Pub Date : 2024-03-29DOI: 10.15330/pcss.25.1.170-177
N. Danyliuk, I. Lapchuk, V. Husak
Recently, there has been a rapid growth in the use of nanoparticles in water treatment processes. However, an important task is to study the toxicity of the materials used and the reaction products formed. The purpose of this study was to evaluate the impact of the proposed water treatment method on the ecosystem. Algae are excellent model organisms for studying the toxic effects of catalyst nanoparticles. This work investigates the toxicity of cobalt ferrite (CoFe2O4) and hydrogen peroxide (H2O2) on the microalgae Chlorella vulgaris Beij. (C. vulgaris). The growth rate of C. vulgaris depends on the residual concentration of H2O2, indicating a stressful physiological state of the microalgae. Exposure to sintered cobalt ferrite granules does not affect the growth of freshwater algae. At a residual H2O2 concentration of 11.9 mM, algal cells' morphology, membrane integrity, and viability were severely impaired. Hydrogen peroxide is known to cause oxidative stress, as evidenced by a decrease in the growth rate of C. vulgaris and an increase in the number of dead cells. The study showed that the high residual concentration of H2O2 is the main obstacle to the discharge of treated water into the natural ecosystem.
{"title":"Toxicity of water treated with Fenton-like ferrite catalyst","authors":"N. Danyliuk, I. Lapchuk, V. Husak","doi":"10.15330/pcss.25.1.170-177","DOIUrl":"https://doi.org/10.15330/pcss.25.1.170-177","url":null,"abstract":"Recently, there has been a rapid growth in the use of nanoparticles in water treatment processes. However, an important task is to study the toxicity of the materials used and the reaction products formed. The purpose of this study was to evaluate the impact of the proposed water treatment method on the ecosystem. Algae are excellent model organisms for studying the toxic effects of catalyst nanoparticles. This work investigates the toxicity of cobalt ferrite (CoFe2O4) and hydrogen peroxide (H2O2) on the microalgae Chlorella vulgaris Beij. (C. vulgaris). The growth rate of C. vulgaris depends on the residual concentration of H2O2, indicating a stressful physiological state of the microalgae. Exposure to sintered cobalt ferrite granules does not affect the growth of freshwater algae. At a residual H2O2 concentration of 11.9 mM, algal cells' morphology, membrane integrity, and viability were severely impaired. Hydrogen peroxide is known to cause oxidative stress, as evidenced by a decrease in the growth rate of C. vulgaris and an increase in the number of dead cells. The study showed that the high residual concentration of H2O2 is the main obstacle to the discharge of treated water into the natural ecosystem.","PeriodicalId":509433,"journal":{"name":"Physics and Chemistry of Solid State","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140368945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-27DOI: 10.15330/pcss.25.1.212-216
I. Budzuliak, L. Yablon, V. Kotsyubynsky, B. Rachii, I.I. Budzuliak, V. Boychuk, R. Ilnytskyi, R. Kryvulych
Electrochemical double-layer capacitors use porous carbons as the electrode material, and improving their performance requires an understanding of the electrolyte−carbon surface interactions. 13C, 14N, and 11B NMR spectroscopy were used to investigate the behaviour of the electrolytes [C(OCH3)3NH3]+Cl- and [N(CH2CH3)]+BF4- on the surface of porous carbon in D2O solutions. A chemical shift of 13C has been found in the fragments N–C, indicating electron density redistribution between nitrogen atoms and alkyl fragments. The presence of a signal with a chemical shift of d = 7.7 confirms the structuring of the electrolytic layer of water solution [N(CH2CH3)]+BF4-.
