Pub Date : 2016-11-18DOI: 10.1109/PVSC.2016.7749826
A. Youssef, J. Schon, T. Niewelt, S. Mack, Sungeun Park, K. Nakajima, K. Morishita, R. Murai, M. Jensen, T. Buonassisi, M. Schubert
The swirl defect is observed in both n-type Czochralski (Cz) and non-contact crucible (NOC) Si wafers. It is postulated to be the outcome of oxygen precipitation during crystal growth and/or post-growth high temperature processes, specifically processes involving temperatures in the range of 800°C-1000°C. This defect is characterized by low lifetime ring-like regions that decrease the device performance. We employ a technique based on temperature- and injection-dependent photoluminescence imaging (TIDPLI) to characterize the swirl defect. We compare the calculated fingerprints of the defects responsible for the swirl pattern observed in both Cz and NOC-Si wafers to determine whether the swirls are caused by the same defect. We find significantly different defect fingerprints for the swirl defects in n-type Cz and NOC-Si. The Shockley-Read-Hall (SRH) description of the Cz-Si defects differ not much from the SRH description of intentionally grown oxygen precipitates, whereas the SRH parameters for the NOC-Si defects differ significantly. Identifying the limiting defect, allows us to suggest methods for its annihilation. We then successfully apply a rapid thermal annealing treatment to dissolve swirl defects in Cz-Si samples and homogenize the lifetime.
{"title":"Swirl defect investigation using temperature- and injection-dependent photoluminescence imaging","authors":"A. Youssef, J. Schon, T. Niewelt, S. Mack, Sungeun Park, K. Nakajima, K. Morishita, R. Murai, M. Jensen, T. Buonassisi, M. Schubert","doi":"10.1109/PVSC.2016.7749826","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749826","url":null,"abstract":"The swirl defect is observed in both n-type Czochralski (Cz) and non-contact crucible (NOC) Si wafers. It is postulated to be the outcome of oxygen precipitation during crystal growth and/or post-growth high temperature processes, specifically processes involving temperatures in the range of 800°C-1000°C. This defect is characterized by low lifetime ring-like regions that decrease the device performance. We employ a technique based on temperature- and injection-dependent photoluminescence imaging (TIDPLI) to characterize the swirl defect. We compare the calculated fingerprints of the defects responsible for the swirl pattern observed in both Cz and NOC-Si wafers to determine whether the swirls are caused by the same defect. We find significantly different defect fingerprints for the swirl defects in n-type Cz and NOC-Si. The Shockley-Read-Hall (SRH) description of the Cz-Si defects differ not much from the SRH description of intentionally grown oxygen precipitates, whereas the SRH parameters for the NOC-Si defects differ significantly. Identifying the limiting defect, allows us to suggest methods for its annihilation. We then successfully apply a rapid thermal annealing treatment to dissolve swirl defects in Cz-Si samples and homogenize the lifetime.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"9 1","pages":"1303-1307"},"PeriodicalIF":0.0,"publicationDate":"2016-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83664208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-11-18DOI: 10.1109/PVSC.2016.7749999
Yun-han Jheng, S. Hsu, Shou-Hung Wu, J. Sheu, Y. Lo, H. Kuo, Hsuan-An Chen, Shih-Yen Lin, C. Lin
A multiple-layered type-II quantum ring nanostructure was embedded in the regular GaAs single junction solar cell to extend its infrared response. Three different designs were implemented and the location of quantum ring layers was investigated. Under one Sun condition, the n-type quantum ring device showed higher Jsc than the GaAs reference while the reduction of Voc is minimum among all these quantum ring samples. Further tests through the filtered infrared light demonstrate the enhanced photo-currents from quantum ring devices. An increase as high as 292% in reverse-biased photocurrent can be observed.
