Pub Date : 2024-03-11DOI: 10.1134/S0020168523110110
A. D. Selyanina, D. A. Demina, L. N. Maskaeva, V. I. Voronin, I. O. Selyanin, V. F. Markov
Two-phase thin-film composites consisting of CdxPb1 –xS (0.007 ≤ x ≤ 0.068) substitutional solid solutions with a B1 cubic structure (sp. gr. (Fmbar {3}m)) and amorphous cadmium sulfide (CdS) have been produced by chemical deposition. The surface topography of the films has been studied by atomic force microscopy, and the results have been used to calculate surface microtopography parameters. A correlation has been found between the composition and functional properties of thin CdS–PbS films. The sensitivity of CdxPb1 –xS/CdS two-phase films to ammonia (NH3) in air has been assessed for the first time. The room-temperature detection limit for ammonia has been determined to be 10 ppm (6.22 mg/m3).
Abstract-Two phase thin-film composites consisting of CdxPb1 - xS (0.007 ≤ x ≤ 0.068) substitutional solid solutions with a B1 cubic structure (sp. gr.).(Fm/bar{3}m/))和无定形硫化镉(CdS)的取代固溶体。原子力显微镜对薄膜的表面形貌进行了研究,研究结果被用来计算表面微形貌参数。研究发现了 CdS-PbS 薄膜的成分与功能特性之间的相关性。首次评估了 CdxPb1 - xS/CdS 两相薄膜对空气中氨气 (NH3) 的灵敏度。氨的室温检测限被确定为 10 ppm(6.22 mg/m3)。
{"title":"Sensing Properties of CdxPb1 – xS/CdS Thin-Film Structures Produced by Chemical Deposition","authors":"A. D. Selyanina, D. A. Demina, L. N. Maskaeva, V. I. Voronin, I. O. Selyanin, V. F. Markov","doi":"10.1134/S0020168523110110","DOIUrl":"10.1134/S0020168523110110","url":null,"abstract":"<p>Two-phase thin-film composites consisting of Cd<sub><i>x</i></sub>Pb<sub>1 –</sub> <sub><i>x</i></sub>S (0.007 ≤ <i>x</i> ≤ 0.068) substitutional solid solutions with a <i>B</i>1 cubic structure (sp. gr. <span>(Fmbar {3}m)</span>) and amorphous cadmium sulfide (CdS) have been produced by chemical deposition. The surface topography of the films has been studied by atomic force microscopy, and the results have been used to calculate surface microtopography parameters. A correlation has been found between the composition and functional properties of thin CdS–PbS films. The sensitivity of Cd<sub><i>x</i></sub>Pb<sub>1 –</sub> <sub><i>x</i></sub>S/CdS two-phase films to ammonia (NH<sub>3</sub>) in air has been assessed for the first time. The room-temperature detection limit for ammonia has been determined to be 10 ppm (6.22 mg/m<sup>3</sup>).</p>","PeriodicalId":585,"journal":{"name":"Inorganic Materials","volume":"59 11","pages":"1172 - 1181"},"PeriodicalIF":0.9,"publicationDate":"2024-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140884397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-11DOI: 10.1134/S0020168523110092
R. A. Orbant, A. V. Utkin, D. A. Bannykh, M. A. Golosov, N. I. Baklanova
An approach is proposed which makes it possible to lower the silicon melt infiltration temperature in the fabrication of silicon carbide/zirconium diboride matrix ceramic composites via the formation of a silicon–yttrium low-temperature eutectic. Using thermodynamic calculations, we have substantiated the addition of yttrium to a siliciding agent and demonstrated its advantages. Silicon melt infiltration into composites has been carried out for the first time at a temperature below the melting point of silicon, which has ensured a decrease in the degree of carbon fiber degradation, while allowing the matrix to retain high density and uniformity.