{"title":"Interaction of electrolyte molecules with the surface of porous carbon: NMR study","authors":"I. Budzuliak, L. Yablon, V. Kotsyubynsky, B. Rachii, I.I. Budzuliak, V. Boychuk, R. Ilnytskyi, R. Kryvulych","doi":"10.15330/pcss.25.1.212-216","DOIUrl":"https://doi.org/10.15330/pcss.25.1.212-216","url":null,"abstract":"Electrochemical double-layer capacitors use porous carbons as the electrode material, and improving their performance requires an understanding of the electrolyte−carbon surface interactions. 13C, 14N, and 11B NMR spectroscopy were used to investigate the behaviour of the electrolytes [C(OCH3)3NH3]+Cl- and [N(CH2CH3)]+BF4- on the surface of porous carbon in D2O solutions. A chemical shift of 13C has been found in the fragments N–C, indicating electron density redistribution between nitrogen atoms and alkyl fragments. The presence of a signal with a chemical shift of d = 7.7 confirms the structuring of the electrolytic layer of water solution [N(CH2CH3)]+BF4-.","PeriodicalId":509433,"journal":{"name":"Physics and Chemistry of Solid State","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140376369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-19DOI: 10.15330/pcss.25.1.185-190
О.М. Matkivskyi, V. Balan, М.О. Halushchak, І.B. Dadiak, G. D. Mateik, І.V. Horichok
The paper calculates the electronic and lattice components of thermal conductivity coefficients for GeBiTe solid solutions. The calculation was carried out using two different models of the band structure of GeTe, which differ in the relative location of the zones of heavy and light holes. The first of the models is generally accepted for A4B6 compounds and assumes the location of the zone of light holes above the zone of heavy ones in the energy spectrum. Another model, obtained on the basis of DFT calculation, predicts the location of the zone of light holes below the zone of heavy ones. A significant difference was established in the numerical values of the electronic and lattice components of the thermal conductivity coefficients, depending on the adopted model. The influence of other calculation parameters on the investigated values was analyzed.
{"title":"Теплопровідність твердих розчинів GeBiTe","authors":"О.М. Matkivskyi, V. Balan, М.О. Halushchak, І.B. Dadiak, G. D. Mateik, І.V. Horichok","doi":"10.15330/pcss.25.1.185-190","DOIUrl":"https://doi.org/10.15330/pcss.25.1.185-190","url":null,"abstract":"The paper calculates the electronic and lattice components of thermal conductivity coefficients for GeBiTe solid solutions. The calculation was carried out using two different models of the band structure of GeTe, which differ in the relative location of the zones of heavy and light holes. The first of the models is generally accepted for A4B6 compounds and assumes the location of the zone of light holes above the zone of heavy ones in the energy spectrum. Another model, obtained on the basis of DFT calculation, predicts the location of the zone of light holes below the zone of heavy ones. A significant difference was established in the numerical values of the electronic and lattice components of the thermal conductivity coefficients, depending on the adopted model. The influence of other calculation parameters on the investigated values was analyzed.","PeriodicalId":509433,"journal":{"name":"Physics and Chemistry of Solid State","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140389448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-07DOI: 10.15330/pcss.25.1.164-169
V. M. Rubish, M. M. Pop, R.P. Pisak, L. Makar, M. Durkot, A.M. Solomon, O.O. Spesyvykh, V. Boryk, R. Dzumedzey
The structure of mercury-modified amorphous films of the Se-Sb system was studied using the methods of X-ray diffractometry and Raman spectroscopy. It was ascertained that the structure of the phase that formed in the amorphous matrix of the films after their exposure in mercury vapor corresponds to the structure of crystalline mercury selenide in cubic modification. The structure of nominally pure and mercury-modified amorphous Se100Sbx films (x = 3, 5, 7, 9) was investigated using X-ray diffractometry and Raman spectroscopy. It is shown that the matrix of nominally pure films is built mainly by elements of Se8 rings and Sen helical chains and contains a certain number of SbSe3/2 structural groups. Exposure of the films in mercury vapor leads to formation of mercury selenide (HgSe) crystalline inclusions in the cubic modification in their near-surface layers, as well as to the activation of the process of formation and growth of Se crystalline inclusions of the trigonal modification in the film bulk.
