moderately high pressure (up to several Torr) electronegative gases. In this paper, results are discussed from a computational investigation of moderate pressure, toroidal transformer coupled RPS sustained in Ar and Ar/NF3 mixtures. Operation of the RPS in 1 Torr of argon with a power of 1.0 kW at 0.5 MHz and a single core produces a continuous toroidal plasma loop with current continuity being maintained dominantly by conduction current. Operation with dual cores introduces azimuthal asymmetries with local maxima in plasma density. Current continuity is maintained by a mix of conduction and displacement current. Operation in NF3 for the same conditions produces essentially complete NF3 dissociation. Electron depletion as a result of dissociative attachment of NF3 and NFx fragments significantly alters the discharge topology, confining the electron density to the downstream portion of the source where the NFx density has been lowered by this dissociation.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141816986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-19DOI: 10.1088/1361-6463/ad6576
Rongshan Wang, Limin Zhang, Weilin Jiang, N. Daghbouj, T. Polcar, Ahsan Ejaz, Zhiqiang Wang, Liang Chen, Tieshan Wang
First-principles calculations are used to investigate the effects of stacking faults (SFs) on helium trapping and diffusion in cubic silicon carbon (3C-SiC). Both extrinsic and intrinsic SFs in 3C-SiC create a hexagonal stacking sequence. The hexagonal structure is found to be a strong sink of a helium interstitial. Compared to perfect 3C-SiC, the energy barriers for helium migration near the SFs increase significantly, leading to predominant helium diffusion between the SFs in two dimensions. This facilitates the migration of helium towards interface traps, as confirmed by previous experimental reports on the nanocrystalline 3C-SiC containing a high density of SFs. This study also reveals that the formation of helium interstitial clusters near the SFs is not energetically favored. The findings from this study enhance our comprehension of helium behavior in faulted 3C-SiC, offering valuable insights for the design of helium-tolerant SiC materials intended for reactor applications.
{"title":"Ab initio study of helium behavior near stacking faults in 3C-SiC","authors":"Rongshan Wang, Limin Zhang, Weilin Jiang, N. Daghbouj, T. Polcar, Ahsan Ejaz, Zhiqiang Wang, Liang Chen, Tieshan Wang","doi":"10.1088/1361-6463/ad6576","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6576","url":null,"abstract":"\u0000 First-principles calculations are used to investigate the effects of stacking faults (SFs) on helium trapping and diffusion in cubic silicon carbon (3C-SiC). Both extrinsic and intrinsic SFs in 3C-SiC create a hexagonal stacking sequence. The hexagonal structure is found to be a strong sink of a helium interstitial. Compared to perfect 3C-SiC, the energy barriers for helium migration near the SFs increase significantly, leading to predominant helium diffusion between the SFs in two dimensions. This facilitates the migration of helium towards interface traps, as confirmed by previous experimental reports on the nanocrystalline 3C-SiC containing a high density of SFs. This study also reveals that the formation of helium interstitial clusters near the SFs is not energetically favored. The findings from this study enhance our comprehension of helium behavior in faulted 3C-SiC, offering valuable insights for the design of helium-tolerant SiC materials intended for reactor applications.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141824213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-19DOI: 10.1088/1361-6463/ad6575
A. Schulman, H. Huhtinen, P. Paturi
Manganite-based memristive devices have emerged as promising candidates for next-generation non-volatile memory and neuromorphic computing applications, owing to their unique resistive switching behavior and tunable electronic properties. This review explores recent innovations in manganite-based memristive devices, with a focus on materials engineering, device architectures, and fabrication techniques. We delve into the underlying mechanisms governing resistive switching in manganite thin films, elucidating the intricate interplay of oxygen vacancies, charge carriers, and structural modifications. This review underscores breakthroughs in harnessing manganite memristors for a range of applications, from high-density memory storage to neuromorphic computing platforms that mimic synaptic and neuronal functionalities. Additionally, we discuss the role of characterization techniques and the need for a unified benchmark for these devices. We provide insights into the challenges and opportunities associated with the co-integration of manganite-based memristive devices with more mature technologies, offering a roadmap for future research directions.