{"title":"Multiple-layered type-II GaSb/GaAs quantum ring solar cells under concentrated solar illumination","authors":"Yun-han Jheng, S. Hsu, Shou-Hung Wu, J. Sheu, Y. Lo, H. Kuo, Hsuan-An Chen, Shih-Yen Lin, C. Lin","doi":"10.1109/PVSC.2016.7749999","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749999","url":null,"abstract":"A multiple-layered type-II quantum ring nanostructure was embedded in the regular GaAs single junction solar cell to extend its infrared response. Three different designs were implemented and the location of quantum ring layers was investigated. Under one Sun condition, the n-type quantum ring device showed higher Jsc than the GaAs reference while the reduction of Voc is minimum among all these quantum ring samples. Further tests through the filtered infrared light demonstrate the enhanced photo-currents from quantum ring devices. An increase as high as 292% in reverse-biased photocurrent can be observed.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"6 1","pages":"2091-2094"},"PeriodicalIF":0.0,"publicationDate":"2016-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84147412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-11-18DOI: 10.1109/PVSC.2016.7750358
T. Paulauskas, F. Sen, Cyrus Sun, E. Barnard, Moon J. Kim, Sivananthan Sivalingham, M. Chan, R. Klie
Poly-crystalline CdTe-based thin film photovoltaic (PV) devices are the forerunners in commercialized solar cell technology. Despite the commercial success, best laboratory cells achieve ~21.5% power conversion efficiency and hence are still ~10% short of theoretical limit. In this collaborative research project we investigate effects of the grain boundaries via wafer-bonded CdTe bicrystals. Lifetime measurements are carried out using two-photon absorption, while atomic resolution imaging and first-principles calculations are used to correlate the results. Here we present fundamental atomic-scale studies of several model grain boundaries.
{"title":"Atomic — Scale study of model CdTe grain boundaries","authors":"T. Paulauskas, F. Sen, Cyrus Sun, E. Barnard, Moon J. Kim, Sivananthan Sivalingham, M. Chan, R. Klie","doi":"10.1109/PVSC.2016.7750358","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750358","url":null,"abstract":"Poly-crystalline CdTe-based thin film photovoltaic (PV) devices are the forerunners in commercialized solar cell technology. Despite the commercial success, best laboratory cells achieve ~21.5% power conversion efficiency and hence are still ~10% short of theoretical limit. In this collaborative research project we investigate effects of the grain boundaries via wafer-bonded CdTe bicrystals. Lifetime measurements are carried out using two-photon absorption, while atomic resolution imaging and first-principles calculations are used to correlate the results. Here we present fundamental atomic-scale studies of several model grain boundaries.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"21 1","pages":"3664-3666"},"PeriodicalIF":0.0,"publicationDate":"2016-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79495079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-11-18DOI: 10.1109/PVSC.2016.7749937
Nao Kumekawa, Hayato Honma, S. Wakao
The Output of photovoltaic (PV) systems depends on weather conditions. Therefore if there is a large introduction of PV systems, the power quality in the distribution system will be affected. One effective solution for this problem is to predict PV output. Although the need for prediction information for short period fluctuation is increasing, it is difficult to directly predict a steep fluctuation on the second time scale. For the prediction information of PV output, we propose the estimation of the prediction interval of the fluctuation widths on a 10 second scale. In this paper, we carry out the prediction by using the conventional method, with one-dimensional kernel density estimation, and the proposed method, with two-dimensional kernel density estimation. Then, we discuss the effectiveness of the proposed method based on several numerical indexes.
{"title":"Prediction interval estimation of 10 second fluctuation of PV output with just-in-time modeling","authors":"Nao Kumekawa, Hayato Honma, S. Wakao","doi":"10.1109/PVSC.2016.7749937","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749937","url":null,"abstract":"The Output of photovoltaic (PV) systems depends on weather conditions. Therefore if there is a large introduction of PV systems, the power quality in the distribution system will be affected. One effective solution for this problem is to predict PV output. Although the need for prediction information for short period fluctuation is increasing, it is difficult to directly predict a steep fluctuation on the second time scale. For the prediction information of PV output, we propose the estimation of the prediction interval of the fluctuation widths on a 10 second scale. In this paper, we carry out the prediction by using the conventional method, with one-dimensional kernel density estimation, and the proposed method, with two-dimensional kernel density estimation. Then, we discuss the effectiveness of the proposed method based on several numerical indexes.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"42 1","pages":"1825-1830"},"PeriodicalIF":0.0,"publicationDate":"2016-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90923287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-11-18DOI: 10.1109/PVSC.2016.7750245
A. G. Imenes, J. Kanters
Three-dimensional (3D) solar maps based on Radiance simulations are presented for a future city district in southern Norway. The surface mapping method provides the commercial developer with a practical tool to evaluate the potential for building integrated photovoltaics (BIPV). The solar maps identify the optimum roof and facade areas available for solar energy utilization. The importance of BIPV and facade utilization in new city developments is discussed, along with key questions raised by the commercial developer regarding the practical implementation of BIPV solutions. Based on feedback from the building industry, a simplified model has been implemented to evaluate surface areas producing a profit or a loss over the PV system lifetime. As tilted photovoltaic (PV) modules installed on flat roofs are not building integrated, three simulation variants have been performed for flat roofs with a small inclination up to ten degrees. For some buildings this will give a small gain in annual PV production and payback time. The resulting 3D solar maps give the developer a possibility to review early-stage plans in terms of building shapes and positions in the landscape, in order to maximize utilization of the available solar resource. This enables cost- and energy-efficient development of nearly zero-energy buildings in future city districts.
