Pub Date : 2024-04-16DOI: 10.1134/s1063774523601272
E. A. Denisov, V. A. Dmitriev
Abstract
Titanium and zirconium alloys are indispensable structural materials in many technical applications due to their unique mechanical and physicochemical properties. Titanium and zirconium belong to the fourth (“titanium”) group, due to which one would expect them to exhibit a similar character of hydrogen permeability through alloys of these metals. The results of experiments on the hydrogen permeability of these alloys are compared and analyzed. It is revealed that the hydrogen permeation kinetics for both alloys is mainly determined by the low rate of surface processes and phase transformations, occurring as a result of increasing hydrogen concentration. It is shown that the hydrogen permeability method can be used to find the terminal solid solubility of hydrogen in metals.
{"title":"Manifestation of Hydride Phase Transformations in the Hydrogen Permeability of Polycrystalline Titanium and Zirconium","authors":"E. A. Denisov, V. A. Dmitriev","doi":"10.1134/s1063774523601272","DOIUrl":"https://doi.org/10.1134/s1063774523601272","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Titanium and zirconium alloys are indispensable structural materials in many technical applications due to their unique mechanical and physicochemical properties. Titanium and zirconium belong to the fourth (“titanium”) group, due to which one would expect them to exhibit a similar character of hydrogen permeability through alloys of these metals. The results of experiments on the hydrogen permeability of these alloys are compared and analyzed. It is revealed that the hydrogen permeation kinetics for both alloys is mainly determined by the low rate of surface processes and phase transformations, occurring as a result of increasing hydrogen concentration. It is shown that the hydrogen permeability method can be used to find the terminal solid solubility of hydrogen in metals.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140616784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-16DOI: 10.1134/s1063774523601260
N. V. Bazlov, O. F. Vyvenko, N. V. Niyazova, I. M. Kotina, M. V. Trushin, A. S. Bondarenko
Abstract
Aluminum nitride films have been synthesized by reactive magnetron sputtering on n-Si(100) substrates. AlN layers with thicknesses from 2 to 150 nm were obtained to establish a correlation between the structure of the films and their electrical conductivity. Electron microscopy revealed that the amorphous structure of the films passes to nanocrystalline one while moving away from the substrate surface. Films with thicknesses below 20 nm had a high conductivity: up to 10 (Ω cm)–1; with an increase in thickness the conductivity dropped to 10–7 (Ω cm)–1. The high conductivity of thin AlN layers is believed to be due to the high density of the boundaries of grains built-in into amorphous matrix.
{"title":"Structure and Electrical Conductivity of Thin AlN Films on Si","authors":"N. V. Bazlov, O. F. Vyvenko, N. V. Niyazova, I. M. Kotina, M. V. Trushin, A. S. Bondarenko","doi":"10.1134/s1063774523601260","DOIUrl":"https://doi.org/10.1134/s1063774523601260","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Aluminum nitride films have been synthesized by reactive magnetron sputtering on <i>n</i>-Si(100) substrates. AlN layers with thicknesses from 2 to 150 nm were obtained to establish a correlation between the structure of the films and their electrical conductivity. Electron microscopy revealed that the amorphous structure of the films passes to nanocrystalline one while moving away from the substrate surface. Films with thicknesses below 20 nm had a high conductivity: up to 10 (Ω cm)<sup>–1</sup>; with an increase in thickness the conductivity dropped to 10<sup>–7</sup> (Ω cm)<sup>–1</sup>. The high conductivity of thin AlN layers is believed to be due to the high density of the boundaries of grains built-in into amorphous matrix.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140616572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-16DOI: 10.1134/s1063774523601211
A. P. Baraban, V. A. Dmitriev, A. V. Drozd, Yu. V. Petrov, I. E. Gabis, A. A. Selivanov
Abstract
The possibilities of the luminescence method for studying Si–oxide and Si–SiO2–oxide structures have been demonstrated. A model of the electronic structure of Ta2O5 and TiO2 layers is proposed, which explains the shape of the spectral luminescence distribution independent of the excitation way. A comparison of the luminescence spectra of single oxide layers with the spectrum of Si–SiO2–oxide structures made it possible to draw conclusions about the interaction between layers during layered structure formation and estimate the band gap: 4.4 and 3.3 eV for Ta2O5 and TiO2, respectively. The formation of Ta2O5 on the SiO2 surface led to transformation in the SiO2 surface region, manifesting itself in weakening of the luminescence band at 1.9 eV and formation of defects (luminescence centers) in the vicinity of 3 eV. Synthesis of TiO2 on the surface of SiO2 was not accompanied by any changes in the luminescence spectra.