{"title":"Manganite Memristive Devices: Recent Progress and Emerging Opportunities","authors":"A. Schulman, H. Huhtinen, P. Paturi","doi":"10.1088/1361-6463/ad6575","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6575","url":null,"abstract":"\u0000 Manganite-based memristive devices have emerged as promising candidates for next-generation non-volatile memory and neuromorphic computing applications, owing to their unique resistive switching behavior and tunable electronic properties. This review explores recent innovations in manganite-based memristive devices, with a focus on materials engineering, device architectures, and fabrication techniques. We delve into the underlying mechanisms governing resistive switching in manganite thin films, elucidating the intricate interplay of oxygen vacancies, charge carriers, and structural modifications. This review underscores breakthroughs in harnessing manganite memristors for a range of applications, from high-density memory storage to neuromorphic computing platforms that mimic synaptic and neuronal functionalities. Additionally, we discuss the role of characterization techniques and the need for a unified benchmark for these devices. We provide insights into the challenges and opportunities associated with the co-integration of manganite-based memristive devices with more mature technologies, offering a roadmap for future research directions.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141823836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-19DOI: 10.1088/1361-6463/ad6577
R. Färber, O. Šefl, Christian M. Franck
A pressure scaling law for the partial discharge inception voltage (PDIV) of wedge-shaped, dielectric-bounded gas gaps is derived and experimentally validated. The investigated prototypical electrode geometry is of relevance in a number of practical applications, such as contacting enamelled wires in electric motors or transformers. The derived pressure scaling law is of particular interest for electric propulsion in aviation systems. The results show that the PDIV can be accurately parametrized from first principles as a function of the scaling parameter p·s/εr, where p is the gas pressure, s is the thickness of the insulating coating and εr its relative dielectric permittivity. Previously published empirical relationships between the PDIV and pressure are shown to be local approximations of the presented general scaling law. In particular, the often assumed linear relation of PDIV with pressure is shown to not be generally valid.
{"title":"Pressure scaling laws for partial discharges in wedge-shaped, dielectric-bounded gas gaps","authors":"R. Färber, O. Šefl, Christian M. Franck","doi":"10.1088/1361-6463/ad6577","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6577","url":null,"abstract":"\u0000 A pressure scaling law for the partial discharge inception voltage (PDIV) of wedge-shaped, dielectric-bounded gas gaps is derived and experimentally validated. The investigated prototypical electrode geometry is of relevance in a number of practical applications, such as contacting enamelled wires in electric motors or transformers. The derived pressure scaling law is of particular interest for electric propulsion in aviation systems. The results show that the PDIV can be accurately parametrized from first principles as a function of the scaling parameter p·s/εr, where p is the gas pressure, s is the thickness of the insulating coating and εr its relative dielectric permittivity. Previously published empirical relationships between the PDIV and pressure are shown to be local approximations of the presented general scaling law. In particular, the often assumed linear relation of PDIV with pressure is shown to not be generally valid.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141823300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-17DOI: 10.1088/1361-6463/ad6454
Muhammad Irfan Sadiq, Muhammad Zahid, Chenxing Jin, Xiaofang Shi, Wanrong Liu, Yunchao Xu, Muhammad Tahir, Fawad Aslam, Jun-liang Yang, Jia Sun
The development of artificial optoelectronic synapses utilizing flexible, and transparent oxide transistors is crucial for advancing neuromorphic computing and wearable electronics. Here, we propose artificial optoelectronic synapses on flexible and transparent devices based on an ion-gel gated oxide transistor. The device consists of indium-tin-oxide (ITO)/ion-gel thin film conformity fabricated on a Polyethylene terephthalate (PET) substrate. The device exhibited a loop opening in current-voltage properties, and its operating mechanism was ascribed to charge trapping and de-trapping. The neuromorphic behaviours can also be simulated by this device for instance, namely Ultraviolet (UV) induced short-term memory (STM), long-term memory (LTM), paired-pulse facilitation (PPF), and learning/forgetting behaviors. Additionally, electrical habituation and UV potentiation were executed. This work paves the way for the realization of low-cost flexible and transparent synaptic wearable electronics.