{"title":"3D solar maps for the evaluation of building integrated photovoltaics in future city districts: A norwegian case study","authors":"A. G. Imenes, J. Kanters","doi":"10.1109/PVSC.2016.7750245","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750245","url":null,"abstract":"Three-dimensional (3D) solar maps based on Radiance simulations are presented for a future city district in southern Norway. The surface mapping method provides the commercial developer with a practical tool to evaluate the potential for building integrated photovoltaics (BIPV). The solar maps identify the optimum roof and facade areas available for solar energy utilization. The importance of BIPV and facade utilization in new city developments is discussed, along with key questions raised by the commercial developer regarding the practical implementation of BIPV solutions. Based on feedback from the building industry, a simplified model has been implemented to evaluate surface areas producing a profit or a loss over the PV system lifetime. As tilted photovoltaic (PV) modules installed on flat roofs are not building integrated, three simulation variants have been performed for flat roofs with a small inclination up to ten degrees. For some buildings this will give a small gain in annual PV production and payback time. The resulting 3D solar maps give the developer a possibility to review early-stage plans in terms of building shapes and positions in the landscape, in order to maximize utilization of the available solar resource. This enables cost- and energy-efficient development of nearly zero-energy buildings in future city districts.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"35 1","pages":"3141-3146"},"PeriodicalIF":0.0,"publicationDate":"2016-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78365700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-11-18DOI: 10.1109/PVSC.2016.7750356
B. V. D. van de Loo, B. Macco, J. Melskens, M. Verheijen, W. Kessels
A review of recent developments in the field of passivation of c-Si surfaces is presented, with a particular focus on materials that can be prepared by atomic layer deposition (ALD). Besides Al2O3, various other novel passivation schemes have recently been developed, such as Ga2O3, Ta2O5, SiO2/Al2O3, HfO2/Al2O3 and TiO2, which altogether can passivate a wider variety of doped and textured Si surfaces. Moreover, they are interesting candidates in the emerging field of passivating contacts, for instance as novel tunnel oxides. In this field, ALD can offer some distinct advantages, such as a precise control in film thickness, composition and even area-selective deposition.
{"title":"Atomic-layer deposited passivation schemes for c-Si solar cells","authors":"B. V. D. van de Loo, B. Macco, J. Melskens, M. Verheijen, W. Kessels","doi":"10.1109/PVSC.2016.7750356","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750356","url":null,"abstract":"A review of recent developments in the field of passivation of c-Si surfaces is presented, with a particular focus on materials that can be prepared by atomic layer deposition (ALD). Besides Al<sub>2</sub>O<sub>3</sub>, various other novel passivation schemes have recently been developed, such as Ga<sub>2</sub>O<sub>3</sub>, Ta<sub>2</sub>O<sub>5</sub>, SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub>, which altogether can passivate a wider variety of doped and textured Si surfaces. Moreover, they are interesting candidates in the emerging field of passivating contacts, for instance as novel tunnel oxides. In this field, ALD can offer some distinct advantages, such as a precise control in film thickness, composition and even area-selective deposition.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"14 1","pages":"3655-3660"},"PeriodicalIF":0.0,"publicationDate":"2016-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79010466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-11-18DOI: 10.1109/PVSC.2016.7750154
N. Ahsan, N. Miyashita, K. Yu, W. Walukiewicz, Y. Okada
The location of multiple bands in a dilute nitride GaNAs intermediate band solar cell (IBSC) can be tuned by the level of N amount in the GaAs host. It is observed that the open circuit voltage improves with increasing level of the N amount in our MBE grown IBSCs in which GaNAs layers are sandwiched between AlGaAs layers. This is ascribed to the improved blockage of the carrier leakage of the IB electrons over the AlGaAs backside IB barrier due to increased separation between the IB and conduction bands.