{"title":"Luminescence of Oxide Films Obtained by Atomic Layer Deposition","authors":"A. P. Baraban, V. A. Dmitriev, A. V. Drozd, Yu. V. Petrov, I. E. Gabis, A. A. Selivanov","doi":"10.1134/s1063774523601211","DOIUrl":"https://doi.org/10.1134/s1063774523601211","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The possibilities of the luminescence method for studying Si–oxide and Si–SiO<sub>2</sub>–oxide structures have been demonstrated. A model of the electronic structure of Ta<sub>2</sub>O<sub>5</sub> and TiO<sub>2</sub> layers is proposed, which explains the shape of the spectral luminescence distribution independent of the excitation way. A comparison of the luminescence spectra of single oxide layers with the spectrum of Si–SiO<sub>2</sub>–oxide structures made it possible to draw conclusions about the interaction between layers during layered structure formation and estimate the band gap: 4.4 and 3.3 eV for Ta<sub>2</sub>O<sub>5</sub> and TiO<sub>2</sub>, respectively. The formation of Ta<sub>2</sub>O<sub>5</sub> on the SiO<sub>2</sub> surface led to transformation in the SiO<sub>2</sub> surface region, manifesting itself in weakening of the luminescence band at 1.9 eV and formation of defects (luminescence centers) in the vicinity of 3 eV. Synthesis of TiO<sub>2</sub> on the surface of SiO<sub>2</sub> was not accompanied by any changes in the luminescence spectra.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140616410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-16DOI: 10.1134/s1063774523601338
A. M. Yafyasov, V. B. Bogevolnov, V. Yu. Mikhailovskii
Abstract
The synthesis of submicron particles in the nonequilibrium processes occurring in a capillary electrode–aqueous electrolyte system on noble metal (gold, silver, or platinum) electrodes under the action of microsecond current pulses is reported. The variations in the value and sign of a voltage pulse on the “sacrificial” electrode affect the shape and composition of nanoparticles. Nanostructures of characteristic crystallographic shapes are obtained.
{"title":"The Effect of Self-Assembly of Nanoparticles under a Plasma Discharge in a Capillary Electrode","authors":"A. M. Yafyasov, V. B. Bogevolnov, V. Yu. Mikhailovskii","doi":"10.1134/s1063774523601338","DOIUrl":"https://doi.org/10.1134/s1063774523601338","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The synthesis of submicron particles in the nonequilibrium processes occurring in a capillary electrode–aqueous electrolyte system on noble metal (gold, silver, or platinum) electrodes under the action of microsecond current pulses is reported. The variations in the value and sign of a voltage pulse on the “sacrificial” electrode affect the shape and composition of nanoparticles. Nanostructures of characteristic crystallographic shapes are obtained.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140616574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-16DOI: 10.1134/s1063774523601193
Yu. V. Petrov, O. F. Vyvenko
Abstract
Systems with a focused ion beam, using gas field ion sources, are described. The principles of operation and ways of formation of these sources, in which the effective ionization region is determined by sizes of a single atom, are considered in the historical context. The described systems have a wide range of applications, both in the field of scanning ion microscopy in combination with various analytical methods and in the field of high-resolution modification of electrical, optical, magnetic, and other properties of materials. This modification, based on ion-induced changes in the structure of material, is most pronounced in crystalline semiconductors, superconductors, and magnets.
{"title":"Field Ion Sources for Research and Modification of the Structure of Amorphous and Crystalline Materials","authors":"Yu. V. Petrov, O. F. Vyvenko","doi":"10.1134/s1063774523601193","DOIUrl":"https://doi.org/10.1134/s1063774523601193","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Systems with a focused ion beam, using gas field ion sources, are described. The principles of operation and ways of formation of these sources, in which the effective ionization region is determined by sizes of a single atom, are considered in the historical context. The described systems have a wide range of applications, both in the field of scanning ion microscopy in combination with various analytical methods and in the field of high-resolution modification of electrical, optical, magnetic, and other properties of materials. This modification, based on ion-induced changes in the structure of material, is most pronounced in crystalline semiconductors, superconductors, and magnets.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140616408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-16DOI: 10.1134/s1063774523601259
A. P. Baraban, A. P. Voyt, I. E. Gabis, D. I. Elets, A. A. Levin, D. A. Zaytsev
Abstract
This work is a continuation of the previous study of the synthesis of intermetallic hydride compound Mg2NiH4 in the reaction between a nickel foil and magnesium hydride MgH2 in a hydrogen atmosphere at pressures exceeding the decomposition pressures of both MgH2 and Mg2NiH4. The synthesis was performed at temperatures of 400 and 475°С. With allowance for the results obtained previously at a temperature 450°С, it was found that, after some incubation time, the thickness of grown Mg2NiH4 film depends linearly on time. During incubation, a sublayer of intermetallic compound MgNi2 is synthesized. The set of these data validates the previously proposed synthesis mechanism, where the limiting factor is the diffusion entry of nickel atoms with a constant rate over the MgNi2 sublayer. Based on the analysis of X-ray diffraction (XRD) data, it was concluded that the MgNi2 sublayer thickness is approximately the same for all three synthesis temperatures. The film growth rates were found for all three temperatures using thermal desorption spectroscopy, and the kinetic parameters of the diffusion of nickel atoms in the sublayer of intermetallic compound MgNi2 were determined based on these data.