{"title":"Artificial optoelectronic synapses based on flexible and transparent oxide transistors","authors":"Muhammad Irfan Sadiq, Muhammad Zahid, Chenxing Jin, Xiaofang Shi, Wanrong Liu, Yunchao Xu, Muhammad Tahir, Fawad Aslam, Jun-liang Yang, Jia Sun","doi":"10.1088/1361-6463/ad6454","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6454","url":null,"abstract":"\u0000 The development of artificial optoelectronic synapses utilizing flexible, and transparent oxide transistors is crucial for advancing neuromorphic computing and wearable electronics. Here, we propose artificial optoelectronic synapses on flexible and transparent devices based on an ion-gel gated oxide transistor. The device consists of indium-tin-oxide (ITO)/ion-gel thin film conformity fabricated on a Polyethylene terephthalate (PET) substrate. The device exhibited a loop opening in current-voltage properties, and its operating mechanism was ascribed to charge trapping and de-trapping. The neuromorphic behaviours can also be simulated by this device for instance, namely Ultraviolet (UV) induced short-term memory (STM), long-term memory (LTM), paired-pulse facilitation (PPF), and learning/forgetting behaviors. Additionally, electrical habituation and UV potentiation were executed. This work paves the way for the realization of low-cost flexible and transparent synaptic wearable electronics.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141828998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-16DOI: 10.1088/1361-6463/ad5f3e
Bhumit Luhar, D. Thakur, B. R. Naik, V. Balakrishnan
Two-dimensional transition metal dichalcogenides (2D-TMDs), such as WS2 and MoS2, have attracted exceptional attention as promising materials for future optoelectronic systems due to their unique properties, including a direct band gap, high quantum efficiency, and flexibility. However, exploiting these materials’ potential in their pristine state remains a key challenge because of limited tunability and control over their properties. The introduction of crystal defects, such as vacancies and dopants, induces localized mid-gap states in 2D materials, enhances electrical transport, and creates a platform for tuning and exploiting these materials for practical applications. Our study explores the effect of Ar-ion beam irradiation on monolayer WS2, resulting in enhanced electrical transport compared to the pristine sample. We regulated the Ar-ion bombardment energy to vary the defect concentration from 0.1 to 0.5 keV. Photoluminescence (PL) and Raman investigations, revealed the extent of damage to the material. At the same time, x-ray photoelectron spectroscopy showed changes in the oxidation state with increasing irradiation energy. Our results demonstrated that Ar-ion treatment at low-energy irradiation enhanced electrical transport by ∼12 fold compared to pristine till 0.2 keV of irradiation by incorporating defects. However, higher irradiation energies reduced electrical transport due to increased disorder in the WS2 monolayer. This investigation highlights the potential for controlled defect engineering to optimize the properties of 2D-TMDs for practical applications.