{"title":"Designing III-V dilute nitride alloys for IBSC application","authors":"N. Ahsan, N. Miyashita, K. Yu, W. Walukiewicz, Y. Okada","doi":"10.1109/PVSC.2016.7750154","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750154","url":null,"abstract":"The location of multiple bands in a dilute nitride GaNAs intermediate band solar cell (IBSC) can be tuned by the level of N amount in the GaAs host. It is observed that the open circuit voltage improves with increasing level of the N amount in our MBE grown IBSCs in which GaNAs layers are sandwiched between AlGaAs layers. This is ascribed to the improved blockage of the carrier leakage of the IB electrons over the AlGaAs backside IB barrier due to increased separation between the IB and conduction bands.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"161 1","pages":"2761-2764"},"PeriodicalIF":0.0,"publicationDate":"2016-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84994328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-11-18DOI: 10.1109/PVSC.2016.7749928
Takuma Arai, S. Wakao
In the case of a mass introduction of PV the instability of PV system output leads to a deterioration of power quality in the distribution system. In this research, we focus on the storage battery operation to achieve a balance between power supply and demand, and perform multi-objective optimization. Specifically, we determine the optimal relationship between the storage battery's charging and discharging rates and the required time resolution for ideal optimization results.
{"title":"Computational analysis of battery operation in photovoltaic systems with varying charging and discharging rates","authors":"Takuma Arai, S. Wakao","doi":"10.1109/PVSC.2016.7749928","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749928","url":null,"abstract":"In the case of a mass introduction of PV the instability of PV system output leads to a deterioration of power quality in the distribution system. In this research, we focus on the storage battery operation to achieve a balance between power supply and demand, and perform multi-objective optimization. Specifically, we determine the optimal relationship between the storage battery's charging and discharging rates and the required time resolution for ideal optimization results.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"152 1","pages":"1773-1779"},"PeriodicalIF":0.0,"publicationDate":"2016-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86229364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-11-18DOI: 10.1109/PVSC.2016.7750088
B. Macco, B. V. D. van de Loo, J. Melskens, S. Smit, W. Kessels
In the field of photovoltaics, atomic layer deposition (ALD) is mostly known for its success in preparing Al2O3-based surface passivation layers for c-Si homojunction cells. In the last years, many novel types of c-Si heterojunctions have appeared, referred to as passivating contacts. In these concepts, metal oxide thin films are used for surface passivation, carrier selectivity and as transparent conductive oxide. This leads to the question whether the success of ALD for homojunctions can be translated into this new field as well. Therefore, this work provides an overview of these new concepts, and highlights both the current role and prospects of ALD in this field.
{"title":"Status and prospects for atomic layer deposited metal oxide thin films in passivating contacts for c-Si photovoltaics","authors":"B. Macco, B. V. D. van de Loo, J. Melskens, S. Smit, W. Kessels","doi":"10.1109/PVSC.2016.7750088","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750088","url":null,"abstract":"In the field of photovoltaics, atomic layer deposition (ALD) is mostly known for its success in preparing Al2O3-based surface passivation layers for c-Si homojunction cells. In the last years, many novel types of c-Si heterojunctions have appeared, referred to as passivating contacts. In these concepts, metal oxide thin films are used for surface passivation, carrier selectivity and as transparent conductive oxide. This leads to the question whether the success of ALD for homojunctions can be translated into this new field as well. Therefore, this work provides an overview of these new concepts, and highlights both the current role and prospects of ALD in this field.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"20 1","pages":"2473-2478"},"PeriodicalIF":0.0,"publicationDate":"2016-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74523258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-11-18DOI: 10.1109/PVSC.2016.7749983
G.B.M.A. Litjens, W. V. van Sark, E. Worrell
New policies supporting photovoltaics (PV) self-consumption and reduced feed-in power flows are advocated in many countries. Consequently, knowledge about the influences of demand patterns and battery energy storage on PV self-consumption and grid impact is required. This study analysed these influences for 400 residential and 26 commercial systems from the Netherlands. Results show larger self-consumption rates for commercial systems than residential systems. Batteries increase the self-consumption rate depending on the PV size and the battery size. Averaged curtailment losses are larger for residential systems than commercial systems and decrease with the addition of a battery to the system.
{"title":"On the influence of electricity demand patterns, battery storage and PV system design on PV self-consumption and grid interaction","authors":"G.B.M.A. Litjens, W. V. van Sark, E. Worrell","doi":"10.1109/PVSC.2016.7749983","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749983","url":null,"abstract":"New policies supporting photovoltaics (PV) self-consumption and reduced feed-in power flows are advocated in many countries. Consequently, knowledge about the influences of demand patterns and battery energy storage on PV self-consumption and grid impact is required. This study analysed these influences for 400 residential and 26 commercial systems from the Netherlands. Results show larger self-consumption rates for commercial systems than residential systems. Batteries increase the self-consumption rate depending on the PV size and the battery size. Averaged curtailment losses are larger for residential systems than commercial systems and decrease with the addition of a battery to the system.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"72 1","pages":"2021-2024"},"PeriodicalIF":0.0,"publicationDate":"2016-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85741366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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