{"title":"Synthesis of a Thin Metal Hydride Mg2NiH4 Film on a Nickel Substrate","authors":"A. P. Baraban, A. P. Voyt, I. E. Gabis, D. I. Elets, A. A. Levin, D. A. Zaytsev","doi":"10.1134/s1063774523601259","DOIUrl":"https://doi.org/10.1134/s1063774523601259","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>This work is a continuation of the previous study of the synthesis of intermetallic hydride compound Mg<sub>2</sub>NiH<sub>4</sub> in the reaction between a nickel foil and magnesium hydride MgH<sub>2</sub> in a hydrogen atmosphere at pressures exceeding the decomposition pressures of both MgH<sub>2</sub> and Mg<sub>2</sub>NiH<sub>4</sub>. The synthesis was performed at temperatures of 400 and 475°С. With allowance for the results obtained previously at a temperature 450°С, it was found that, after some incubation time, the thickness of grown Mg<sub>2</sub>NiH<sub>4</sub> film depends linearly on time. During incubation, a sublayer of intermetallic compound MgNi<sub>2</sub> is synthesized. The set of these data validates the previously proposed synthesis mechanism, where the limiting factor is the diffusion entry of nickel atoms with a constant rate over the MgNi<sub>2</sub> sublayer. Based on the analysis of X-ray diffraction (XRD) data, it was concluded that the MgNi<sub>2</sub> sublayer thickness is approximately the same for all three synthesis temperatures. The film growth rates were found for all three temperatures using thermal desorption spectroscopy, and the kinetic parameters of the diffusion of nickel atoms in the sublayer of intermetallic compound MgNi<sub>2</sub> were determined based on these data.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140616787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-19DOI: 10.1134/s1063774523601478
D. Yu. Pushcharovsky
Abstract
The most important structure types of nonmetals belonging to the VIII–IV groups and their importance for the development of the ideas about the composition and structure of the deep shells of the Earth and terrestrial-group planets are analyzed. The structural features of gas hydrates and their possible role in geological processes are considered. The structures of inert gases, hydrogen, and astrophysical ices in the Earth and other planets of the Solar system are presented in the light of new data. The modern concepts of the crystal chemistry of carbon polymorphs, genetic types of diamond, the indicator role of inclusions in its crystals, and conditions of its formation in nature and in model experiments are reviewed.
{"title":"Mineralogical Crystallography: III. Simple Nonmetallic Substances","authors":"D. Yu. Pushcharovsky","doi":"10.1134/s1063774523601478","DOIUrl":"https://doi.org/10.1134/s1063774523601478","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The most important structure types of nonmetals belonging to the VIII–IV groups and their importance for the development of the ideas about the composition and structure of the deep shells of the Earth and terrestrial-group planets are analyzed. The structural features of gas hydrates and their possible role in geological processes are considered. The structures of inert gases, hydrogen, and astrophysical ices in the Earth and other planets of the Solar system are presented in the light of new data. The modern concepts of the crystal chemistry of carbon polymorphs, genetic types of diamond, the indicator role of inclusions in its crystals, and conditions of its formation in nature and in model experiments are reviewed.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140204506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-19DOI: 10.1134/s1063774523601545
D. Yu. Pushcharovsky
Abstract
The main structural features of the most important representatives of the sulfate class, which includes 490 mineral species, are considered. Their systematics is based on the analysis of interatomic interactions, including the structures with isolated island complexes, with one-dimensional mixed columns of [SO4] tetrahedra and M-cation octahedra (with the M–O bonds that are the second strongest after S–O), and with mixed layers and frameworks. The relationship between the structural characteristics and compositional features has been analyzed for a number of minerals, and examples of how structural data help to solve problems of genetic and ecological mineralogy are given.