{"title":"Effect of Ar-ion irradiation on electrical transport of WS2 monolayer","authors":"Bhumit Luhar, D. Thakur, B. R. Naik, V. Balakrishnan","doi":"10.1088/1361-6463/ad5f3e","DOIUrl":"https://doi.org/10.1088/1361-6463/ad5f3e","url":null,"abstract":"\u0000 Two-dimensional transition metal dichalcogenides (2D-TMDs), such as WS2 and MoS2, have attracted exceptional attention as promising materials for future optoelectronic systems due to their unique properties, including a direct band gap, high quantum efficiency, and flexibility. However, exploiting these materials’ potential in their pristine state remains a key challenge because of limited tunability and control over their properties. The introduction of crystal defects, such as vacancies and dopants, induces localized mid-gap states in 2D materials, enhances electrical transport, and creates a platform for tuning and exploiting these materials for practical applications. Our study explores the effect of Ar-ion beam irradiation on monolayer WS2, resulting in enhanced electrical transport compared to the pristine sample. We regulated the Ar-ion bombardment energy to vary the defect concentration from 0.1 to 0.5 keV. Photoluminescence (PL) and Raman investigations, revealed the extent of damage to the material. At the same time, x-ray photoelectron spectroscopy showed changes in the oxidation state with increasing irradiation energy. Our results demonstrated that Ar-ion treatment at low-energy irradiation enhanced electrical transport by ∼12 fold compared to pristine till 0.2 keV of irradiation by incorporating defects. However, higher irradiation energies reduced electrical transport due to increased disorder in the WS2 monolayer. This investigation highlights the potential for controlled defect engineering to optimize the properties of 2D-TMDs for practical applications.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141640488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-15DOI: 10.1088/1361-6463/ad6331
Shukai Wang, Kai Shi, Jie Li, Juan Lyu, Fengyu Li
First-principles calculations were carried out to investigate the stability of two dimensional (2D) MB2 monolayers (TiB2-I, VB2-I, MnB2-I, TiB2-II, ScB2-II, NiB2-II) with an inverse sandwich configuration and their potential as efficient gas sensors to detect toxic gas molecules. We first identified five stable 2D MB2 configurations, based on stability evaluation covering thermodynamical, dynamical, and thermal aspects. To investigate the performance of these novel structures as gas sensors, the adsorption behavior of five toxic gas molecules (CO, NO, NO2, NH3, SO2) on MB2 has been explored, and the charge transfer and magnetic changes of these adsorption systems were analyzed. It is found that five gases are all chemisorbed on 2D MB2. Particularly, when CO is adsorbed on TiB2-II, the magnetism of the system undergoes a significant change from non-magnetism to antiferromagnetism, showing selectivity for CO. Furthermore, the current−voltage characteristics obtained from simulations confirm gas sensing performance. The TiB2-II is expected to be a candidate material for CO gas sensor with short recovery time (7.50 ×10−10 s). Our theoretical study provides new ideas for designing gas sensor nanomaterials with magnetism alteration as the indicator featuring easy measurement and fast response.
{"title":"First-principles explorations on 2D transition metal diborides featuring inverse sandwich structures and their gas sensing properties","authors":"Shukai Wang, Kai Shi, Jie Li, Juan Lyu, Fengyu Li","doi":"10.1088/1361-6463/ad6331","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6331","url":null,"abstract":"\u0000 First-principles calculations were carried out to investigate the stability of two dimensional (2D) MB2 monolayers (TiB2-I, VB2-I, MnB2-I, TiB2-II, ScB2-II, NiB2-II) with an inverse sandwich configuration and their potential as efficient gas sensors to detect toxic gas molecules. We first identified five stable 2D MB2 configurations, based on stability evaluation covering thermodynamical, dynamical, and thermal aspects. To investigate the performance of these novel structures as gas sensors, the adsorption behavior of five toxic gas molecules (CO, NO, NO2, NH3, SO2) on MB2 has been explored, and the charge transfer and magnetic changes of these adsorption systems were analyzed. It is found that five gases are all chemisorbed on 2D MB2. Particularly, when CO is adsorbed on TiB2-II, the magnetism of the system undergoes a significant change from non-magnetism to antiferromagnetism, showing selectivity for CO. Furthermore, the current−voltage characteristics obtained from simulations confirm gas sensing performance. The TiB2-II is expected to be a candidate material for CO gas sensor with short recovery time (7.50 ×10−10 s). Our theoretical study provides new ideas for designing gas sensor nanomaterials with magnetism alteration as the indicator featuring easy measurement and fast response.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141646128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mixed lead-tin halide perovskites, as highly sensitive materials in the near-infrared region, hold significant potential for optoelectronic device applications. Here, mixed lead-tin halide perovskite saturable absorbers (SAs) have been developed by coupling with the side-polished surfaces of the single-mode fibers and excellent saturable absorption effects of the mixed lead-tin halide perovskite SAs have been demonstrated in the near-infrared region. By constructing the in-gap site assisted carrier transfer mode, the saturation absorption process of the mixed lead-tin halide perovskite SAs can be well explained, in which defects as in-gap sites can help the photon-generated carriers transfer into the conduction band and promote the Pauli-blocking-induced absorption bleaching in the SA. Moreover, ytterbium-doped fiber lasers based on perovskite SAs have been fabricated, and mode-locked operations at 1040 nm are achieved using the mixed lead-tin halide perovskite SA, generating ultra-short pulses with a pulse width of 683 fs, 3dB bandwidth of 4.88 nm, signal-to-noise ratio exceeding 49.74 dB, and a repetition rate of 3.74 MHz. Our findings demonstrate that the mixed lead-tin halide perovskite SAs have excellent optical modulation capability and promising applications in the field of ultrafast photonics.
