Pub Date : 2023-12-01DOI: 10.15407/materials2023.07.002
A. Mikhailov, Ye. Shtefan, O. Mikhailov
The deformation process of powder materials thin-walled bushings manufacture was investigated by computer modeling. Two shape formation bushings schemeswere considered (direct extrusion and radial compaction).A continuum approach was used to create a modeling method. The method is based on rheological models of porous body plastic deformation and the finite element method. The accepted material rheological model allows describing the deformation of both powder and porous blanks. It takes into account the different resistance of these materials in tension and compression. Modeling of the deformation process was carried out in stages, using the method of successive loads. The elastic stresses were determined, the plastic potential was calculated and, if it was necessary, the stresses and material parameters of the model were corrected at each load step. The porosity value is reach maximum in blank and area, that is free from the loads, and the accumulated deformation is reachminimum in direct extrusion. The effect of back pressure leads to a more uniform distribution of these parameters, a decrease in porosity and an increase in the accumulated deformation of the solid phase. During radial compaction of thin-walled bushings, deformation of the material occurs locally. Porosity in the product section increases with increasing radius. Increasing the number of technological transitions with a gradual increase in the forming tool diameter reduces the uneven distribution of residual porosity and its value. However, the unevenness of the porosity distribution over the radius remains. In the process of radial compaction, a burr is formed on the ends of the product. The burr can be reduced by changing the initial shape of the blank. The process of direct extrusion allows obtaining more uniform distribution of residual porosity and accumulated plastic deformation of product material. However, this technological process requires the higher loads application, which leads to less stability of the tool. The radial compaction method (which characterized by local deformation) requires not high loads and allows not powerful equipment using. However, the distribution of residual porosity over the radius of the bushing is uneven. Keywords: plasticity theory, powder materials, computer modeling, finite element method, stress-strain state, porosity distribution.
{"title":"Modeling of manufacturing processes of thin-walled bushings from porous blanks using direct extrusion and radial compaction","authors":"A. Mikhailov, Ye. Shtefan, O. Mikhailov","doi":"10.15407/materials2023.07.002","DOIUrl":"https://doi.org/10.15407/materials2023.07.002","url":null,"abstract":"The deformation process of powder materials thin-walled bushings manufacture was investigated by computer modeling. Two shape formation bushings schemeswere considered (direct extrusion and radial compaction).A continuum approach was used to create a modeling method. The method is based on rheological models of porous body plastic deformation and the finite element method. The accepted material rheological model allows describing the deformation of both powder and porous blanks. It takes into account the different resistance of these materials in tension and compression. Modeling of the deformation process was carried out in stages, using the method of successive loads. The elastic stresses were determined, the plastic potential was calculated and, if it was necessary, the stresses and material parameters of the model were corrected at each load step. The porosity value is reach maximum in blank and area, that is free from the loads, and the accumulated deformation is reachminimum in direct extrusion. The effect of back pressure leads to a more uniform distribution of these parameters, a decrease in porosity and an increase in the accumulated deformation of the solid phase. During radial compaction of thin-walled bushings, deformation of the material occurs locally. Porosity in the product section increases with increasing radius. Increasing the number of technological transitions with a gradual increase in the forming tool diameter reduces the uneven distribution of residual porosity and its value. However, the unevenness of the porosity distribution over the radius remains. In the process of radial compaction, a burr is formed on the ends of the product. The burr can be reduced by changing the initial shape of the blank. The process of direct extrusion allows obtaining more uniform distribution of residual porosity and accumulated plastic deformation of product material. However, this technological process requires the higher loads application, which leads to less stability of the tool. The radial compaction method (which characterized by local deformation) requires not high loads and allows not powerful equipment using. However, the distribution of residual porosity over the radius of the bushing is uneven. Keywords: plasticity theory, powder materials, computer modeling, finite element method, stress-strain state, porosity distribution.","PeriodicalId":509971,"journal":{"name":"Uspihi materialoznavstva","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139195116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-01DOI: 10.15407/materials2023.07.010
M. Grigorenko, E. Chernigovtsev, O. Durov, V. Poluyanska, A. Ievtushenko
Semiconductor oxide materials such as gallium, indium and zinc oxides play an important role in a development and production of a variety of electronic devices. Experimental studies of these materials allow to define, for example energetic or other physical parameters of the devices created and also to improve existing technologies of their production, metallization and joining of electrocontacts by way of brazing which require additional wetting studies. It should be noted that data on wetting of mentioned oxides by metals are practically absent in literature. Thus a detailed experimental study of the interfacial interaction, adhesion and wetting of Ga2O3, In2O3 and ZnO oxide materials with some pure metal melts (Ga, In, Sn, Au,Ge, Ag, Cu) in vacuum was performed by the sessile drop method using photo- and video- fixing including temporal and temperature dependencies of contact angles. It was found that pure metals don't wet powdery pressed specimens of Ga and In oxides in the temperature range studied and vary in a rather narrow range. For ZnO system the significant effect of experiment temperature and hold-up time on the values of contact angles for some metals (Ga, Ge, Sn, Cu) is observed. For example wetting angles for Ga change from above 90 degrees at low temperatures up to 49 and full spreading at 1173⎯1373 K. This effect may be attributed to the activation of chemical reactions, change of oxide stabilities at high temperatures at the interface. Last metals can be used as adhesive-active additions to base brazing alloy. Keywords: gallium, indium, zinc oxides, semiconductor, wetting, contact interaction, metal melt.