{"title":"Effect of Yttrium on the Properties of Carbon Fiber-Reinforced ZrB2–SiC Composites","authors":"R. A. Orbant, A. V. Utkin, D. A. Bannykh, M. A. Golosov, N. I. Baklanova","doi":"10.1134/S0020168523110092","DOIUrl":"10.1134/S0020168523110092","url":null,"abstract":"<p>An approach is proposed which makes it possible to lower the silicon melt infiltration temperature in the fabrication of silicon carbide/zirconium diboride matrix ceramic composites via the formation of a silicon–yttrium low-temperature eutectic. Using thermodynamic calculations, we have substantiated the addition of yttrium to a siliciding agent and demonstrated its advantages. Silicon melt infiltration into composites has been carried out for the first time at a temperature below the melting point of silicon, which has ensured a decrease in the degree of carbon fiber degradation, while allowing the matrix to retain high density and uniformity.</p>","PeriodicalId":585,"journal":{"name":"Inorganic Materials","volume":"59 11","pages":"1212 - 1219"},"PeriodicalIF":0.9,"publicationDate":"2024-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140098061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-11DOI: 10.1134/S0020168523110031
V. I. Chukita, A. V. Voronov, M. V. Chukichev, V. S. Feshchenko
The output voltage, position sensitivity, and spectral sensitivity of a photodetecting element based on high-resistivity photosensitive CdSe layers have been shown for the first time to decrease hyperbolically with increasing layer thickness (in the range 6–60 μm) and increase linearly with increasing input electric current. The high position and spectral sensitivity found in this study (70.8 mV/(mm μA mW) and 375 mV/(μA mW), respectively), which considerably exceeds that of cadmium telluride layers, demonstrate that high-resistivity CdSe layers have considerable potential as a material of position-sensitive photodetectors.
{"title":"Optical Probing Position Sensitivity Characteristics of a Photodetecting Element Based on High-Resistivity CdSe Layers","authors":"V. I. Chukita, A. V. Voronov, M. V. Chukichev, V. S. Feshchenko","doi":"10.1134/S0020168523110031","DOIUrl":"10.1134/S0020168523110031","url":null,"abstract":"<p>The output voltage, position sensitivity, and spectral sensitivity of a photodetecting element based on high-resistivity photosensitive CdSe layers have been shown for the first time to decrease hyperbolically with increasing layer thickness (in the range 6–60 μm) and increase linearly with increasing input electric current. The high position and spectral sensitivity found in this study (70.8 mV/(mm μA mW) and 375 mV/(μA mW), respectively), which considerably exceeds that of cadmium telluride layers, demonstrate that high-resistivity CdSe layers have considerable potential as a material of position-sensitive photodetectors.</p>","PeriodicalId":585,"journal":{"name":"Inorganic Materials","volume":"59 11","pages":"1242 - 1249"},"PeriodicalIF":0.9,"publicationDate":"2024-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140098004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-11DOI: 10.1134/S0020168523110018
O. V. Akimova, A. V. Ovcharov, S. V. Gorbunov
Adhesion/decohesion processes on the surface of dense metallic diffusion membranes in direct contact with hydrogen have been studied by scanning electron microscopy and energy dispersive X-ray spectroscopy. The elemental composition of the alloys has been determined to be (wt %) Pd93Y7, Pd100 –хPbх (х = 5, 20), and Pd94Ru6. We have revealed Pb emission from the surface of the Pd100 –хPbх membranes and Pb adhesion to the surface of the Pd93Y7 membranes. No adhesion of yttrium particles to the surface of the palladium–lead membranes has been detected. The surface of Pd94Ru6 alloy has good stability to adhesion/decohesion processes.
{"title":"Adhesion/Decohesion Processes on the Surface of Palladium Membranes","authors":"O. V. Akimova, A. V. Ovcharov, S. V. Gorbunov","doi":"10.1134/S0020168523110018","DOIUrl":"10.1134/S0020168523110018","url":null,"abstract":"<p>Adhesion/decohesion processes on the surface of dense metallic diffusion membranes in direct contact with hydrogen have been studied by scanning electron microscopy and energy dispersive X-ray spectroscopy. The elemental composition of the alloys has been determined to be (wt %) Pd<sub>93</sub>Y<sub>7</sub>, Pd<sub>100 –</sub> <sub><i>х</i></sub>Pb<sub><i>х</i></sub> (<i>х</i> = 5, 20), and Pd<sub>94</sub>Ru<sub>6</sub>. We have revealed Pb emission from the surface of the Pd<sub>100 –</sub> <sub><i>х</i></sub>Pb<sub><i>х</i></sub> membranes and Pb adhesion to the surface of the Pd<sub>93</sub>Y<sub>7</sub> membranes. No adhesion of yttrium particles to the surface of the palladium–lead membranes has been detected. The surface of Pd<sub>94</sub>Ru<sub>6</sub> alloy has good stability to adhesion/decohesion processes.</p>","PeriodicalId":585,"journal":{"name":"Inorganic Materials","volume":"59 11","pages":"1283 - 1288"},"PeriodicalIF":0.9,"publicationDate":"2024-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140884519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-11DOI: 10.1134/S002016852311002X
N. A. Borshch, N. S. Pereslavtseva, S. I. Kurganskii
This paper presents results of density functional calculations of the atomic structure and electronic spectrum of ({text{TaSi}}_{n}^{ - }) (n = 12–17) clusters with the use of three distinct functionals. We analyze how the choice of the functional influences cluster structure optimization results and compare calculated electronic spectra of the most stable cluster isomers with measured photoelectron spectra, which makes it possible to assess the adequacy of the calculation method and identify the structure of the clusters.