混合卤化铅锡包晶石作为近红外区域的高灵敏材料，在光电器件应用方面具有巨大潜力。在这里，通过与单模光纤的侧面抛光表面耦合，开发出了混合卤化铅锡包晶石可饱和吸收体（SA），并在近红外区域展示了混合卤化铅锡包晶石 SA 的优异可饱和吸收效果。通过构建隙内位点辅助载流子转移模式，可以很好地解释混合卤化铅锡包晶石 SA 的饱和吸收过程，其中作为隙内位点的缺陷可以帮助光子产生的载流子转移到导带，并促进 PA 中保利封堵诱导的吸收漂白。此外，我们还制作了基于包晶SA的掺镱光纤激光器，并利用混合卤化铅锡包晶SA实现了1040 nm波长的锁模操作，产生了脉冲宽度为683 fs、3dB带宽为4.88 nm、信噪比超过49.74 dB、重复频率为3.74 MHz的超短脉冲。我们的研究结果表明，混合卤化铅锡包晶石 SA 具有出色的光调制能力，在超快光子学领域具有广阔的应用前景。
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Pub Date : 2024-07-15DOI: 10.1088/1361-6463/ad632b
Shaohai Chen, Dennis J. X. Lin, B. C. Lim, Pin Ho
Antiferromagnets and altermagnets, with robustness, scalability and topological properties, emerge as promising contenders for next-generation spintronics, quantum and terahertz communication applications. Recent strides in Mn-based noncollinear antiferromagnetic (AF) and altermagnetic (AL) material platforms showcase remarkable progress and fascinating discoveries, such as in spin-orbit and tunnelling phenomena, affirming the viability of antiferromagnet and altermagnet-centric spintronic devices. This review explores the latest advancements in noncollinear Mn3X (X = Pt, Ir, Sn, Ga, Ge) AF and MnY (Y = F2, O2, Si0.6, Te) AL materials, wherein the quintessential phenomena originate from their intricate crystal structures. For the former, the article delves into their growth techniques, physical properties, as well as advancements in the electrical manipulation of AF order and multimodal electrical, optical, and thermal detection. For the latter, the review encapsulates theoretical understanding and experimental demonstration of AL materials and device physics pertinent to promising applications. This serves to direct efforts towards the imminent realization of AF and AL active elements in replacement of conventional ferromagnetic materials in spintronic devices.
反铁磁体和变磁体具有稳健性、可扩展性和拓扑特性，有望成为下一代自旋电子学、量子和太赫兹通信应用的竞争者。锰基非共轭反铁磁性（AF）和改磁性（AL）材料平台的最新进展展示了自旋轨道和隧穿现象等方面的显著进步和引人入胜的发现，肯定了以反铁磁性和改磁性为中心的自旋电子器件的可行性。这篇综述探讨了非共轭 Mn3X（X = Pt、Ir、Sn、Ga、Ge）AF 和 MnY（Y = F2、O2、Si0.6、Te）AL 材料的最新进展，其中最重要的现象源于它们错综复杂的晶体结构。对于前者，文章深入探讨了它们的生长技术、物理性质，以及在原子态有序的电操纵和多模式电、光、热检测方面取得的进展。对于后者，文章概述了对 AL 材料的理论理解和实验证明，以及与前景广阔的应用相关的器件物理学。这有助于引导人们努力实现即将在自旋电子器件中取代传统铁磁材料的 AF 和 AL 有源元件。
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