镓、铟和锌氧化物等半导体氧化物材料在各种电子设备的开发和生产中发挥着重要作用。通过对这些材料的实验研究，可以确定所制造设备的能量或其他物理参数，还可以改进现有的生产、金属化和通过钎焊连接电接触的技术，这些都需要额外的润湿研究。值得注意的是，文献中几乎没有关于上述氧化物与金属润湿的数据。因此，我们采用无柄液滴法，通过光电和视频固定，包括接触角的时间和温度依赖性，对 Ga2O3、In2O3 和 ZnO 氧化物材料与一些纯金属熔体（Ga、In、Sn、Au、Ge、Ag、Cu）在真空中的界面相互作用、粘附和润湿进行了详细的实验研究。研究发现，在所研究的温度范围内，纯金属不会润湿 Ga 和 In 氧化物的粉末压制试样，而且变化范围相当小。对于氧化锌体系，实验温度和保持时间对某些金属（Ga、Ge、Sn、Cu）的接触角值有显著影响。例如，镓的润湿角从低温下的 90 度以上变为 49 度，在 1173-1373 K 时完全扩散。这种影响可能是由于化学反应的激活、界面高温下氧化物稳定性的变化。最后一种金属可用作基础钎焊合金的粘合活性添加剂。关键词：镓、铟、锌氧化物、半导体、润湿、接触相互作用、金属熔体。
{"title":"Wetting and contact interaction of semconductor oxide materials Ga2O3, In2O3, ZnO with metallic melts in vacuum","authors":"M. Grigorenko, E. Chernigovtsev, O. Durov, V. Poluyanska, A. Ievtushenko","doi":"10.15407/materials2023.07.010","DOIUrl":"https://doi.org/10.15407/materials2023.07.010","url":null,"abstract":"Semiconductor oxide materials such as gallium, indium and zinc oxides play an important role in a development and production of a variety of electronic devices. Experimental studies of these materials allow to define, for example energetic or other physical parameters of the devices created and also to improve existing technologies of their production, metallization and joining of electrocontacts by way of brazing which require additional wetting studies. It should be noted that data on wetting of mentioned oxides by metals are practically absent in literature. Thus a detailed experimental study of the interfacial interaction, adhesion and wetting of Ga2O3, In2O3 and ZnO oxide materials with some pure metal melts (Ga, In, Sn, Au,Ge, Ag, Cu) in vacuum was performed by the sessile drop method using photo- and video- fixing including temporal and temperature dependencies of contact angles. It was found that pure metals don't wet powdery pressed specimens of Ga and In oxides in the temperature range studied and vary in a rather narrow range. For ZnO system the significant effect of experiment temperature and hold-up time on the values of contact angles for some metals (Ga, Ge, Sn, Cu) is observed. For example wetting angles for Ga change from above 90 degrees at low temperatures up to 49 and full spreading at 1173⎯1373 K. This effect may be attributed to the activation of chemical reactions, change of oxide stabilities at high temperatures at the interface. Last metals can be used as adhesive-active additions to base brazing alloy. Keywords: gallium, indium, zinc oxides, semiconductor, wetting, contact interaction, metal melt.","PeriodicalId":509971,"journal":{"name":"Uspihi materialoznavstva","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139190074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：