{"title":"Atomic Structure and Growth Relationships of TaSi(_{n}^{ - }) (n = 12–17) Monoanionic Silicon–Tantalum Clusters","authors":"N. A. Borshch, N. S. Pereslavtseva, S. I. Kurganskii","doi":"10.1134/S002016852311002X","DOIUrl":"10.1134/S002016852311002X","url":null,"abstract":"<p>This paper presents results of density functional calculations of the atomic structure and electronic spectrum of <span>({text{TaSi}}_{n}^{ - })</span> (<i>n</i> = 12–17) clusters with the use of three distinct functionals. We analyze how the choice of the functional influences cluster structure optimization results and compare calculated electronic spectra of the most stable cluster isomers with measured photoelectron spectra, which makes it possible to assess the adequacy of the calculation method and identify the structure of the clusters.</p>","PeriodicalId":585,"journal":{"name":"Inorganic Materials","volume":"59 11","pages":"1194 - 1203"},"PeriodicalIF":0.9,"publicationDate":"2024-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140097999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-11DOI: 10.1134/S0020168523110043
M. A. Golosov, A. V. Utkin, V. V. Lozanov, A. T. Titov, N. I. Baklanova
Liquid-assisted processes that occur in iridium–silicon carbide diffusion couples have been studied in the temperature range 1500–1800°C at different heat treatment times. We have examined the microstructure and determined the elemental and phase compositions of the diffusion zone forming above eutectic temperatures and/or the melting points of individual reaction products: iridium silicides. The microstructure of the diffusion zone forming under liquid formation conditions has been shown to differ from that forming under the conditions of solid-state reaction between iridium and silicon carbide. At temperatures above 1700°C, the silicon content of the Ir–Si melt exceeds 50 mol %, which leads to crystallization of the Ir3Si4 and Ir3Si5 phases during cooling. The carbon resulting from reaction between iridium and SiC undergoes graphitization with increasing heat treatment temperature and time.
{"title":"Liquid-Assisted Interaction of Iridium with Silicon Carbide Ceramics","authors":"M. A. Golosov, A. V. Utkin, V. V. Lozanov, A. T. Titov, N. I. Baklanova","doi":"10.1134/S0020168523110043","DOIUrl":"10.1134/S0020168523110043","url":null,"abstract":"<p>Liquid-assisted processes that occur in iridium–silicon carbide diffusion couples have been studied in the temperature range 1500–1800°C at different heat treatment times. We have examined the microstructure and determined the elemental and phase compositions of the diffusion zone forming above eutectic temperatures and/or the melting points of individual reaction products: iridium silicides. The microstructure of the diffusion zone forming under liquid formation conditions has been shown to differ from that forming under the conditions of solid-state reaction between iridium and silicon carbide. At temperatures above 1700°C, the silicon content of the Ir–Si melt exceeds 50 mol %, which leads to crystallization of the Ir<sub>3</sub>Si<sub>4</sub> and Ir<sub>3</sub>Si<sub>5</sub> phases during cooling. The carbon resulting from reaction between iridium and SiC undergoes graphitization with increasing heat treatment temperature and time.</p>","PeriodicalId":585,"journal":{"name":"Inorganic Materials","volume":"59 11","pages":"1204 - 1211"},"PeriodicalIF":0.9,"publicationDate":"2024-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140098074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-11DOI: 10.1134/S0020168523110079
M. V. Kryzhanov, V. M. Orlov
Calcium vapor reduction of niobium oxide compounds has been studied at temperatures from 1023 to 1123 K. The adiabatic temperature of calcium reduction of niobium pentoxide (3020 K) and the Mg4Nb2O9 niobate (2525 K) has been determined by thermodynamic modeling with the TERRA software suite. We have assessed the effects of process temperature, reduction time, and precursor powder particle size on the degree of reduction, specific surface area, and pore structure of the niobium powders.