利用 X 射线衍射仪和拉曼光谱法研究了硒化锑体系汞改性无定形薄膜的结构。结果表明，薄膜在汞蒸气中暴露后在无定形基质中形成的相的结构与立方改性结晶硒化汞的结构一致。利用 X 射线衍射仪和拉曼光谱研究了名义纯的和汞修饰的 Se100Sbx（x = 3、5、7、9）无定形薄膜的结构。结果表明，标称纯薄膜的基体主要由 Se8 环和 Sen 螺旋链元素构成，并含有一定数量的 SbSe3/2 结构基团。将薄膜暴露在汞蒸气中会在其近表面层形成立方修饰的硒化汞（HgSe）晶体夹杂物，并激活薄膜主体中三方修饰的硒晶体夹杂物的形成和生长过程。
{"title":"Structural Studies of Mercury-Modified Amorphous Films of the Selenium-Antimony System","authors":"V. M. Rubish, M. M. Pop, R.P. Pisak, L. Makar, M. Durkot, A.M. Solomon, O.O. Spesyvykh, V. Boryk, R. Dzumedzey","doi":"10.15330/pcss.25.1.164-169","DOIUrl":"https://doi.org/10.15330/pcss.25.1.164-169","url":null,"abstract":"The structure of mercury-modified amorphous films of the Se-Sb system was studied using the methods of X-ray diffractometry and Raman spectroscopy. It was ascertained that the structure of the phase that formed in the amorphous matrix of the films after their exposure in mercury vapor corresponds to the structure of crystalline mercury selenide in cubic modification. \u0000The structure of nominally pure and mercury-modified amorphous Se100Sbx films (x = 3, 5, 7, 9) was investigated using X-ray diffractometry and Raman spectroscopy. It is shown that the matrix of nominally pure films is built mainly by elements of Se8 rings and Sen helical chains and contains a certain number of SbSe3/2 structural groups. Exposure of the films in mercury vapor leads to formation of mercury selenide (HgSe) crystalline inclusions in the cubic modification in their near-surface layers, as well as to the activation of the process of formation and growth of Se crystalline inclusions of the trigonal modification in the film bulk.","PeriodicalId":509433,"journal":{"name":"Physics and Chemistry of Solid State","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140397435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-02-29DOI: 10.15330/pcss.25.1.85-90
O. Bordun, B. Bordun, I. Medvid, I. Kukharskyy, D.M. Maksymchuk, I. M. Kofliuk
The dispersion of the refractive index of (La0.06Ga0.94)2O3:Eu thin films obtained by radio-frequency ion-plasma sputtering has been studied. It was found that the films have a polycrystalline structure corresponding to the monoclinic structure of β- Ga2O3. It is shown that the freshly deposited films are characterised by an abnormal dispersion, and after annealing in argon, a normal dispersion of the refractive index is observed. It was found that at normal dispersion, the spectral dependence of the refractive index in the visible region of the spectrum is mainly determined by electronic transitions from the 2p-state oxygen band, which form the upper filled level of the valence band to the bottom of the conduction band formed by hybridised 2p-states of oxygen and 4s-states of gallium. Two single-oscillator approximation models were analysed and compared for the films annealed in argon, and the approximation parameters, dispersion energy, degree of chemical bond ionicity, coordination number, and static refractive index were determined.