摘要 研究了硫酸盐类（包括 490 种矿物）中最重要的代表矿物的主要结构特征。它们的系统学基于对原子间相互作用的分析，包括孤立岛状复合物结构、[SO4]四面体和 M 阳离子八面体的一维混合柱状结构（M-O 键是仅次于 S-O 的第二强键）以及混合层和框架结构。我们分析了许多矿物的结构特征与成分特征之间的关系，并举例说明了结构数据如何帮助解决遗传和生态矿物学问题。
{"title":"Minerological Crystallography: VIII. Sulfates","authors":"D. Yu. Pushcharovsky","doi":"10.1134/s1063774523601545","DOIUrl":"https://doi.org/10.1134/s1063774523601545","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The main structural features of the most important representatives of the sulfate class, which includes 490 mineral species, are considered. Their systematics is based on the analysis of interatomic interactions, including the structures with isolated island complexes, with one-dimensional mixed columns of [SO<sub>4</sub>] tetrahedra and <i>M</i>-cation octahedra (with the <i>M</i>–O bonds that are the second strongest after S–O), and with mixed layers and frameworks. The relationship between the structural characteristics and compositional features has been analyzed for a number of minerals, and examples of how structural data help to solve problems of genetic and ecological mineralogy are given.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140204497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-02-06DOI: 10.1134/s1063774523600746
E. D. Yakushkin
Abstract
The dielectric hysteresis loops of a uniaxial triglycine sulfate (TGS) ferroelectric have been studied in a wide range of switching field frequencies. The experimental dependence of the coercive field on the switching frequency is compared with the Kolmogorov–Avrami domain switching model and the domain nucleation model. It is shown that both switching models agree reasonably well with the experiment and that the character of switched domain motion changes with a change in the switching field frequency.
{"title":"On the Dielectric Hysteresis Loops of a Uniaxial Ferroelectric","authors":"E. D. Yakushkin","doi":"10.1134/s1063774523600746","DOIUrl":"https://doi.org/10.1134/s1063774523600746","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The dielectric hysteresis loops of a uniaxial triglycine sulfate (TGS) ferroelectric have been studied in a wide range of switching field frequencies. The experimental dependence of the coercive field on the switching frequency is compared with the Kolmogorov–Avrami domain switching model and the domain nucleation model. It is shown that both switching models agree reasonably well with the experiment and that the character of switched domain motion changes with a change in the switching field frequency.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139759726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-02-06DOI: 10.1134/s1063774523600874
E. V. Zabelina, A. A. Mololkin, N. S. Kozlova, V. M. Kasimova, R. R. Fakhrtdinov, V. E. Umylin, A. V. Sosunov
Abstract
The growth system has been upgraded, technological growth parameters have been optimized, and a high-quality crystal has been grown from the LiNb0.95Ta0.05O3 charge. Spectral dependences of the transmittance of a sample cut from this crystal have been measured before and after the transition to the single-domain state in the range of 300–700 nm with allowance for anisotropy and dichroism. Spectral dependences of the absorption coefficient α(λ) and degree of dichroism Δ(λ) have been obtained. The dependences α(λ) contain an absorption band at λ ~ 480 nm, regardless of the light propagation direction. When light propagates perpendicular to the optical axis, absorption bands at λ ~ 560, 608, 620, and 656 nm can additionally be observed. The transition to the single-domain state leads to sample bleaching. The dependences Δ(λ) for the X and Y cuts are characterized by identical extrema, whose positions correspond to the absorption bands in the dependences α(λ); additional extrema manifest themselves at λ ~ 400 and 445 nm. When light propagates along the optical axis, the dependences Δ(λ) are nonzero; they are characterized by much smaller values (in comparison with the directions perpendicular to the optical axis) and have extrema at λ ~ 440, 560, 600, 620, and 640 nm.
{"title":"Optical Properties of Crystals of Lithium Niobate–Tantalate Solid Solutions LiNb $$_{{{text{1}}-x}}$$ TaxO3","authors":"E. V. Zabelina, A. A. Mololkin, N. S. Kozlova, V. M. Kasimova, R. R. Fakhrtdinov, V. E. Umylin, A. V. Sosunov","doi":"10.1134/s1063774523600874","DOIUrl":"https://doi.org/10.1134/s1063774523600874","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The growth system has been upgraded, technological growth parameters have been optimized, and a high-quality crystal has been grown from the LiNb<sub>0.95</sub>Ta<sub>0.05</sub>O<sub>3</sub> charge. Spectral dependences of the transmittance of a sample cut from this crystal have been measured before and after the transition to the single-domain state in the range of 300–700 nm with allowance for anisotropy and dichroism. Spectral dependences of the absorption coefficient α(λ) and degree of dichroism Δ(λ) have been obtained. The dependences α(λ) contain an absorption band at λ ~ 480 nm, regardless of the light propagation direction. When light propagates perpendicular to the optical axis, absorption bands at λ ~ 560, 608, 620, and 656 nm can additionally be observed. The transition to the single-domain state leads to sample bleaching. The dependences Δ(λ) for the <i>X</i> and <i>Y</i> cuts are characterized by identical extrema, whose positions correspond to the absorption bands in the dependences α(λ); additional extrema manifest themselves at λ ~ 400 and 445 nm. When light propagates along the optical axis, the dependences Δ(λ) are nonzero; they are characterized by much smaller values (in comparison with the directions perpendicular to the optical axis) and have extrema at λ ~ 440, 560, 600, 620, and 640 nm.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140882721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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