通过使用 TERRA 软件套件进行热力学建模,确定了五氧化二铌(3020 K)和 Mg4Nb2O9 铌酸盐(2525 K)的钙还原绝热温度。我们评估了工艺温度、还原时间和前驱体粉末粒度对铌粉还原度、比表面积和孔隙结构的影响。
{"title":"Calcium Vapor Reduction of Niobium Oxide Compounds","authors":"M. V. Kryzhanov, V. M. Orlov","doi":"10.1134/S0020168523110079","DOIUrl":"10.1134/S0020168523110079","url":null,"abstract":"<p>Calcium vapor reduction of niobium oxide compounds has been studied at temperatures from 1023 to 1123 K. The adiabatic temperature of calcium reduction of niobium pentoxide (3020 K) and the Mg<sub>4</sub>Nb<sub>2</sub>O<sub>9</sub> niobate (2525 K) has been determined by thermodynamic modeling with the TERRA software suite. We have assessed the effects of process temperature, reduction time, and precursor powder particle size on the degree of reduction, specific surface area, and pore structure of the niobium powders.</p>","PeriodicalId":585,"journal":{"name":"Inorganic Materials","volume":"59 11","pages":"1250 - 1260"},"PeriodicalIF":0.9,"publicationDate":"2024-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140097917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-11DOI: 10.1134/S0020168523110055
V. M. Ievlev, K. A. Solntsev, S. V. Gorbunov, N. R. Roshan, V. S. Kas’yanov, N. B. Morozova, A. I. Dontsov
The effect of ultrasonic treatment of the surface of membrane foil produced from a solid solution of the Pd–In–Ru system on hydrogen sorption by the foil and its hydrogen permeability has been studied using cyclic voltammetry, Auger electron spectroscopy, and atomic force microscopy. The results demonstrate that such treatment leads to an increase in hydrogen sorption by the surface layer of the foil, without changes in its hydrogen permeability. Ultrasonic treatment has been shown to influence neither the morphology, nor the composition, nor the structure of the foil.
{"title":"Effect of Ultrasonic Treatment of Pd–4 at % In–1 at % Ru Membrane Foil: Sorption and Hydrogen Permeability","authors":"V. M. Ievlev, K. A. Solntsev, S. V. Gorbunov, N. R. Roshan, V. S. Kas’yanov, N. B. Morozova, A. I. Dontsov","doi":"10.1134/S0020168523110055","DOIUrl":"10.1134/S0020168523110055","url":null,"abstract":"<p>The effect of ultrasonic treatment of the surface of membrane foil produced from a solid solution of the Pd–In–Ru system on hydrogen sorption by the foil and its hydrogen permeability has been studied using cyclic voltammetry, Auger electron spectroscopy, and atomic force microscopy. The results demonstrate that such treatment leads to an increase in hydrogen sorption by the surface layer of the foil, without changes in its hydrogen permeability. Ultrasonic treatment has been shown to influence neither the morphology, nor the composition, nor the structure of the foil.</p>","PeriodicalId":585,"journal":{"name":"Inorganic Materials","volume":"59 11","pages":"1275 - 1282"},"PeriodicalIF":0.9,"publicationDate":"2024-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140098618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-11DOI: 10.1134/S0020168523110109
A. N. Romanov, E. V. Haula, A. A. Kapustin, A. M. Kuli-zade, V. N. Korchak
We have studied broadband (1000–1600 nm) IR photoluminescence of polycrystalline corundum (α-Al2O3) samples containing copper impurity ions and additionally doped with ions of elements in the oxidation state 4+: Si4+, Ge4+, Ti4+, Zr4+, Hf 4+, and Sn4+. The results demonstrate that the IR photoluminescence intensity in corundum singly doped with copper is rather low. Additional doping of corundum with some tetravalent cations sharply increases the luminescence intensity. The largest increase in Cu2+ IR photoluminescence intensity is obtained in the case of additional doping with Ti4+, Ge4+, or Sn4+ cations. It seems likely that these ions ensure charge compensation when incorporated into the corundum lattice together with Cu2+ ions, so that the substitution process can be represented as 2Al3+ → Cu2+ + M4+ (M4+ = Ti4+, Ge4+, Sn4+,…). In this way, the additional doping of corundum with tetravalent ions raises Cu2+ solubility in α-Al2O3, leading to photoluminescence enhancement in the material.