{"title":"Dispersion properties of (La0.06Ga0.94)2O3:Eu thin films","authors":"O. Bordun, B. Bordun, I. Medvid, I. Kukharskyy, D.M. Maksymchuk, I. M. Kofliuk","doi":"10.15330/pcss.25.1.85-90","DOIUrl":"https://doi.org/10.15330/pcss.25.1.85-90","url":null,"abstract":"The dispersion of the refractive index of (La0.06Ga0.94)2O3:Eu thin films obtained by radio-frequency ion-plasma sputtering has been studied. It was found that the films have a polycrystalline structure corresponding to the monoclinic structure of β- Ga2O3. It is shown that the freshly deposited films are characterised by an abnormal dispersion, and after annealing in argon, a normal dispersion of the refractive index is observed. It was found that at normal dispersion, the spectral dependence of the refractive index in the visible region of the spectrum is mainly determined by electronic transitions from the 2p-state oxygen band, which form the upper filled level of the valence band to the bottom of the conduction band formed by hybridised 2p-states of oxygen and 4s-states of gallium. Two single-oscillator approximation models were analysed and compared for the films annealed in argon, and the approximation parameters, dispersion energy, degree of chemical bond ionicity, coordination number, and static refractive index were determined.","PeriodicalId":509433,"journal":{"name":"Physics and Chemistry of Solid State","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-02-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140416535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-02-29DOI: 10.15330/pcss.25.1.203-211
Z. N. Majeed, S.Y. Darweesh, A. Fadhil, A. A. Aziz
Powder metallurgy is a usable technique with multiple industrial applications. The first reinforcement material (Al2O3) was used at a constant rate 10wt.%, while the second reinforcement material (tungsten carbide (WC) was used at different rates (0,5,10,15,20wt.%), and the base material is (Al). The three powders were ground together for two hours, and then they were poured into the mold. The compaction process was done with a hydraulic press at (5) tons for one minute. The resulting samples had green density, requiring a thermal sintering process in order to increase their durability and hardness. The sintering process was performed at 560°C for only two hours. Then, structural examinations (scanning electron microscope (SEM) and mechanical examinations (Brinell hardness, compressive strength, and wear) were performed on the sintered samples. The results showed that the best reinforcement rate was 20%, and after thermal sintering, the best Brinell hardness was 146.72 HB, with the highest compressive strength of 45.33MPa, while the lowest wear rate was 1.18×10-8g/cm.
{"title":"Покращення властивостей алюмінію шляхом додавання карбіду вольфраму методом порошкової металургії","authors":"Z. N. Majeed, S.Y. Darweesh, A. Fadhil, A. A. Aziz","doi":"10.15330/pcss.25.1.203-211","DOIUrl":"https://doi.org/10.15330/pcss.25.1.203-211","url":null,"abstract":"Powder metallurgy is a usable technique with multiple industrial applications. The first reinforcement material (Al2O3) was used at a constant rate 10wt.%, while the second reinforcement material (tungsten carbide (WC) was used at different rates (0,5,10,15,20wt.%), and the base material is (Al). The three powders were ground together for two hours, and then they were poured into the mold. The compaction process was done with a hydraulic press at (5) tons for one minute. The resulting samples had green density, requiring a thermal sintering process in order to increase their durability and hardness. The sintering process was performed at 560°C for only two hours. Then, structural examinations (scanning electron microscope (SEM) and mechanical examinations (Brinell hardness, compressive strength, and wear) were performed on the sintered samples. The results showed that the best reinforcement rate was 20%, and after thermal sintering, the best Brinell hardness was 146.72 HB, with the highest compressive strength of 45.33MPa, while the lowest wear rate was 1.18×10-8g/cm.","PeriodicalId":509433,"journal":{"name":"Physics and Chemistry of Solid State","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-02-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140414774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-02-29DOI: 10.15330/pcss.25.1.191-202
L. Nyrkova, S. Osadchuk, L. Goncharenko, A. Rybakov, Yuliya Kharchenko
Underground pipelines during operation are affected by mechanical and corrosive factors. The susceptibility of cathodically protected pipe to hydrogen degradation increases, which contributes to stress-corrosion cracking. It is believed that the main factor in pipeline steels degradation is deformation aging, which increases strength and reduces plasticity. Volume microdamages also develop in long-time exploited steels. But in many cases, the base metal and welded joints of long-term operated pipelines retain satisfactory performance. Due to the high value of viscosity and plasticity of the metal in an as-received state, the metal state of long-term operated gas pipelines can be considered satisfactory.