{"title":"Effect of Codopant Ions on the IR Photoluminescence of Cu2+ Impurity Centers in Corundum (α-Al2O3)","authors":"A. N. Romanov, E. V. Haula, A. A. Kapustin, A. M. Kuli-zade, V. N. Korchak","doi":"10.1134/S0020168523110109","DOIUrl":"10.1134/S0020168523110109","url":null,"abstract":"<p>We have studied broadband (1000–1600 nm) IR photoluminescence of polycrystalline corundum (α-Al<sub>2</sub>O<sub>3</sub>) samples containing copper impurity ions and additionally doped with ions of elements in the oxidation state 4+: Si<sup>4+</sup>, Ge<sup>4+</sup>, Ti<sup>4+</sup>, Zr<sup>4+</sup>, Hf <sup>4+</sup>, and Sn<sup>4+</sup>. The results demonstrate that the IR photoluminescence intensity in corundum singly doped with copper is rather low. Additional doping of corundum with some tetravalent cations sharply increases the luminescence intensity. The largest increase in Cu<sup>2+</sup> IR photoluminescence intensity is obtained in the case of additional doping with Ti<sup>4+</sup>, Ge<sup>4+</sup>, or Sn<sup>4+</sup> cations. It seems likely that these ions ensure charge compensation when incorporated into the corundum lattice together with Cu<sup>2+</sup> ions, so that the substitution process can be represented as 2Al<sup>3+</sup> → Cu<sup>2+</sup> + M<sup>4+</sup> (M<sup>4+</sup> = Ti<sup>4+</sup>, Ge<sup>4+</sup>, Sn<sup>4+</sup>,…). In this way, the additional doping of corundum with tetravalent ions raises Cu<sup>2+</sup> solubility in α-Al<sub>2</sub>O<sub>3</sub>, leading to photoluminescence enhancement in the material.</p>","PeriodicalId":585,"journal":{"name":"Inorganic Materials","volume":"59 11","pages":"1261 - 1266"},"PeriodicalIF":0.9,"publicationDate":"2024-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140097912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-11DOI: 10.1134/S0020168523110080
S. V. Kuznetsov, V. A. Konyushkin, A. N. Nakladov, P. A. Popov, A. A. Pynenkov, K. N. Nishchev, A. A. Alexandrov
Single crystals of Ba1 –x–yYbxRyF2 +x+y (R = Tm, Ho) solid solutions have been grown by the Bridgman technique in vacuum using a CF4 fluorination atmosphere. We have measured their thermal conductivity in the range 50–300 K and their refractive index from the visible to IR spectral region. As the ytterbium content increases from 2 to 14 mol %, the room-temperature thermal conductivity of the solid solutions with R = Tm and Ho decreases from 3.39 to 1.18 and from 3.11 to 1.18 W/(m K), respectively. Raising the holmium and thulium content of the solid solutions leads to a gradual increase in their refractive index, and it gradually decreases with increasing wavelength.
摘要-通过布里奇曼技术,在真空中使用 CF4 氟化气氛生长出了 Ba1 - x - yYbxRyF2 + x + y (R = Tm, Ho) 固溶体的单晶。我们测量了它们在 50-300 K 范围内的热导率以及从可见光到红外光谱区域的折射率。随着镱含量从 2 摩尔%增加到 14 摩尔%,R = Tm 和 Ho 固溶体的室温热导率分别从 3.39 W/(m K) 和 3.11 W/(m K) 下降到 1.18 W/(m K)。提高固溶体中钬和铥的含量会导致其折射率逐渐增加,并随着波长的增加而逐渐减小。
{"title":"Thermophysical Characteristics of Single Crystals of Ba1 – x – yYbxRyF2 + x + y (R = Tm, Ho) Solid Solutions","authors":"S. V. Kuznetsov, V. A. Konyushkin, A. N. Nakladov, P. A. Popov, A. A. Pynenkov, K. N. Nishchev, A. A. Alexandrov","doi":"10.1134/S0020168523110080","DOIUrl":"10.1134/S0020168523110080","url":null,"abstract":"<p>Single crystals of Ba<sub>1 –</sub> <sub><i>x</i></sub> <sub>–</sub> <sub><i>y</i></sub>Yb<sub><i>x</i></sub>R<sub><i>y</i></sub>F<sub>2 +</sub> <sub><i>x</i></sub> <sub>+</sub> <sub><i>y</i></sub> (R = Tm, Ho) solid solutions have been grown by the Bridgman technique in vacuum using a CF<sub>4</sub> fluorination atmosphere. We have measured their thermal conductivity in the range 50–300 K and their refractive index from the visible to IR spectral region. As the ytterbium content increases from 2 to 14 mol %, the room-temperature thermal conductivity of the solid solutions with R = Tm and Ho decreases from 3.39 to 1.18 and from 3.11 to 1.18 W/(m K), respectively. Raising the holmium and thulium content of the solid solutions leads to a gradual increase in their refractive index, and it gradually decreases with increasing wavelength.</p>","PeriodicalId":585,"journal":{"name":"Inorganic Materials","volume":"59 11","pages":"1267 - 1274"},"PeriodicalIF":0.9,"publicationDate":"2024-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140098005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}