{"title":"Influence of long-term operation on the properties of main gas pipeline steels. A review","authors":"L. Nyrkova, S. Osadchuk, L. Goncharenko, A. Rybakov, Yuliya Kharchenko","doi":"10.15330/pcss.25.1.191-202","DOIUrl":"https://doi.org/10.15330/pcss.25.1.191-202","url":null,"abstract":"Underground pipelines during operation are affected by mechanical and corrosive factors. The susceptibility of cathodically protected pipe to hydrogen degradation increases, which contributes to stress-corrosion cracking. It is believed that the main factor in pipeline steels degradation is deformation aging, which increases strength and reduces plasticity. Volume microdamages also develop in long-time exploited steels. But in many cases, the base metal and welded joints of long-term operated pipelines retain satisfactory performance. Due to the high value of viscosity and plasticity of the metal in an as-received state, the metal state of long-term operated gas pipelines can be considered satisfactory.","PeriodicalId":509433,"journal":{"name":"Physics and Chemistry of Solid State","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-02-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140412668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-02-29DOI: 10.15330/pcss.25.1.91-97
Mohd Amin Mir, Syed M. Hasnain, Samar D. Dernayka
Various chemical process have been utilized to analyze chromium (II) and copper (II) complexes with Benzoin. The fore mentioned complexes were analyzed for elemental analyses, and characterized by infrared, electronic spectra, NMR spectroscopy. The data analysis showed the metal ion formation of 1:1 ligand to metal ratio representing the [Cr (B)] H2O and [Cu (B)] 2H2O ionic complex in which B represents the Benzoin. According to the data analyzed by Infrared spectroscopy, it is through the carbonyl and hydroxyl oxygen’s of the Benzoin that chelation chemistry takes place. The complex structural analysis was elucidated by electronic spectral data analysis and by proton NMR spectroscopy. The complex systems with the metals also showed antimicrobial property against many bacterial strains.
{"title":"Synthesis and Spectral Analysis of Chromium, Copper Complexes of 2-Hydroxy-1, 2-diphenylethan-1","authors":"Mohd Amin Mir, Syed M. Hasnain, Samar D. Dernayka","doi":"10.15330/pcss.25.1.91-97","DOIUrl":"https://doi.org/10.15330/pcss.25.1.91-97","url":null,"abstract":"Various chemical process have been utilized to analyze chromium (II) and copper (II) complexes with Benzoin. The fore mentioned complexes were analyzed for elemental analyses, and characterized by infrared, electronic spectra, NMR spectroscopy. The data analysis showed the metal ion formation of 1:1 ligand to metal ratio representing the [Cr (B)] H2O and [Cu (B)] 2H2O ionic complex in which B represents the Benzoin. According to the data analyzed by Infrared spectroscopy, it is through the carbonyl and hydroxyl oxygen’s of the Benzoin that chelation chemistry takes place. The complex structural analysis was elucidated by electronic spectral data analysis and by proton NMR spectroscopy. The complex systems with the metals also showed antimicrobial property against many bacterial strains. \u0000 ","PeriodicalId":509433,"journal":{"name":"Physics and Chemistry of Solid State","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-02-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140408348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-02-21DOI: 10.15330/pcss.25.1.157-163
Y. Stadnyk, V. Romaka, L. Romaka, A. Horyn, V. Pashkevych
The structural, electrokinetic, and energetic properties of the Ti1-xAlxNiSn semiconductor solid solution, obtained by introducing of Al atoms into the structure of the TiNiSn half-Heusler phase by substituting Ti atoms in the crystallographic position 4a, were studied. It is shown that in the range of concentrations x = 0–0.01, Al atoms mainly replace Ni atoms in the 4c position, generating acceptor states. It was established that at temperatures T = 80–160 K, the ratio of concentrations of ionized acceptor and donor states in n-Ti1-xAlxNiSn, х = 0–0.04, is unchanged, but the concentration of donors is greater. At higher temperatures, T ≥ 250 K, deep donor states that existed in n-TiNiSn as a result of "a priori doping" of the semiconductor are ionized. An additional mechanism for the generation of donor states in n-Ti1-xAlxNiSn when the tetrahedral voids of the structure are partially occupied by Al atoms was revealed. The concentration ratio of the generated donor-acceptor states determines the position of the Fermi level εF and the conductivity mechanisms of n-Ti1-xAlxNiSn. The studied semiconductor solid solution is a promising thermoelectric material.
通过在 TiNiSn 半海斯勒相的结构中引入 Al 原子，取代晶体学位置 4a 上的 Ti 原子，研究了 Ti1-xAlxNiSn 半导体固溶体的结构、电动力学和能量特性。研究表明，在浓度 x = 0-0.01 的范围内，铝原子主要取代 4c 位置上的镍原子，产生受体态。研究证实，在温度 T = 80-160 K 时，n-Ti1-xAlxNiSn 中电离的受体态和供体态的浓度比 х = 0-0.04 不变，但供体的浓度更大。在较高温度（T ≥ 250 K）下，n-TiNiSn 中因 "先验掺杂 "半导体而存在的深供体态被电离。当 n-Ti1-xAlxNiSn 结构中的四面体空隙被铝原子部分占据时，在 n-Ti1-xAlxNiSn 中生成供体态的另一种机制被揭示出来。生成的供体态和受体态的浓度比决定了费米级 εF 的位置和 n-Ti1-xAlxNiSn 的导电机制。所研究的半导体固溶体是一种很有前途的热电材料。
{"title":"Experimental studies of a new thermoelectric material based on semiconductor solid solution Ti1-xAlxNiSn","authors":"Y. Stadnyk, V. Romaka, L. Romaka, A. Horyn, V. Pashkevych","doi":"10.15330/pcss.25.1.157-163","DOIUrl":"https://doi.org/10.15330/pcss.25.1.157-163","url":null,"abstract":"The structural, electrokinetic, and energetic properties of the Ti1-xAlxNiSn semiconductor solid solution, obtained by introducing of Al atoms into the structure of the TiNiSn half-Heusler phase by substituting Ti atoms in the crystallographic position 4a, were studied. It is shown that in the range of concentrations x = 0–0.01, Al atoms mainly replace Ni atoms in the 4c position, generating acceptor states. It was established that at temperatures T = 80–160 K, the ratio of concentrations of ionized acceptor and donor states in n-Ti1-xAlxNiSn, х = 0–0.04, is unchanged, but the concentration of donors is greater. At higher temperatures, T ≥ 250 K, deep donor states that existed in n-TiNiSn as a result of \"a priori doping\" of the semiconductor are ionized. An additional mechanism for the generation of donor states in n-Ti1-xAlxNiSn when the tetrahedral voids of the structure are partially occupied by Al atoms was revealed. The concentration ratio of the generated donor-acceptor states determines the position of the Fermi level εF and the conductivity mechanisms of n-Ti1-xAlxNiSn. The studied semiconductor solid solution is a promising thermoelectric material.","PeriodicalId":509433,"journal":{"name":"Physics and Chemistry of Solid State","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140443440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-02-15DOI: 10.15330/pcss.25.1.73-78
Sameen F. Mohammed, Mahmood A. Mohammed
The current study show the results related to investigating the Compton scattering(Cs) of Indium Antimonite (InSb). 241Am with 59.54 keV Gamm-radiations source Compton spectrometer is employed for the purpose of experimental measurement. The technique of linear combination of atomic orbitals (LCAO) is utilized within the framework of density functional theory (DFT),is used to assess the theoretical values of distributing the electron momentum density. A comparison was then made between the research findings and empirical data. Additionally, calculations employing the ionic model (IO) based on the 5p state of In and the 5p state of Sb atoms reveal that 0. 5 electrons of the state of 5pIn may have been transferred to the 5p state of Sb atoms in order to estimate the charge transfer in indium antimonite (InSb).
{"title":"A study Electronic structure of InSb: Experiment and Theory","authors":"Sameen F. Mohammed, Mahmood A. Mohammed","doi":"10.15330/pcss.25.1.73-78","DOIUrl":"https://doi.org/10.15330/pcss.25.1.73-78","url":null,"abstract":"The current study show the results related to investigating the Compton scattering(Cs) of Indium Antimonite (InSb). 241Am with 59.54 keV Gamm-radiations source Compton spectrometer is employed for the purpose of experimental measurement. The technique of linear combination of atomic orbitals (LCAO) is utilized within the framework of density functional theory (DFT),is used to assess the theoretical values of distributing the electron momentum density. A comparison was then made between the research findings and empirical data. Additionally, calculations employing the ionic model (IO) based on the 5p state of In and the 5p state of Sb atoms reveal that 0. 5 electrons of the state of 5pIn may have been transferred to the 5p state of Sb atoms in order to estimate the charge transfer in indium antimonite (InSb).","PeriodicalId":509433,"journal":{"name":"Physics and Chemistry of Solid State","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139834489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：